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1. 发明申请

WO2015180966A2 METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
标题翻译：通过嵌段共聚物自组装提供基板上的刻蚀特征的方法
公开(公告)号：WO2015180966A2
公开(公告)日：2015-12-03
申请号：PCT/EP2015/060620
申请日：2015-05-13
申请人： ASML NETHERLANDS B.V.
发明人： WUISTER, Sander, Frederik , JEUNINK, Andre, Bernardus , PEETERS, Emiel
IPC分类号： G03F7/00
CPC分类号： H01L21/76816 , B81C1/00031 , B81C1/00396 , B81C2201/0149 , C09K13/00 , C30B1/04 , C30B29/58 , G03F7/0002 , G03F7/0041 , G03F7/2004 , G03F7/3021 , G03F7/70375 , H01L21/0271 , H01L21/3083 , H01L21/76829
摘要： A method of forming at least one lithography feature, the method comprising: providing at least one lithography recess on a substrate, the or each lithography recess comprising side-walls and a base, with the side-walls having a width therebetween; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer comprising at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features comprised of the second domain within the or each lithography recess.
摘要翻译：一种形成至少一个光刻特征的方法，所述方法包括：在基底上提供至少一个光刻凹槽，所述或每个光刻凹槽包括侧壁和底座，其中所述侧壁之间具有宽度; 提供在所述或每个光刻凹槽中具有第一和第二块的自组装嵌段共聚物; 使得所述可自组装嵌段共聚物自组装成所述或每个光刻凹槽内的有序层，所述有序层包含至少第一区域的第一区域和第二区域的第二区域; 导致自组装嵌段共聚物以定向方式交联; 并且选择性地移除第一区域以形成由该光刻凹槽或每个光刻凹槽内的第二区域组成的光刻特征。

2. 发明申请

WO2013127608A2 METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于器件平版印刷的自组装嵌段共聚物的图案化化学外延模板的方法
公开(公告)号：WO2013127608A2
公开(公告)日：2013-09-06
申请号：PCT/EP2013/052306
申请日：2013-02-06
申请人： ASML NETHERLANDS B.V.
发明人： PEETERS, Emiel , KETELAARS, Wilhelmus , WUISTER, Sander , KOOLE, Roelof , VAN HEESCH, Chris , BRIZARD, Aurelie , BOOTS, Henri , NGUYEN, Thanh , YILDIRIM, Oktay
IPC分类号： G06F7/02
CPC分类号： G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/2002
摘要： A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition comprising a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.
摘要翻译：一种形成图案化学外延模板的方法，用于在基底表面上定向包含第一聚合物嵌段和第二聚合物嵌段的可自组装的嵌段共聚物，所述方法包括施加底漆组合物施加到表面，所述底漆组合物包含与第一聚合物嵌段具有化学亲和力的第一聚合物部分和与第二聚合物嵌段具有化学亲和力的第二聚合物部分，选择性地暴露表面，底漆层和任何上覆层光化辐射以提供曝光区域和未曝光区域，使曝光区域中的第一聚合物部分变得不稳定，并且从曝光区域除去不稳定的第一聚合物部分以消耗第一聚合物部分的曝光区域中的底漆层表面以形成图案化的化学外延模板。

3. 发明申请

WO2012031818A3 LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS 审中-公开
公开(公告)号：WO2012031818A3
公开(公告)日：2012-03-15
申请号：PCT/EP2011/062554
申请日：2011-07-21
申请人： ASML NETHERLANDS B.V. , KOOLE, Roelof , DIJKSMAN, Johan , WUISTER, Sander , PEETERS, Emiel
发明人： KOOLE, Roelof , DIJKSMAN, Johan , WUISTER, Sander , PEETERS, Emiel
IPC分类号： B81C1/00 , H01L21/027
摘要： A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

4. 发明申请

WO2011151109A1 SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY 审中-公开
标题翻译：自组装聚合物和方法用于光刻
公开(公告)号：WO2011151109A1
公开(公告)日：2011-12-08
申请号：PCT/EP2011/056308
申请日：2011-04-20
申请人： ASML Netherlands B.V. , PEETERS, Emiel , WUISTER, Sander , KOOLE, Roelof
发明人： PEETERS, Emiel , WUISTER, Sander , KOOLE, Roelof
IPC分类号： C08F293/00 , G03F7/00 , B81C1/00 , B82Y10/00 , B82Y30/00
CPC分类号： C08F293/00 , B05D5/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F297/04 , G03F7/0002 , G03F7/004 , G03F7/165 , G03F7/26
摘要： A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration. The second molecular configuration provides better ordering kinetics and permits annealing of defects near its order/disorder transition temperature, while the first molecular configuration, with a higher order/disorder transition temperature, provides low line edge/width roughness for the pattern formed on setting.
摘要翻译：公开了具有第一和第二分子构型的自组装聚合物，其具有第一分子构型，其具有比第二分子构型更高的可自组装聚合物的Flory Huggins参数，并且可自组装聚合物可从第一分子构型到第二分子构型，从第二分子构型到第一分子构型，或两者都通过施加刺激。聚合物可用于通过在其第二分子构型中排列和退火聚合物并在聚合物处于第一分子构型时设置聚合物，从而在基底上提供聚合物的有序周期性图案化层的方法。第二种分子结构提供更好的排序动力学，并允许在其顺序/无序转变温度附近的缺陷退火，而具有较高阶/无序转变温度的第一分子构型为设置上形成的图案提供了低的线边缘/宽度粗糙度。

5. 发明申请

WO2013050338A1 METHOD TO PROVIDE A PATTERNED ORIENTATION TEMPLATE FOR A SELF-ASSEMBLABLE POLYMER 审中-公开
标题翻译：为自组装聚合物提供图案方向模板的方法
公开(公告)号：WO2013050338A1
公开(公告)日：2013-04-11
申请号：PCT/EP2012/069400
申请日：2012-10-02
申请人： ASML NETHERLANDS B.V.
发明人： NGUYEN, Thanh , FINDERS, Jozef , KETELAARS, Wilhelmus , WUISTER, Sander , VAN DER HEIJDEN, Eddy , MEESSEN, Hieronymus , KOOLE, Roelof , PEETERS, Emiel , VAN HEESCH, Chris , BRIZARD, Aurelie , BOOTS, Henri , DRUZHININA, Tamara , DE RUITER, Jessica
IPC分类号： B81C1/00
CPC分类号： C30B1/12 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , G03F7/0002 , H01L21/0337 , Y10T117/10
摘要： A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.
摘要翻译：用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴线延伸的不连续第一区域的平行行的二维阵列，并且沿着正交的第二轴相互间隔开并由连续的第二轴域。所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

6. 发明申请

WO2012175343A1 SELF-ASSEMBLABLE POLYMER AND METHODS FOR USE IN LITHOGRAPHY 审中-公开
标题翻译：自组装聚合物及其在LITHOGRAPHY中的使用方法
公开(公告)号：WO2012175343A1
公开(公告)日：2012-12-27
申请号：PCT/EP2012/060784
申请日：2012-06-07
申请人： ASML NETHERLANDS B.V. , BRIZARD, Aurelie , WUISTER, Sander , KOOLE, Roelof , PEETERS, Emiel
发明人： BRIZARD, Aurelie , WUISTER, Sander , KOOLE, Roelof , PEETERS, Emiel
IPC分类号： G03F7/00 , C08G83/00
CPC分类号： G03F7/004 , B82Y10/00 , B82Y40/00 , C30B19/00 , G03F7/0002
摘要： A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.
摘要翻译：适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。

7. 发明申请

WO2012084558A1 METHODS FOR PROVIDING PATTERNED ORIENTATION TEMPLATES FOR SELF-ASSEMBLABLE POLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于自组装聚合物的图案方向模板的方法用于器件平台的使用
公开(公告)号：WO2012084558A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072379
申请日：2011-12-09
申请人： ASML NETHERLANDS B.V. , PEETERS, Emiel , KETELAARS, Wilhelmus , DIJKSMAN, Johan , WUISTER, Sander , KOOLE, Roelof , VAN HEESCH, Chris
发明人： PEETERS, Emiel , KETELAARS, Wilhelmus , DIJKSMAN, Johan , WUISTER, Sander , KOOLE, Roelof , VAN HEESCH, Chris
IPC分类号： G03F7/00
CPC分类号： C30B19/12 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.
摘要翻译：公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排，界面垂直于衬底表面。所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。

8. 发明申请

WO2014023589A1 METHODS FOR PROVIDING LITHOGRAPHY FEATURES ON A SUBSTRATE BY SELF-ASSEMBLY OF BLOCK COPOLYMERS 审中-公开
标题翻译：通过嵌段共聚物自组装提供基板上的刻蚀特征的方法
公开(公告)号：WO2014023589A1
公开(公告)日：2014-02-13
申请号：PCT/EP2013/065824
申请日：2013-07-26
申请人： ASML NETHERLANDS B.V.
发明人： FINDERS, Jozef , DRUZHININA, Tamara , PEETERS, Emiel , WUISTER, Sander , VAN HEESCH, Chris , VAN DER HEIJDEN, Eddy , BOOTS, Henri
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G06F17/5009 , G06F17/5068
摘要： A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.
摘要翻译：设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计量，例如放置误差，相对于通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。

9. 发明申请

WO2013152928A1 METHODS OF PROVIDING PATTERNED EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于自组装块式共聚物的图案外延模板的方法用于器件平台
公开(公告)号：WO2013152928A1
公开(公告)日：2013-10-17
申请号：PCT/EP2013/055681
申请日：2013-03-19
申请人： ASML NETHERLANDS B.V.
发明人： WUISTER, Sander , BANINE, Vadim , FINDERS, Jozef , KOOLE, Roelof , PEETERS, Emiel , SINGH, Harmeet
IPC分类号： G03F7/00
CPC分类号： G03F7/26 , B05D1/32 , B05D3/107 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/20 , G03F7/2022
摘要： A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.
摘要翻译：公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

10. 发明申请

WO2013143813A1 METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
标题翻译：提供用于自组装块式共聚物的图案模式的方法用于器件平台的使用
公开(公告)号：WO2013143813A1
公开(公告)日：2013-10-03
申请号：PCT/EP2013/054502
申请日：2013-03-06
申请人： ASML NETHERLANDS B.V.
发明人： SINGH, Harmeet , BANINE, Vadim , FINDERS, Jozef , WUISTER, Sander , KOOLE, Roelof , PEETERS, Emiel
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/162 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/165 , G03F7/2022 , G03F7/2024 , G03F7/30 , G03F7/40 , H01L21/027
摘要： A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.
摘要翻译：公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分抗蚀剂和基材。在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

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