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1. 发明申请

WO2013040127A3 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：WO2013040127A3
公开(公告)日：2013-05-02
申请号：PCT/US2012055009
申请日：2012-09-13
申请人： APPLIED MATERIALS INC , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
发明人： WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

2. 发明申请

WO2012177293A3 TRANSMISSION LINE RF APPLICATOR FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的传输线RF应用器
公开(公告)号：WO2012177293A3
公开(公告)日：2013-03-14
申请号：PCT/US2012000298
申请日：2012-06-21
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , TANAKA TSUTOMU , SORENSEN CARL A , ANWAR SUHAIL , WHITE JOHN M , SHINDE RANJIT INDRAJIT , CHO SEON-MEE , TRUONG DOUGLAS D
发明人： KUDELA JOZEF , TANAKA TSUTOMU , SORENSEN CARL A , ANWAR SUHAIL , WHITE JOHN M , SHINDE RANJIT INDRAJIT , CHO SEON-MEE , TRUONG DOUGLAS D
IPC分类号： H05H1/46 , H01L21/3065 , H01P3/10
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/3222 , H05H2001/463
摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译：用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。该装置包括内部导体和一个或两个外部导体。一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。

3. 发明申请

WO2010083271A3 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：天然气引进开口的基板支持
公开(公告)号：WO2010083271A3
公开(公告)日：2010-10-21
申请号：PCT/US2010020979
申请日：2010-01-14
申请人： APPLIED MATERIALS INC , KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
发明人： KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例总体上涉及用于将衬底基本上齐平地抵靠在处理室中的衬底支撑件上的设备和方法。当大面积衬底放置在衬底支撑件上时，由于可能存在于衬底和衬底支撑件之间的气穴，衬底可能不完全与衬底支撑件齐平。气穴会导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉出气体可以将衬底基本上与支撑件齐平。在沉积过程中，静电荷可能累积并导致基材粘附在基材支撑件上。通过在衬底和衬底支撑件之间引入气体，静电力可以被克服，使得衬底可以与较少的或不需要等离子体支撑的承受器分开，这需要额外的时间和气体。

4. 发明申请

WO2010042860A3 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体处理室的RF返回路径
公开(公告)号：WO2010042860A3
公开(公告)日：2010-07-15
申请号：PCT/US2009060230
申请日：2009-10-09
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架，衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

5. 发明申请

WO2010091205A3 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A3
公开(公告)日：2010-11-25
申请号：PCT/US2010023236
申请日：2010-02-04
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
发明人： CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF装置之一或两者的位移电极实现接地返回路径，耦合到腔室的底部的RF装置和电极或其组合。

6. 发明申请

WO2009082763A2 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：WO2009082763A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088351
申请日：2008-12-24
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
发明人： KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').
摘要翻译：系统，方法和装置包括用于在衬底（232）上沉积膜（231）的等离子体处理室（200,200'，200“）。等离子体处理室（200）包括具有接地板（225），背板（240）和存在于接地板（225）和背板（2）之间的不均匀性（201）的盖组件 240）。不均匀性（201）可能会干扰RF波均匀性，并导致接地板（225）和背板（240）的部分之间的阻抗不平衡。不均匀性（201）可以包括不均匀表面的结构（300）或减小的间隔（400）。可以存在不均匀表面的减小的间隔（400），其中在第一端（402）处的接地板（225）和背板（240）之间的第一距离（d1，d2）不同于第二距离 d3）在第二端（404）处于接地板（225）和背板（240）之间。结构（300）可以为2cm至10cm厚，覆盖背板（240）的20％至50％，并且位于远离存在于室（200'）内部的不连续（207）的位置。

7. 发明申请

WO2010094002A3 RF BUS AND RF RETURN BUS FOR PLASMA CHAMBER ELECTRODE 审中-公开
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：WO2010094002A3
公开(公告)日：2010-12-09
申请号：PCT/US2010024206
申请日：2010-02-13
申请人： APPLIED MATERIALS INC , SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
发明人： SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
IPC分类号： H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input (40) of a plasma chamber to the interior (11) of a plasma chamber, an RF bus conductor (43, 44) is connected between the RF input and a plasma chamber electrode (20-26). In one embodiment, an RF return bus conductor (53, 54) is connected to an electrically grounded wall (14-18) of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入（40）的RF功率耦合到等离子体室的内部（11），RF总线导体（43,44）连接在RF输入和等离子体室电极（20-26）之间）。在一个实施例中，RF返回总线导体（53,54）连接到腔室的电接地壁（14-18），并且RF总线导体和RF返回总线导体具有相应的表面，所述表面平行且面对每个其他。在另一个实施例中，RF总线导体具有垂直于等离子体腔室电极的最靠近RF总线导体的表面定向的最长尺寸的横截面。

8. 发明申请

WO2008106499A3 RIGID RF TRANSMISSION LINE WITH EASY REMOVAL SECTION 审中-公开
标题翻译：刚性RF传输线，易于拆卸
公开(公告)号：WO2008106499A3
公开(公告)日：2008-10-30
申请号：PCT/US2008055100
申请日：2008-02-27
申请人： APPLIED MATERIALS INC , SORENSEN CARL A , WHITE JOHN M , NEILL KIM C
发明人： SORENSEN CARL A , WHITE JOHN M , NEILL KIM C
IPC分类号： H01P1/06
CPC分类号： H01P1/045 , H01J37/32082 , H01J37/32174
摘要： An RF feed for a processing apparatus is disclosed. Coupling an RF generator to an RF matching network by a rigid RF feed lessens the amount of power that is lost during transmission from the generator to the matching network. The rigid RF feed comprises an inverted J shaped section that decouples the generator from the matching network whenever servicing the chamber is necessary. The J shape section has two parallel portions coupled together by a perpendicular portion. The J shaped section may be removed as a one piece assembly by uncoupling the J shaped section at a location disposed near the top of the chamber and a location near the floor of the chamber. The connections between the J shaped section and the remainder of the RF feed face the same direction to ensure easy coupling and decoupling without twisting and/or bending any portion of the rigid RF feed.
摘要翻译：公开了一种用于处理设备的RF馈送。通过刚性射频馈送将射频发生器耦合到射频匹配网络会减少从发生器到匹配网络传输过程中损失的功率量。刚性射频馈电包括一个倒J形部分，无论何时需要维修腔室，都可将发生器与匹配网络分离。 J形部分具有通过垂直部分连接在一起的两个平行部分。 J形部分可通过在设置在腔室顶部附近的位置处的J形部分与腔室底部附近的位置处解开联接而被拆除为单件式组件。 J形部分和RF馈送的其余部分之间的连接面向相同的方向，以确保容易的耦合和解耦，而不会扭曲和/或弯曲刚性RF馈送的任何部分。

9. 发明申请

WO2008106499B1 RIGID RF TRANSMISSION LINE WITH EASY REMOVAL SECTION 审中-公开
标题翻译： RIGID射频发射线，轻松移除部分
公开(公告)号：WO2008106499B1
公开(公告)日：2008-12-11
申请号：PCT/US2008055100
申请日：2008-02-27
申请人： APPLIED MATERIALS INC , SORENSEN CARL A , WHITE JOHN M , NEILL KIM C
发明人： SORENSEN CARL A , WHITE JOHN M , NEILL KIM C
IPC分类号： H01P1/06
CPC分类号： H01P1/045 , H01J37/32082 , H01J37/32174
摘要： An RF feed for a processing apparatus is disclosed. Coupling an RF generator to an RF matching network by a rigid RF feed lessens the amount of power that is lost during transmission from the generator to the matching network. The rigid RF feed comprises an inverted J shaped section that decouples the generator from the matching network whenever servicing the chamber is necessary. The J shape section has two parallel portions coupled together by a perpendicular portion. The J shaped section may be removed as a one piece assembly by uncoupling the J shaped section at a location disposed near the top of the chamber and a location near the floor of the chamber. The connections between the J shaped section and the remainder of the RF feed face the same direction to ensure easy coupling and decoupling without twisting and/or bending any portion of the rigid RF feed.
摘要翻译：公开了一种用于处理装置的RF馈送。通过刚性RF馈送将RF发生器耦合到RF匹配网络可以减少在从发生器到匹配网络的传输过程中丢失的功率量。刚性射频馈送包括倒置的J形截面，每当需要维护腔室时，将发生器与匹配网络分离。 J形截面具有通过垂直部分联接在一起的两个平行部分。 J形截面可以作为一个单独的组件被移除，该J形截面在设置在室顶部附近的位置处以及靠近该室底部的位置脱离J形截面。 J形截面和RF进料的其余部分之间的连接面向相同的方向，以确保容易的耦合和解耦，而不会扭曲和/或弯曲刚性RF进给的任何部分。

10. 发明申请

WO2009082753A2 ASYMMETRICAL RF DRIVE FOR ELECTRODE OF PLASMA CHAMBER 审中-公开
标题翻译：等离子体电极用不对称RF驱动器
公开(公告)号：WO2009082753A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088265
申请日：2008-12-24
申请人： APPLIED MATERIALS INC
发明人： KUDELA JOZEF , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H05H1/34 , H01L21/30
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55- 56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time- averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来对每个驱动点位置进行加权。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

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