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1. 发明申请

WO2010083271A3 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：天然气引进开口的基板支持
公开(公告)号：WO2010083271A3
公开(公告)日：2010-10-21
申请号：PCT/US2010020979
申请日：2010-01-14
申请人： APPLIED MATERIALS INC , KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
发明人： KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例总体上涉及用于将衬底基本上齐平地抵靠在处理室中的衬底支撑件上的设备和方法。当大面积衬底放置在衬底支撑件上时，由于可能存在于衬底和衬底支撑件之间的气穴，衬底可能不完全与衬底支撑件齐平。气穴会导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉出气体可以将衬底基本上与支撑件齐平。在沉积过程中，静电荷可能累积并导致基材粘附在基材支撑件上。通过在衬底和衬底支撑件之间引入气体，静电力可以被克服，使得衬底可以与较少的或不需要等离子体支撑的承受器分开，这需要额外的时间和气体。

2. 发明申请

WO2010042860A2 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：WO2010042860A2
公开(公告)日：2010-04-15
申请号：PCT/US2009/060230
申请日：2009-10-09
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
发明人： WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

3. 发明申请

WO2010094002A3 RF BUS AND RF RETURN BUS FOR PLASMA CHAMBER ELECTRODE 审中-公开
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：WO2010094002A3
公开(公告)日：2010-12-09
申请号：PCT/US2010024206
申请日：2010-02-13
申请人： APPLIED MATERIALS INC , SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
发明人： SORENSEN CARL A , KUDELA JOZEF , TINER ROBIN L , ANWAR SUHAIL
IPC分类号： H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input (40) of a plasma chamber to the interior (11) of a plasma chamber, an RF bus conductor (43, 44) is connected between the RF input and a plasma chamber electrode (20-26). In one embodiment, an RF return bus conductor (53, 54) is connected to an electrically grounded wall (14-18) of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入（40）的RF功率耦合到等离子体室的内部（11），RF总线导体（43,44）连接在RF输入和等离子体室电极（20-26）之间）。在一个实施例中，RF返回总线导体（53,54）连接到腔室的电接地壁（14-18），并且RF总线导体和RF返回总线导体具有相应的表面，所述表面平行且面对每个其他。在另一个实施例中，RF总线导体具有垂直于等离子体腔室电极的最靠近RF总线导体的表面定向的最长尺寸的横截面。

4. 发明申请

WO2010083271A2 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：WO2010083271A2
公开(公告)日：2010-07-22
申请号：PCT/US2010/020979
申请日：2010-01-14
申请人： APPLIED MATERIALS, INC. , KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
发明人： KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
IPC分类号： H01L21/683 , H01L21/687 , H01L21/203 , H01L21/205
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当大面积基板被放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全地与基板支撑件齐平。气囊可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并导致基板粘附到基板支撑件。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

5. 发明申请

WO2008106499A2 RIGID RF TRANSMISSION LINE WITH EASY REMOVAL SECTION 审中-公开
标题翻译：刚性RF传输线，易于拆卸
公开(公告)号：WO2008106499A2
公开(公告)日：2008-09-04
申请号：PCT/US2008/055100
申请日：2008-02-27
申请人： APPLIED MATERIALS, INC. , SORENSEN, Carl, A. , WHITE, John, M. , NEILL, Kim, C.
发明人： SORENSEN, Carl, A. , WHITE, John, M. , NEILL, Kim, C.
IPC分类号： H01J37/02
CPC分类号： H01P1/045 , H01J37/32082 , H01J37/32174
摘要： An RF feed for a processing apparatus is disclosed. Coupling an RF generator to an RF matching network by a rigid RF feed lessens the amount of power that is lost during transmission from the generator to the matching network. The rigid RF feed comprises an inverted J shaped section that decouples the generator from the matching network whenever servicing the chamber is necessary. The J shape section has two parallel portions coupled together by a perpendicular portion. The J shaped section may be removed as a one piece assembly by uncoupling the J shaped section at a location disposed near the top of the chamber and a location near the floor of the chamber. The connections between the J shaped section and the remainder of the RF feed face the same direction to ensure easy coupling and decoupling without twisting and/or bending any portion of the rigid RF feed.
摘要翻译：公开了一种用于处理设备的RF馈送。通过刚性射频馈送将射频发生器耦合到射频匹配网络会减少从发生器到匹配网络传输过程中损失的功率量。刚性射频馈电包括一个倒J形部分，无论何时需要维修腔室，都可将发生器与匹配网络分离。 J形部分具有通过垂直部分连接在一起的两个平行部分。 J形部分可通过在设置在腔室顶部附近的位置处的J形部分与腔室底部附近的位置处解开联接而被拆除为单件式组件。 J形部分和RF馈电的其余部分之间的连接面向相同的方向，以确保容易的耦合和去耦，而不会扭曲和/或弯曲刚性RF馈电的任何部分。

6. 发明申请

WO2013122954A1 LINEAR PECVD APPARATUS 审中-公开
标题翻译：线性PECVD设备
公开(公告)号：WO2013122954A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/025771
申请日：2013-02-12
申请人： APPLIED MATERIALS, INC. , KUDELA, Jozef , ANWAR, Suhail , SORENSEN, Carl, A. , TRUONG, Douglas , WHITE, John, M.
发明人： KUDELA, Jozef , ANWAR, Suhail , SORENSEN, Carl, A. , TRUONG, Douglas , WHITE, John, M.
IPC分类号： C23C16/50 , C23C16/455
CPC分类号： C23C16/511 , C23C16/54
摘要： The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.
摘要翻译：本发明一般涉及线性PECVD装置。该设备被设计成同时处理两个基板，使得基板共享等离子体源以及气体源。该装置具有集中设置在该装置的室主体内的多个微波源。基板设置在微波源的相对侧上，气源设置在微波源和基板之间。共享的微波源和气源允许同时处理多个基板，并降低每个基板的加工成本。

7. 发明申请

WO2013040127A3 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：WO2013040127A3
公开(公告)日：2013-05-02
申请号：PCT/US2012055009
申请日：2012-09-13
申请人： APPLIED MATERIALS INC , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
发明人： WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

8. 发明申请

WO2012177293A2 TRANSMISSION LINE RF APPLICATOR FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的传输线RF应用器
公开(公告)号：WO2012177293A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/000298
申请日：2012-06-21
申请人： APPLIED MATERIALS, INC. , KUDELA, Jozef , TANAKA, Tsutomu , SORENSEN, Carl, A. , ANWAR, Suhail , WHITE, John, M. , SHINDE, Ranjit, Indrajit , CHO, Seon-Mee , TRUONG, Douglas, D.
发明人： KUDELA, Jozef , TANAKA, Tsutomu , SORENSEN, Carl, A. , ANWAR, Suhail , WHITE, John, M. , SHINDE, Ranjit, Indrajit , CHO, Seon-Mee , TRUONG, Douglas, D.
IPC分类号： H05H1/46 , H01P3/10 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/3222 , H05H2001/463
摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译：用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。该装置包括内部导体和一个或两个外部导体。一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。

9. 发明申请

WO2013040127A2 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线型大面积等离子体反应器中均匀处理的气体输送与分配
公开(公告)号：WO2013040127A2
公开(公告)日：2013-03-21
申请号：PCT/US2012/055009
申请日：2012-09-13
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef , SORENSEN, Carl A. , WON, Tae K. , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , JOHNSTON, Benjamin M.
发明人： WHITE, John M. , ANWAR, Suhail , KUDELA, Jozef , SORENSEN, Carl A. , WON, Tae K. , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , JOHNSTON, Benjamin M.
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：用于将气体引入处理室的设备包括一个或多个气体分配管，所述气体分配管具有尺寸更大，数量更多和/ 气体引入管，其中气体注入孔需要更大的气体传导。具有较大气体喷射孔的外部管可以围绕每个气体分配管。气体分配管可以流体连接到真空前级管路上，以便于在处理循环结束时从气体分配管中除去气体。

10. 发明申请

WO2010042860A3 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体处理室的RF返回路径
公开(公告)号：WO2010042860A3
公开(公告)日：2010-07-15
申请号：PCT/US2009060230
申请日：2009-10-09
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架，衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

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