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1. 发明申请

WO2010042860A3 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体处理室的RF返回路径
公开(公告)号：WO2010042860A3
公开(公告)日：2010-07-15
申请号：PCT/US2009060230
申请日：2009-10-09
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , KUDELA JOZEF , BAEK JONGHOON , CHEN JRJYAN JERRY , MCPHERSON STEPHEN , TINER ROBIN L
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架，衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

2. 发明申请

WO2011146571A3 TIGHTLY-FITTED CERAMIC INSULATOR ON LARGE-AREA ELECTRODE 审中-公开
标题翻译：大面积电极上的贴合陶瓷绝缘子
公开(公告)号：WO2011146571A3
公开(公告)日：2012-03-08
申请号：PCT/US2011036932
申请日：2011-05-18
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , BAEK JONGHOON , WHITE JOHN M , TINER ROBIN L , ANWAR SUHAIL
发明人： KUDELA JOZEF , BAEK JONGHOON , WHITE JOHN M , TINER ROBIN L , ANWAR SUHAIL
IPC分类号： C23C16/455 , C23C16/44 , H01L21/205
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

3. 发明申请

WO2010083271A3 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：天然气引进开口的基板支持
公开(公告)号：WO2010083271A3
公开(公告)日：2010-10-21
申请号：PCT/US2010020979
申请日：2010-01-14
申请人： APPLIED MATERIALS INC , KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
发明人： KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例总体上涉及用于将衬底基本上齐平地抵靠在处理室中的衬底支撑件上的设备和方法。当大面积衬底放置在衬底支撑件上时，由于可能存在于衬底和衬底支撑件之间的气穴，衬底可能不完全与衬底支撑件齐平。气穴会导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉出气体可以将衬底基本上与支撑件齐平。在沉积过程中，静电荷可能累积并导致基材粘附在基材支撑件上。通过在衬底和衬底支撑件之间引入气体，静电力可以被克服，使得衬底可以与较少的或不需要等离子体支撑的承受器分开，这需要额外的时间和气体。

4. 发明申请

WO2010091205A3 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A3
公开(公告)日：2010-11-25
申请号：PCT/US2010023236
申请日：2010-02-04
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
发明人： CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF装置之一或两者的位移电极实现接地返回路径，耦合到腔室的底部的RF装置和电极或其组合。

5. 发明申请

WO2013040127A3 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：WO2013040127A3
公开(公告)日：2013-05-02
申请号：PCT/US2012055009
申请日：2012-09-13
申请人： APPLIED MATERIALS INC , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
发明人： WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

6. 发明申请

WO2009082763A2 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：WO2009082763A2
公开(公告)日：2009-07-02
申请号：PCT/US2008088351
申请日：2008-12-24
申请人： APPLIED MATERIALS INC , KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
发明人： KUDELA JOZEF , FURUTA GAKU , SORENSEN CARL A , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').
摘要翻译：系统，方法和装置包括用于在衬底（232）上沉积膜（231）的等离子体处理室（200,200'，200“）。等离子体处理室（200）包括具有接地板（225），背板（240）和存在于接地板（225）和背板（2）之间的不均匀性（201）的盖组件 240）。不均匀性（201）可能会干扰RF波均匀性，并导致接地板（225）和背板（240）的部分之间的阻抗不平衡。不均匀性（201）可以包括不均匀表面的结构（300）或减小的间隔（400）。可以存在不均匀表面的减小的间隔（400），其中在第一端（402）处的接地板（225）和背板（240）之间的第一距离（d1，d2）不同于第二距离 d3）在第二端（404）处于接地板（225）和背板（240）之间。结构（300）可以为2cm至10cm厚，覆盖背板（240）的20％至50％，并且位于远离存在于室（200'）内部的不连续（207）的位置。

7. 发明申请

WO2012109113A3 METHOD FOR ENCAPSULATING AN ORGANIC LIGHT EMITTING DIODE 审中-公开
标题翻译：用于封装有机发光二极管的方法
公开(公告)号：WO2012109113A3
公开(公告)日：2012-11-29
申请号：PCT/US2012023853
申请日：2012-02-03
申请人： APPLIED MATERIALS INC , HAAS DIETER , WHITE JOHN M , KWAK BYUNG-SUNG LEO , CHOI SOO YOUNG , CHEN JRJYAN JERRY , DIEGUEZ-CAMPO JOSE MANUEL
发明人： HAAS DIETER , WHITE JOHN M , KWAK BYUNG-SUNG LEO , CHOI SOO YOUNG , CHEN JRJYAN JERRY , DIEGUEZ-CAMPO JOSE MANUEL
IPC分类号： H01L51/50 , H01L51/56 , H05B33/04
CPC分类号： H01L51/0014 , H01L51/5253
摘要： Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process.
摘要翻译：提供了使用软/聚合物掩模技术封装设置在基板上的OLED结构的方法。与常规硬掩模图案化技术相比，软/聚合物掩模技术可以有效地提供简单且低成本的OLED封装方法。软/聚合物掩模技术可以利用单一聚合物掩模以低成本完成整个封装工艺，并且在使用常规金属掩模时不存在对准问题。不是使用软/聚合物掩模，而是可以将封装层消隐沉积，然后激光烧蚀，使得在封装过程中不使用掩模。

8. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

9. 发明申请

WO2008079742A3 PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 审中-公开
标题翻译：防止膜电沉积在PECVD工艺室壁上
公开(公告)号：WO2008079742A3
公开(公告)日：2008-10-30
申请号：PCT/US2007087597
申请日：2007-12-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
发明人： WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： C23C16/4585 , C23C16/4586 , H01J37/32495 , H01J37/32623
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

10. 发明申请

WO2013133983A1 SUBSTRATE SUPPORT WITH CERAMIC INSULATION 审中-公开
标题翻译：陶瓷绝缘基片支持
公开(公告)号：WO2013133983A1
公开(公告)日：2013-09-12
申请号：PCT/US2013027168
申请日：2013-02-21
申请人： APPLIED MATERIALS INC , FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , WHITE JOHN M , KURITA SHINICHI , CHOI SOO YOUNG , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/683 , C23C16/458 , G02F1/13 , H01L21/205
CPC分类号： C23C16/458 , C23C16/4585 , H01J37/32559 , H01J37/32577 , H01J37/32715
摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.
摘要翻译：本发明的实施例总体上涉及用于等离子体处理室中的衬底支撑件。金属衬底支撑件具有陶瓷插入物以防止衬底支撑件与用于在处理期间保护衬底支撑件的边缘的阴影框架之间发生电弧。在大面积衬底处理室中，阴影框架可以包括多个部件。各个部件可以连接在一起，但稍微间隔开一个间隙以允许热膨胀。陶瓷插入物定位在基底支撑件上，使得当阴影框架与其相邻定位时，陶瓷插入物位于阴影框架中的间隙附近。邻近间隙的陶瓷插入物防止和/或减少电弧放电，因为间隙位于电绝缘材料上而不是导电材料上。

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