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1. 发明申请

WO2007002040A3 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 审中-公开
标题翻译：曝光沉积过程中形成含硅材料的方法
公开(公告)号：WO2007002040A3
公开(公告)日：2009-03-19
申请号：PCT/US2006023915
申请日：2006-06-20
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
发明人： SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
IPC分类号： H01L21/318 , H01L21/469
CPC分类号： H01L21/3185 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52
摘要： Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要翻译：本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜的方法。膜沉积在衬底上并且包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。光致激发过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

2. 发明申请

WO2012115907A3 EDGE RING FOR A THERMAL PROCESSING CHAMBER 审中-公开
标题翻译：用于热处理室的边缘环
公开(公告)号：WO2012115907A3
公开(公告)日：2013-01-24
申请号：PCT/US2012025818
申请日：2012-02-20
申请人： APPLIED MATERIALS INC , KOELMEL BLAKE , RANISH JOSEPH M , MAYUR ABHILASH J
发明人： KOELMEL BLAKE , RANISH JOSEPH M , MAYUR ABHILASH J
IPC分类号： H01L21/683 , G02F1/13 , H01L21/324
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译：本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。

3. 发明申请

WO2009137773A2 APPARATUS AND METHODS FOR HYPERBARIC RAPID THERMAL PROCESSING 审中-公开
标题翻译：超快速热处理装置及方法
公开(公告)号：WO2009137773A2
公开(公告)日：2009-11-12
申请号：PCT/US2009043305
申请日：2009-05-08
申请人： APPLIED MATERIALS INC , RANISH JOSEPH M , SORABJI KHURSHED , LERNER ALEXANDER N , HUNTER AARON M
发明人： RANISH JOSEPH M , SORABJI KHURSHED , LERNER ALEXANDER N , HUNTER AARON M
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.
摘要翻译：描述了用于衬底高压快速热处理的方法和装置。描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至绝对压力大于1.5个大气压，并将辐射能量引向基板。描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。处理室可以包括压力控制阀，以控制室内的压力。

4. 发明申请

WO2012125469A3 OFF-ANGLED HEATING OF THE UNDERSIDE OF A SUBSTRATE USING A LAMP ASSEMBLY 审中-公开
标题翻译：使用灯泡组件的底板的离散加热
公开(公告)号：WO2012125469A3
公开(公告)日：2012-12-27
申请号：PCT/US2012028521
申请日：2012-03-09
申请人： APPLIED MATERIALS INC , EWERT MAURICE E , SUBRAMANI ANANTHA K , KELKAR UMESH M , BALASUBRAMANYAM CHANDRASEKHAR , RANISH JOSEPH M
发明人： EWERT MAURICE E , SUBRAMANI ANANTHA K , KELKAR UMESH M , BALASUBRAMANYAM CHANDRASEKHAR , RANISH JOSEPH M
IPC分类号： H01L21/205
CPC分类号： C23C14/5806 , C23C14/34 , C23C14/3435 , C23C14/541 , C23C16/4581 , C23C16/481 , H01J37/3411 , H01J37/3488 , H01L21/02104 , H01L21/28518 , H01L21/2855 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/76882
摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
摘要翻译：公开了用于处理基材的方法和装置。该装置是双功能处理室，其可以在基板上进行材料处理和热处理。该室具有设置在处理位置和室的输送位置之间的环形辐射源。提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。然后可以沉积第二种材料，部分地或完全地填充孔。或者，可以执行循环沉积/回流工艺。

5. 发明申请

WO2011112812A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A2
公开(公告)日：2011-09-15
申请号：PCT/US2011027900
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

6. 发明申请

WO2011044407A3 APPARATUS AND METHOD FOR IMPROVED CONTROL OF HEATING AND COOLING OF SUBSTRATES 审中-公开
标题翻译：改进控制加热和冷却基板的装置和方法
公开(公告)号：WO2011044407A3
公开(公告)日：2011-07-21
申请号：PCT/US2010051893
申请日：2010-10-08
申请人： APPLIED MATERIALS INC , KOELMEL BLAKE R , TAM NORMAN L , RANISH JOSEPH M
发明人： KOELMEL BLAKE R , TAM NORMAN L , RANISH JOSEPH M
IPC分类号： H01L21/324
CPC分类号： H01L21/2636 , H01L21/67098 , H01L21/67115
摘要： Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.
摘要翻译：描述了用于处理衬底和控制衬底的加热和冷却的方法和设备。提供在第一波长范围内的辐射的辐射源将衬底加热到预定温度范围内，所述衬底吸收在第一波长范围内和在预定温度范围内的第二波长范围内的辐射。滤光器防止第二波长范围内的至少一部分辐射到达基板。

7. 发明申请

WO2012166313A4 APPARATUS AND METHODS FOR POSITIONING A SUBSTRATE USING CAPACITIVE SENSORS 审中-公开
标题翻译：用电容传感器定位基片的装置和方法
公开(公告)号：WO2012166313A4
公开(公告)日：2013-03-14
申请号：PCT/US2012037311
申请日：2012-05-10
申请人： APPLIED MATERIALS INC , KOELMEL BLAKE , RANISH JOSEPH M , SANCHEZ ERROL C
发明人： KOELMEL BLAKE , RANISH JOSEPH M , SANCHEZ ERROL C
IPC分类号： H01L21/68
CPC分类号： H01L21/68 , H01L21/67115 , H01L21/67259
摘要： Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.
摘要翻译：本发明的实施例提供使用电容传感器将衬底定位在处理室中的设备和方法。本发明的一个实施例提供了一种用于处理基板的设备。该装置包括设置在内部容积中的第一和第二电容式传感器。第一电容式传感器被定位成在第一角度位置处检测衬底的边缘的位置。第二电容式传感器定位成检测基板的垂直位置。

8. 发明申请

WO2010115117A2 LAMP WITH INTERNAL FUSE SYSTEM 审中-公开
标题翻译：带内部保险丝系统的灯
公开(公告)号：WO2010115117A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029802
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , MYO NYI OO , RANISH JOSEPH M , TAKAHASHI AKIO
发明人： RAMACHANDRAN BALASUBRAMANIAN , MYO NYI OO , RANISH JOSEPH M , TAKAHASHI AKIO
IPC分类号： H01K1/66 , H01J61/50 , H01J61/56
CPC分类号： H01K1/66
摘要： Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.
摘要翻译：本文提供具有内部熔丝系统的灯的实施例。在一些实施例中，灯可以包括透明外壳; 布置在所述壳体中的细丝，所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒，其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体，其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接，其中第一拦截棒被定位成使得当第一和第二导体之间形成电短路时，的灯丝接触第一拦截棒。

9. 发明申请

WO2010006156A3 RAPID THERMAL PROCESSING CHAMBER WITH SHOWER HEAD 审中-公开
标题翻译：快速热处理室与淋浴头
公开(公告)号：WO2010006156A3
公开(公告)日：2010-03-11
申请号：PCT/US2009050085
申请日：2009-07-09
申请人： APPLIED MATERIALS INC , SORABJI KHURSHED , RANISH JOSEPH M , ADERHOLD WOLFGANG , HUNTER AARON M , LERNER ALEXANDER N
发明人： SORABJI KHURSHED , RANISH JOSEPH M , ADERHOLD WOLFGANG , HUNTER AARON M , LERNER ALEXANDER N
IPC分类号： H01L21/324
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理衬底的设备和方法。容纳悬浮支撑组件的腔室，所述悬浮支撑组件被配置成在基板的加热和冷却期间将基板定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口被构造成将气体均匀地分布在衬底的径向表面上。气体的分布可以将在热处理期间未反射回衬底的辐射能量与板的吸收区域耦合以开始衬底的冷却。所提供的方法和装置允许用于快速热处理衬底的可控和有效的装置。

10. 发明申请

WO2009126529A3 APPARATUS INCLUDING HEATING SOURCE REFLECTIVE FILTER FOR PYROMETRY 审中-公开
标题翻译：装置包括加热源反射滤光片
公开(公告)号：WO2009126529A3
公开(公告)日：2009-12-17
申请号：PCT/US2009039443
申请日：2009-04-03
申请人： APPLIED MATERIALS INC , RANISH JOSEPH M , HUNTER AARON M , KOELMEL BLAKE R
发明人： RANISH JOSEPH M , HUNTER AARON M , KOELMEL BLAKE R
IPC分类号： H01L21/324
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译：公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。反射层设置在处理室的窗口上。提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。在第二波长范围内的辐射被反射层反射。

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