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1. 发明申请

WO2010114823A2 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

2. 发明申请

WO2010114823A3 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

3. 发明申请

WO2010115128A4 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A4
公开(公告)日：2011-03-03
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

4. 发明申请

WO2010115128A2 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

5. 发明申请

WO2010115128A3 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

6. 发明申请

WO2011156650A3 LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING 审中-公开
标题翻译：具有增强离子化和射频功率耦合的低电阻TUNGSTEN PVD
公开(公告)号：WO2011156650A3
公开(公告)日：2012-04-19
申请号：PCT/US2011039867
申请日：2011-06-09
申请人： APPLIED MATERIALS INC , CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , WANG WEI D , LIU ZHENDONG , MORAES KEVIN , RASHEED MUHAMMAD M , NGUYEN THANH X , JUPUDI ANANTHKRISHNA
发明人： CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , WANG WEI D , LIU ZHENDONG , MORAES KEVIN , RASHEED MUHAMMAD M , NGUYEN THANH X , JUPUDI ANANTHKRISHNA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/43
CPC分类号： H01L21/28079 , C23C14/165 , C23C14/345 , C23C14/35 , H01L21/28088 , H01L21/2855 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.
摘要翻译：本文描述的实施例提供了一种半导体器件及其形成方法和装置。半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

7. 发明申请

WO2012015993A2 MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY 审中-公开
标题翻译：用于生产具有低电阻率和非均匀性的薄膜的物理蒸气沉积方法的磁体
公开(公告)号：WO2012015993A2
公开(公告)日：2012-02-02
申请号：PCT/US2011045644
申请日：2011-07-28
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , NGUYEN THANH , RASHEED MUHAMMAD
发明人： LIU ZHENDONG , CAO YONG , TANG XIANMIN , GANDIKOTA SRINIVAS , NGUYEN THANH , RASHEED MUHAMMAD
IPC分类号： H01L21/203 , C23C14/35
CPC分类号： H01J37/3405 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3461 , H01J2237/3323
摘要： Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.
摘要翻译：本文提供了用于沉积具有高厚度均匀性和低电阻率的薄膜的方法和设备。在一些实施例中，磁控管组件包括分流板，可绕轴线旋转的分流板，耦合到分流板的内部闭环磁极和耦合分流板的外部闭环磁极，其中，外部闭环磁极的磁场强度与内部闭环磁极的磁场强度小于约1.在一些实施例中，该比率为约0.57。在一些实施例中，分流板和外闭环磁极具有心形形状。还公开了一种利用RF和DC电力与本发明的磁控管组合的方法。

8. 发明申请

WO2011143527A2 PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 审中-公开
标题翻译：用于改善颗粒减少的工艺套件
公开(公告)号：WO2011143527A2
公开(公告)日：2011-11-17
申请号：PCT/US2011036395
申请日：2011-05-13
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD , WANG RONGJUN , LIU ZHENDONG , FU XINYU , TANG XIANMIN
发明人： RASHEED MUHAMMAD , WANG RONGJUN , LIU ZHENDONG , FU XINYU , TANG XIANMIN
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
摘要翻译：本文提供了用于改善颗粒减少的装置。在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积材料从物理气相沉积室的目标。

9. 发明申请

WO2011156349A3 METHODS FOR FORMING INTERCONNECT STRUCTURES 审中-公开
标题翻译：形成互连结构的方法
公开(公告)号：WO2011156349A3
公开(公告)日：2012-04-05
申请号：PCT/US2011039414
申请日：2011-06-07
申请人： APPLIED MATERIALS INC , LEE JOUNG JOO , TANG XIANMIN , GUNG TZA-JING
发明人： LEE JOUNG JOO , TANG XIANMIN , GUNG TZA-JING
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/345 , C23C14/3492 , H01L21/76882
摘要： Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.
摘要翻译：本文提供形成互连结构的方法。在一些实施例中，用于在衬底上形成互连的方法可以包括在衬底的上表面顶部沉积材料，并且通过第一沉积工艺沉积位于衬底中的特征的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。

10. 发明申请

WO2010048094A2 PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION 审中-公开
标题翻译：采用增强型铜离子电镀技术的PVD CU种子悬臂再次溅镀
公开(公告)号：WO2010048094A2
公开(公告)日：2010-04-29
申请号：PCT/US2009061184
申请日：2009-10-19
申请人： APPLIED MATERIALS INC , CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
发明人： CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
IPC分类号： H01L21/203
CPC分类号： C23C14/185 , C23C14/046 , C23C14/5833 , H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76871 , H01L21/76883
摘要： A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.
摘要翻译：提供了用于在图案化衬底上沉积金属的方法和装置。在具有第一能量的物理气相沉积工艺中形成金属层。使用第二能量在金属层上执行第二物理气相沉积工艺，其中沉积与脆性和塑性表面改性工艺相互作用以在基板上形成基本上共形的金属层。

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