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    • 8. 发明申请
    • PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER CURVATURE
    • 气体扩散器曲率的等离子体均匀性控制
    • WO2006017136A3
    • 2006-09-21
    • PCT/US2005024165
    • 2005-07-07
    • APPLIED MATERIALS INCCHOI SOO YOUNGPARK BEOM SOOWHITE JOHN MTINER ROBIN L
    • CHOI SOO YOUNGPARK BEOM SOOWHITE JOHN MTINER ROBIN L
    • C23C16/455C23C16/509
    • C23C16/45565C23C16/455C23C16/5096
    • Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
    • 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中,用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过的气体通道和在气体通道的下游侧的空心阴极腔的扩散板。 扩散板的下游侧具有曲率以改善通过PECVD沉积的薄膜,特别是SiN和非晶硅膜的厚度均匀性和膜性能均匀性。 曲率优选由圆或椭圆的弧形描述,其顶点位于扩散板的中心点处。 一方面,扩散器的空心阴极腔体积密度,表面积密度或腔体密度从扩散器的中心到外边缘增加。 还提供了制造这种扩散板的方法。