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1. 发明申请

WO2010132716A3 ANODIZED SHOWERHEAD 审中-公开
标题翻译：阳光淋浴
公开(公告)号：WO2010132716A3
公开(公告)日：2011-02-10
申请号：PCT/US2010034806
申请日：2010-05-13
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
发明人： CHOI SOO YOUNG , ANWAR SUHAIL , FURUTA GAKU , PARK BEOM SOO , TINER ROBIN L , WHITE JOHN M , KURITA SHINICHI
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of het showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最接近室壁的淋浴喷头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

2. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

3. 发明申请

WO2009142911A3 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：WO2009142911A3
公开(公告)日：2010-03-04
申请号：PCT/US2009043001
申请日：2009-05-06
申请人： APPLIED MATERIALS INC , WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
发明人： WHITE JOHN M , CHOI SOO YOUNG , PARK BEOM SOO , FURUTA GAKU , CHOI YOUNG JIN , TINER ROBIN L
IPC分类号： H01L21/205 , H01L21/02 , H01L21/3065
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

4. 发明申请

WO2010083271A3 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：天然气引进开口的基板支持
公开(公告)号：WO2010083271A3
公开(公告)日：2010-10-21
申请号：PCT/US2010020979
申请日：2010-01-14
申请人： APPLIED MATERIALS INC , KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
发明人： KIM SAM H , WHITE JOHN M , CHOI SOO YOUNG , SORENSEN CARL A , TINER ROBIN L , PARK BEOM SOO
IPC分类号： H01L21/683 , H01L21/203 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例总体上涉及用于将衬底基本上齐平地抵靠在处理室中的衬底支撑件上的设备和方法。当大面积衬底放置在衬底支撑件上时，由于可能存在于衬底和衬底支撑件之间的气穴，衬底可能不完全与衬底支撑件齐平。气穴会导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉出气体可以将衬底基本上与支撑件齐平。在沉积过程中，静电荷可能累积并导致基材粘附在基材支撑件上。通过在衬底和衬底支撑件之间引入气体，静电力可以被克服，使得衬底可以与较少的或不需要等离子体支撑的承受器分开，这需要额外的时间和气体。

5. 发明申请

WO2008079742A3 PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 审中-公开
标题翻译：防止膜电沉积在PECVD工艺室壁上
公开(公告)号：WO2008079742A3
公开(公告)日：2008-10-30
申请号：PCT/US2007087597
申请日：2007-12-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
发明人： WHITE JOHN M , PARK BEOM SOO , TINER ROBIN L , CHOI SOO YOUNG
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： C23C16/4585 , C23C16/4586 , H01J37/32495 , H01J37/32623
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

6. 发明申请

WO2006017136A3 PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER CURVATURE 审中-公开
标题翻译：气体扩散器曲率的等离子体均匀性控制
公开(公告)号：WO2006017136A3
公开(公告)日：2006-09-21
申请号：PCT/US2005024165
申请日：2005-07-07
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , TINER ROBIN L
发明人： CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , TINER ROBIN L
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过的气体通道和在气体通道的下游侧的空心阴极腔的扩散板。扩散板的下游侧具有曲率以改善通过PECVD沉积的薄膜，特别是SiN和非晶硅膜的厚度均匀性和膜性能均匀性。曲率优选由圆或椭圆的弧形描述，其顶点位于扩散板的中心点处。一方面，扩散器的空心阴极腔体积密度，表面积密度或腔体密度从扩散器的中心到外边缘增加。还提供了制造这种扩散板的方法。

7. 发明申请

WO2012092020A2 THIN FILM DEPOSITION USING MICROWAVE PLASMA 审中-公开
标题翻译：薄膜沉积使用微波等离子体
公开(公告)号：WO2012092020A2
公开(公告)日：2012-07-05
申请号：PCT/US2011066124
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
发明人： WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
IPC分类号： H01L21/205
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：本发明的实施方案通常提供使用改进的微波辅助CVD室的含硅介电层的沉积工艺。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法通常包括将微波功率施加到耦合到设置在处理室内的微波源的天线，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置为提供覆盖基板整个表面的气体分布覆盖，并将衬底暴露于由气体供给源提供的处理气体产生的微波等离子体中，以在低于约200摄氏度的温度下将含硅层沉积在衬底上，微波等离子体使用约500毫瓦的微波功率 cm 2至约5,000毫瓦/ cm 2，频率约为1GHz至约10GHz。

8. 发明申请

WO2013040127A3 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：WO2013040127A3
公开(公告)日：2013-05-02
申请号：PCT/US2012055009
申请日：2012-09-13
申请人： APPLIED MATERIALS INC , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
发明人： WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF , SORENSEN CARL A , WON TAE K , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , JOHNSTON BENJAMIN M
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

9. 发明申请

WO2009129391A3 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT 审中-公开
标题翻译：低温薄膜晶体管工艺，器件性能和器件稳定性改进
公开(公告)号：WO2009129391A3
公开(公告)日：2010-02-18
申请号：PCT/US2009040811
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
发明人： YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
摘要翻译：提供一种用于形成薄膜晶体管的方法和装置。形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。在一些实施例中，第一介电层是富硅的氮化硅层。形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

10. 发明申请

WO2008154446A3 AN APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于沉积均匀硅膜的装置及其制造方法
公开(公告)号：WO2008154446A3
公开(公告)日：2009-02-26
申请号：PCT/US2008066210
申请日：2008-06-06
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
发明人： CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

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