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1. 发明申请

WO2010021938A2 SHOWERHEAD AND SHADOW FRAME 审中-公开
标题翻译：喷头和阴影框架
公开(公告)号：WO2010021938A2
公开(公告)日：2010-02-25
申请号：PCT/US2009053922
申请日：2009-08-14
申请人： APPLIED MATERIALS INC , CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
发明人： CHO TOM K , YUAN ZHENG , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/042 , C23C16/45565 , C23C16/505
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.
摘要翻译：本发明总体上涉及用于设备的气体分配喷头和阴影框架。通过延伸气体分配喷头的角部，电极区域可以相对于阳极膨胀，并且因此可以获得均匀的膜特性。另外，气体分配喷头的扩展拐角可具有延伸穿过其中的气体通道。在一个实施例中，空心阴极腔可以存在于喷头的底表面上而不允许气体通过。装置中的阴影框架也可以使其角部区域伸出以扩大正被处理的衬底的角部区域中的阳极，并因此可导致在具有基本上均匀特性的衬底上沉积材料。

2. 发明申请

WO2009154889A3 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A3
公开(公告)日：2010-02-25
申请号：PCT/US2009043189
申请日：2009-05-07
申请人： APPLIED MATERIALS INC , CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
发明人： CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

3. 发明申请

WO2011028349A2 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含硅薄膜沉积的远离氢等离子体源
公开(公告)号：WO2011028349A2
公开(公告)日：2011-03-10
申请号：PCT/US2010044133
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
发明人： YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了用于在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，用于在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，处理室，向处理室施加小于17.5mWatt / cm 2的RF功率，以及在衬底上形成含硅层。

4. 发明申请

WO2005064651A2 IMPROVED GAP-FILL TECHNIQUES 审中-公开
标题翻译：改进的间隙填充技术
公开(公告)号：WO2005064651A2
公开(公告)日：2005-07-14
申请号：PCT/US2004043698
申请日：2004-12-21
申请人： APPLIED MATERIALS INC , MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
发明人： MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/00
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独或组合使用各种技术来改善由化学气相沉积（CVD）形成的介电材料的间隙填充性能。在一种方法中，使用次大气压化学气相沉积（SACVD）沉积第一介电层，然后使用高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积第二介电层，。在另一种方法中，在存在从远程等离子体室流入处理室的反应性离子物质的情况下沉积SACVD电介质层，其在沉积处理期间执行蚀刻。在另一种方法中，可以利用SACVD结合在高温下沉积的氧化物层来填充高方面沟槽。

5. 发明申请

WO2011084381A3 CLEANING OPTIMIZATION OF PECVD SOLAR FILMS 审中-公开
标题翻译： PECVD太阳膜的清洁优化
公开(公告)号：WO2011084381A3
公开(公告)日：2011-10-06
申请号：PCT/US2010060107
申请日：2010-12-13
申请人： APPLIED MATERIALS INC , SCHMITT FRANCIMAR C , YUAN ZHENG , ZHENG YI , YANG FAN , LI LIPAN
发明人： SCHMITT FRANCIMAR C , YUAN ZHENG , ZHENG YI , YANG FAN , LI LIPAN
IPC分类号： H01L31/042 , H01L21/302 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1816 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.
摘要翻译：本发明的实施例通常提供一种用于在衬底处理室中形成多个薄膜单结或多结太阳能电池的方法。在一个实施例中，一种用于处理多个薄膜太阳能电池基板的方法包括：在单个处理腔室中的第一基板和腔室部件的表面上顺序地沉积第一未掺杂层和第一掺杂层，去除具有掺杂和未掺杂层，去除沉积在腔室部件上的第二掺杂层，以暴露下层第一未掺杂层，该第一未掺杂层用作待处理腔室中待处理的第二衬底的调料层，以及顺序沉积第二未掺杂层以及在处理室中的第二衬底上的第二掺杂层。在一个示例中，第一未掺杂层是非晶硅或微晶硅。可以以期望的间隔执行完整的清洁过程，以在常规调味过程和随后的沉积在处理室中进行之前暴露室部件的表面。

6. 发明申请

WO2011011301A3 A MIXED SILICON PHASE FILM FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：用于高效薄膜硅太阳能电池的混合硅胶片
公开(公告)号：WO2011011301A3
公开(公告)日：2011-05-05
申请号：PCT/US2010042392
申请日：2010-07-19
申请人： APPLIED MATERIALS INC , YANG FAN , ZHANG LIN , ZHENG YI , SCHMITT FRANCIMAR , YUAN ZHENG
发明人： YANG FAN , ZHANG LIN , ZHENG YI , SCHMITT FRANCIMAR , YUAN ZHENG
IPC分类号： H01L31/075
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括形成在衬底上的第一pin结单元，其中该pin结单元包括p型含硅层，在p型含硅层上形成本征型含硅层，以及在本征型含硅层上形成n型含硅层，其中本征型含硅层包括第一对微晶层和非晶硅层。

7. 发明申请

WO2010011476A3 DEPOSITION METHODS AND RELEASING STRESS BUILDUP 审中-公开
标题翻译：沉积方法和释放应力建筑
公开(公告)号：WO2010011476A3
公开(公告)日：2010-04-15
申请号：PCT/US2009049300
申请日：2009-06-30
申请人： APPLIED MATERIALS INC , TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
发明人： TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/76224
摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.
摘要翻译：提供了一种通过电介质材料释放在半导体衬底上的特征的应力累积的沉积方法。该功能包括由间隙隔开的线。该方法包括在腔室中的半导体衬底上的特征上形成衬垫层。衬垫层在特征上的应力被释放，以显着减少特征线的弯曲。电介质膜沉积在应力释放衬垫层上，以基本上填充特征的间隙。

8. 发明申请

WO2012057906A1 A SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
标题翻译：用于太阳能电池应用的透明导电氧化层的表面处理工艺
公开(公告)号：WO2012057906A1
公开(公告)日：2012-05-03
申请号：PCT/US2011049013
申请日：2011-08-24
申请人： APPLIED MATERIALS INC , SHENG SHURAN , ZHANG LIN , YUAN ZHENG , CHAE YONG KEE
发明人： SHENG SHURAN , ZHANG LIN , YUAN ZHENG , CHAE YONG KEE
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/042
CPC分类号： H01L31/076 , H01L31/022466 , H01L31/022483 , H01L31/1884 , Y02E10/548
摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.
摘要翻译：本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。在一个实施例中，执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底，将包含含氧气体的气体混合物供应到处理室中，并且使用在透明导电氧化物层的表面上的气体混合物。

9. 发明申请

WO2007140424A3 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：WO2007140424A3
公开(公告)日：2008-02-21
申请号：PCT/US2007069999
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , INGLE NITIN K , YUAN ZHENG , GEE PAUL , SAPRE KEDAR
发明人： INGLE NITIN K , YUAN ZHENG , GEE PAUL , SAPRE KEDAR
IPC分类号： C23C16/40
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。该方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，并将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

10. 发明申请

WO2005071740A3 LIMITED THERMAL BUDGET FORMATION OF PRE-METAL DIELECTRIC LAYERS 审中-公开
标题翻译：有限公司预制金属电介质层的形成
公开(公告)号：WO2005071740A3
公开(公告)日：2005-11-10
申请号：PCT/US2005000728
申请日：2005-01-10
申请人： APPLIED MATERIALS INC , YUAN ZHENG , VENKATARAMAN SHANKAR , CHING CARY , WONG SHAN , MUKAI KEVIN MIKIO , INGLE NITIN K
发明人： YUAN ZHENG , VENKATARAMAN SHANKAR , CHING CARY , WONG SHAN , MUKAI KEVIN MIKIO , INGLE NITIN K
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/316 , H01L21/768 , H01L21/314
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap which is defined by adjacent raised features on a substrate includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between a silicon-containing processing gas, a phosphorous-containing processing gas, and an oxidizing processing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500°C throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°C throughout deposition of the bulk layer.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括：通过使含硅处理气体，含磷处理气体和氧化处理气体。沉积保形层包括随着时间的推移，在沉积保形层的过程中（含硅处理气体加上含磷处理气体）：氧化处理气体）和将基板的温度保持在约500℃以下。该方法还包括沉积作为体层的P掺杂氧化硅膜的第二部分。沉积薄膜的第二部分包括在沉积本体层期间保持（含硅处理气体加含磷处理气体）:(氧化处理气体）的比例基本上恒定，并将基板的温度维持在约500℃以下在整个沉积层中。

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