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1. 发明申请

WO2005064651A2 IMPROVED GAP-FILL TECHNIQUES 审中-公开
标题翻译：改进的间隙填充技术
公开(公告)号：WO2005064651A2
公开(公告)日：2005-07-14
申请号：PCT/US2004043698
申请日：2004-12-21
申请人： APPLIED MATERIALS INC , MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
发明人： MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/00
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独或组合使用各种技术来改善由化学气相沉积（CVD）形成的介电材料的间隙填充性能。在一种方法中，使用次大气压化学气相沉积（SACVD）沉积第一介电层，然后使用高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积第二介电层，。在另一种方法中，在存在从远程等离子体室流入处理室的反应性离子物质的情况下沉积SACVD电介质层，其在沉积处理期间执行蚀刻。在另一种方法中，可以利用SACVD结合在高温下沉积的氧化物层来填充高方面沟槽。

2. 发明申请

WO2012094149A3 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A3
公开(公告)日：2013-01-31
申请号：PCT/US2011066275
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

3. 发明申请

WO2011109148A3 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A3
公开(公告)日：2012-02-23
申请号：PCT/US2011024378
申请日：2011-02-10
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
发明人： LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

4. 发明申请

WO2012015610A3 OXIDE-RICH LINER LAYER FOR FLOWABLE CVD GAPFILL 审中-公开
标题翻译：用于流动CVD GAPFILL的氧化物衬里层
公开(公告)号：WO2012015610A3
公开(公告)日：2012-04-26
申请号：PCT/US2011044219
申请日：2011-07-15
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Formation of gap-filling silicon oxide layer with reduced volume fraction of voids is described. Deposition involves formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within same chamber as gapfill layer. Liner layer and gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). Liner layer has more oxygen content than gapfill layer and deposits more conformally. Deposition rate of the gapfill layer may be increased by the presence of the liner layer. Gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. Presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
摘要翻译：描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。沉积涉及在贫氧的更易流动的间隙填充层之前形成富氧的较少流动的衬层。然而，衬垫层沉积在与间隙填充层相同的腔室内。衬里层和间隙填充层可以通过将自由基组分与未掺杂的含硅前体（即不通过施加等离子体功率直接激发）组合形成。衬垫层具有比间隙填充层更多的氧含量，并且更保守地沉积。间隙填充层的沉积速率可以通过衬垫层的存在而增加。填隙层可能含有硅，氧和氮，并在高温下转化为含有更多的氧和较少的氮。间隙填料衬垫的存在在间隙填充层下面提供氧气源，以增加在转化期间引入的气相氧。

5. 发明申请

WO2007030258A2 POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2 审中-公开
标题翻译：后沉积等离子体处理增加HDP-CVD SIO2的拉伸应力
公开(公告)号：WO2007030258A2
公开(公告)日：2007-03-15
申请号：PCT/US2006031191
申请日：2006-08-10
申请人： APPLIED MATERIALS INC , CHEN XIAOLIN , NEMANI SRINIVAS D , LI DONGQING , MUNRO JEFFREY C , MENEZES MARLON E
发明人： CHEN XIAOLIN , NEMANI SRINIVAS D , LI DONGQING , MUNRO JEFFREY C , MENEZES MARLON E
IPC分类号： H01L21/316 , C23C16/40 , C23C16/458 , H01L21/762
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
摘要翻译：描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。在衬底上沉积电介质层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力。本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并升高衬底的温度。在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中基板首先在沉积之后直接在处理位置暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置暴露于等离子体。

6. 发明申请

WO2007142669A3 DISPOSABLE REACTOR MODULE AND DETECTION SYSTEM 审中-公开
标题翻译：可拆卸反应堆模块和检测系统
公开(公告)号：WO2007142669A3
公开(公告)日：2008-10-30
申请号：PCT/US2006039053
申请日：2006-10-05
申请人： LI DONGQING
发明人： LI DONGQING
IPC分类号： C12M1/22
CPC分类号： B01L3/50851 , B01L2200/0684 , B01L2200/12 , B01L2300/0819 , B01L2300/0829 , B01L2300/0887 , G01N21/6428 , G01N21/6452 , G01N2021/6484
摘要： A disposable reactor module (48), monitoring/optical detection system and related hardware for, inter alia, chemical reactions including Polymerase Chain Reactions.
摘要翻译：一次性反应器模块（48），监测/光学检测系统和用于尤其是包括聚合酶链反应的化学反应的相关硬件。

7. 发明申请

WO03006161A3 MICROCHANNEL THERMAL REACTOR 审中-公开
标题翻译：微通道热反应器
公开(公告)号：WO03006161A3
公开(公告)日：2003-05-30
申请号：PCT/CA0201057
申请日：2002-07-11
申请人： LI DONGQING , ERICKSON DAVID
发明人： LI DONGQING , ERICKSON DAVID
IPC分类号： B01J19/00 , B01L3/00 , B01L7/00 , C12Q1/68
CPC分类号： B01L3/5027 , B01J19/0093 , B01J2219/00824 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/00853 , B01J2219/0086 , B01J2219/00873 , B01J2219/0095 , B01J2219/00961 , B01L7/525 , B01L2200/147 , B01L2300/0816 , B01L2300/0864 , B01L2300/1822 , B01L2300/1827 , B01L2400/0418
摘要： A low power microchannel thermal reactor for a biological or biochemical reaction. During the reaction, the biochemical or biological sample is heated by the microchannel with embedded in-channel heating elements and cooled by conduction and passive convection.
摘要翻译：用于生物或生化反应的低功率微通道热反应器。在反应过程中，生化或生物样品被带有嵌入式通道内加热元件的微通道加热，并通过传导和被动对流进行冷却。

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