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1. 发明申请

WO2009099721A3 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于制备化合物氮化物半导体器件的处理系统
公开(公告)号：WO2009099721A3
公开(公告)日：2009-10-15
申请号：PCT/US2009030862
申请日：2009-01-13
申请人： APPLIED MATERIALS INC , BURROWS BRIAN H , WASHINGTON LORI D , STEVENS RONALD , CHOI KENRIC T , WHITE ANTHONY F , ANDERSON ROGER N , NIJHAWAN SANDEEP , PODESTA JOSHUA J , TAM ALEXANDER
发明人： BURROWS BRIAN H , WASHINGTON LORI D , STEVENS RONALD , CHOI KENRIC T , WHITE ANTHONY F , ANDERSON ROGER N , NIJHAWAN SANDEEP , PODESTA JOSHUA J , TAM ALEXANDER
IPC分类号： H01L21/677 , H01L21/20 , H01L21/205 , H01L21/67
CPC分类号： C23C16/54 , C30B25/08 , C30B29/403 , C30B35/00 , H01L21/67017 , H01L21/67115 , H01L21/67161 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.
摘要翻译：用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的可操作的一个或多个处理室，与处理室耦合的传送室，与传送室耦合的负载锁定室，以及加载站与负载锁定室耦合，其中装载站包括可移动以将装载有一个或多个基板的承载板输送到负载锁定室中的输送器托盘。与单室反应器相比，多室处理系统扩大了复合结构的潜在复杂性和多样性。此外，该系统可以通过专用于特定外延生长工艺的各个室来实现更高的质量和产量。通过在多个室中同时处理来提高吞吐量。

2. 发明申请

WO2009099721A2 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于制造化合物氮化物半导体器件的处理系统
公开(公告)号：WO2009099721A2
公开(公告)日：2009-08-13
申请号：PCT/US2009030862
申请日：2009-01-13
申请人： APPLIED MATERIALS INC , BURROWS BRIAN H , WASHINGTON LORI D , STEVENS RONALD , CHOI KENRIC T , WHITE ANTHONY F , ANDERSON ROGER N , NIJHAWAN SANDEEP , PODESTA JOSHUA J , TAM ALEXANDER
发明人： BURROWS BRIAN H , WASHINGTON LORI D , STEVENS RONALD , CHOI KENRIC T , WHITE ANTHONY F , ANDERSON ROGER N , NIJHAWAN SANDEEP , PODESTA JOSHUA J , TAM ALEXANDER
IPC分类号： H01L21/677 , H01L21/20 , H01L33/00
CPC分类号： C23C16/54 , C30B25/08 , C30B29/403 , C30B35/00 , H01L21/67017 , H01L21/67115 , H01L21/67161 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.
摘要翻译：用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的一个或多个处理室，与处理室耦合的传输室，与传输室耦合的负载锁定室和所述加载站与所述加载锁定腔室耦合，其中所述加载站包括传送器托盘，所述传送器托盘可移动以将载有一个或多个衬底的载体板传送到所述加载锁定腔室中。与单室反应器相比，多室处理系统扩大了复合结构的复杂性和多样性。此外，该系统可以通过专用于特定外延生长工艺的独立腔室实现更高的质量和产量。通过多室同时处理增加吞吐量。

3. 发明申请

WO2008005754A3 MODULAR CHEMICAL VAPOR DEPOSITION (CVD) REACTOR 审中-公开
标题翻译：模块化学气相沉积（CVD）反应器
公开(公告)号：WO2008005754A3
公开(公告)日：2008-10-23
申请号：PCT/US2007072121
申请日：2007-06-26
申请人： APPLIED MATERIALS INC , BURROWS BRIAN H , METZNER CRAIG R , DEMARS DENNIS L , ANDERSON ROGER N , CHACIN JUAN M , CARLSON DAVID K , ISHIKAWA DAVID MASAYUKI , CAMPBELL JEFFREY , COLLINS RICHARD O , MAGILL KEITH M , AFZAL IMRAN
发明人： BURROWS BRIAN H , METZNER CRAIG R , DEMARS DENNIS L , ANDERSON ROGER N , CHACIN JUAN M , CARLSON DAVID K , ISHIKAWA DAVID MASAYUKI , CAMPBELL JEFFREY , COLLINS RICHARD O , MAGILL KEITH M , AFZAL IMRAN
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/67017 , H01L21/6719
摘要： The present invention provides an apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell. The modular semiconductor processing cell of the present invention comprises a chamber (201) having an inject cap (213) and a gas panel module (207) configured to supply one or more processing gases to the chamber through the inject cap, wherein the gas panel module is positioned adjacent the inject cap. The processing module further comprises a lamp module (203) positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.
摘要翻译：本发明提供一种半导体基板的处理装置。特别地，本发明提供了一种模块化处理单元。本发明的模块化半导体处理单元包括具有注入盖（213）和气体面板模块（207）的腔室（201），其配置成通过喷射盖将一个或多个处理气体供应到腔室，其中气体面板模块位于喷射盖附近。处理模块还包括位于室下方的灯模块（203）。灯模块包括多个垂直取向的灯。

4. 发明申请

WO2007040908A3 FILM FORMATION APPARATUS AND METHODS INCLUDING TEMPERATURE AND EMISSIVITY/PATTERN COMPENSATION 审中-公开
标题翻译：胶片形成装置及方法包括温度和动力学/图案补偿
公开(公告)号：WO2007040908A3
公开(公告)日：2009-04-16
申请号：PCT/US2006035031
申请日：2006-09-11
申请人： APPLIED MATERIALS INC , CHACIN JUAN , HUNTER AARON , METZNER CRAIG , ANDERSON ROGER N
发明人： CHACIN JUAN , HUNTER AARON , METZNER CRAIG , ANDERSON ROGER N
IPC分类号： C23C16/00 , C23C16/46 , C23C16/52
CPC分类号： C23C16/481 , C23C16/52
摘要： A film formation system (10) has a processing chamber (15) bounded by sidewalk (18) and a top cover (11). In one embodiment, the top cover (11) has a reflective surface (13) for reflecting radiant energy back onto a substrate (19), pyrometers (405) for measuring the temperature of the substrate (19) across a number of zones, and at least one emissometer (410) for measuring the actual emissivity of the substrate ( 19). In another embodiment, a radiant heating system (313) is disposed under the substrate support ( 16). The temperature of the substrate (19) is obtained from pyrometric data from the pyrometers (405), and the emissometer (410).
摘要翻译：成膜系统（10）具有由人行道（18）和顶盖（11）限定的处理室（15）。在一个实施例中，顶盖（11）具有用于将辐射能量反射回衬底（19）的反射表面（13），用于测量跨越多个区域的衬底（19）的温度的高温计（405），以及至少一个用于测量所述衬底（19）的实际辐射率的辐射计（410）。在另一个实施例中，辐射加热系统（313）设置在基板支撑件（16）的下方。基板（19）的温度由来自高温计（405）和发射计（410）的高温测量数据获得。

5. 发明申请

WO2007040916A2 APPARATUS TEMPERATURE CONTROL AND PATTERN COMPENSATION 审中-公开
标题翻译：装置温度控制和图案补偿
公开(公告)号：WO2007040916A2
公开(公告)日：2007-04-12
申请号：PCT/US2006035263
申请日：2006-09-11
申请人： APPLIED MATERIALS INC , CHACIN JUAN , HUNTER AARON , METZNER CRAIG , ANDERSON ROGER N
发明人： CHACIN JUAN , HUNTER AARON , METZNER CRAIG , ANDERSON ROGER N
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/481 , C23C16/52
摘要： A film formation system includes a processing chamber bounded by sidewalls and a top cover. In one embodiment, a susceptor is rotatably disposed in the system, and overlaps with a first peripheral member disposed around the sidewalls. A radiant heating system is disposed under the susceptor to heat the substrate. In another embodiment, the top cover has equally spaced pyrometers for measuring the temperature of the substrate across a number of zones. The temperature of the substrate is obtained from pyrometric data from the pyrometers.
摘要翻译：成膜系统包括由侧壁和顶盖限定的处理室。在一个实施例中，基座可旋转地设置在系统中，并与设置在侧壁周围的第一周边构件重叠。辐射加热系统设置在基座下方以加热基板。在另一个实施例中，顶盖具有相等间隔的高温计，用于测量跨越多个区域的基底的温度。底物的温度由高温计的高温计数据得到。

6. 发明申请

WO2007087537A2 SYSTEM AND METHOD FOR GRADING ELECTRICITY DISTRIBUTION NETWORK FEEDERS SUSCEPTIBLE TO IMPENDING FAILURE 审中-公开
标题翻译：电力分配网络供应商的分级系统和方法不利于发生故障
公开(公告)号：WO2007087537A2
公开(公告)日：2007-08-02
申请号：PCT/US2007060926
申请日：2007-01-23
申请人： UNIV COLUMBIA , CONEDISON INC , ANDERSON ROGER N , BOULANGER ALBERT , WALTZ DAVID L , LONG PHIL
发明人： ANDERSON ROGER N , BOULANGER ALBERT , WALTZ DAVID L , LONG PHIL
IPC分类号： H04N7/173
CPC分类号： G06N99/005
摘要： A machine learning system creates failure-susceptibility rankings for feeder cables in a utility's electrical distribution system. The machine learning system employs martingale boosting algorithms and Support Vector Machine (SVM) algorithms to generate a feeder failure prediction model, which is trained on static and dynamic feeder attribute data. Feeders are dynamically ranked by failure susceptibility and the rankings displayed to utility operators and engineers so that they can proactively service the distribution system to prevent local power outages. The feeder rankings may be used to redirect power flows and to prioritize repairs. A feedback loop is established to evaluate the responses of the electrical distribution system to field actions taken to optimize preventive maintenance programs.
摘要翻译：机器学习系统为公用事业的配电系统中的馈线电缆创建故障敏感性排名。机器学习系统采用mart升级算法和支持向量机（SVM）算法生成馈线故障预测模型，对静态和动态馈线属性数据进行了培训。馈线由故障敏感性和对公用事业运营商和工程师的排名进行动态排名，以便他们可以主动为服务分配系统，以防止局部停电。馈线排名可用于重定向电力流量并优先进行维修。建立了一个反馈回路，以评估配电系统对优化预防性维护计划所采取的现场行动的响应。

7. 发明申请

WO0223599A9 BI-DIRECTIONAL PROCESSING CHAMBER AND METHOD FOR BI-DIRECTIONAL PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：双向加工室和半导体基板双向加工方法
公开(公告)号：WO0223599A9
公开(公告)日：2003-05-15
申请号：PCT/US0142179
申请日：2001-09-11
申请人： APPLIED MATERIALS INC
发明人： RILEY NORMA B , ANDERSON ROGER N , IMPER GRANT D , COMITA PAUL
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00
CPC分类号： C23C16/45502 , C23C16/455 , H01L21/67069
摘要： A semiconductor substrate processing chamber (200) provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions (230, 240) provided at opposite ends of a processing chamber. Inlet (250, 270) and outlet (280, 260) ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.
摘要翻译：半导体衬底处理室（200）提供用于沉积或蚀刻工艺的双向工艺气流。双向气流提供沉积层厚度的均匀性或蚀刻的均匀性，而不需要旋转衬底。设置在处理室的相对端的连接（230,240）。每个连接处都设有入口（250,270）和出口（280,260）。相对接合处的入口和出口协作，以在第一方向上提供气流，用于处理循环的一半，并且在处理循环的另外一半的第二方向。

8. 发明申请

WO9957751A3 METHOD AND APPARATUS FOR CONTROLLING THE RADIAL TEMPERATURE GRADIENT OF A WAFER WHILE RAMPING THE WAFER TEMPERATURE 审中-公开
标题翻译：用于控制波浪辐射温度梯度温度梯度的方法和装置
公开(公告)号：WO9957751A3
公开(公告)日：2000-04-06
申请号：PCT/US9907990
申请日：1999-04-12
申请人： APPLIED MATERIALS INC
发明人： ANDERSON ROGER N , CARLSON DAVID K
IPC分类号： H01L21/205 , H01L21/00 , H01L21/26 , A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A method and apparatus for controlling the radial temperature gradients of a wafer (106) and a susceptor (102) while ramping the temperature of the wafer and susceptor using a first heat source (112) that is primarily directed at a central portion of the wafer, a second heat source (116) that is primarily directed at an outer portion of the wafer, a third heat source (122) that is primarily directed at a central portion of the susceptor, and a fourth heat source (126) that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.
摘要翻译：一种用于控制晶片（106）和基座（102）的径向温度梯度的方法和装置，同时使用主要针对晶片的中心部分的第一热源（112）来斜升晶片和基座的温度，主要指向晶片外部的第二热源（116），主要指向所述基座的中心部分的第三热源（122）和主要位于所述基座的中心部分的第四热源（126）指向基座的外部。通过向第一，第二，第三和第四热源施加电力来实现晶片和基座温度的斜坡化。在斜坡期间，第一和第二热源功率的比率作为晶片温度的函数而变化，并且第三和第四热源功率的比值作为基座温度的函数而变化。

9. 发明申请

WO0223109A9 LAMP ARRAY FOR THERMAL PROCESSING CHAMBER 审中-公开
标题翻译：用于热处理室的灯阵列
公开(公告)号：WO0223109A9
公开(公告)日：2003-05-15
申请号：PCT/US0142178
申请日：2001-09-11
申请人： APPLIED MATERIALS INC
发明人： DEACON THOMAS E , ANDERSON ROGER N , CARLSON DAVID K , COMITA PAUL
IPC分类号： H01L21/00 , H05B3/00 , F27B5/14
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A lamp array (12) for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array (202). The plurality of lamps can be arranged in one or more concentric rings (440) to form a generally circular array (202). Additional lamp arrays (632) can be provided adjacent the circumference of the circular pattern. At least one row of lamps (734) can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular chamber.
摘要翻译：一种用于热处理室的灯阵列（12）。灯阵列包括以大致圆形阵列（202）布置的多个灯。多个灯可以布置在一个或多个同心环（440）中以形成大致圆形的阵列（202）。可以在圆形图案的圆周附近提供附加的灯阵列（632）。至少一排灯（734）可以与灯阵列的圆形部分相切地提供，以在矩形室的流动方向上提供处理气体的预热或后加热。

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