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1. 发明申请

WO2008005892A3 NANOCRYSTAL FORMATION 审中-公开
标题翻译：纳米结构
公开(公告)号：WO2008005892A3
公开(公告)日：2008-12-18
申请号：PCT/US2007072577
申请日：2007-06-29
申请人： APPLIED MATERIALS INC , KRISHNA NETY M , HOFMANN RALF , SINGH KAUSHAL K , ARMSTRONG KARL J
发明人： KRISHNA NETY M , HOFMANN RALF , SINGH KAUSHAL K , ARMSTRONG KARL J
IPC分类号： H01L21/28 , H01L29/76
CPC分类号： H01L21/28273 , H01L29/42332 , H01L29/7881
摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5OE012 cm-2, preferably, at least about 8OE012 cm-2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
摘要翻译：在一个实施例中，提供了一种在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于后处理工艺，形成金属纳米晶体并在所述金属纳米晶层上形成介电覆盖层。该方法进一步提供形成金属纳米晶层，其纳米晶密度为至少约50E012cm -2，优选为至少约80O12 cm -2。在一个实例中，金属纳米晶层包含铂，钌或镍。在另一个实施例中，提供了一种在衬底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶层上的中间介电层。一些示例包括10,50,100,200或更多的双层。

2. 发明申请

WO2010144551A2 CARBON NANOTUBE-BASED SOLAR CELLS 审中-公开
标题翻译：基于碳纳米管的太阳能电池
公开(公告)号：WO2010144551A2
公开(公告)日：2010-12-16
申请号：PCT/US2010037937
申请日：2010-06-09
申请人： APPLIED MATERIALS INC , NALAMASU OMKARAM , GAY CHARLES , PUSHPARAJ VICTOR L , SINGH KAUSHAL K , VISSER ROBERT J , FOAD MAJEED A , HOFMANN RALF
发明人： NALAMASU OMKARAM , GAY CHARLES , PUSHPARAJ VICTOR L , SINGH KAUSHAL K , VISSER ROBERT J , FOAD MAJEED A , HOFMANN RALF
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , B82Y10/00 , H01L31/0322 , H01L31/03529 , H01L31/0384 , H01L31/0749 , H01L51/0048 , H01L51/4213 , Y02E10/541 , Y02P70/521
摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
摘要翻译：太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光活性太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

3. 发明申请

WO2007131040A3 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM 审中-公开
标题翻译：用于电子薄膜原子层沉积的化学品的激光的方法和装置
公开(公告)号：WO2007131040A3
公开(公告)日：2008-01-10
申请号：PCT/US2007068043
申请日：2007-05-02
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , MAHAJANI MAITREYEE , GHANAYEM STEVE G , YUDOVSKY JOSEPH , MCDOUGALL BRENDAN
发明人： SINGH KAUSHAL K , MAHAJANI MAITREYEE , GHANAYEM STEVE G , YUDOVSKY JOSEPH , MCDOUGALL BRENDAN
IPC分类号： H01L21/31 , C30B23/00
CPC分类号： H05H1/24 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/4405 , C23C16/45504 , C23C16/45508 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/482 , C23C16/509 , H01J37/32009
摘要： The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
摘要翻译：本发明通常提供一种用于沉积材料的方法，更具体地说，本发明的实施方案涉及利用光激发技术沉积阻挡层，种子层，导电材料和电介质材料的化学气相沉积方法和原子层沉积方法。本发明的实施方案通常提供了辅助方法和装置的方法，其中可以进行辅助过程以提供均匀沉积的材料。

4. 发明申请

WO2011143449A3 METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS USING EPITAXIAL DEPOSITION 审中-公开
标题翻译：使用外延沉积法制造晶体硅太阳能电池的方法
公开(公告)号：WO2011143449A3
公开(公告)日：2012-04-05
申请号：PCT/US2011036279
申请日：2011-05-12
申请人： APPLIED MATERIALS INC , GEE JAMES M , GAY CHARLES , PATIBANDLA NAG B , NALAMASU OMKARAM , SINGH KAUSHAL K
发明人： GEE JAMES M , GAY CHARLES , PATIBANDLA NAG B , NALAMASU OMKARAM , SINGH KAUSHAL K
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.
摘要翻译：本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

5. 发明申请

WO2011050291A3 MATERIALS AND DEVICE STACK FOR MARKET VIABLE ELECTROCHROMIC DEVICES 审中-公开
标题翻译：适用于市场可变电致变色器件的材料和器件堆叠
公开(公告)号：WO2011050291A3
公开(公告)日：2011-08-18
申请号：PCT/US2010053802
申请日：2010-10-22
申请人： APPLIED MATERIALS INC , KWAK BYUNG SUNG LEO , SINGH KAUSHAL K , GORDON JOSEPH G II , NALAMASU OMKARAM
发明人： KWAK BYUNG SUNG LEO , SINGH KAUSHAL K , GORDON JOSEPH G II , NALAMASU OMKARAM
IPC分类号： C23C14/34 , C23C14/08 , C23C14/50 , C23C14/56
CPC分类号： G02F1/1523 , C23C14/08 , C23C14/34 , G02F1/1525 , G02F2202/06 , Y10S359/90
摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.
摘要翻译：本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW）及其制造。 EC器件可以包括透明衬底; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在掺杂阳极层中提供增加的导电性; 和第二透明导电层。制造电致变色器件的方法可以包括顺序地在衬底上沉积第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层，其中至少一个使用组合等离子体沉积工艺溅射沉积电解质层和掺杂阳极层。

6. 发明申请

WO2011046664A3 A BARRIER LAYER DISPOSED BETWEEN A SUBSTRATE AND A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：用于薄膜硅太阳电池的衬底和透明导电氧化物层之间的阻挡层
公开(公告)号：WO2011046664A3
公开(公告)日：2011-06-09
申请号：PCT/US2010044126
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , PINGALY DEEPAK , SHRAUTI SURESH
发明人： SINGH KAUSHAL K , PINGALY DEEPAK , SHRAUTI SURESH
IPC分类号： H01L31/0216 , H01L31/042 , H01L31/075
CPC分类号： H01L31/1884 , H01L31/03921 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a barrier layer disposed on a substrate, a TCO layer disposed on the barrier layer, and a p-i-n junction cell formed on the TCO layer. In another embodiment, a method for forming a photovoltaic device includes providing a substrate having a surface, forming a barrier layer on the surface of the substrate, forming a TCO layer on a top surface of the barrier layer, and forming a p-i-n junction cell on the TCO layer
摘要翻译：提供了一种用于形成太阳能电池的方法和设备。在一个实施例中，光伏器件包括设置在衬底上的阻挡层，设置在阻挡层上的TCO层和形成在TCO层上的p-i-n结电池。在另一个实施例中，用于形成光伏器件的方法包括提供具有表面的衬底，在衬底的表面上形成阻挡层，在阻挡层的顶表面上形成TCO层，以及在衬底上形成pin结单元 TCO层

7. 发明申请

WO2012044978A3 HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER 审中-公开
标题翻译：高效率太阳能电池组件，具有阿塞拜疆吸收层
公开(公告)号：WO2012044978A3
公开(公告)日：2012-06-21
申请号：PCT/US2011054301
申请日：2011-09-30
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , VISSER ROBERT JAN , RAO SRIKANT , KUMAR BHASKAR , CARMALT CLAIRE J , ARNEPALLI RANGA RAO , NALAMASU OMKARAM , SARAF GAURAV , BLACKMAN CHRISTOPHER S , SATHASIVAM SANJAYAN
发明人： SINGH KAUSHAL K , VISSER ROBERT JAN , RAO SRIKANT , KUMAR BHASKAR , CARMALT CLAIRE J , ARNEPALLI RANGA RAO , NALAMASU OMKARAM , SARAF GAURAV , BLACKMAN CHRISTOPHER S , SATHASIVAM SANJAYAN
IPC分类号： H01L31/042 , H01L31/06 , H01L31/18
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
摘要翻译：本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层在GaAs基层上掺杂的掺杂剂的类型。

8. 发明申请

WO2012044980A2 GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS 审中-公开
标题翻译：用于薄膜晶体管应用的砷化镓基材料
公开(公告)号：WO2012044980A2
公开(公告)日：2012-04-05
申请号：PCT/US2011054306
申请日：2011-09-30
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , VISSER ROBERT JAN , KUMAR BHASKAR
发明人： SINGH KAUSHAL K , VISSER ROBERT JAN , KUMAR BHASKAR
IPC分类号： H01L29/786 , G02F1/136 , H01L21/336
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.
摘要翻译：本发明的实施例提供了一种形成在薄膜晶体管器件中使用的III-V族材料的方法。在一个实施例中，在薄膜晶体管器件中可以使用由基于溶液的前体形成的具有或不具有掺杂剂的基于砷化镓（GaAs）层。由基于溶液的前体形成的基于砷化镓（GaAs）层可以并入薄膜晶体管器件中以改善器件性能和器件速度。在一个实施例中，薄膜晶体管结构包括设置在衬底上的栅极绝缘层，设置在栅极绝缘层上的GaAs基层以及设置在GaAs基层附近的源极 - 漏极金属电极层。

9. 发明申请

WO2010118149A3 SULFURIZATION OR SELENIZATION IN MOLTEN (LIQUID) STATE FOR THE PHOTOVOLTAIC APPLICATIONS 审中-公开
标题翻译：用于光伏应用的液体（液体）状态的硫化或放电
公开(公告)号：WO2010118149A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030262
申请日：2010-04-07
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , HOFMANN RALF , KRISHNA NETY M
发明人： SINGH KAUSHAL K , HOFMANN RALF , KRISHNA NETY M
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L21/02568 , C23C14/025 , C23C14/165 , C23C14/185 , C23C14/5866 , H01L21/02551 , H01L21/02565 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the "II/VI" variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.
摘要翻译：提供一种形成包含化合物半导体的太阳能电池的方法。化合物半导体通常为“II / VI”，并且通过在气相沉积工艺中沉积一个或多个II族元素，然后使沉积层与VI族元素的液槽接触而形成。液体浴可以包含纯元素或元素的混合物。接触在非反应性气氛或真空下进行，并且任何逸出的蒸气可能被冷阱捕获并再循环。可以随后将基材退火以除去任何过量的可以类似地再循环的VI族元素。

10. 发明申请

WO2007002040A3 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 审中-公开
标题翻译：曝光沉积过程中形成含硅材料的方法
公开(公告)号：WO2007002040A3
公开(公告)日：2009-03-19
申请号：PCT/US2006023915
申请日：2006-06-20
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
发明人： SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
IPC分类号： H01L21/318 , H01L21/469
CPC分类号： H01L21/3185 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52
摘要： Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要翻译：本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜的方法。膜沉积在衬底上并且包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。光致激发过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

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