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1. 发明申请

WO2008157068A2 OXYGEN SACVD TO FORM SACRIFICIAL OXIDE LINERS IN SUBSTRATE GAPS 审中-公开
标题翻译：氧气SACVD在基板中形成氧化亚锡衬里
公开(公告)号：WO2008157068A2
公开(公告)日：2008-12-24
申请号：PCT/US2008/065971
申请日：2008-06-05
申请人： APPLIED MATERIALS, INC. , ZHENG, Yi , KWESKIN, Sasha, J. , SAPRE, Kedar , INGLE, Nitin, K. , YUAN, Zheng
发明人： ZHENG, Yi , KWESKIN, Sasha, J. , SAPRE, Kedar , INGLE, Nitin, K. , YUAN, Zheng
IPC分类号： H01L21/311
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/28132 , H01L21/3086 , H01L21/3088 , H01L21/3146 , H01L21/31604
摘要： A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate.
摘要翻译：描述了形成和去除牺牲氧化物层的方法。该方法包括在衬底上形成台阶，其中台阶具有顶部和侧壁。该方法还可以包括通过分子氧和TEOS的化学气相沉积在步骤周围形成牺牲氧化物层，其中氧化物层形成在台阶的顶部和侧壁上。该方法还可以包括去除氧化物层的顶部和步骤; 通过去除步骤去除暴露的基板的一部分以形成蚀刻的基板; 并从蚀刻的衬底去除整个牺牲氧化物层。

2. 发明申请

WO2007140424A2 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：WO2007140424A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069999
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
发明人： INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。该方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，并将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

3. 发明申请

WO2005064651A3 IMPROVED GAP-FILL TECHNIQUES 审中-公开
公开(公告)号：WO2005064651A3
公开(公告)日：2005-07-14
申请号：PCT/US2004/043698
申请日：2004-12-21
申请人： APPLIED MATERIALS, INC. , MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
发明人： MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
IPC分类号： H01L21/762
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

4. 发明申请

WO2010011476A2 DEPOSITION METHODS AND RELEASING STRESS BUILDUP 审中-公开
标题翻译：沉积方法和释放应力的构建
公开(公告)号：WO2010011476A2
公开(公告)日：2010-01-28
申请号：PCT/US2009/049300
申请日：2009-06-30
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin, K. , YUAN, Zheng , MININNI, Rossella
发明人： TANG, Jing , INGLE, Nitin, K. , YUAN, Zheng , MININNI, Rossella
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/76224
摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.
摘要翻译：提供了一种用于利用电介质材料释放半导体衬底上的特征应力累积的沉积方法。该功能包括由间隙分隔的行。该方法包括在腔室中的半导体衬底上的特征结构上形成衬垫层。释放特征上的内衬层的应力以基本上减少特征的线的弯曲。电介质膜沉积在应力释放衬垫层上以基本上填充特征的间隙。

5. 发明申请

WO2007118196A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：WO2007118196A1
公开(公告)日：2007-10-18
申请号：PCT/US2007/066149
申请日：2007-04-06
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , YUAN, Zheng , BANTHIA, Vikash , XIA, Xinyun , FORSTNER, Hali, J. L. , PAN, Rong
发明人： INGLE, Nitin, K. , YUAN, Zheng , BANTHIA, Vikash , XIA, Xinyun , FORSTNER, Hali, J. L. , PAN, Rong
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L21/67115
摘要： A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800°C or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800°C to about 1400°C in a second atmosphere lacking oxygen.
摘要翻译：一种退火衬底的方法，该衬底具有包含形成在介电材料和衬底之间的氮化硅层上的电介质材料的沟槽，其中该方法包括在第一气氛中在约800℃或更高的第一温度下退火衬底包含含氧气体，并在第二气氛中在约800℃至约1400℃的第二温度下在不含氧气的条件下退火该衬底。

6. 发明申请

WO2005071740A2 LIMITED THERMAL BUDGET FORMATION OF PMD LAYERS 审中-公开
标题翻译：有限公司预计形成PMD层
公开(公告)号：WO2005071740A2
公开(公告)日：2005-08-04
申请号：PCT/US2005/000728
申请日：2005-01-10
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
发明人： YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
IPC分类号： H01L21/768
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap which is defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate, providing a flow of an oxidizing processing gas to the chamber, and providing a flow of a phosphorous-containing processing gas to the chamber. The method also includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas, the phosphorous-containing processing gas, and the oxidizing processing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500°C throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°C throughout deposition of the bulk layer.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底的腔室，提供氧化处理气体到腔室的流动，并提供流动的含磷处理气体。该方法还包括通过使含硅处理气体，含磷处理气体和氧化处理气体之间的反应在间隙中沉积作为基本保形层的P掺杂氧化硅膜的第一部分。沉积保形层包括随着时间的推移，在沉积保形层的过程中（含硅处理气体加上含磷处理气体）：氧化处理气体）和将基板的温度保持在约500℃以下。该方法还包括沉积作为体层的P掺杂氧化硅膜的第二部分。沉积薄膜的第二部分包括在沉积本体层期间保持（含硅处理气体加含磷处理气体）:(氧化处理气体）的比例基本上恒定，并将基板的温度维持在约500℃以下在整个沉积层中。

7. 发明申请

WO2011011301A2 A MIXED SILICON PHASE FILM FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：用于高效薄膜硅太阳电池的混合硅相薄膜
公开(公告)号：WO2011011301A2
公开(公告)日：2011-01-27
申请号：PCT/US2010/042392
申请日：2010-07-19
申请人： APPLIED MATERIALS, INC. , YANG, Fan , ZHANG, Lin , ZHENG, Yi , SCHMITT, Francimar , YUAN, Zheng
发明人： YANG, Fan , ZHANG, Lin , ZHENG, Yi , SCHMITT, Francimar , YUAN, Zheng
IPC分类号： H01L31/075
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.
摘要翻译：提供了一种用于形成太阳能电池的方法和设备。在一个实施例中，光伏器件包括形成在衬底上的第一pin结电池，其中pin结电池包括p型含硅层，形成在p型含硅层上的本征型含硅层和在本征型含硅层上形成的n型含硅层，其中本征型含硅层包含第一对微晶层和非晶硅层。

8. 发明申请

WO2011084381A2 CLEANING OPTIMIZATION OF PECVD SOLAR FILMS 审中-公开
标题翻译： PECVD太阳能膜的清洁优化
公开(公告)号：WO2011084381A2
公开(公告)日：2011-07-14
申请号：PCT/US2010/060107
申请日：2010-12-13
申请人： APPLIED MATERIALS, INC. , SCHMITT, Francimar, C. , YUAN, Zheng , ZHENG, Yi , YANG, Fan , LI, Lipan
发明人： SCHMITT, Francimar, C. , YUAN, Zheng , ZHENG, Yi , YANG, Fan , LI, Lipan
IPC分类号： H01L31/042 , H01L31/18 , H01L21/302
CPC分类号： H01L31/03921 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1816 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.
摘要翻译：本发明的实施方案通常提供在基板处理室中形成多个薄膜单结或多结太阳能电池的方法。在一个实施例中，一种用于处理多个薄膜太阳能电池基板的方法包括在单个处理室中顺序地在第一基板和室部件的表面上沉积第一未掺杂层和第一掺杂层，去除具有去除来自处理室的掺杂和未掺杂的层，去除沉积在室组件上的第二掺杂层，以暴露下面的第一未掺杂层，其用作待处理室中待处理的第二衬底的调味层，以及顺序地沉积第二未掺杂层以及处理室中的第二衬底上的第二掺杂层。在一个示例中，第一未掺杂层是非晶硅或微晶硅。可以以期望的间隔进行全部清洁处理，以在常规调味过程之前暴露室部件的表面，并且随后在处理室中进行沉积。

9. 发明申请

WO2011028349A3 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
公开(公告)号：WO2011028349A3
公开(公告)日：2011-03-10
申请号：PCT/US2010/044133
申请日：2010-08-02
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , PANDIT, Mandar B. , SCHMITT, Francimar C. , ZHENG, Yi , YANG, Fan , LI, Lipan , TSO, Alan , HO, Dustin W. , CHO, Tom K. , THAKUR, Randhir
发明人： YUAN, Zheng , PANDIT, Mandar B. , SCHMITT, Francimar C. , ZHENG, Yi , YANG, Fan , LI, Lipan , TSO, Alan , HO, Dustin W. , CHO, Tom K. , THAKUR, Randhir
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm 2 to the processing chamber, and forming a silicon containing layer on the substrate.

10. 发明申请

WO2005033361A1 GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：气体分配淋浴
公开(公告)号：WO2005033361A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/031424
申请日：2004-09-24
申请人： APPLIED MATERIALS, INC. , JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
发明人： JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/45565
摘要： A gas distribution showerhead (1501) is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings (y). In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet (1501a) to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.
摘要翻译：气体分配喷头（1501）被设计成允许在宽范围的淋浴头到晶片间隔（y）上沉积均匀的厚膜。根据本发明的一个实施例，面板的孔口入口（1501a）的数量，宽度和/或深度减小，以增加流动阻力，从而提高面板上游的压力。这种升高的上游气体流量压力又降低了通过喷头的中心部分相对于边缘部分流动的气体的速度变化，从而确保沉积在晶片的边缘或中心部分上的膜的厚度均匀。

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