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1. 发明申请

WO2013155436A1 METHODS FOR DEPOSITING MANGANESE AND MANGANESE NITRIDES 审中-公开
标题翻译：用于沉积锰和锰的方法
公开(公告)号：WO2013155436A1
公开(公告)日：2013-10-17
申请号：PCT/US2013/036407
申请日：2013-04-12
申请人： APPLIED MATERIALS, INC. , TANG, Jing , LI, Zhefeng , MA, Paul F. , THOMPSON, David
发明人： TANG, Jing , LI, Zhefeng , MA, Paul F. , THOMPSON, David
IPC分类号： H01L21/318 , H01L21/205
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese- containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.
摘要翻译：描述的是含锰膜，以及提供含锰膜的方法。具有Co，Mn，Ru，Ta，Al，Mg，Cr，Nb，Ti或V的掺杂含锰膜允许含锰膜的铜屏障性能提高。还描述了提供具有包含硅酸锰的第一层和包含含锰膜的第二层的膜的方法。

2. 发明申请

WO2012095696A3 TEXT SEGMENTATION WITH MULTIPLE GRANULARITY LEVELS 审中-公开
标题翻译：具有多个粒度级别的文本分段
公开(公告)号：WO2012095696A3
公开(公告)日：2012-11-08
申请号：PCT/IB2011003364
申请日：2011-11-18
申请人： ALIBABA GROUP HOLDING LTD , SUN JIAN , HOU LEI , TANG JING MING , CHU MIN , LIAO XIAO LING , XU BING JING , PENG REN GONG , YANG YANG
发明人： SUN JIAN , HOU LEI , TANG JING MING , CHU MIN , LIAO XIAO LING , XU BING JING , PENG REN GONG , YANG YANG
IPC分类号： G06F17/27 , G06F17/21
CPC分类号： G06F17/2863 , G06F17/271 , G06F17/277 , G06F17/2785 , G06F17/28
摘要： Text processing includes: segmenting received text based on a lexicon of smallest semantic units to obtain medium-grained segmentation results; merging the medium-grained segmentation results to obtain coarse-grained segmentation results, the coarse-grained segmentation results having coarser granularity than the medium-grained segmentation results; looking up in the lexicon of smallest semantic units respective search elements that correspond to segments in the medium-grained segmentation results; and forming fine-grained segmentation results based on the respective search elements, the fine-grained segmentation results having finer granularity than the medium-grained segmentation results.
摘要翻译：文本处理包括：基于最小语义单元的词典对接收到的文本进行分段，以获得中粒度分割结果; 合并中粒度分割结果以获得粗粒度分割结果，粗粒度分割结果具有比中粒度分割结果更粗糙的粒度; 在最小语义单元的词典中查找与中粒度分割结果中的段对应的相应搜索元素; 并且基于相应的搜索元素形成细粒度分割结果，细粒度分割结果具有比中粒度分割结果更精细的粒度。

3. 发明申请

WO2012040362A3 SYSTEMS AND METHODS FOR ANALYSIS AND TREATMENT OF A BODY LUMEN 审中-公开
标题翻译：用于分析和治疗体液的系统和方法
公开(公告)号：WO2012040362A3
公开(公告)日：2012-06-14
申请号：PCT/US2011052609
申请日：2011-09-21
申请人： CORNOVA INC , RYAN S ERIC , TANG JING , GAMBALE RICHARD
发明人： RYAN S ERIC , TANG JING , GAMBALE RICHARD
IPC分类号： A61B1/00 , A61B5/027 , G01J3/00
CPC分类号： A61B5/0086 , A61B5/0062 , A61B5/0075 , A61B5/0084 , A61B5/02007 , A61B5/1076 , A61B5/4836 , A61B5/6853 , A61M25/104 , G01J3/0218 , G01J3/0264 , G01J3/42
摘要： A system is provided for probing a body lumen that includes a flexible conduit that is elongated along a longitudinal axis, the flexible conduit having a proximal end and a distal end, at least one delivery waveguide and at least one collection waveguide extending along the flexible conduit, a transmission output of the at least one delivery waveguide and a transmission input of the at least one collection waveguide located along a distal portion of the conduit. A spectrometer is connected to the at least one delivery waveguide and the at least one collection waveguide, the spectrometer configured to perform spectroscopy. A controller system is configured to calculate a distance between the flexible conduit and the wall of the body lumen based on a spectroscopic measurement of the at least one primary radiation signal that traveled between the flexible conduit and body lumen.
摘要翻译：提供了一种用于探测体腔的系统，所述体腔包括沿着纵向轴线伸长的柔性导管，所述柔性导管具有近端和远端，至少一个输送波导和至少一个收集波导，所述收集波导沿着柔性导管，所述至少一个传送波导的传输输出和沿着所述导管的远端部分定位的所述至少一个收集波导的传输输入。分光计连接到至少一个传送波导和至少一个收集波导，分光计配置成执行光谱分析。控制器系统被配置为基于在柔性导管和体腔之间行进的至少一个初级辐射信号的光谱测量来计算柔性导管和体腔的壁之间的距离。

4. 发明申请

WO2011112802A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112802A3
公开(公告)日：2012-01-05
申请号：PCT/US2011027881
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
IPC分类号： H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

5. 发明申请

WO2011139435A2 HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE 审中-公开
标题翻译：具有减少后固化残留物的高温选择性干燥剂
公开(公告)号：WO2011139435A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/030582
申请日：2011-03-30
申请人： APPLIED MATERIALS, INC. , THADANI, Kiran V. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
发明人： THADANI, Kiran V. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357
摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
摘要翻译：描述了干法蚀刻含硅介电膜的方法。这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。部分或完全避免固体残余物的积累增加了蚀刻速率。

6. 发明申请

WO2011115761A2 INVERTABLE PATTERN LOADING WITH DRY ETCH 审中-公开
标题翻译：无法模式加载干燥刻蚀
公开(公告)号：WO2011115761A2
公开(公告)日：2011-09-22
申请号：PCT/US2011/027221
申请日：2011-03-04
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin , YANG, Dongqing , VENKATARAMAN, Shankar
发明人： TANG, Jing , INGLE, Nitin , YANG, Dongqing , VENKATARAMAN, Shankar
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开口区域）蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻更进一步。该方法包括两个干法蚀刻循环。第一次干蚀刻循环涉及低强度或缩短的升华步骤，在狭窄的沟槽中留下固体残余物。剩余的固体残余物在第二干法蚀刻循环期间抑制了窄沟槽中的蚀刻进程，从而允许宽沟槽中的蚀刻超过了窄沟槽中的蚀刻。

7. 发明申请

WO2011087580A1 SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS 审中-公开
标题翻译：用于含硅片的SMOOTH SICONI蚀刻
公开(公告)号：WO2011087580A1
公开(公告)日：2011-07-21
申请号：PCT/US2010/057676
申请日：2010-11-22
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
发明人： TANG, Jing , INGLE, Nitin , YANG, Dongqing
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.
摘要翻译：描述了蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有更大或更小的氢流量比的SiConiTM蚀刻。已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率的差异。降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConiTM。单独或组合的这些方法中的每一种用于通过限制固体残余物颗粒尺寸来减少蚀刻表面的粗糙度。

8. 发明申请

WO2010082929A1 MEMRISTOR WITH NANOSTRUCTURE ELECTRODES 审中-公开
标题翻译：具有纳米结构电极的电容器
公开(公告)号：WO2010082929A1
公开(公告)日：2010-07-22
申请号：PCT/US2009/031144
申请日：2009-01-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P , XIA, Qiangfei , TANG, Jing
发明人： XIA, Qiangfei , TANG, Jing
IPC分类号： H01L21/8239 , H01L21/8247 , H01L27/115
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C2213/33 , G11C2213/77 , G11C2213/81 , H01L27/101 , H01L27/2472 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor having an active region includes a first electrode. The first electrode comprises a nanostructure formed of at least one metallic single walled nanotube. The memristor also includes a second electrode formed of at least one metallic single walled nanotube. The second electrode is positioned in a crossed relationship with respect to the first electrode. The memristor further includes a switching material positioned between the first electrode and the second electrode, in which the active region is configured to form in the switching material at a cross point of the first electrode and the second electrode.
摘要翻译：具有有源区的忆阻器包括第一电极。第一电极包括由至少一个金属单壁纳米管形成的纳米结构。忆阻器还包括由至少一个金属单壁纳米管形成的第二电极。第二电极相对于第一电极以交叉的关系定位。忆阻器还包括位于第一电极和第二电极之间的开关材料，其中有源区被配置为在开关材料中在第一电极和第二电极的交叉点处形成。

9. 发明申请

WO2010011476A4 DEPOSITION METHODS AND RELEASING STRESS BUILDUP 审中-公开
标题翻译：沉积方法和释放应力的构建
公开(公告)号：WO2010011476A4
公开(公告)日：2010-06-24
申请号：PCT/US2009049300
申请日：2009-06-30
申请人： APPLIED MATERIALS INC , TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
发明人： TANG JING , INGLE NITIN K , YUAN ZHENG , MININNI ROSSELLA
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/76224
摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.
摘要翻译：提供了一种用电介质材料在半导体衬底上释放特征应力累积的沉积方法。该功能包括由间隙分隔的行。该方法包括在腔室中的半导体衬底上的特征结构上形成衬垫层。释放特征上的内衬层的应力以基本上减少特征的线的弯曲。电介质膜沉积在应力释放衬垫层上以基本上填充特征的间隙。

10. 发明申请

WO2008051197A3 SMALL-MOLECULE BOTULINUM TOXIN INHIBITORS 审中-公开
标题翻译：小分子氧化铁抑制剂
公开(公告)号：WO2008051197A3
公开(公告)日：2009-04-09
申请号：PCT/US2006036710
申请日：2006-09-20
申请人： MAYO FOUNDATION , US GOV SEC ARMY , PANG YUAN-PING , MILLARD CHARLES B , PARK JEWN GIEW , TANG JING , SCHMIDT JAMES J
发明人： PANG YUAN-PING , MILLARD CHARLES B , PARK JEWN GIEW , TANG JING , SCHMIDT JAMES J
IPC分类号： A01N57/00 , A61K31/675
CPC分类号： A61K31/675
摘要： Small-molecule inhibitors of Botulinum toxin, including BoNTA, BoNTD and BoNTE are provided, as well as methods of using the inhibitors.
摘要翻译：提供了肉毒杆菌毒素的小分子抑制剂，包括BoNTA，BoNTD和BoNTE，以及使用抑制剂的方法。

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