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1. 发明申请

WO2005064651A3 IMPROVED GAP-FILL TECHNIQUES 审中-公开
公开(公告)号：WO2005064651A3
公开(公告)日：2005-07-14
申请号：PCT/US2004/043698
申请日：2004-12-21
申请人： APPLIED MATERIALS, INC. , MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
发明人： MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
IPC分类号： H01L21/762
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

2. 发明申请

WO2005071740A2 LIMITED THERMAL BUDGET FORMATION OF PMD LAYERS 审中-公开
标题翻译：有限公司预计形成PMD层
公开(公告)号：WO2005071740A2
公开(公告)日：2005-08-04
申请号：PCT/US2005/000728
申请日：2005-01-10
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
发明人： YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
IPC分类号： H01L21/768
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap which is defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate, providing a flow of an oxidizing processing gas to the chamber, and providing a flow of a phosphorous-containing processing gas to the chamber. The method also includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas, the phosphorous-containing processing gas, and the oxidizing processing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500°C throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°C throughout deposition of the bulk layer.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底的腔室，提供氧化处理气体到腔室的流动，并提供流动的含磷处理气体。该方法还包括通过使含硅处理气体，含磷处理气体和氧化处理气体之间的反应在间隙中沉积作为基本保形层的P掺杂氧化硅膜的第一部分。沉积保形层包括随着时间的推移，在沉积保形层的过程中（含硅处理气体加上含磷处理气体）：氧化处理气体）和将基板的温度保持在约500℃以下。该方法还包括沉积作为体层的P掺杂氧化硅膜的第二部分。沉积薄膜的第二部分包括在沉积本体层期间保持（含硅处理气体加含磷处理气体）:(氧化处理气体）的比例基本上恒定，并将基板的温度维持在约500℃以下在整个沉积层中。

3. 发明申请

WO2007118196A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：WO2007118196A1
公开(公告)日：2007-10-18
申请号：PCT/US2007/066149
申请日：2007-04-06
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , YUAN, Zheng , BANTHIA, Vikash , XIA, Xinyun , FORSTNER, Hali, J. L. , PAN, Rong
发明人： INGLE, Nitin, K. , YUAN, Zheng , BANTHIA, Vikash , XIA, Xinyun , FORSTNER, Hali, J. L. , PAN, Rong
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31612 , H01L21/67115
摘要： A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800°C or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800°C to about 1400°C in a second atmosphere lacking oxygen.
摘要翻译：一种退火衬底的方法，该衬底具有包含形成在介电材料和衬底之间的氮化硅层上的电介质材料的沟槽，其中该方法包括在第一气氛中在约800℃或更高的第一温度下退火衬底包含含氧气体，并在第二气氛中在约800℃至约1400℃的第二温度下在不含氧气的条件下退火该衬底。

4. 发明申请

WO2012015610A2 OXIDE-RICH LINER LAYER FOR FLOWABLE CVD GAPFILL 审中-公开
标题翻译：用于可流动化学气相沉积填充物的富氧衬层
公开(公告)号：WO2012015610A2
公开(公告)日：2012-02-02
申请号：PCT/US2011/044219
申请日：2011-07-15
申请人： APPLIED MATERIALS, INC. , LI, DongQing , LIANG, Jingmei , INGLE, Nitin, K.
发明人： LI, DongQing , LIANG, Jingmei , INGLE, Nitin, K.
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Formation of gap-filling silicon oxide layer with reduced volume fraction of voids is described. Deposition involves formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within same chamber as gapfill layer. Liner layer and gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). Liner layer has more oxygen content than gapfill layer and deposits more conformally. Deposition rate of the gapfill layer may be increased by the presence of the liner layer. Gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. Presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
摘要翻译：描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。沉积包括在缺氧的更易流动的间隙填充层之前形成富氧少流动性衬层。然而，衬垫层被沉积在与间隙填充层相同的腔室内。内衬层和间隙填充层都可以通过将自由基组分与未激发的含硅前体结合（即，不通过施加等离子体功率而直接激发）来形成。衬里层比填隙层具有更多的氧含量并且更保形地沉积。衬垫层的存在可能会增加间隙填充层的沉积速率。填隙层可以含有硅，氧和氮，并且可以在高温下转化以包含更多的氧和更少的氮。填充衬垫的存在提供了填充层下面的氧气来源，以增强在转换过程中引入的气相氧气。

5. 发明申请

WO2013012536A3 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 审中-公开
公开(公告)号：WO2013012536A3
公开(公告)日：2013-01-24
申请号：PCT/US2012/044679
申请日：2012-06-28
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/318 , H01L21/205
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

6. 发明申请

WO2011090626A2 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮/氢比生产自由基的介电膜生长
公开(公告)号：WO2011090626A2
公开(公告)日：2011-07-28
申请号：PCT/US2010/060852
申请日：2010-12-16
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述了形成电介质层的方法。该方法可以包括将含硅前体与自由基氮前体混合并在衬底上沉积电介质层的步骤。通过使氢气（H 2）和氮气（N 2）流入等离子体中以便调节氮/氢比率，在远程等离子体中形成自由基氮前体。介电层最初是含硅和氮的层，其可通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

7. 发明申请

WO2007140424A2 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：WO2007140424A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069999
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
发明人： INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。该方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，并将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

8. 发明申请

WO2010011476A2 DEPOSITION METHODS AND RELEASING STRESS BUILDUP 审中-公开
标题翻译：沉积方法和释放应力的构建
公开(公告)号：WO2010011476A2
公开(公告)日：2010-01-28
申请号：PCT/US2009/049300
申请日：2009-06-30
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin, K. , YUAN, Zheng , MININNI, Rossella
发明人： TANG, Jing , INGLE, Nitin, K. , YUAN, Zheng , MININNI, Rossella
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/76224
摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.
摘要翻译：提供了一种用于利用电介质材料释放半导体衬底上的特征应力累积的沉积方法。该功能包括由间隙分隔的行。该方法包括在腔室中的半导体衬底上的特征结构上形成衬垫层。释放特征上的内衬层的应力以基本上减少特征的线的弯曲。电介质膜沉积在应力释放衬垫层上以基本上填充特征的间隙。

9. 发明申请

WO2008157068A2 OXYGEN SACVD TO FORM SACRIFICIAL OXIDE LINERS IN SUBSTRATE GAPS 审中-公开
标题翻译：氧气SACVD在基板中形成氧化亚锡衬里
公开(公告)号：WO2008157068A2
公开(公告)日：2008-12-24
申请号：PCT/US2008/065971
申请日：2008-06-05
申请人： APPLIED MATERIALS, INC. , ZHENG, Yi , KWESKIN, Sasha, J. , SAPRE, Kedar , INGLE, Nitin, K. , YUAN, Zheng
发明人： ZHENG, Yi , KWESKIN, Sasha, J. , SAPRE, Kedar , INGLE, Nitin, K. , YUAN, Zheng
IPC分类号： H01L21/311
CPC分类号： H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/28132 , H01L21/3086 , H01L21/3088 , H01L21/3146 , H01L21/31604
摘要： A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate.
摘要翻译：描述了形成和去除牺牲氧化物层的方法。该方法包括在衬底上形成台阶，其中台阶具有顶部和侧壁。该方法还可以包括通过分子氧和TEOS的化学气相沉积在步骤周围形成牺牲氧化物层，其中氧化物层形成在台阶的顶部和侧壁上。该方法还可以包括去除氧化物层的顶部和步骤; 通过去除步骤去除暴露的基板的一部分以形成蚀刻的基板; 并从蚀刻的衬底去除整个牺牲氧化物层。

10. 发明申请

WO2013032638A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 审中-公开
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：WO2013032638A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/049768
申请日：2012-08-06
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性的固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

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