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1. 发明申请

WO2007102882A3 MULTIPLE ZONE SPUTTERING TARGET CREATED THROUGH CONDUCTIVE AND INSULATION BONDING 审中-公开
公开(公告)号：WO2007102882A3
公开(公告)日：2007-09-13
申请号：PCT/US2006/060069
申请日：2006-10-19
申请人： APPLIED MATERIALS, INC. , YE, Yan , WHITE, John M. , HOSOKAWA, Akihiro , LE, Hien-minh Huu , NISPEROS, Elpidio C. , STIMSON, Bradley O.
发明人： YE, Yan , WHITE, John M. , HOSOKAWA, Akihiro , LE, Hien-minh Huu , NISPEROS, Elpidio C. , STIMSON, Bradley O.
IPC分类号： C23C14/32
摘要： The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.

2. 发明申请

WO2007032855A2 THERMALLY CONDUCTIVE DIELECTRIC BONDING OF SPUTTERING TARGETS USING DIAMOND POWDER FILLER OR THERMALLY CONDUCTIVE CERAMIC FILLERS 审中-公开
标题翻译：使用钻石粉末填料或导热陶瓷填料的溅射靶材的导热导电粘接
公开(公告)号：WO2007032855A2
公开(公告)日：2007-03-22
申请号：PCT/US2006/031989
申请日：2006-08-15
申请人： APPLIED MATERIALS, INC. , YE, Yan , WHITE, John, M. , LE, Hien-Minh, Huu , HOSOKAWA, Akihiro , NISPEROS, Elpidio, C.
发明人： YE, Yan , WHITE, John, M. , LE, Hien-Minh, Huu , HOSOKAWA, Akihiro , NISPEROS, Elpidio, C.
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/352 , H01J37/3414 , H01J37/3435 , Y10T156/109
摘要： A sputtering target assembly and method for bonding a sputtering target to a backing plate is disclosed. When insulatively bonding a sputtering target to a backing plate, it is necessary to ensure that the bonding material has good thermal conductivity so that the temperature of the target can be effectively controlled. It is also important to not have electrical conductivity through the bonding materials. In order to achieve both goals, it is beneficial to utilize an elastomer with diamond powder filler. Diamond power has very good thermal conductivity, and it also has very good dielectric strength. Diamond is a thermally effective and cost effective substitute for silver in insulative bonding.
摘要翻译：公开了一种用于将溅射靶结合到背板的溅射靶组件和方法。当将溅射靶绝缘接合到背板时，需要确保接合材料具有良好的导热性，从而能够有效地控制靶的温度。通过接合材料不具有导电性也是重要的。为了实现这两个目标，使用具有金刚石粉末填料的弹性体是有益的。金刚石功率具有非常好的导热性，并且也具有非常好的介电强度。金刚石是绝缘粘合中银的热效应和成本效益的替代品。

3. 发明申请

WO2007032858A1 LARGE-AREA MAGNETRON SPUTTERING CHAMBER WITH INDIVIDUALLY CONTROLLED SPUTTERING ZONES 审中-公开
标题翻译：具有独立控制的喷射区的大面积磁控溅射室
公开(公告)号：WO2007032858A1
公开(公告)日：2007-03-22
申请号：PCT/US2006/032219
申请日：2006-08-17
申请人： APPLIED MATERIALS, INC. , YE, Yan , WHITE, John M. , HOSOKAWA, Akihiro , LE, Hien-Minh Huu
发明人： YE, Yan , WHITE, John M. , HOSOKAWA, Akihiro , LE, Hien-Minh Huu
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , H01J37/3408 , H01J37/3444
摘要： The present invention generally provides a method and an apparatus for processing a surface of a substrate in a PVD chamber (20) that has a sputtering target having separately biasable sections, regions or zones (127A1 127B) to improve deposition uniformity. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources (128A, 128B). In one aspect, each of the target sections are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the multizone target assembly has one or more ports that are adapted to deliver a processing gas to the processing region of the PVD chamber. In one aspect, the multizone target assembly has one or more magnetron assemblies positioned adjacent to one or more target sections.
摘要翻译：本发明总体上提供了一种用于处理PVD室（20）中的衬底表面的方法和装置，其中溅射靶具有分开的偏压部分，区域或区域（127A1 127B），以提高沉积均匀性。在一个方面，通过使用一个或多个DC或RF电源（128A，128B），多区域目标组件的每个目标部分被偏置在不同的阴极偏压。在一个方面，每个目标部分通过使用一个电源和一个或多个电阻，电容和/或电感元件而被偏置在不同的阴极偏压。在一个方面，多区域目标组件具有适于将处理气体输送到PVD室的处理区域的一个或多个端口。在一个方面，多区域目标组件具有邻近一个或多个目标区段定位的一个或多个磁控管组件。

4. 发明申请

WO2007118204A2 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：反应溅射氧化锌透明导电氧化物到大面积基板上
公开(公告)号：WO2007118204A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/066166
申请日：2007-04-06
申请人： APPLIED MATERIALS, INC. , LAU, Allen Ka-ling , INAGAWA, Makoto , STIMSON, Bradley, O. , HOSOKAWA, Akihiro , WHITE, John, M. , YE, Yan , KADAM, Ankur , LI, Yanping
发明人： LAU, Allen Ka-ling , INAGAWA, Makoto , STIMSON, Bradley, O. , HOSOKAWA, Akihiro , WHITE, John, M. , YE, Yan , KADAM, Ankur , LI, Yanping
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括遮蔽一个或多个气体引入管的一个或多个冷却阳极，其中冷却的阳极和气体引入管两者跨越限定在一个或多个溅射靶与一个或多个溅射靶之间的处理空间衬底在溅射室内。气体引入管可以具有气体出口，该气体出口引导从一个或多个基底引出的气体。气体引入管可以将反应性气体例如氧气引入溅射室中以通过反应性溅射来沉积TCO膜。在多步骤溅射过程中，可以改变气体流量（即气体量和气体种类），靶材与基材之间的间距以及DC功率，以达到所需的结果。

5. 发明申请

WO2010002803A2 TREATMENT OF GATE DIELECTRIC FOR MAKING HIGH PERFORMANCE METAL OXIDE AND METAL OXYNITRIDE THIN FILM TRANSISTORS 审中-公开
标题翻译：用于制造高性能金属氧化物和金属氧化物薄膜晶体管的门电介质的处理
公开(公告)号：WO2010002803A2
公开(公告)日：2010-01-07
申请号：PCT/US2009/049084
申请日：2009-06-29
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of treating the gate dielectric involves exposing the gate dielectric layer to N 2 O gas. Another method of treating the gate dielectric involves exposing the gate dielectric layer to N 2 O plasma. Silicon oxide, while not practical as a gate dielectric for silicon based TFTs, may also improve the threshold voltage when used in metal oxide TFTs. By treating the gate dielectric and/or using silicon oxide, the threshold voltage of TFTs may be improved.
摘要翻译：本发明的实施例通常包括TFT及其制造方法。 TFT中的栅极电介质层可能影响TFT的阈值电压。通过在沉积有源沟道材料之前处理栅介质层，可以提高阈值电压。处理栅极电介质的一种方法包括将栅极介电层暴露于N 2 O气体。处理栅极电介质的另一种方法包括将栅极介电层暴露于N 2 O等离子体。作为硅基TFT的栅极电介质虽然不实用，但是当用于金属氧化物TFT时也可以提高阈值电压。通过处理栅极电介质和/或使用氧化硅，可以提高TFT的阈值电压。

6. 发明申请

WO2009120552A2 INTEGRATED PROCESS SYSTEM AND PROCESS SEQUENCE FOR PRODUCTION OF THIN FILM TRANSISTOR ARRAYS USING DOPED OR COMPOUNDED METAL OXIDE SEMICONDUCTOR 审中-公开
标题翻译：集成工艺系统和使用掺杂或复合金属氧化物半导体生产薄膜晶体管阵列的工艺顺序
公开(公告)号：WO2009120552A2
公开(公告)日：2009-10-01
申请号：PCT/US2009/037520
申请日：2009-03-18
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/786 , H01L21/205
CPC分类号： H01L29/7869
摘要： The present invention generally relates to an integrated processing system and process sequence that may be used for thin film transistor (TFT) fabrication. In fabricating TFTs, numerous processes may be performed on a substrate to ultimately produce the desired TFT. These processes may be performed in numerous processing chambers that may be coupled to a common transfer chamber. The arrangement of the processing chambers and the sequence in which the substrate may pass through the processing chambers may affect the device performance. By placing specific processing chambers around a common transfer chamber, multiple processes may be performed without undue exposure of the TFT to atmosphere. Alternatively, by passing the substrate sequentially through specific processing chambers, multiple processes may be performed without undue exposure of the TFT to atmosphere.
摘要翻译：本发明一般涉及可用于薄膜晶体管（TFT）制造的集成处理系统和处理顺序。在制造TFT时，可以在衬底上执行许多工艺以最终产生所需的TFT。这些过程可以在可以耦合到公共传送室的许多处理室中执行。处理室的布置以及衬底可以通过处理室的顺序可能影响器件性能。通过在公共传送室周围放置特定的处理室，可以执行多个处理，而不会过度地将TFT暴露于大气。或者，通过使基板依次通过特定的处理室，可以进行多个处理，而不会过度地将TFT暴露于大气。

7. 发明申请

WO2013106166A1 THIN FILM SEMICONDUCTORS MADE THROUGH LOW TEMPERATURE PROCESS 审中-公开
标题翻译：薄膜半导体通过低温工艺制成
公开(公告)号：WO2013106166A1
公开(公告)日：2013-07-18
申请号：PCT/US2012/070071
申请日：2012-12-17
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/12 , H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L21/02614 , H01L21/02521 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02581 , H01L21/02612 , H01L21/477 , H01L29/66969 , H01L29/7869
摘要： Embodiments disclosed herein relate to a TFT and methods for manufacture thereof. Specifically, the embodiments herein relate to methods for forming a semiconductor layer at a low temperature for use in a TFT. The semiconductor layer may be formed by depositing a nitride or oxynitride layer, such as zinc nitride or oxynitride, and then converting the nitride layer into an oxynitride layer with a different oxygen content. The oxynitride layer is formed by exposing the deposited nitride layer to a wet atmosphere at a temperature between about 85 degrees Celsius and about 150 degrees Celsius. The exposure temperature is lower than the typical deposition temperature used for forming the oxynitride layer directly or annealing, which may be performed at temperatures of about 400 degrees Celsius.
摘要翻译：本文公开的实施例涉及TFT及其制造方法。具体地，本文的实施例涉及用于在TFT中用于形成低温下的半导体层的方法。半导体层可以通过沉积诸如氮化锌或氧氮化物的氮化物或氮氧化物层形成，然后将氮化物层转变为具有不同氧含量的氧氮化物层。氧氮化物层通过在大约85摄氏度到大约150摄氏度之间的温度下将沉积的氮化物层暴露于湿气氛中而形成。曝光温度低于用于直接形成氧氮化物层或退火的典型沉积温度，其可以在约400摄氏度的温度下进行。

8. 发明申请

WO2011037829A2 METHODS OF FABRICATING METAL OXIDE OR METAL OXYNITRIDE TFTS USING WET PROCESS FOR SOURCE-DRAIN METAL ETCH 审中-公开
标题翻译：使用湿法浸出金属蚀刻过程制备金属氧化物或金属氧化物TFTS的方法
公开(公告)号：WO2011037829A2
公开(公告)日：2011-03-31
申请号：PCT/US2010/049239
申请日：2010-09-17
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/786 , G02F1/136
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606
摘要： The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.
摘要翻译：本发明一般涉及薄膜晶体管（TFT）以及制造TFT的方法。 TFT的有源沟道可以包括一种或多种选自锌，镓，锡，铟和镉的金属。活性通道还可以包含氮和氧。为了在源极 - 漏极电极图案化期间保护有源沟道，可以在有源层上沉积蚀刻停止层。蚀刻停止层防止有源沟道暴露于用于限定源极和漏极的等离子体。当湿法蚀刻用于有源沟道的活性材料层时，蚀刻停止层和源极和漏极可以用作掩模。

9. 发明申请

WO2009117438A2 PROCESS TO MAKE METAL OXIDE THIN FILM TRANSISTOR ARRAY WITH ETCH STOPPING LAYER 审中-公开
标题翻译：使用蚀刻停止层制造金属氧化物薄膜晶体管阵列的工艺
公开(公告)号：WO2009117438A2
公开(公告)日：2009-09-24
申请号：PCT/US2009/037428
申请日：2009-03-17
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/786 , H01L21/3065
CPC分类号： H01L29/7869
摘要： The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.
摘要翻译：薄膜晶体管（TFT）和制造TFT的方法技术领域本发明总体上涉及薄膜晶体管（TFT）和制造TFT的方法。 TFT的有源沟道可以包括从由锌，镓，锡，铟和镉组成的组中选择的一种或多种金属。活性通道还可以包含氮和氧。为了在源极 - 漏极电极图案化期间保护有源沟道，可以在有源层上沉积蚀刻停止层。蚀刻停止层防止有源沟道暴露于用于限定源电极和漏电极的等离子体。当湿蚀刻用于活性通道的活性材料层时，蚀刻停止层和源电极和漏电极可以用作掩模。

10. 发明申请

WO2009018509A1 THIN FILM TRANSISTORS USING THIN FILM SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：薄膜薄膜晶体管使用薄膜半导体材料
公开(公告)号：WO2009018509A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/071890
申请日：2008-08-01
申请人： APPLIED MATERIALS, INC. , YE, Yan
发明人： YE, Yan
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225
摘要： The present invention generally comprises TFTs having semiconductor material comprising oxygen, nitrogen, and one or more element selected from the group consisting of zinc, tin, gallium, cadmium, and indium as the active channel. The semiconductor material may be used in bottom gate TFTs, top gate TFTs, and other types of TFTs. The TFTs may be patterned by etching to create both the channel and the metal electrodes. Then, the source-drain electrodes may be defined by dry etching using the semiconductor material as an etch stop layer. The active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values. The tuning may be accomplished by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.
摘要翻译：本发明通常包括具有包含氧，氮以及选自锌，锡，镓，镉和铟的一种或多种元素作为活性通道的半导体材料的TFT。半导体材料可用于底栅TFT，顶栅TFT和其它类型的TFT。可以通过蚀刻图案化TFT以产生通道和金属电极。然后，源 - 漏电极可以通过使用半导体材料作为蚀刻停止层的干蚀刻来限定。有源层载流子浓度，迁移率和与TFT的其它层的界面可以调整到预定值。可以通过将含氮气体改变为含氧气体流量比，退火和/或等离子体处理沉积的半导体膜或改变铝掺杂浓度来实现调谐。

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