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1. 发明申请

WO2011009002A3 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
公开(公告)号：WO2011009002A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042194
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
发明人： CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/205
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

2. 发明申请

WO2012099681A2 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：WO2012099681A2
公开(公告)日：2012-07-26
申请号：PCT/US2011/066281
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
发明人： YANG, Jang-Gyoo , MILLER, Matthew L. , CHEN, Xinglong , CHUC, Kien N. , LIANG, Qiwei , VENKATARAMAN, Shankar , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

3. 发明申请

WO2012093983A2 REMOTE PLASMA SOURCE SEASONING 审中-公开
标题翻译：远程等离子源调理
公开(公告)号：WO2012093983A2
公开(公告)日：2012-07-12
申请号：PCT/US2010/045938
申请日：2010-08-18
申请人： APPLIED MATERIALS, INC. , PARK, Soonam , JEON, Soo , TRAN, Toan Q. , YANG, Jang-Gyoo , LIANG, Qiwei , LUBOMIRSKY, Dmitry
发明人： PARK, Soonam , JEON, Soo , TRAN, Toan Q. , YANG, Jang-Gyoo , LIANG, Qiwei , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述调制远程等离子体系统的方法。该方法包括将含硅前体流入远程等离子体区域以在远程等离子体系统的内表面上沉积含硅膜的步骤。这些方法减少沉积过程中与经过老化的壁面的反应，导致沉积速率提高，沉积均匀性改善并且在随后的沉积期间减少缺陷率。

4. 发明申请

WO2010048076A2 PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS 审中-公开
标题翻译：用于室清洁和过程的等离子体源
公开(公告)号：WO2010048076A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061145
申请日：2009-10-19
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , YANG, Jang Gyoo , LIANG, Qiwei , MILLER, Matthew L. , SANTOSA, James , CHEN, Xinglong , SMITH, Paul F.
发明人： LUBOMIRSKY, Dmitry , YANG, Jang Gyoo , LIANG, Qiwei , MILLER, Matthew L. , SANTOSA, James , CHEN, Xinglong , SMITH, Paul F.
IPC分类号： H05H1/34 , H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/4405 , H01J37/32036 , H01J37/32045 , H01J37/32082 , H01J37/32183 , H01J37/32357
摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.
摘要翻译：提供了用于处理基板和处理处理室的装置和方法。在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有在第一位置和第二位置之间可互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

5. 发明申请

WO2007140425A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140425A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/070000
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N. , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N. , YIEH, Ellie
IPC分类号： H05H1/24
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

6. 发明申请

WO2007140421A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069996
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23C16/452
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

7. 发明申请

WO2007140426A2 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/070001
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , PARK, Soonam , CHUC, Kien, N , YIEH, Ellie
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

8. 发明申请

WO2011063146A2 PLASMA SOURCE DESIGN 审中-公开
标题翻译：等离子源设计
公开(公告)号：WO2011063146A2
公开(公告)日：2011-05-26
申请号：PCT/US2010/057274
申请日：2010-11-18
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , YANG, Jang-Gyoo , MILLER, Matthew L. , PINSON, Jay D., III , CHUC, Kien N.
发明人： LUBOMIRSKY, Dmitry , YANG, Jang-Gyoo , MILLER, Matthew L. , PINSON, Jay D., III , CHUC, Kien N.
IPC分类号： H05H1/46 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
摘要翻译：本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够在等离子体产生区中产生自由基和/或气体离子，该等离子体产生区对称地位于磁体核心元件通过使用电磁能源。通常，等离子体生成区域和磁芯的取向和形状允许将所递送的电磁能量有效且均匀地耦合到设置在等离子体生成区域中的气体。通常，在等离子体生成区域中形成的等离子体的改善的特性能够改善在布置在等离子体生成区域下游的衬底或处理室的一部分上执行的沉积，蚀刻和/或清洁过程。 p>

9. 发明申请

WO2011062755A2 PLASMA SOURCE DESIGN 审中-公开
标题翻译：等离子体源设计
公开(公告)号：WO2011062755A2
公开(公告)日：2011-05-26
申请号：PCT/US2010/055077
申请日：2010-11-02
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , YANG, Jang-Gyoo , MILLER, Matthew L. , PINSON, Jay D., III , CHUC, Kien N. , VENKATARMAN, Shankar
发明人： LUBOMIRSKY, Dmitry , YANG, Jang-Gyoo , MILLER, Matthew L. , PINSON, Jay D., III , CHUC, Kien N. , VENKATARMAN, Shankar
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/205
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
摘要翻译：本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子，所述等离子体产生区域围绕磁芯元件对称地定位资源。通常，等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。通常，等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积，蚀刻和/或清洁过程。

10. 发明申请

WO2009137272A2 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A2
公开(公告)日：2009-11-12
申请号：PCT/US2009/041402
申请日：2009-04-22
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

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