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1. 发明申请

WO2013049173A3 IMPROVED INTRENCH PROFILE 审中-公开
标题翻译：改进的英语资料
公开(公告)号：WO2013049173A3
公开(公告)日：2013-06-13
申请号：PCT/US2012057294
申请日：2012-09-26
申请人： APPLIED MATERIALS INC , SAPRE KEDAR , INGLE NITIN K , TANG JING
发明人： SAPRE KEDAR , INGLE NITIN K , TANG JING
IPC分类号： H01L21/762 , H01L21/205 , H01L21/31
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
摘要翻译：描述了蚀刻半导体衬底中的凹陷的方法。该方法可以包括在衬底的具有第一密度的衬底的沟槽中形成电介质衬里层。该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二介电层。第二介电层在沉积之后最初可以是可流动的，并且具有小于衬里的第一密度的第二密度。该方法可进一步包括将衬底暴露于干蚀刻剂，其中蚀刻剂去除第一衬层和第二介电层的一部分以形成凹槽，其中干蚀刻剂包括含氟化合物和分子氢，并且其中用于去除第一电介质衬垫层以去除第二电介质层的蚀刻速率比为约1：1.2至约1：1。

2. 发明申请

WO2013052509A2 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058498
申请日：2012-10-02
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
发明人： LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

3. 发明申请

WO2013049173A2 IMPROVED INTRENCH PROFILE 审中-公开
标题翻译：改进的内容简档
公开(公告)号：WO2013049173A2
公开(公告)日：2013-04-04
申请号：PCT/US2012/057294
申请日：2012-09-26
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
发明人： SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
摘要翻译：描述了蚀刻半导体衬底中的凹部的方法。该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。该方法可以进一步包括将衬底暴露于干蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹陷，其中干燥蚀刻剂包括含氟化合物和分子氢，并且其中用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

4. 发明申请

WO2013032638A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 审中-公开
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：WO2013032638A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/049768
申请日：2012-08-06
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin, K. , LEE, Young, S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性的固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

5. 发明申请

WO2012094149A2 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A2
公开(公告)日：2012-07-12
申请号：PCT/US2011/066275
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
发明人： LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

6. 发明申请

WO2011090626A3 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：WO2011090626A3
公开(公告)日：2011-10-27
申请号：PCT/US2010060852
申请日：2010-12-16
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过将氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调节氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

7. 发明申请

WO2011112812A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A3
公开(公告)日：2011-09-15
申请号：PCT/US2011/027900
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
发明人： GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
IPC分类号： H01L21/3065
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

8. 发明申请

WO2011084812A2 FLOWABLE DIELECTRIC USING OXIDE LINER 审中-公开
标题翻译：使用氧化物衬垫的可流动介质
公开(公告)号：WO2011084812A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061605
申请日：2010-12-21
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K
发明人： LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01J37/32357 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.
摘要翻译：描述了形成氧化硅层的方法。该方法包括将不含碳的含硅前体与自由基氮前体混合，以及在衬底上沉积含硅和氮的层。通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基氮前体。在沉积含硅和氮的层之前，形成氧化硅衬里层以改善含硅和氮的层的粘附性，光滑性和流动性。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。方法还包括在施加旋涂含硅材料之前形成氧化硅衬里层。

9. 发明申请

WO2011084752A2 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
标题翻译：用于放射性组分CVD的现场臭氧固化
公开(公告)号：WO2011084752A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061356
申请日：2010-12-20
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/314
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

10. 发明申请

WO2005064651A3 IMPROVED GAP-FILL TECHNIQUES 审中-公开
公开(公告)号：WO2005064651A3
公开(公告)日：2005-07-14
申请号：PCT/US2004/043698
申请日：2004-12-21
申请人： APPLIED MATERIALS, INC. , MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
发明人： MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
IPC分类号： H01L21/762
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

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