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1. 发明申请

WO2012057906A4 A SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
公开(公告)号：WO2012057906A4
公开(公告)日：2012-05-03
申请号：PCT/US2011/049013
申请日：2011-08-24
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , CHAE, Yong Kee
发明人： SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , CHAE, Yong Kee
IPC分类号： H01L31/18 , H01L31/042 , H01L31/0236
摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

2. 发明申请

WO2013059698A1 METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS 审中-公开
标题翻译：用于制造硅异质太阳能电池的方法和装置
公开(公告)号：WO2013059698A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061162
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
发明人： SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
IPC分类号： H01L31/18 , H01L31/042 , C23C16/44
CPC分类号： H01L21/0257 , C23C16/24 , C23C16/44 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32577 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.
摘要翻译：一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

3. 发明申请

WO2013059542A1 METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS 审中-公开
标题翻译：用于制造硅异质太阳能电池的方法和装置
公开(公告)号：WO2013059542A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/060940
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
发明人： SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
IPC分类号： H01L31/18 , H01L31/042 , C23C16/44
CPC分类号： H01L21/0257 , C23C16/24 , C23C16/44 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32577 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The one or more VHF grounding straps provide a low-impedance current path between the shadow frame and the at least one of the plurality of walls. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.
摘要翻译：一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。一个或多个VHF接地带在阴影框架和多个壁中的至少一个之间提供低阻抗电流路径。该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

4. 发明申请

WO2011011301A2 A MIXED SILICON PHASE FILM FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：用于高效薄膜硅太阳电池的混合硅相薄膜
公开(公告)号：WO2011011301A2
公开(公告)日：2011-01-27
申请号：PCT/US2010/042392
申请日：2010-07-19
申请人： APPLIED MATERIALS, INC. , YANG, Fan , ZHANG, Lin , ZHENG, Yi , SCHMITT, Francimar , YUAN, Zheng
发明人： YANG, Fan , ZHANG, Lin , ZHENG, Yi , SCHMITT, Francimar , YUAN, Zheng
IPC分类号： H01L31/075
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.
摘要翻译：提供了一种用于形成太阳能电池的方法和设备。在一个实施例中，光伏器件包括形成在衬底上的第一pin结电池，其中pin结电池包括p型含硅层，形成在p型含硅层上的本征型含硅层和在本征型含硅层上形成的n型含硅层，其中本征型含硅层包含第一对微晶层和非晶硅层。

5. 发明申请

WO2005064651A3 IMPROVED GAP-FILL TECHNIQUES 审中-公开
公开(公告)号：WO2005064651A3
公开(公告)日：2005-07-14
申请号：PCT/US2004/043698
申请日：2004-12-21
申请人： APPLIED MATERIALS, INC. , MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
发明人： MUKAI, Kevin, Mikio , BRANSHAW, Kimberly , YUAN, Zheng , XIA, Xinyun , CHEN, Xiaolin , LI, Dongqing , KARIM, M., Ziaul , TON, Van , CHING, Cary , GHANAYEIM, Steve , INGLE, Nitin, K.
IPC分类号： H01L21/762
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.

6. 发明申请

WO2005033361A1 GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：气体分配淋浴
公开(公告)号：WO2005033361A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/031424
申请日：2004-09-24
申请人： APPLIED MATERIALS, INC. , JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
发明人： JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/45565
摘要： A gas distribution showerhead (1501) is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings (y). In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet (1501a) to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.
摘要翻译：气体分配喷头（1501）被设计成允许在宽范围的淋浴头到晶片间隔（y）上沉积均匀的厚膜。根据本发明的一个实施例，面板的孔口入口（1501a）的数量，宽度和/或深度减小，以增加流动阻力，从而提高面板上游的压力。这种升高的上游气体流量压力又降低了通过喷头的中心部分相对于边缘部分流动的气体的速度变化，从而确保沉积在晶片的边缘或中心部分上的膜的厚度均匀。

7. 发明申请

WO2011113177A1 METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION 审中-公开
标题翻译：远程等离子体源辅助含硅膜沉积的方法和装置
公开(公告)号：WO2011113177A1
公开(公告)日：2011-09-22
申请号：PCT/CN2010/000325
申请日：2010-03-17
申请人： APPLIED MATERIALS, INC. , LAKSHMANAN, Annamalai , FANG, Jun , TANG, Jianshe , HO, Dustin W. , SCHMITT, Francimar , TSO, Alan , CHO, Tom , SHIEH, Brian Sy-Yuan , PONNEKANTI, Hari K. , EBERSPACHER, Chris , YUAN, Zheng
发明人： LAKSHMANAN, Annamalai , FANG, Jun , TANG, Jianshe , HO, Dustin W. , SCHMITT, Francimar , TSO, Alan , CHO, Tom , SHIEH, Brian Sy-Yuan , PONNEKANTI, Hari K. , EBERSPACHER, Chris , YUAN, Zheng
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/5096 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
摘要翻译：提供了在形成太阳能电池期间沉积非晶硅和微晶硅膜的装置和方法。在一个实施方案中，提供了一种方法和装置，用于将氢自由基直接生成并引入处理室的处理区域中，以与用于在基板上沉积膜的含硅前体反应。在一个实施方案中，氢自由基由远程等离子体源产生，并且经由视线路径直接引入处理区域，以在到达处理区域之前最小化氢自由基的能量损失。

8. 发明申请

WO2007140424A2 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：WO2007140424A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069999
申请日：2007-05-30
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
发明人： INGLE, Nitin, K. , YUAN, Zheng , GEE, Paul , SAPRE, Kedar
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。该方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，并将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

9. 发明申请

WO2010021938A3 SHOWERHEAD AND SHADOW FRAME 审中-公开
公开(公告)号：WO2010021938A3
公开(公告)日：2010-02-25
申请号：PCT/US2009/053922
申请日：2009-08-14
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
发明人： CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.

10. 发明申请

WO2009154889A2 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/043189
申请日：2009-05-07
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
发明人： CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

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