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1. 发明申请

WO2010021938A3 SHOWERHEAD AND SHADOW FRAME 审中-公开
公开(公告)号：WO2010021938A3
公开(公告)日：2010-02-25
申请号：PCT/US2009/053922
申请日：2009-08-14
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
发明人： CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.

2. 发明申请

WO2009154889A2 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/043189
申请日：2009-05-07
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
发明人： CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

3. 发明申请

WO2013162774A1 METHOD AND APPARATUS FOR INDEPENDENT WAFER HANDLING 审中-公开
标题翻译：用于独立水处理的方法和装置
公开(公告)号：WO2013162774A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/032542
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC. , YANG, Yao-Hung , OH, Jeonghoon , HOOSHDARAN, Frank F. , CHO, Tom K. , HOU, Tao , GUO, Yuanhung
发明人： YANG, Yao-Hung , OH, Jeonghoon , HOOSHDARAN, Frank F. , CHO, Tom K. , HOU, Tao , GUO, Yuanhung
IPC分类号： H01L21/683 , H01L21/677
CPC分类号： H01L21/67739 , H01L21/67742 , H01L21/67748 , H01L21/683 , H01L21/68742
摘要： A substrate processing system with independent substrate placement capability to two or more substrate support assemblies is provided. Two different sets of fixed-length lift pins are disposed on two or more substrate support lift pin assemblies of two or more process chambers, where the length of each lift pin in one process chamber is different from the length of each lift pin in another process chamber. The substrate processing system includes simplified mechanical substrate support lift pin mechanisms and minimum accessory parts cooperating with a substrate transfer mechanism (e.g., a transfer robot) for efficient and independent loading, unloading, and transfer of one or more substrates between two or more processing regions in a twin chamber or between two or more process chambers. A method for positioning one or more substrates to be loaded, unloaded, or processed independently or simultaneously in two or more processing regions or process chambers is provided.
摘要翻译：提供了一种对两个或更多个基板支撑组件具有独立的基板放置能力的基板处理系统。两个不同组的固定长度提升销设置在两个或更多个处理室的两个或更多个基板支撑提升销组件上，其中一个处理室中的每个提升销的长度在另一个过程中与每个提升销的长度不同室。基板处理系统包括简化的机械基板支撑提升销机构和与基板传送机构（例如，传送机器人）协作的最小附件部件，用于在两个或多个处理区域之间有效且独立地加载，卸载和传送一个或多个基板在双室中或两个或更多个处理室之间。提供了一种用于定位要在两个或更多个处理区域或处理室中单独或同时加载，卸载或处理的一个或多个基板的方法。

4. 发明申请

WO2011008805A3 PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN 审中-公开
标题翻译：带升降磨损板的升降室
公开(公告)号：WO2011008805A3
公开(公告)日：2011-05-05
申请号：PCT/US2010041895
申请日：2010-07-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
发明人： WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/02 , H01L21/683
CPC分类号： H01L21/68742
摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
摘要翻译：提供了用于处理包括平移磨损板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于在衬底支撑件上在处理室或其他类型的室中间隔衬底的提升销上的应力。在另一个实施例中，一种用于处理基板的装置包括处理室，该处理室包括设置在室体中的基板支撑件衬套组件设置在衬底支撑件中。升降销穿过套管组件布置。提供磨损板，该磨损板联接到腔体并与升降销对齐。耐磨板可相对于腔室主体的中心线横向移动，以在接触耐磨板时适应提升销的横向运动。

5. 发明申请

WO2011008805A2 PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN 审中-公开
标题翻译：加工室用翻转式打码机
公开(公告)号：WO2011008805A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/041895
申请日：2010-07-14
申请人： APPLIED MATERIALS, INC. , WHITE, John, M. , OH, Jeonghoon , CHO, Tom, K. , JAMES, Silja , PAI, Uday , LOPEZ, Oscar , POLYAK, Alexander, S.
发明人： WHITE, John, M. , OH, Jeonghoon , CHO, Tom, K. , JAMES, Silja , PAI, Uday , LOPEZ, Oscar , POLYAK, Alexander, S.
IPC分类号： H01L21/68 , H01L21/683 , H01L21/02 , G02F1/13
CPC分类号： H01L21/68742
摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
摘要翻译：提供了用于处理包括平移耐磨板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于将衬底从处理或其它类型的室中的衬底支撑件定位的升降销上的应力。在另一个实施例中，一种用于处理衬底的设备包括处理室，其包括设置在室主体中的衬底支撑件。衬套组件设置在衬底支撑件中。提升销设置穿过套管组件。提供了耐磨板，其连接到腔室主体并与提升销对准。耐磨板相对于室主体的中心线横向运动，以在接触耐磨板时适应提升销的横向运动。

6. 发明申请

WO2005059974A1 EDGE FLOW FACEPLATE FOR IMPROVEMENT OF CVD FILM PROPERTIES 审中-公开
标题翻译：用于改善CVD膜特性的边缘流动面
公开(公告)号：WO2005059974A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/041967
申请日：2004-12-14
申请人： APPLIED MATERIALS, INC. , ZHAO, Mosheng , TSUEI, Lun , ROCHA-ALVAREZ, Juan Carlos , CHO, Tom K.
发明人： ZHAO, Mosheng , TSUEI, Lun , ROCHA-ALVAREZ, Juan Carlos , CHO, Tom K.
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244
摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.
摘要翻译：根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流动到半导体晶片的表面。位于面板中心的第一组孔布置成不呈径向对称的非同心方式。这种非对称布置实现了从其分布的孔和气体的最大密度。为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置并呈现径向对称性的第二组孔。处理具有流过第一组和第二组孔的气体的衬底导致形成在中心到边缘区域具有增强的均匀性的膜。

7. 发明申请

WO2013058970A1 SUBSTRATE SUPPORT BUSHING 审中-公开
标题翻译：基座支撑
公开(公告)号：WO2013058970A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/058232
申请日：2012-10-01
申请人： APPLIED MATERIALS, INC. , HOU, Tao , OH, Jeonghoon , CHO, Tom, K. , MATLOSZ, Andrzej , HOOSHDARAN, Frank, F. , YANG, Yao-Hung
发明人： HOU, Tao , OH, Jeonghoon , CHO, Tom, K. , MATLOSZ, Andrzej , HOOSHDARAN, Frank, F. , YANG, Yao-Hung
IPC分类号： H01L21/683
CPC分类号： C23C16/4586 , C23C16/505 , F16C29/02 , H01L21/68742
摘要： A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring having a first inner edge, the first ring disposed in the aperture in an upper portion of the tubular body, and a second ring having a second inner edge, the second ring disposed in the aperture in a lower portion of the tubular body. In another aspect, the first inner edge has a first radius of curvature, and the second inner edge has a second radius of curvature. In another aspect, a first inner edge diameter, a second inner edge diameter, the first radius of curvature, and the second radius of curvature are selected such that a support pin extending through the aperture contacts the bushing assembly on at most two points.
摘要翻译：通常提供用于在处理室内支撑衬底的衬套组件。在一个方面，套管组件包括具有外周边和延伸穿过其的孔的管状体，第一环具有第一内边缘，第一环设置在管状体的上部中的孔中，第二环具有第二内边缘，所述第二环设置在所述管状体的下部中的所述孔中。在另一方面，第一内边缘具有第一曲率半径，并且第二内边缘具有第二曲率半径。在另一方面，选择第一内边缘直径，第二内边缘直径，第一曲率半径和第二曲率半径，使得延伸穿过孔的支撑销在最多两点处接触衬套组件。

8. 发明申请

WO2011009007A3 IMPROVED LIFT PIN GUIDES 审中-公开
公开(公告)号：WO2011009007A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042199
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , PAI, Uday , LOPEZ, Oscar , OH, Jeonghoon , CHO, Tom K. , WHITE, John M. , JAMES, Silja , POLYAK, Alexander S.
发明人： PAI, Uday , LOPEZ, Oscar , OH, Jeonghoon , CHO, Tom K. , WHITE, John M. , JAMES, Silja , POLYAK, Alexander S.
IPC分类号： H01L21/68 , H01L21/205 , G02F1/13
摘要： Lift pin guides include bearing elements with rollers having liners comprised of a material that provides both self lubrication and cushioning in order to prevent lift pin binding and extend the life of the lift pins and the lift pin guides. In one embodiment, each lift pin guide includes an upper bearing element near the upper surface of a substrate support and a lower bearing element disposed a distance beneath the substrate support in order to reduce stresses experienced by the lift pin. The lift pin guides may be used in a vacuum deposition chamber adapted to deposit materials onto substrates to form electronic devices such as thin film transistors, organic light emitting diodes, photovoltaic devices or solar cells, including chemical vapor deposition chambers and physical vapor deposition chambers. The lift pin guides may also be used in load lock chambers, etching chambers or other applications where lift pins are utilized.

9. 发明申请

WO2010065473A2 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：气体分配阻塞装置
公开(公告)号：WO2010065473A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066145
申请日：2009-11-30
申请人： APPLIED MATERIALS, INC. , TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
发明人： TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施方案通常提供用于改变在处理室的喷头上提供的工艺气体的流量和压力差的装置和方法，以提供跨过设置在其中的衬底的表面的改进的沉积均匀性。在一个实施例中，阻挡板设置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调节的。在另一个实施例中，阻挡板具有非平面的表面轮廓。在另一个实施例中，区域阻滞板设置在背板和喷头之间。在另一个实施例中，中间阻滞板和外围阻滞板设置在背板和喷头之间。

10. 发明申请

WO2010051233A3 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
公开(公告)号：WO2010051233A3
公开(公告)日：2010-05-06
申请号：PCT/US2009/061893
申请日：2009-10-23
申请人： APPLIED MATERIALS, INC. , ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
发明人： ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

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