专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2016180448A1 METHOD OF MANUFACTURING A LAYER STACK FOR DISPLAY MANUFACTURING AND APPARATUS THEREFORE 审中-公开
标题翻译：制造用于显示器制造的层叠体的方法及其装置
公开(公告)号：WO2016180448A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060233
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , TSAI, Pipi , LIN, Wan-Yu
发明人： SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , TSAI, Pipi , LIN, Wan-Yu
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54 , C23C14/58
CPC分类号： C23C14/086 , C23C14/3492 , C23C14/54 , C23C14/5873
摘要： A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes depositing (101) a layer stack onto a substrate by sputtering a first layer with a first set of processing parameters from an indium oxide containing target; sputtering a second set of processing parameters different from the first set of processing parameters onto the first layer from an indium oxide containing target a second layer with, and patterning (102) the layer stack by etching. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system (230) and configured to execute a program code for conducting the method.
摘要翻译：因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。该方法包括通过用来自含氧化铟的目标物体的第一组处理参数溅射第一层而将层堆叠沉积（101）到衬底上; 将不同于第一组处理参数的第二组处理参数从含有氧化铟的靶溅射到第一层上的第二层，并通过蚀刻图案化（102）层叠层。装置（200）包括真空室（210）; 一个或多个含氧化铟的靶（220a，220b），用于溅射透明导电氧化物层; 气体分配系统（230），用于在真空室内提供处理气体; 以及连接到气体分配系统（230）并被配置为执行用于执行该方法的程序代码的控制器（240）。

2. 发明申请

WO2016180447A1 METHOD OF MANUFACTURING A LAYER FOR DISPLAY MANUFACTURING USING HYDROGEN AND APPARATUS THEREFORE 审中-公开
标题翻译：使用氢气和装置制造显示器制造层的方法
公开(公告)号：WO2016180447A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060232
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
发明人： SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54
CPC分类号： C23C14/083 , C23C14/3492 , C23C14/54
摘要： A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere. The processing gas atmosphere includes H 2 , O 2 , and an inert gas, wherein the content of H 2 is from 2.2% to 20.0%, the content of O 2 is from 0.5% to 15.0%, and the content of inert gas is from 65.0% to 97.3 %. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system and configured to execute a program code for conducting the method.
摘要翻译：因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。该方法包括在处理气体气氛中从含氧化铟的靶溅射透明导电氧化物层。处理气体气氛包括H 2，O 2和惰性气体，其中H 2的含量为2.2％至20.0％，O 2的含量为0.5％至15.0％，惰性气体的含量为65.0％至 97.3％。设备（200）包括真空室（210）; 在真空室内的一个或多个含氧化铟的靶（220a，220b）用于溅射透明导电氧化物层; 气体分配系统（230），用于在所述真空室内提供处理气体; 以及连接到所述气体分配系统并被配置为执行用于执行所述方法的程序代码的控制器（240）。

3. 发明申请

WO2016050284A1 CATHODE SPUTTERING MODE 审中-公开
标题翻译：阴极溅射模式
公开(公告)号：WO2016050284A1
公开(公告)日：2016-04-07
申请号：PCT/EP2014/070941
申请日：2014-09-30
申请人： APPLIED MATERIALS, INC. , KLÖPPEL, Andreas , PIERALISI, Fabio , LIU, Jian , HANIKA, Markus , LOPP, Andreas
发明人： KLÖPPEL, Andreas , PIERALISI, Fabio , LIU, Jian , HANIKA, Markus , LOPP, Andreas
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/3444 , H01J37/345 , H01J37/3464
摘要： A method for depositing material is provided. The method includes sputtering material from a cathode array, wherein only one of two adjacent cathodes of the cathode array are operated to have one or more time intervals, wherein only one cathode of the adjacent cathodes sputter on the same substrate.
摘要翻译：提供一种沉积材料的方法。该方法包括来自阴极阵列的溅射材料，其中阴极阵列的两个相邻阴极中只有一个被操作以具有一个或多个时间间隔，其中相邻阴极中只有一个阴极溅射在相同的衬底上。

4. 发明申请

WO2018068833A1 MAGNET ARRANGEMENT FOR A SPUTTER DEPOSITION SOURCE AND MAGNETRON SPUTTER DEPOSITION SOURCE 审中-公开
标题翻译：溅射沉积源和磁控溅射沉积源的磁体排列
公开(公告)号：WO2018068833A1
公开(公告)日：2018-04-19
申请号：PCT/EP2016/074343
申请日：2016-10-11
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , HANIKA, Markus , PARK, Hyun Chan , KLÖPPEL, Andreas
发明人： LOPP, Andreas , HANIKA, Markus , PARK, Hyun Chan , KLÖPPEL, Andreas
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3405 , C23C14/35 , H01J37/345 , H01J37/3452 , H01J37/3461
摘要： According to one aspect of the present disclosure, a magnet arrangement (100) for a sputter deposition source is provided. The magnet arrangement comprises a first magnet (110) and a second magnet (120) adapted to confine a plasma in a plasma confinement region (150); and at least one field influencing element (115) comprising a magnetizable material adapted to effect a local displacement of the plasma confinement region toward the at least one field influencing element. According to a second aspect, a magnetron sputter deposition source (400) with a magnet arrangement and a method of depositing a film on a substrate with a magnetron sputter deposition source comprising a magnet arrangement are provided.
摘要翻译：根据本公开的一个方面，提供了一种用于溅射沉积源的磁体布置（100）。该磁体装置包括适于将等离子体限制在等离子体约束区域（150）中的第一磁体（110）和第二磁体（120）; 和至少一个场影响元件（115），其包括适于实现等离子体约束区朝向至少一个场影响元件的局部位移的可磁化材料。根据第二方面，提供了一种具有磁体布置的磁控溅射沉积源（400）以及一种利用包括磁体布置的磁控管溅射沉积源在衬底上沉积膜的方法。

5. 发明申请

WO2015139739A1 PROCESS GAS SEGMENTATION FOR STATIC REACTIVE SPUTTER PROCESSES 审中-公开
标题翻译：静态反应溅射工艺的工艺气体分配
公开(公告)号：WO2015139739A1
公开(公告)日：2015-09-24
申请号：PCT/EP2014/055427
申请日：2014-03-18
申请人： APPLIED MATERIALS, INC. , KLÖPPEL, Andreas , HANIKA, Markus , ZENGEL, Claus , SCHEER, Evelyn
发明人： KLÖPPEL, Andreas , HANIKA, Markus , ZENGEL, Claus , SCHEER, Evelyn
IPC分类号： C23C14/00 , C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： C23C14/0063 , C23C14/3464 , C23C14/352 , H01J37/3244 , H01J37/3405 , H01J37/3417
摘要： An apparatus for static deposition of material on a substrate is described. The apparatus includes a gas distribution system for providing one or more process gases, wherein the gas distribution system is configured for controlling the flow rate of at least one process gas of the one or more process gases independently for two or more positions along a substrate transport direction and a cathode array having three or more cathodes which are spaced apart along the substrate transport direction.
摘要翻译：描述了一种用于材料静电沉积在衬底上的装置。该装置包括用于提供一种或多种处理气体的气体分配系统，其中气体分配系统被配置为独立地控制一个或多个处理气体的至少一个处理气体的流速，用于沿衬底输送方向和具有三个或更多个阴极的阴极阵列，其沿衬底输送方向间隔开。

6. 发明申请

WO2015192873A1 APPARATUS AND METHOD FOR PROCESSING A LARGE AREA SUBSTRATE WITH CLOSED-LOOP DEPOSITION CONTROL FOR STATIC ARRAY DEPOSITION PROCESSES 审中-公开
标题翻译：用于处理用于静态阵列沉积过程的具有闭环沉积控制的大面积基底的装置和方法
公开(公告)号：WO2015192873A1
公开(公告)日：2015-12-23
申请号：PCT/EP2014/062571
申请日：2014-06-16
申请人： APPLIED MATERIALS, INC. , KLÖPPEL, Andreas
发明人： KLÖPPEL, Andreas
IPC分类号： C23C14/35 , C23C14/52 , C23C14/54 , C23C14/56 , C30B25/16
CPC分类号： C23C14/568 , C23C14/547 , C23C14/566 , H01L21/67253 , H01L21/6776
摘要： A device for measuring a property of a material layer deposited on a large-area substrate is described. The device includes a controller; a substrate transport arrangement in communication with the controller for determining a position and/or velocity of the substrate; an array of at least three sources configured to deposit a first material layer on a surface of the substrate, wherein array of at least three sources is in communication with the controller, wherein the controller is configured to control the deposition of the first material layer; and a measurement unit configured to be in communication with the controller to allow for a measurement of a property of the first material layer over the substrate while the substrate is moved by the substrate transport arrangement along the measurement unit, wherein the controller is configured to correlate the measurement of the property of the first material layer with a signal indicating the position and/or velocity of the substrate along the substrate transport arrangement.
摘要翻译：描述了用于测量沉积在大面积基板上的材料层的性质的装置。该装置包括控制器; 衬底传送装置，与所述控制器连通，用于确定所述衬底的位置和/或速度; 至少三个源的阵列，其配置成在所述衬底的表面上沉积第一材料层，其中至少三个源的阵列与所述控制器通信，其中所述控制器被配置为控制所述第一材料层的沉积; 以及测量单元，被配置为与所述控制器连通，以允许在所述基板通过所述基板输送装置沿所述测量单元移动所述基板的同时测量所述第一材料层的特性，其中所述控制器被配置为使用第一材料层的特性测量具有指示衬底沿衬底输送装置的位置和/或速度的信号。

7. 发明申请

WO2018113904A1 SPUTTER DEPOSITION SOURCE AND METHOD OF DEPOSITING A LAYER ON A SUBSTRATE 审中-公开
公开(公告)号：WO2018113904A1
公开(公告)日：2018-06-28
申请号：PCT/EP2016/081768
申请日：2016-12-19
申请人： APPLIED MATERIALS, INC. , PARK, Hyun Chan , KLÖPPEL, Andreas , BHOOLOKAM, Ajay Sampath
发明人： PARK, Hyun Chan , KLÖPPEL, Andreas , BHOOLOKAM, Ajay Sampath , TSAI, Pipi
IPC分类号： H01J37/34 , C23C14/34
摘要： According to one aspect of the present disclosure, a sputter deposition source (100, 200) is provided. The sputter deposition source comprises: an array of electrodes (110) having two or more pairs of electrodes, wherein each electrode (112) of the array of electrodes is rotatable around a respective rotation axis (A) and is configured for providing a target material to be deposited on a substrate (10); and a power supply arrangement (120) configured to supply the two or more pairs of electrodes with a bipolar pulsed DC voltage, respectively. According to a further aspect of the present disclosure, a method of depositing a layer on a substrate with a sputter deposition source (100, 200) is provided.

8. 发明申请

WO2018130301A1 SPUTTER DEPOSITION APPARATUS FOR COATING A SUBSTRATE AND METHOD OF PERFORMING A SPUTTER DEPOSITION PROCESS 审中-公开
公开(公告)号：WO2018130301A1
公开(公告)日：2018-07-19
申请号：PCT/EP2017/050693
申请日：2017-01-13
申请人： APPLIED MATERIALS, INC. , KLÖPPEL, Andreas , LOPP, Andreas
发明人： KLÖPPEL, Andreas , LOPP, Andreas
IPC分类号： H01J37/32 , H01J37/34
摘要： A sputter deposition apparatus is provided. The sputter deposition apparatus includes a plurality of cathode assemblies configured for sputtering target material in a sputter deposition process, wherein each of the plurality of cathode assemblies includes a rotatable target and a magnet assembly arranged in the rotatable target, wherein the plurality of cathode assemblies includes an outermost cathode assembly. The sputter deposition apparatus further includes a plurality of anode elements configured for influencing a plasma generated in the sputter deposition process, wherein the plurality of anode elements includes an outermost anode element. The sputter deposition apparatus further includes an ancillary magnet assembly. The outermost cathode assembly, the outermost anode element and the ancillary magnet assembly are arranged in this order, wherein the ancillary magnet assembly is configured for providing a magnetic field to compensate a boundary effect at an outer region of the plasma.

9. 发明申请

WO2022078592A1 SPUTTER DEPOSITION SOURCE, DEPOSITION APPARATUS AND METHOD OF COATING A SUBSTRATE 审中-公开
公开(公告)号：WO2022078592A1
公开(公告)日：2022-04-21
申请号：PCT/EP2020/078912
申请日：2020-10-14
申请人： APPLIED MATERIALS, INC. , KLÖPPEL, Andreas
发明人： KLÖPPEL, Andreas
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
摘要： According to one aspect of the present disclosure, a sputter deposition source (100) for coating a substrate (10) arranged in a coating area (105) of a deposition chamber (101) is provided. The sputter deposition source (100) includes a plurality of cathodes (120) arranged side by side in an array. Each cathode of the plurality of cathodes (120) is rotatable and has a first target support section (121) for a respective first sputter target (111) and a second target support section (122) for a respective second sputter target (112). In a first sputter position (I), the first target support sections (121) are directed toward the coating area (105), and in a second sputter position (II), the second target support sections (122) are directed toward the coating area (105). According to a second aspect, a deposition apparatus with a sputter deposition source (100) is provided. Further, methods of coating a substrate with a sputter deposition source are provided.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式