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1. 发明申请

WO2009152327A2 POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开
标题翻译：低温热或基于等离子体氧化的氧化后退火
公开(公告)号：WO2009152327A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/047035
申请日：2009-06-11
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher, S. , YOKOTA, Yoshitaka , MANI, Rajesh , SWENBERG, Johanes
发明人： OLSEN, Christopher, S. , YOKOTA, Yoshitaka , MANI, Rajesh , SWENBERG, Johanes
IPC分类号： H01L21/31 , H01L21/324
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译：本发明的实施例提供了在半导体衬底上形成氧化物层的方法。在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。

2. 发明申请

WO2011112823A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112823A2
公开(公告)日：2011-09-15
申请号：PCT/US2011/027922
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , YOKOTA, Yoshitaka , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes, F. , MARIN, Jose, A. , BALAKRISHNA, Ajit , NEWMAN, Jacob , HICKERSON, Stephen, C.
发明人： GANGULY, Udayan , YOKOTA, Yoshitaka , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes, F. , MARIN, Jose, A. , BALAKRISHNA, Ajit , NEWMAN, Jacob , HICKERSON, Stephen, C.
IPC分类号： H01L21/3065
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。在一些实施例中，材料层可以是半导体器件的浮栅。

3. 发明申请

WO2011112812A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A3
公开(公告)日：2011-09-15
申请号：PCT/US2011/027900
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
发明人： GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
IPC分类号： H01L21/3065
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

4. 发明申请

WO2011008456A3 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 审中-公开
公开(公告)号：WO2011008456A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/039753
申请日：2010-06-24
申请人： APPLIED MATERIALS, INC. , YOKOTA, Yoshitaka , OLSEN, Christopher, S. , TJANDRA, Agus, Sofian , CHO, Yonah , ROGERS, Matthew S.
发明人： YOKOTA, Yoshitaka , OLSEN, Christopher, S. , TJANDRA, Agus, Sofian , CHO, Yonah , ROGERS, Matthew S.
IPC分类号： H01L21/316 , H01L21/31 , H01L21/205
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.

5. 发明申请

WO2010141814A2 PASSIVATION PROCESS FOR SOLAR CELL FABRICATION 审中-公开
标题翻译：太阳能电池制造的钝化过程
公开(公告)号：WO2010141814A2
公开(公告)日：2010-12-09
申请号：PCT/US2010/037395
申请日：2010-06-04
申请人： APPLIED MATERIALS, INC. , BORDEN, Peter , STEWART, Michael, P. , XU, Li , MUNGEKAR, Hemant, P. , OLSEN, Christopher, S.
发明人： BORDEN, Peter , STEWART, Michael, P. , XU, Li , MUNGEKAR, Hemant, P. , OLSEN, Christopher, S.
IPC分类号： H01L31/042
CPC分类号： H01L31/1868 , H01L31/022425 , H01L31/072 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.
摘要翻译：本发明的实施例考虑使用新颖的等离子体氧化工艺形成高效太阳能电池，以在太阳能电池基板的表面上形成钝化膜堆叠。在一个实施方案中，所述方法包括提供在衬底的背面上具有第一类型的掺杂原子的衬底和在衬底的前表面上的第二类型的掺杂原子，等离子体氧化衬底的背表面以形成氧化层，并在氧化层上形成氮化硅层。

6. 发明申请

WO2010091247A2 NEGATIVELY CHARGED PASSIVATION LAYER IN A PHOTOVOLTAIC CELL 审中-公开
标题翻译：在光伏电池中负责充电的钝化层
公开(公告)号：WO2010091247A2
公开(公告)日：2010-08-12
申请号：PCT/US2010/023311
申请日：2010-02-05
申请人： APPLIED MATERIALS, INC. , BORDEN, Peter, G. , OLSEN, Christopher, S.
发明人： BORDEN, Peter, G. , OLSEN, Christopher, S.
IPC分类号： H01L31/042
CPC分类号： H01L31/02167 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention are directed to methods and apparatus for processing of a solar substrate for making a photovoltaic device. In particular, methods and apparatus for creating a negatively charged passivation layer by are provided.
摘要翻译：本发明的实施例涉及用于制造太阳能电池的太阳能基板的处理方法和装置。特别地，提供了用于产生带负电荷的钝化层的方法和装置。

7. 发明申请

WO2007001709A2 IMPROVED MANUFACTURING METHOD FOR TWO-STEP POST NITRIDATION ANNEALING OF PLASMA NITRIDED GATE DIELECTRIC 审中-公开
标题翻译：改进的等离子体硝酸盐电介质两步后置氮化反应的制造方法
公开(公告)号：WO2007001709A2
公开(公告)日：2007-01-04
申请号：PCT/US2006/020508
申请日：2006-05-26
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher, S.
发明人： OLSEN, Christopher, S.
IPC分类号： H01L21/471
CPC分类号： H01L21/0214 , H01L21/02247 , H01L21/02252 , H01L21/02337 , H01L21/28185 , H01L21/28202 , H01L21/3145 , H01L29/518
摘要： A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial pressure of oxygen at a first temperature. The silicon oxynitride film is then annealed in a second ambient comprising a second partial pressure of oxygen at a second temperature. The second partial pressure of oxygen is greater than the first partial pressure of oxygen.
摘要翻译：一种形成氮氧化硅栅极电介质的方法。该方法包括使用等离子体氮化工艺将氮合并到电介质膜中以形成氮氧化硅膜。氧氮化硅膜在第一环境中退火。第一环境包括在第一温度下具有第一分压氧的惰性环境。然后将氧氮化硅膜在包含第二分压的第二温度下在第二温度下退火。氧的第二分压大于氧的第一分压。

8. 发明申请

WO2007118031A2 SILICON OXYNITRIDE GATE DIELECTRIC FORMATION USING MULTIPLE ANNEALING STEPS 审中-公开
标题翻译：硅氧氮化栅栅介质的形成采用多次退火步骤
公开(公告)号：WO2007118031A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/065650
申请日：2007-03-30
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher, S.
发明人： OLSEN, Christopher, S.
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02323 , H01L21/02329 , H01L21/02337 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/67207 , H01L29/518
摘要： A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pressure of about 1 to about 100 mTorr, and the second anneal step includes annealing the silicon oxynitride film with oxygen gas that has a flow rate of about 1 slm. The first anneal step is performed at a higher chamber temperature and higher chamber pressure than the second anneal step.
摘要翻译：用于处理腔室中的半导体衬底的方法包括使用两步骤退火工艺形成氧氮化硅膜。第一退火步骤包括在分压为约1mTorr至约100mTorr的氧化气体存在下对氧氮化硅膜进行退火，并且第二退火步骤包括用氮气对氧氮化硅膜进行退火，氧气的流量为约1 slm。第一次退火步骤是在比第二次退火步骤更高的室温和更高的室压下进行的。

9. 发明申请

WO2019139761A1 ARGON ADDITION TO REMOTE PLASMA OXIDATION 审中-公开
公开(公告)号：WO2019139761A1
公开(公告)日：2019-07-18
申请号：PCT/US2018/066650
申请日：2018-12-20
申请人： APPLIED MATERIALS, INC.
发明人： LO, Hansel , OLSEN, Christopher, S. , SHONO, Eric, Kihara , SWENBERG, Johanes, S. , HANSEN, Erika , KIM, Taewan , HAWRYLCHAK, Lara
IPC分类号： H01L21/02
摘要： Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.

10. 发明申请

WO2017210263A1 HIGH PRESSURE AMMONIA NITRIDATION OF TUNNEL OXIDE FOR 3DNAND APPLICATIONS 审中-公开
标题翻译：用于三维和三维应用的高压氨氧化隧道式氧化物
公开(公告)号：WO2017210263A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/035151
申请日：2017-05-31
申请人： APPLIED MATERIALS, INC.
发明人： OLSEN, Christopher, S.
IPC分类号： H01L21/02 , C23C8/36 , H01L21/28 , H01L21/67 , H01L21/324
CPC分类号： C23C8/36 , C23C8/02 , H01L21/02323 , H01L21/0234 , H01L21/3115 , H01L21/76814 , H01L21/76816 , H01L21/76826 , H01L21/76831 , H01L27/115
摘要： Embodiments disclosed herein generally related to system for forming a semiconductor structure. The processing chamber includes a chamber body, a substrate support device, a quartz envelope, one or more heating devices, a gas injection assembly, and a pump device. The chamber body defines an interior volume. The substrate support device is configured to support one or more substrates during processing. The quartz envelope is disposed in the processing chamber. The quartz envelope is configured to house the substrate support device. The heating devices are disposed about the quartz envelope. The gas injection assembly is coupled to the processing chamber. The gas injection assembly is configured to provide an NH?3#191 gas to the interior volume of the processing chamber. The pump device is coupled to the processing chamber. The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm.
摘要翻译：这里公开的实施例总体上涉及用于形成半导体结构的系统。处理腔室包括腔室主体，基板支撑装置，石英外壳，一个或多个加热装置，气体注入组件和泵装置。腔室主体限定了内部容积。衬底支撑装置被构造成在处理期间支撑一个或多个衬底。石英外壳设置在处理室中。石英外壳被配置为容纳衬底支撑装置。加热装置设置在石英外壳周围。气体注入组件连接到处理室。气体注入组件构造成向处理室的内部空间提供NH 3 3'191气体。泵装置联接到处理室。泵装置被配置为将处理室保持在至少10个大气压下。

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