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1. 发明申请

WO2013163343A1 METHODS OF FABRICATING DIELECTRIC FILMS FROM METAL AMIDINATE PRECURSORS 审中-公开
标题翻译：从金属氨基酸前驱体制备电介质膜的方法
公开(公告)号：WO2013163343A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/038063
申请日：2013-04-24
申请人： APPLIED MATERIALS, INC. , HUNG, Steven , NOORI, Atif , SENZAKI, Yoshihide , THOMPSON, David
发明人： HUNG, Steven , NOORI, Atif , SENZAKI, Yoshihide , THOMPSON, David
IPC分类号： C23C16/448 , C23C16/44 , H01L21/205
CPC分类号： H01L21/02565 , C23C16/40 , C23C16/45531 , C23C16/45553 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02274 , H01L21/0228 , H01L21/28194 , H01L29/517
摘要： Described are methods for atomic layer deposition of films comprising mixed metal oxides using metal amidinate precursors. The mixed metal oxide films may comprise a lanthanide and a transition metal such as hafnium, zirconium or titanium. Such mixed metal oxide films may be used as dielectric layers in capacitors, transistors, dynamic random access memory cells, resistive random access memory cells, flash memory cells and display panels.
摘要翻译：描述了使用金属脒前体的包含混合金属氧化物的膜的原子层沉积的方法。混合的金属氧化物膜可以包含镧系元素和过渡金属如铪，锆或钛。这种混合金属氧化物膜可以用作电容器，晶体管，动态随机存取存储器单元，电阻随机存取存储器单元，闪存单元和显示面板中的介电层。

2. 发明申请

WO2012145196A2 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILMS 审中-公开
标题翻译：制造高介电常数膜的方法
公开(公告)号：WO2012145196A2
公开(公告)日：2012-10-26
申请号：PCT/US2012/032902
申请日：2012-04-10
申请人： APPLIED MATERIALS, INC. , KIM, Hyungjun , KIM, Woo-Hee , KIM, Min-Kyu , HUNG, Steven , NOORI, Atif , THOMPSON, David , ANTHIS, Jeffrey W.
发明人： KIM, Hyungjun , KIM, Woo-Hee , KIM, Min-Kyu , HUNG, Steven , NOORI, Atif , THOMPSON, David , ANTHIS, Jeffrey W.
IPC分类号： H01L21/31 , H01L21/8238
CPC分类号： H01L21/02189 , C23C16/40 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/28194 , H01L29/517
摘要： Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.
摘要翻译：提供了在衬底上沉积含有高k电介质膜的铈掺杂铪的方法。具体方法的试剂包括四氯化铪，铈和水的有机金属络合物。

3. 发明申请

WO2014066792A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 审中-公开
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：WO2014066792A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066866
申请日：2013-10-25
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
发明人： FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten- containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCI 5 or WCI 6 .
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCI5或WCI6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

4. 发明申请

WO2014008365A1 DEPOSITION OF N-METAL FILMS COMPRISING ALUMINUM ALLOYS 审中-公开
标题翻译：包含铝合金的N金属膜的沉积
公开(公告)号：WO2014008365A1
公开(公告)日：2014-01-09
申请号：PCT/US2013/049266
申请日：2013-07-03
申请人： APPLIED MATERIALS, INC. , GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
发明人： GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
IPC分类号： C23C16/12 , C23C16/44
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl 4 , TaCl 5 and HfCl 4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy) 3-a AlH a ]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

5. 发明申请

WO2013070702A1 DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS 审中-公开
标题翻译：金属膜的沉积使用基于ALANE的前驱体
公开(公告)号：WO2013070702A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/063870
申请日：2012-11-07
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , THOMPSON, David , ANTHIS, Jeffrey W. , CHANG, Mei , GANGULI, Seshadri , TANG, Wei , GANDIKOTA, Srinivas , NOORI, Atif
发明人： LU, Xinliang , THOMPSON, David , ANTHIS, Jeffrey W. , CHANG, Mei , GANGULI, Seshadri , TANG, Wei , GANDIKOTA, Srinivas , NOORI, Atif
IPC分类号： H01L21/205 , C23C16/22
CPC分类号： C23C16/455 , C23C16/06 , C23C16/45525 , H01L21/28562 , H01L21/76841
摘要： Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by (I) or (II) wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR' 2 ) 4 or Ta(NR' 2 ) 5 , wherein R' is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
摘要翻译：提供沉积纯金属和铝合金金属膜的方法。某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自氢化二甲基铝，与胺配位的烷烃的铝前体和具有由（I）或（II）表示的结构的化合物，其中R为 C1-C6烷基，第二前体包含金属卤化物。其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

6. 发明申请

WO2014066482A1 DEPOSITION OF FILMS COMPRISING ALUMINUM ALLOYS WITH HIGH ALUMINUM CONTENT 审中-公开
标题翻译：包含铝铝合金的膜的沉积具有高铝含量
公开(公告)号：WO2014066482A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066342
申请日：2013-10-23
申请人： APPLIED MATERIALS, INC. , THOMPSON, David , GANDIKOTA, Srinivas , LU, Xinliang , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , CHEN, Shih Chung
发明人： THOMPSON, David , GANDIKOTA, Srinivas , LU, Xinliang , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , CHEN, Shih Chung
IPC分类号： C23C30/00 , C23C26/00
CPC分类号： C23C16/30 , C23C16/45531 , C23C16/45534
摘要： Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
摘要翻译：提供的是包含铝，碳和金属的膜，其中铝以大于约16％的元素含量和小于约50％的碳的量存在。还提供了沉积它们的方法。

7. 发明申请

WO2013138216A1 APPARATUS AND PROCESS FOR ATOMIC LAYER DEPOSITION WITH HORIZONTAL LASER 审中-公开
标题翻译：用水平激光沉积原子层的装置和方法
公开(公告)号：WO2013138216A1
公开(公告)日：2013-09-19
申请号：PCT/US2013/030118
申请日：2013-03-11
申请人： APPLIED MATERIALS, INC. , THOMPSON, David , NARWANKAR, Pravin, K. , SRINIVASAN, Swaminathan , CHATTERJEE, Sukti , MAYUR, Abhilash , MAQSOOD, Kashif
发明人： THOMPSON, David , NARWANKAR, Pravin, K. , SRINIVASAN, Swaminathan , CHATTERJEE, Sukti , MAYUR, Abhilash , MAQSOOD, Kashif
IPC分类号： C23C16/50 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45548 , C23C16/483
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.
摘要翻译：提供了原子层沉积设备和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。还提供了具有细长气体喷射器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

8. 发明申请

WO2014197803A1 METHODS FOR THE DEPOSITION OF MANGANESE-CONTAINING FILMS USING DIAZABUTADIENE-BASED PRECURSORS 审中-公开
标题翻译：使用基于DIAZABADADIENE的前驱体沉积含锰膜的方法
公开(公告)号：WO2014197803A1
公开(公告)日：2014-12-11
申请号：PCT/US2014/041313
申请日：2014-06-06
申请人： APPLIED MATERIALS, INC. , THOMPSON, David , ANTHIS, Jeffrey W.
发明人： THOMPSON, David , ANTHIS, Jeffrey W.
IPC分类号： C23C16/34 , C23C16/44
CPC分类号： C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine.
摘要翻译：提供方法和前体用于使用包含基于二氮杂二丁烯的配体的金属配位络合物将包含锰的膜沉积在表面上。某些方法包括将基底表面暴露于锰前体，并将基底表面暴露于叔胺。

9. 发明申请

WO2014004949A1 DEPOSITION OF FILMS CONTAINING ALKALINE EARTH METALS 审中-公开
标题翻译：含有碱金属矿物的膜的沉积
公开(公告)号：WO2014004949A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/048420
申请日：2013-06-28
申请人： APPLIED MATERIALS, INC. , THOMPSON, David
发明人： THOMPSON, David
IPC分类号： C23C16/44 , C23C16/06
CPC分类号： C23C16/404
摘要： Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.
摘要翻译：描述了通过化学反应将金属膜沉积在基底上的方法。该方法包括：将衬底暴露于包含第2族金属的第一反应气体和包含卤化物的第二反应气体的流动，以在衬底上形成含有金属卤化物的第一层; 将衬底暴露于包含氧化剂的第三反应气体，以在衬底期间在衬底上形成含有金属过氧化物或金属氢氧化物的第二层; 将基底暴露于加热或等离子体以将金属过氧化物或金属氢氧化物转化为金属氧化物。可以重复该方法以形成没有金属碳酸盐杂质的金属氧化物膜。

10. 发明申请

WO2013039866A2 ACTIVATED SILICON PRECURSORS FOR LOW TEMPERATURE DEPOSITION 审中-公开
标题翻译：活化硅前驱体用于低温沉积
公开(公告)号：WO2013039866A2
公开(公告)日：2013-03-21
申请号：PCT/US2012/054581
申请日：2012-09-11
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy W. , SCHROEDER, Todd , THOMPSON, David , ANTHIS, Jeffrey W.
发明人： WEIDMAN, Timothy W. , SCHROEDER, Todd , THOMPSON, David , ANTHIS, Jeffrey W.
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH前体低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了其中使用卤化或氰化硅烷来沉积SiN膜的过程。等离子体处理条件可用于调整薄膜的碳，氢和/或氮含量。

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