会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • WATER VAPOR PASSIVATION OF A WALL FACING A PLASMA
    • 水汽等离子体的水蒸汽钝化
    • WO2007094961A2
    • 2007-08-23
    • PCT/US2007/002546
    • 2007-01-30
    • APPLIED MATERIALS, INC.FU, Xinyu
    • FU, Xinyu
    • H01L21/76814H01L21/02063
    • A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source (60). For each wafer, the chamber is passivated with water vapor (86) (or other gas even more chemabsorbed on plasma facing walls) passed through the remote plasma source prior to the ignition of the hydrogen plasma. The water vapor is absorbed on walls (78, 79), such as alumina and quartz parts of the remote plasma source, and forms a protective mono-layer that endures sufficiently long to protect the walls during the generation of the hydrogen plasma. Thereby, the plasma facing walls, particularly of a dielectric such as alumina, are protected from etching.
    • 从远程等离子体源(60)提供在将阻挡层涂覆到具有氢自由基的通孔中之前特别有用于低k电介质的氢等离子体清洗的腔室钝化方法。 对于每个晶片,在氢等离子体点燃之前,通过远程等离子体源的水蒸气(86)(或甚至更多化学吸附在等离子体面向墙上的其它气体)钝化室。 水蒸汽被吸收在诸如氧化铝和远程等离子体源的石英部分的壁(78,79)上,并且形成足够长的保护单层,以在氢等离子体的产生期间保护壁。 因此,保护​​等离子体面对的壁,特别是电介质如氧化铝,防止蚀刻。