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1. 发明申请

WO2003042424A1 SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING 审中-公开
标题翻译：自放电和感应耦合等离子喷溅和调光
公开(公告)号：WO2003042424A1
公开(公告)日：2003-05-22
申请号：PCT/US2002/036940
申请日：2002-11-14
申请人： APPLIED MATERIALS, INC. , DING, Peijun , TAO, Rong , XU, Zheng , LUBBEN, Daniel, C. , RENGARAJAN, Suraj , MILLER, Michael, A. , SUNDARRAJAN, Arvind , TANG, Xianmin , FORSTER, John, C. , FU, Jianming , MOSELY, Roderick, C. , CHEN, Fusen , GOPALRAJA, Praburam
发明人： DING, Peijun , TAO, Rong , XU, Zheng , LUBBEN, Daniel, C. , RENGARAJAN, Suraj , MILLER, Michael, A. , SUNDARRAJAN, Arvind , TANG, Xianmin , FORSTER, John, C. , FU, Jianming , MOSELY, Roderick, C. , CHEN, Fusen , GOPALRAJA, Praburam
IPC分类号： C23C14/34
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

2. 发明申请

WO2010059857A2 BOTTOM UP PLATING BY ORGANIC SURFACE PASSIVATION AND DIFFERENTIAL PLATING RETARDATION 审中-公开
标题翻译：底部向上镀有机表面钝化和差异镀层延迟
公开(公告)号：WO2010059857A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/065193
申请日：2009-11-19
申请人： APPLIED MATERIALS, INC. , WANG, Jenn-Yue , CHUNG, Hua , TAO, Rong , ZHANG, Hong
发明人： WANG, Jenn-Yue , CHUNG, Hua , TAO, Rong , ZHANG, Hong
IPC分类号： H01L21/288
CPC分类号： H01L21/76877 , C25D5/022 , C25D5/10 , H01L21/2885 , H01L21/321 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
摘要翻译：本发明的实施例总体上涉及用于处理半导体衬底的装置和方法。一个实施例提供了一种用于处理衬底的方法，该方法包括：在其中形成有沟槽或过孔结构的衬底上形成晶种层;用有机钝化膜涂覆晶种层的一部分;以及将沟槽或过孔结构浸入电镀溶液以在种子层上方沉积导电材料而不被有机钝化膜覆盖。

3. 发明申请

WO2012039932A3 METHODS FOR FORMING LAYERS ON A SUBSTRATE 审中-公开
公开(公告)号：WO2012039932A3
公开(公告)日：2012-03-29
申请号：PCT/US2011/050656
申请日：2011-09-07
申请人： APPLIED MATERIALS, INC. , YU, Jick M. , TAO, Rong , FU, Xinyu
发明人： YU, Jick M. , TAO, Rong , FU, Xinyu
IPC分类号： H01L21/28 , H01L21/203
摘要： Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.

4. 发明申请

WO2006126050A1 IMPROVED GRAPHICAL USER INTERFACE FOR MOBILE COMMUNICATIONS TERMINAL 审中-公开
标题翻译：改进用于移动通信终端的图形用户界面
公开(公告)号：WO2006126050A1
公开(公告)日：2006-11-30
申请号：PCT/IB2006/001272
申请日：2006-05-15
申请人： NOKIA CORPORATION , WANG, Kongqiao , TAO, Rong
发明人： WANG, Kongqiao , TAO, Rong
IPC分类号： G06F3/033 , H04M1/247
CPC分类号： H04M1/72583 , G06F3/0482 , H04M1/72522
摘要： A mobile terminal has a controller (400) , a display (436) and an input device (438) connected to the controller, and a digital object browser (450) for browsing among a plurality of available digital objects (426) . A first representation (512) and a second representation (532) of each of the digital objects are presentable on a display screen (500) . The first representations of the digital objects are presented along a predefined path (510) on the display screen, the first representation (522) of a focused one of the digital objects being shown in a focus area (520) on the display screen. For the focused digital object, the second representation (532) thereof is presented in a preview area (530) on the display screen. In response to a user input given on the input device, a desired scrolling operation is performed among the first representations presented, thereby shifting the positions of the first representations on the display screen along the path accordingly, updating the focus area to reflect a change in focus from the focused digital object to another digital object by presenting in the focus area the first representation of the other digital object, as well as updating the preview area correspondingly by presenting therein the second representation of the other digital object.
摘要翻译：移动终端具有连接到控制器的控制器（400），显示器（436）和输入设备（438）和用于在多个可用数字对象（426）之间浏览的数字对象浏览器（450）。每个数字对象的第一表示（512）和第二表示（532）可呈现在显示屏（500）上。数字对象的第一表示沿着显示屏幕上的预定义路径（510）呈现，所聚焦的一个数字对象的第一表示（522）被显示在显示屏上的对焦区域（520）中。对于聚焦的数字对象，其第二表示（532）被呈现在显示屏幕上的预览区域（530）中。响应于在输入设备上给出的用户输入，在呈现的第一表示中执行期望的滚动操作，从而相应地沿着路径移动显示屏幕上的第一表示的位置，更新聚焦区域以反映通过在对焦区域中呈现另一数字对象的第一表示，并且通过在其中呈现另一数字对象的第二表示来相应地更新预览区域，从聚焦的数字对象聚焦到另一数字对象。

5. 发明申请

WO2006126047A1 IMPROVED GRAPHICAL USER INTERFACE FOR MOBILE COMMUNICATIONS TERMINAL 审中-公开
标题翻译：改进用于移动通信终端的图形用户界面
公开(公告)号：WO2006126047A1
公开(公告)日：2006-11-30
申请号：PCT/IB2006/001217
申请日：2006-05-10
申请人： NOKIA CORPORATION , WANG, Kongqiao , TAO, Rong , HÄMÄLÄINEN, Seppo, O.
发明人： WANG, Kongqiao , TAO, Rong , HÄMÄLÄINEN, Seppo, O.
IPC分类号： G06F3/033 , H04M1/247
CPC分类号： H04M1/72544 , G06F3/0482 , H04M1/72547
摘要： A graphical user interface for an electronic apparatus such as a mobile terminal is presented. The graphical user interface gives a user access to a multi-level structure of selectable user interface items (512, 532) . The graphical user interface involves, on a display of the electronic apparatus, a focused region (520) , an unfocused region (530) and a descriptor region (540) . The focused region presents a first plurality of user interface items (512) belonging to a current level in said multi-level structure. The focused region has a focus area (524) for focusing on a desired user interface item (522) in response to user input on an input device of the electronic apparatus. The unfocused region presents a second plurality of user interface items (532) belonging to at least one level superior to the current level in the multi-level structure. The descriptor region presents descriptive information (542) about a currently focused user interface item (522) in the focus area.
摘要翻译：提出了诸如移动终端的电子设备的图形用户界面。图形用户界面使用户能够访问可选用户界面项目（512,532）的多级结构。图形用户界面在电子设备的显示器上涉及聚焦区域（520），未聚焦区域（530）和描述符区域（540）。聚焦区域呈现属于所述多级结构中的当前级别的第一多个用户界面项目（512）。聚焦区域具有焦点区域（524），用于响应于在电子设备的输入设备上的用户输入而聚焦在期望的用户界面项目（522）上。未聚焦区域呈现属于多级结构中优于当前级别的至少一个级别的第二多个用户界面项目（532）。描述符区域呈现关于焦点区域中当前聚焦的用户界面项目（522）的描述信息（542）。

6. 发明申请

WO2006022706A3 BROADBAND HOME INFORMATION CENTER 审中-公开
公开(公告)号：WO2006022706A3
公开(公告)日：2006-03-02
申请号：PCT/US2004/026033
申请日：2004-08-10
申请人： THOMSON LICENSING S.A. , LIU, Xiaodong , TAO, Rong
发明人： LIU, Xiaodong , TAO, Rong
IPC分类号： H04N7/18
摘要： There is provided a home information center for communicating with a mobile unit associated with a user. An information processing unit (11) receives audio and video signals, forwards the audio and video signals to a consumer device, receives information requests from the mobile unit, and forwards information collected in response to the information requests to the mobile unit. A plurality of field units (12), connected to the information processing unit, collect the information from a plurality of sources proximate to the plurality of field units in response to the information requests, and provide the information to the information processing unit for forwarding to the mobile unit.

7. 发明申请

WO2021211278A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2021211278A1
公开(公告)日：2021-10-21
申请号：PCT/US2021/024156
申请日：2021-03-25
申请人： APPLIED MATERIALS, INC.
发明人： CHONG, Halbert , TAO, Rong , LEI, Jianxin , WANG, Rongjun , MILLER, Keith A. , WYSOK, Irena H. , GUNG, Tza-Jing , CHEN, Xing
IPC分类号： C23C14/34 , C23C14/56 , C23C14/50 , H01J37/34
摘要： Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

8. 发明申请

WO2022150084A1 RUTHENIUM REFLOW FOR VIA FILL 审中-公开
公开(公告)号：WO2022150084A1
公开(公告)日：2022-07-14
申请号：PCT/US2021/055424
申请日：2021-10-18
申请人： APPLIED MATERIALS, INC.
发明人： LUO, Yi , TAO, Rong , WU, Liqi , LIU, Mingte , LEE, Joung Joo , GELATOS, Avgerinos V.
IPC分类号： H01L21/768 , H01L21/285
摘要： A method for forming conductive structures for a semiconductor device includes depositing a reflow material in features, e.g. vias, formed in a dielectric layer. A high melting point material is deposited in the feature and is reflowed and annealed in an ambient comprising one or more of hydrogen molecules, hydrogen ions, and hydrogen radicals at a temperature greater than 300 C to fill the feature with a reflow material.

9. 发明申请

WO2021015833A1 METHODS AND APPARATUS FOR FORMING DUAL METAL INTERCONNECTS 审中-公开
公开(公告)号：WO2021015833A1
公开(公告)日：2021-01-28
申请号：PCT/US2020/029099
申请日：2020-04-21
申请人： APPLIED MATERIALS, INC.
发明人： PARIKH, Suketu A. , TAO, Rong , SHAVIV, Roey , LEE, Joung Joo , GANGULI, Seshadri , PETHE, Shirish , GAGE, David , TANG, Jianshe , STOLFI, Michael A.
IPC分类号： H01L21/768 , H01L21/67 , H01L21/321
摘要： Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

10. 发明申请

WO2019060296A1 METHODS AND APPARATUS FOR FILLING SUBSTRATE FEATURES WITH COBALT 审中-公开
公开(公告)号：WO2019060296A1
公开(公告)日：2019-03-28
申请号：PCT/US2018/051509
申请日：2018-09-18
申请人： APPLIED MATERIALS, INC.
发明人： HOU, Wenting , LEI, Jianxin , LEE, Joung Joo , TAO, Rong
IPC分类号： H01L21/28 , H01L21/02 , H01L21/324 , H01L21/285 , C23C14/24 , C23C16/44 , H01L21/67
摘要： Methods and apparatus for filling features with cobalt are provided herein. In some embodiments, a method for processing a substrate includes: depositing a first cobalt layer via a chemical vapor deposition (CVD) process atop a substrate and within a feature disposed in the substrate; and at least partially filling the feature with cobalt or cobalt containing material by performing a plasma process in a physical vapor deposition (PVD) chamber having a cobalt target to reflow a portion of the first cobalt layer into the feature. The PVD chamber may be configured to simultaneously deposit cobalt or cobalt containing material within the feature from a cobalt target disposed in the PVD chamber.

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