专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009029901A1 PRODUCTION LINE MODULE FOR FORMING MULTIPLE SIZED PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于形成多个大小的光伏器件的生产线模块
公开(公告)号：WO2009029901A1
公开(公告)日：2009-03-05
申请号：PCT/US2008/074930
申请日：2008-08-29
申请人： APPLIED MATERIALS, INC. , BACHRACH, Robert, Z. , CHAE, Yong-Kee , CHOI, Soo, Young , DE VRIES, Nicholas, G., J. , ELGAR, Yacov , ENGLHARDT, Eric, A. , FREI, Michel, R. , GAY, Charles , HAWKINS, Parris , HO, Choi , HUNTER, James, Craig , KANKANALA, Penchala, N. , LI, Liwei , LO, Wing, Hoo , LU, Danny, Cam, Toan , MEI, Fang , MURPHY, Stephen, P. , PATEL, Srujal , SAUNDERS, Matthew, J., B. , SCHLEZINGER, Asaf , SHENG, Shuran , SU, Tzay-Fa , SULLIVAN, Jeffrey, S. , TANNER, David , TROWBRIDGE, Teresa , WALKER, Brice , WHITE, John, M. , WON, Tae, K.
发明人： BACHRACH, Robert, Z. , CHAE, Yong-Kee , CHOI, Soo, Young , DE VRIES, Nicholas, G., J. , ELGAR, Yacov , ENGLHARDT, Eric, A. , FREI, Michel, R. , GAY, Charles , HAWKINS, Parris , HO, Choi , HUNTER, James, Craig , KANKANALA, Penchala, N. , LI, Liwei , LO, Wing, Hoo , LU, Danny, Cam, Toan , MEI, Fang , MURPHY, Stephen, P. , PATEL, Srujal , SAUNDERS, Matthew, J., B. , SCHLEZINGER, Asaf , SHENG, Shuran , SU, Tzay-Fa , SULLIVAN, Jeffrey, S. , TANNER, David , TROWBRIDGE, Teresa , WALKER, Brice , WHITE, John, M. , WON, Tae, K.
IPC分类号： B26D3/06 , H01L21/00
CPC分类号： H01L21/67236 , B23K26/364 , B26F3/002 , B26F3/004 , B65G49/064 , B65G2249/02 , B65G2249/04 , C03B33/03 , C03B33/033 , H01L21/67132 , H01L21/67712 , H01L21/67715 , H01L21/67721 , H01L21/67727 , H01L21/6776 , H01L31/022425 , H01L31/03921 , H01L31/0504 , H01L31/075 , H02S50/00 , H02S50/10 , Y02E10/548 , Y02P40/57 , Y10T29/49002 , Y10T29/49355 , Y10T29/5196 , Y10T29/53113 , Y10T29/5313 , Y10T29/5317 , Y10T29/53187 , Y10T29/53365 , Y10T29/53417 , Y10T225/10 , Y10T225/325 , Y10T225/329
摘要： The present invention generally relates to a sectioning module positioned within an automated solar cell device fabrication system. The solar cell device fabrication system is adapted to receive a single large substrate and form multiple silicon thin film solar cell devices from the single large substrate.
摘要翻译：本发明一般涉及一种位于自动化太阳能电池器件制造系统内的切片模块。太阳能电池器件制造系统适于接收单个大型衬底并从单个大衬底形成多个硅薄膜太阳能电池器件。

2. 发明申请

WO2009059240A1 INTRINSIC AMORPHOUS SILICON LAYER 审中-公开
标题翻译：内在非晶硅层
公开(公告)号：WO2009059240A1
公开(公告)日：2009-05-07
申请号：PCT/US2008/082137
申请日：2008-10-31
申请人： APPLIED MATERIALS, INC. , CHOI, Soo, Young , CHAE, Yong, Kee , SHENG, Shuran , LI, Liwei
发明人： CHOI, Soo, Young , CHAE, Yong, Kee , SHENG, Shuran , LI, Liwei
IPC分类号： H01L27/144 , H01L31/06
CPC分类号： H01L31/075 , C23C16/24 , C23C16/4405 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J2237/3321 , H01L31/076 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention may include an improved thin film solar cell device that is formed by sequentially depositing an intrinsic amorphous silicon layer and an intrinsic microcrystalline silicon layer during the p-i-n or n-i-p junction formation process. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction thin film solar cell devices.
摘要翻译：本发明的实施例可以包括通过在p-i-n或n-i-p结形成过程期间依次沉积本征非晶硅层和本征微晶硅层形成的改进的薄膜太阳能电池器件。本发明的实施例还通常提供了用于形成该方法和装置的方法和装置。本发明可用于形成其它单结，串联结或多结薄膜太阳能电池器件。

3. 发明申请

WO2006057659A1 GROWTH OF CARBON NANOTUBES AT LOW TEMPERATURE ON A TRANSITION METAL LAYER 审中-公开
标题翻译：碳纳米管在低温下在过渡金属层上的生长
公开(公告)号：WO2006057659A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/012322
申请日：2005-04-12
申请人： APPLIED MATERIALS, INC. , PARK, Beom, Soo , CHOI, Soo, Young , WHITE, John, M.
发明人： PARK, Beom, Soo , CHOI, Soo, Young , WHITE, John, M.
IPC分类号： C23C16/26 , C23C16/02 , C30B25/00 , C30B29/60 , C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/36 , C30B25/005 , C30B29/02 , C30B29/605
摘要： A method for depositing carbon nanotubes on a large substrate is provided. The carbon nanotubes (308) are deposited on a plasma treated transition metal layer (302) on a substrate (301) in one aspect, the transition metal layer (302) is treated with a plasma of argon or a mixture of nitrogen and hydrogen. The carbon nanotubes are deposited by thermal chemical vapor deposition at a substrate temperature of between about 400°C and about 450°C.
摘要翻译：提供了一种在大型衬底上沉积碳纳米管的方法。在一个方面，碳纳米管（308）沉积在基板（301）上的等离子体处理的过渡金属层（302）上，过渡金属层（302）用氩气或氮气和氢气的混合物处理。通过热化学气相沉积在约400℃至约450℃的衬底温度下沉积碳纳米管。

4. 发明申请

WO2009082763A3 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
公开(公告)号：WO2009082763A3
公开(公告)日：2009-07-02
申请号：PCT/US2008/088351
申请日：2008-12-24
申请人： APPLIED MATERIALS, INC. , KUDELA, Jozef , FURUTA, Gaku , SORENSEN, Carl, A. , CHOI, Soo, Young , WHITE, John, M.
发明人： KUDELA, Jozef , FURUTA, Gaku , SORENSEN, Carl, A. , CHOI, Soo, Young , WHITE, John, M.
IPC分类号： H01L21/205 , H05H1/34
摘要： Systems, methods, and apparatus involve a plasma processing chamber (200, 200', 200'') for depositing a film (231) on a substrate (232). The plasma processing chamber (200) includes a lid assembly (214) having a ground plate (225), a backing plate (240), and a non-uniformity (201) existing between the ground plate (225) and the backing plate (240). The non-uniformity (201) may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate (225) and backing plate (240). The non-uniformity (201) may include a structure (300) or a reduced spacing (400) of non-uniform surfaces. A reduced spacing (400) of non-uniform surfaces may exist where a first distance (d1, d2) between the ground plate (225) and the backing plate (240) at a first end (402) is different from a second distance (d3) between the ground plate (225) and the backing plate (240) at a second end (404). The structure (300) may be from 2cm to 10cm thick, cover from 20% to 50% of the backing plate (240), and be located away from a discontinuity (207) existing inside the chamber (200').

5. 发明申请

WO2013133983A4 SUBSTRATE SUPPORT WITH CERAMIC INSULATION 审中-公开
公开(公告)号：WO2013133983A4
公开(公告)日：2013-09-12
申请号：PCT/US2013/027168
申请日：2013-02-21
申请人： APPLIED MATERIALS, INC. , FURUTA, Gaku , WHITE, John, M. , KURITA, Shinichi , CHOI, Soo, Young , ANWAR, Suhail , TINER, Robin, L.
发明人： FURUTA, Gaku , WHITE, John, M. , KURITA, Shinichi , CHOI, Soo, Young , ANWAR, Suhail , TINER, Robin, L.
IPC分类号： H01L21/683 , H01L21/205 , G02F1/13 , C23C16/458
摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

6. 发明申请

WO2009142911A2 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：WO2009142911A2
公开(公告)日：2009-11-26
申请号：PCT/US2009/043001
申请日：2009-05-06
申请人： APPLIED MATERIALS, INC. , WHITE, John, M. , CHOI, Soo, Young , PARK, Beom, Soo , FURUTA, Gaku , CHOI, Young, Jin , TINER, Robin, L.
发明人： WHITE, John, M. , CHOI, Soo, Young , PARK, Beom, Soo , FURUTA, Gaku , CHOI, Young, Jin , TINER, Robin, L.
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/02
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

7. 发明申请

WO2009117514A1 SUSCEPTOR WITH ROLL-FORMED SURFACE AND METHOD FOR MAKING SAME 审中-公开
标题翻译：具有辊形表面的SUSCEPTOR及其制造方法
公开(公告)号：WO2009117514A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/037557
申请日：2009-03-18
申请人： APPLIED MATERIALS, INC. , FURUTA, Gaku , ATCHLEY, David , CHOI, Soo, Young , WHITE, John, M.
发明人： FURUTA, Gaku , ATCHLEY, David , CHOI, Soo, Young , WHITE, John, M.
IPC分类号： H01L21/205 , H01L21/683 , H01L21/687
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

8. 发明申请

WO2006017136A2 PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER CURVATURE 审中-公开
标题翻译：等离子体均匀控制气体扩散器曲线
公开(公告)号：WO2006017136A2
公开(公告)日：2006-02-16
申请号：PCT/US2005/024165
申请日：2005-07-07
申请人： APPLIED MATERIALS, INC. , CHOI, Soo, Young , PARK, Beom, Soo , WHITE, John, M. , TINER, Robin, L.
发明人： CHOI, Soo, Young , PARK, Beom, Soo , WHITE, John, M. , TINER, Robin, L.
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。还提供了制造这种扩散板的方法。

9. 发明申请

WO2011087514A1 ETCH STOP MICROCRYSTALLINE THIN FILM TRANSISTOR 审中-公开
标题翻译： ETCH停止微晶薄膜晶体管
公开(公告)号：WO2011087514A1
公开(公告)日：2011-07-21
申请号：PCT/US2010/021323
申请日：2010-01-18
申请人： APPLIED MATERIALS, INC. , NOMINANDA, Helinda , WON, Tae, Kyung , CHOI, Soo, Young
发明人： NOMINANDA, Helinda , WON, Tae, Kyung , CHOI, Soo, Young
IPC分类号： H01L29/786
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78669
摘要： The present invention generally relates to a thin film transistor (TFT) and methods for its fabrication. Some TFTs have an etch stop structure formed thereon in the active channel. The etch stop structure is formed by etching a layer of etch stop material. The etching may damage the underlying microcrystalline silicon material. By depositing an amorphous silicon layer over the microcrystalline silicon, the microcrystalline silicon may be protected from damage from the etching. Additionally, the doped amorphous silicon that is used as the ohmic contact may be tailored so that the resistivity is less than 1 ohm-cm. A hydrogen or nitrogen plasma treatment of the amorphous silicon layer may also be used to improve numerous characteristics of the TFT.
摘要翻译：本发明一般涉及薄膜晶体管（TFT）及其制造方法。一些TFT在有源沟道中形成有蚀刻停止结构。通过蚀刻蚀刻停止材料层形成蚀刻停止结构。蚀刻可能损坏下面的微晶硅材料。通过在微晶硅上沉积非晶硅层，可以保护微晶硅免受蚀刻损伤。另外，可以调整用作欧姆接触的掺杂非晶硅，使电阻率小于1欧姆 - 厘米。也可以使用非晶硅层的氢或氮等离子体处理来改善TFT的许多特性。

10. 发明申请

WO2009102520A1 MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR 审中-公开
标题翻译：微晶硅薄膜晶体管
公开(公告)号：WO2009102520A1
公开(公告)日：2009-08-20
申请号：PCT/US2009/030865
申请日：2009-01-13
申请人： APPLIED MATERIALS, INC. , WON, Tae, Kyung , CHOI, Soo, Young , PARK, Beom, Soo , YIM, Dong-Kil , CHEN, Jriyan, Jerry
发明人： WON, Tae, Kyung , CHOI, Soo, Young , PARK, Beom, Soo , YIM, Dong-Kil , CHEN, Jriyan, Jerry
IPC分类号： H01L21/205 , H01L29/78
CPC分类号： H01L29/04 , C23C16/26 , H01J37/32009 , H01J37/32357 , H01J37/32862 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/66742 , H01L29/7866
摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.
摘要翻译：提供了在薄膜晶体管结构中形成微晶硅层的方法。在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式