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    • 5. 发明申请
    • SYSTEM AND METHOD FOR CURRENT-BASED PLASMA EXCURSION DETECTION
    • 基于电流等离子体检测的系统和方法
    • WO2012039885A2
    • 2012-03-29
    • PCT/US2011049108
    • 2011-08-25
    • APPLIED MATERIALS INCCHEN JIAN JAYOUB MOHAMAD A
    • CHEN JIAN JAYOUB MOHAMAD A
    • H05H1/46C23C16/50H01L21/3065
    • H01J37/32935H01J37/32183
    • A system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring RF current just prior to reaching an RF power electrode of a plasma processing chamber is provided. The monitored RF current may be converted to an RF voltage and then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In one embodiment, the RF current amplified and converted to a digital signal for digital filtering and processing. In certain embodiments, multiple processing regions can be monitored by a single detection control unit.
    • 提供了一种用于在等离子体处理期间通过在到达等离子体处理室的RF功率电极之前直接监视RF电流来检测诸如电弧,微弧或其他等离子体不稳定性的等离子体偏移的系统和方法。 监控的RF电流可以转换成RF电压,然后通过一系列模拟滤波器和放大器,以提供等离子体偏移信号。 将等离子体偏移信号与预设值进行比较,并且在等离子体偏移信号超过预设值的点处,产生报警信号。 然后将报警信号反馈回系统控制器,以便可以警告操作员和/或处理系统被关闭。 在一个实施例中,RF电流被放大并转换成用于数字滤波和处理的数字信号。 在某些实施例中,多个处理区域可以由单个检测控制单元监视。
    • 6. 发明申请
    • INDUCTIVE PLASMA PROCESSOR HAVING COIL WITH PLURAL WINDINGS AND METHOD OF CONTROLLING PLASMA DENSITY
    • 具有多个绕组的线圈的电感等离子体处理器和控制等离子体密度的方法
    • WO02080221B1
    • 2002-11-28
    • PCT/US0209565
    • 2002-03-29
    • LAM RES CORPCHEN JIAN JVELTROP ROBERT GWICKER THOMAS E
    • CHEN JIAN JVELTROP ROBERT GWICKER THOMAS E
    • H01J37/32
    • H01J37/32174H01J37/321
    • An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having different couplings to different regions of plasma in the chamber to control plasma flux distribution incident on a processed workpiece. The coil is powered by a single radio frequency generator via a single matching network. Input and output ends of each winding are respectively connected to input and output tuning capacitors. In a first embodiment, the location of maximum inductive coupling of the radio frequency to the plasma and the current magnitude in each winding are respectively mainly determined by values of the output and input capacitors. By adjusting all the input and output capacitors simultaneously, the current to a winding can be varied while the current to the other winding can be maintained constant as if these windings were completely de-coupled andindependent. Therefore, the capacitors can control the plasma density in different radial and azimuthal regions. In another embodiment, a relatively low frequency drives the coil whereby each winding has a relatively short electrical length, causing substantially small standing wave current and voltage variations. The output capacitor for each winding adjusts current magnitude, to eliminate the need for the input capacitors and reduce operational complexity.
    • 感应等离子体处理器包括具有多个并联的空间上同心的绕组(1)的多绕组射频线圈,其具有提供给它们的不同量的RF功率,以及(2)被布置成产生具有不同耦合到不同等离子体区域的电磁场 该室用于控制入射在加工工件上的等离子体通量分布。 线圈由单个射频发生器通过单个匹配网络供电。 每个绕组的输入和输出端分别连接到输入和输出调谐电容器。 在第一实施例中,射频与等离子体的最大电感耦合的位置和每个绕组中的电流大小分别主要由输出和输入电容器的值决定。 通过同时调节所有输入和输出电容器,可以改变绕组的电流,同时可以保持恒定的电流到同一绕组的电流,就好像这些绕组完全去耦合和独立的一样。 因此,电容器可以控制不同径向和方位区域的等离子体密度。 在另一个实施例中,较低频率驱动线圈,由此每个绕组具有相对较短的电长度,导致基本上较小的驻波电流和电压变化。 每个绕组的输出电容器调整电流幅值,以消除对输入电容器的需要,降低操作复杂度。
    • 7. 发明申请
    • CHAMBER CONFIGURATION FOR CONFINING A PLASMA
    • 用于限制等离子体的室内配置
    • WO0227755A3
    • 2002-08-08
    • PCT/US0130098
    • 2001-09-25
    • LAM RES CORPCHEN JIAN JSRINIVASAN MUKUNDLENZ ERIC H
    • CHEN JIAN JLENZ ERIC H
    • H05H1/46B01J19/08C23F4/00H01J37/32H01L21/205H01L21/3065
    • H01J37/32871H01J37/32082H01J37/32623
    • A plasma confining assembly for minimizing unwanted plasma formations in regions outside of a process region in a process chamber is disclosed. The plasma confining assembly includes a first confining element and second confining element positioned proximate the periphery of the process region. The second confining element is spaced apart from the first confining element. The first confining element includes an exposed conductive surface that is electrically grounded and the second confining element includes an exposed insulating surface, which is configured for covering a conductive portion that is electrically grounded. The first confining element and the second confining element substantially reduce the effects of plasma forming components that pass therebetween. Additionally, the plasma confining assembly may include a third confining element, which is formed from an insulating material and disposed between the first confining element and the second confining element, and proximate the periphery of the process region. The third confining element further reduces the effects of plasma forming components that pass between the first confining element and the second confining element.
    • 公开了一种等离子体约束组件,用于最小化处理室中处理区域外部区域中的不需要的等离子体形成。 等离子体约束组件包括第一约束元件和第二约束元件,第一约束元件和第二约束元件位于过程区域的外围附近。 第二约束元件与第一约束元件间隔开。 第一限制元件包括电接地的暴露的导电表面,并且第二限制元件包括暴露的绝缘表面,该绝缘表面被配置用于覆盖电接地的导电部分。 第一限制元件和第二限制元件基本上减小了在其间穿过的等离子体形成部件的影响。 另外,等离子体约束组件可以包括第三约束元件,该第三约束元件由绝缘材料形成并且布置在第一约束元件和第二约束元件之间并且靠近处理区域的外围。 第三限制元件进一步减小了在第一限制元件和第二限制元件之间通过的等离子体形成部件的影响。
    • 8. 发明申请
    • STACKED RF EXCITATION COIL FOR INDUCTIVE PLASMA PROCESSOR
    • 用于感应等离子体处理器的堆叠式射频激励线圈
    • WO02080219B1
    • 2002-12-05
    • PCT/US0209563
    • 2002-03-29
    • LAM RES CORPCHEN JIAN JVELTROP ROBERT GWICKER THOMAS E
    • CHEN JIAN JVELTROP ROBERT GWICKER THOMAS E
    • H05H1/46H01J37/32H01L21/205H01L21/3065
    • H01J37/321
    • A radio frequency excitation coil of an inductive plasma processor includes a planar turn (103) connected in series with a segment (115) of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency coupling to plasma due to azimuthal asymmetries in the chamber and/or the excitation coil. In a single winding embodiment, the stacked segment is close to an interconnection gap between two adjacent planar turns and extends in both directions from the gap to compensate low radio frequency coupling to plasma in the gap region. In an embodiment including two electrically parallel spatially concentric windings, the stacked segment extends beyond one side of an interconnection gap of two adjacent turns, and is aligned with the planar turn such that one end of the stacked segment is directly connected to an end of the planar turn via a straight, short stub. Terminal (111) of the coil is connected to RF excitation circuitry (28) terminals in a housing above the coil by leads (128) extending smoothly and gradually without sharp bends between the coil terminals and the excitation circuitry terminals. Ends of the planar turn (113) and the stacked segment are connected by a lead (116) extending smoothly and gradually without sharp bends between its ends.
    • 感应等离子体处理器的射频激励线圈包括与堆叠在平面转弯的一部分上方的线圈的区段(115)串联连接的平坦转弯(103)。 由于腔室和/或激励线圈中的方位角不对称,堆叠的节段被放置在具有与等离子体耦合的弱射频的区域周围。 在单绕组实施例中,堆叠段接近两个相邻平面线匝之间的互连间隙并且从间隙沿两个方向延伸以补偿间隙区域中与等离子体的低射频耦合。 在包括两个电并联的空间同心绕组的实施例中,堆叠节段延伸超过两个相邻匝的互连间隙的一侧,并且与平面匝对齐,使得堆叠节段的一端直接连接到 通过一个直的,短的平头转弯。 线圈的端子(111)通过在线圈端子和激励电路端子之间平滑且逐渐延伸而没有急剧弯曲的引线(128)连接到线圈上方壳体中的RF激励电路(28)端子。 平面转弯(113)和堆叠部分的端部通过在其端部之间没有急剧弯曲地平稳且逐渐延伸的引线(116)连接。