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1. 发明申请

WO0157289B1 DEVICE AND METHOD FOR DEPOSITING ONE OR MORE LAYERS ONTO A SUBSTRATE 审中-公开
标题翻译：装置和方法的一个或更多层上的基底间距
公开(公告)号：WO0157289B1
公开(公告)日：2002-02-07
申请号：PCT/EP0101103
申请日：2001-02-02
申请人： AIXTRON AG , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , STRAUCH GERD , DAUELSBERG MARTIN , JUERGENSEN HOLGER
发明人： SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , STRAUCH GERD , DAUELSBERG MARTIN , JUERGENSEN HOLGER
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45574 , C23C16/45514 , C23C16/4557 , C23C16/45572 , Y10T117/10 , Y10T117/1016
摘要： The invention relates to a device and method for depositing one or more layers onto at least one substrate (2) placed inside a reaction chamber (1). The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit (8) to the reaction chamber (1) where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit though closely arranged outlet openings while also being spatial separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.
摘要翻译：本发明涉及一种装置和方法，用于在反应室（1）设置的基板（2），使用液体或固体原料的反应气体中的一种使用，在至少一个沉积一个或多个层，其通过气体入口部的装置（8）所述反应室（1）被馈送，在那里它们凝结在衬底或外延上。具有多个缓冲器的体积，其中所述反应气体单独输入，并且还通过在空间上紧密间隔的出口开口分离出来的气体导入部。因为它们通过气体入口部行进的反应气体被加热。

2. 发明申请

WO0155478A2 METHOD AND DEVICE FOR DEPOSITING A PRECURSOR ON A SUBSTRATE, SAID PRECURSOR BEING PRESENT IN THE LIQUID FORM 审中-公开
标题翻译：方法和设备对该前驱物在衬底上的液状分离
公开(公告)号：WO0155478A2
公开(公告)日：2001-08-02
申请号：PCT/DE0100348
申请日：2001-01-29
申请人： AIXTRON AG , LINDNER JOHANNES , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , SCHIENLE FRANK , STRAUCH GERD , JUERGENSEN HOLGER
发明人： LINDNER JOHANNES , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , SCHIENLE FRANK , STRAUCH GERD , JUERGENSEN HOLGER
IPC分类号： C23C18/02 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/285 , H01L21/00
CPC分类号： C23C16/4485
摘要： Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor/s and a reaction chamber (1), wherein the substrate/s is/are arranged. The aim of the invention is to mount the layers on said substrate/s. The inventive device also comprises a conveying device (8) that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a value over a certain period, whereby the mean of said mass flow is taken and said value can be pre-determined.
摘要翻译：公开了一种用于与至少一个储库的至少一个基板上沉积以液体或溶解的形式的前体（6）至少一种本的装置（6）为或单独使用，或混合前体存在; 反应器室（1），其中，所述一个或多个基底被布置在或将被应用，层; 的输送机（8）或至少一个线的到或来自存储容器的区域促进了在其中被蒸发的一种或多种前体，和所述前体; 控制单元，其控制所述输送装置（8）。一个传感器单元（41，42）被设置用于检测前体的供给量，并且其输出信号作为实际信号施加到控制单元，并且所述控制单元控制所述输送装置以这样的方式使得本发明的特征在于前体的质量流量平均值的一定时间具有预定值。

3. 发明申请

WO0218670A2 DEVICE FOR DEPOSITING ESPECIALLY, CRYSTALLINE LAYERS ON ONE OR MORE SUBSTRATES, ESPECIALLY SUBSTRATES WHICH ARE ALSO CRYSTALLINE 审中-公开
标题翻译： DEVICE FOR分离特定的结晶层上一个或多个特定ALSO单晶衬底
公开(公告)号：WO0218670A2
公开(公告)日：2002-03-07
申请号：PCT/EP0108886
申请日：2001-08-01
申请人： AIXTRON AG , JUERGENSEN HOLGER , STRAUCH GERD , KAEPPELER JOHANNES
发明人： JUERGENSEN HOLGER , STRAUCH GERD , KAEPPELER JOHANNES
IPC分类号： C23C16/455 , C23C16/44 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/14 , C23C16/4412
摘要： The invention relates to a device for depositing especially, crystalline layers onto one or more substrates, especially substrates which are also crystalline, in a process chamber (1), using reaction gases which are guided into said process chamber (1), where they undergo pyrolytic reaction. The device comprises a reverse-heatable support plate (3) which forms a wall of the process chamber and which can especially be heated with a high frequency, consisting of especially inertly coated graphite; a gas inlet mechanism (6) which is located in the centre of the process chamber (1), said process chamber having a circular cross-section, and which is allocated to a cover plate (4) that is situated at a distance from the support plate (3); and a gas outlet ring (5) which forms the outer limit of the process chamber (1) and which has a plurality of radial gas outlets (25). According to the invention, the gas outlet ring (5) consists of solid graphite in order to keep the isothermal profile inside the process chamber as flat as possible.
摘要翻译：本发明涉及一种装置，用于通过（1）发起和热解转化有反应气体，与所述处理腔室的壁形成，向后处理室的装置在特定的结晶层上沉积一个或多个，在一个处理室（1）特别是同样的结晶基片，（4）与所述进气元件相关联的特别涂覆的内石墨尤其用高频加热的载板（3）制成，布置有在一个圆形横截面，（3）布置在所述盖板处理室（1）从所述载体板的距离具有的中心（6）和形成具有多个径向气体出口（25）的气体出口环（5）的处理室（1）的外边界。为了保持Isothermenprofil处理室内尽可能平坦，本发明提出，所述气体出口环（5）由固体石墨。

4. 发明申请

WO2004009299A2 LOADING AND UNLOADING DEVICE FOR A COATING UNIT 审中-公开
标题翻译：一种涂层装置的装载和卸载装置
公开(公告)号：WO2004009299A2
公开(公告)日：2004-01-29
申请号：PCT/EP0307244
申请日：2003-07-07
申请人： AIXTRON AG , JUERGENSEN HOLGER , KAEPPELER JOHANNES , FRANKEN WALTER
发明人： JUERGENSEN HOLGER , KAEPPELER JOHANNES , FRANKEN WALTER
IPC分类号： C23C16/44 , B65G1/00 , C23C14/56 , C23C16/458 , C23C16/54 , H01L21/673 , H01L21/683 , H01L21/687 , B25J15/00
CPC分类号： H01L21/68764 , C23C14/56 , C23C16/4585 , C23C16/54 , H01L21/67754 , H01L21/68707 , H01L21/68771
摘要： The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.
摘要翻译：本发明涉及一种用于通过自动处理机器的抓取器（2）用至少一个衬底（1）来装载和卸载涂布装置的处理室的装置。根据本发明，该设备包括夹持器中的一个（2）可攻击装载板（3），从一个边缘形成的各至少一个基板（1），其上支承点的形式（4）与各基板（1）开口相关联的（5）。此外，衬底保持器（7）与所述装载板（3），其适于基座状衬底载体被设置在该基底板被如此放置在衬底载体的表面部分具有从衬底的间隙距离，或使基板平放在一个表面部分。

5. 发明申请

WO2004009299B1 LOADING AND UNLOADING DEVICE FOR A COATING UNIT 审中-公开
公开(公告)号：WO2004009299B1
公开(公告)日：2004-05-27
申请号：PCT/EP0307244
申请日：2003-07-07
申请人： AIXTRON AG , JUERGENSEN HOLGER , KAEPPELER JOHANNES , FRANKEN WALTER
发明人： JUERGENSEN HOLGER , KAEPPELER JOHANNES , FRANKEN WALTER
IPC分类号： C23C16/44 , B65G1/00 , C23C14/56 , C23C16/458 , C23C16/54 , H01L21/673 , H01L21/683 , H01L21/687 , H01L21/00
CPC分类号： H01L21/68764 , C23C14/56 , C23C16/4585 , C23C16/54 , H01L21/67754 , H01L21/68707 , H01L21/68771
摘要： The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

6. 发明申请

WO03054921B1 METHOD FOR THE PRODUCTION OF III-V LASER COMPONENTS 审中-公开
标题翻译：的生产方法III-V激光组件光
公开(公告)号：WO03054921B1
公开(公告)日：2004-03-04
申请号：PCT/EP0212799
申请日：2002-11-15
申请人： AIXTRON AG , JUERGENSEN HOLGER , KROST ALOIS , DADGAR ARMIN
发明人： JUERGENSEN HOLGER , KROST ALOIS , DADGAR ARMIN
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , C30B25/02
CPC分类号： H01S5/32341 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01S5/021
摘要： The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved, whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN layer is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.
摘要翻译：本发明涉及一种用于制造III-V激光装置，其特征在于，在硅衬底上，一个III-V族半导体层沉积在从气态前体的反应器的工艺腔室的方法。为了提供一种生产高质量的激光的廉价的方法，本发明提出的是，在Si衬底上，特别是在Si（111）衬底第一一含Al缓冲层沉积，在其上，则III-V族半导体层，特别是 GaN层被沉积成使得它的晶格平面平行于所述衬底的所述间隙方向，以便当断裂面的衬底平面平行层的切割形成。

7. 发明申请

WO03054921A2 METHOD FOR THE PRODUCTION OF III-V LASER COMPONENTS 审中-公开
标题翻译：制造III-V激光器元件的方法
公开(公告)号：WO03054921A2
公开(公告)日：2003-07-03
申请号：PCT/EP0212799
申请日：2002-11-15
申请人： AIXTRON AG , JUERGENSEN HOLGER , KROST ALOIS , DADGAR ARMIN
发明人： JUERGENSEN HOLGER , KROST ALOIS , DADGAR ARMIN
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L
CPC分类号： H01S5/32341 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01S5/021
摘要： The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved, whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN layer is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.
摘要翻译：本发明涉及一种用于制造III-V激光器部件的方法，其中III-V半导体层从硅衬底上的气态起始材料沉积在反应器的处理室中。为了提供用于制造高质量激光器的成本有效的方法，本发明提出首先在Si衬底，特别是Si（111）衬底上沉积含Al缓冲层，其中特别是III-V半导体层 GaN层被沉积为使得其晶格平面与衬底的解理方向平行，从而在分割衬底平面平行层断裂表面时形成GaN层。

8. 发明申请

WO02058163A8 METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS 审中-公开
标题翻译：的生产方法的半导体元件
公开(公告)号：WO02058163A8
公开(公告)日：2003-03-06
申请号：PCT/EP0114614
申请日：2001-12-12
申请人： AIXTRON AG , JUERGENSEN HOLGER , ALAM ASSADULLAH , KROST ALOIS , DADGAR ARMIN , HEUKEN MICHAEL
发明人： JUERGENSEN HOLGER , ALAM ASSADULLAH , KROST ALOIS , DADGAR ARMIN , HEUKEN MICHAEL
IPC分类号： C30B29/64 , H01L21/301 , H01L21/304 , H01L33/00 , H01S5/02 , C30B25/04 , H01L21/78
CPC分类号： H01L21/304 , H01L33/0079 , H01L33/0095 , H01S5/0201
摘要： The invention relates to a method for producing small crystalline laminae, such as semiconductor elements, especially LEDs. At least one crystalline layer is deposited on a crystalline substrate, the layer(s) is/are then separated from the substrate, and the sections formed in the laminae are divided. In order to simplify the individual separation, the substrate (1) is pre-structured in fields (3) corresponding to the sections (7), and the lattice constants of the substrate (1) and the layer(s) (9, 10) are distanced from each other in such a way that separating cracks are formed on the field boundaries (4) as a result of the lattice strain.
摘要翻译：本发明涉及一种用于小晶亚麻板如半导体器件的制造方法，尤其是LED的方法，其中一种或多种结晶层沉积的结晶衬底上，然后从基材上分离所述层（一个或多个），在板上形成Teilstükke是zerteil。为了简化分离，本发明提供的是，在区段（7）的基板（1）是预结构化对应的字段（3）和以这样的方式在基板（1）和层（一个或多个）（9，10）的晶格常数彼此不同，使得在区域边界（4）根据晶格应变分离裂缝。

9. 发明申请

WO0161071B1 CONDENSATION COATING METHOD 审中-公开
标题翻译：冷凝涂装工艺
公开(公告)号：WO0161071B1
公开(公告)日：2002-11-14
申请号：PCT/EP0101698
申请日：2001-02-15
申请人： AIXTRON AG , JUERGENSEN HOLGER , KAEPPELER JOHANNES , STRAUCH GERT , SCHMITZ DIETMAR
发明人： JUERGENSEN HOLGER , KAEPPELER JOHANNES , STRAUCH GERT , SCHMITZ DIETMAR
IPC分类号： C23C14/24 , C23C14/22 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/52
CPC分类号： C23C16/45574 , C23C14/0015 , C23C14/12 , C23C14/22 , C23C14/228 , C23C16/006 , C23C16/4481 , C23C16/45565 , C23C16/4557 , C23C16/45572
摘要： A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterised in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
摘要翻译：公开的是用于制造经涂覆的基材，例如，通过“的OLED”的方法和设备，其中一个层为基板，至少由冷凝过程的装置上施加的至少，并且其中含有固体和/或用于反应气体的一部分中的至少液体前体，特别是至少一种升华源。本发明的特征在于前体源和基体之间的反应气体的温度控制，由此避免了反应气体在基体前面的冷凝。

10. 发明申请

WO2005010231A3 CVD METHOD FOR THE DEPOSITION OF AT LEAST ONE III-VN LAYER ON A SUBSTRATE 审中-公开
标题翻译：用于在衬底上至少分离一个III-V-N层的CVD工艺
公开(公告)号：WO2005010231A3
公开(公告)日：2005-03-10
申请号：PCT/EP2004051222
申请日：2004-06-24
申请人： AIXTRON AG , HEUKEN MICHAEL , DIKME YILMAZ , DESCHLER MARC , JUERGENSEN HOLGER , KALISCH HOLGER , JANSEN ROLF
发明人： HEUKEN MICHAEL , DIKME YILMAZ , DESCHLER MARC , JUERGENSEN HOLGER , KALISCH HOLGER , JANSEN ROLF
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , C23C16/02 , C23C16/30
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40
摘要： The invention relates to a CVD method for the deposition of at least one III-VN layer on a substrate, or at least one III-N layer on a substrate with a composition different from that of the layer, whereby the crystallographic properties of the substrate, at least in the region of the surface for coating, are selected such that the layer or a buffer layer on which the layer is deposited can be directly precipitated thereon. Furthermore, the substrate comprises a mechanical support and a priming sheet applied thereto and said priming sheet may be separated from the support.
摘要翻译：本发明涉及一种CVD工艺用于具有方向从所述涂料组合物，其中所述衬底的所述表面的区域中的至少所述结晶特性是涂覆的组合物偏离在衬底上沉积至少III-VN层和至少一个III-N层被选择为使得缓冲层下面的层或层直接沉积在其上; 进一步提供的是，基底由机械支撑件和施加到其上的胚板组成，并且萌发板可与支撑件分离。

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