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1. 发明申请

WO2006015915B1 DEVICE AND METHOD FOR HIGH-THROUGHPUT CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译： DEVICE AND METHOD FOR化学气相沉积的高通量
公开(公告)号：WO2006015915B1
公开(公告)日：2007-11-22
申请号：PCT/EP2005053134
申请日：2005-07-01
申请人： AIXTRON AG , BAUMANN PETER , STRYZEWSKI PIOTR , SCHUMACHER MARCUS , LINDNER JOHANNES , KUESTERS ANTONIO MESQUIDA
发明人： BAUMANN PETER , STRYZEWSKI PIOTR , SCHUMACHER MARCUS , LINDNER JOHANNES , KUESTERS ANTONIO MESQUIDA
IPC分类号： C23C16/54
CPC分类号： C23C16/458 , B05C3/18 , B05D1/36 , C23C16/45551
摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
摘要翻译：本发明涉及一种用于至少一个基板（9），在具有可动基座上的反应器壳体（2）的处理室（1,20，11，11'40，21）布置有对特定薄层沉积至少一个（20 ），其携带至少一个基板（9），并且其中处理室的多个气体供应管线（24）开放用于引入相互不同的处理气体，其含有层形成成分，这是在连续工艺步骤引入所述处理腔室的成膜组分在衬底上沉积（9）。为了提高吞吐量，它提供了处理室的多个单独的沉积腔室（11，11“），其中，用于从各气体供给管线（24，24发起单独的气体组合物在不同”）打开，并且所述基板（9）的运动基座（20）被依次的馈送到沉积有相互不同的层或层的组件。

2. 发明申请

WO2005093127A3 METHOD FOR THE DEPOSITION IN PARTICULAR OF METAL OXIDES BY NON-CONTINUOUS PRECURSOR INJECTION 审中-公开
标题翻译：除去方法尤其是金属氧化物的不连续的PRECURSORINJEKTION
公开(公告)号：WO2005093127A3
公开(公告)日：2006-04-13
申请号：PCT/EP2005051050
申请日：2005-03-09
申请人： AIXTRON AG , BAUMANN PETER , SCHUMACHER MARCUS , LINDNER JOHANNES
发明人： BAUMANN PETER , SCHUMACHER MARCUS , LINDNER JOHANNES
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/4481
摘要： The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolved in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid.
摘要翻译：本发明涉及一种用于在处理室中的至少一个基板上沉积至少一个层，其中所述层包括至少一个部件，其中，使用液体的不连续注入所述至少一个第一金属成分或溶解在液体中的第一起始材料的一个特定的温度控制的载气中被蒸发和至少一种第二组分被提供作为化学反应性原材料。至关重要的是，起始原料被交替地引入处理腔室，以使得所述第二起始材料是化学反应性的气体或化学反应性液体。

3. 发明申请

WO2005026401B1 METHOD AND DEVICE FOR DEPOSITING LAYERS USING NON-CONTINUOUS INJECTION 审中-公开
标题翻译：方法和装置分隔层使用非连续注射
公开(公告)号：WO2005026401B1
公开(公告)日：2005-08-11
申请号：PCT/EP2004052063
申请日：2004-09-07
申请人： AIXTRON AG , SCHUMACHER MARCUS , BAUMANN PETER , LINDNER JOHANNES , DESCHLER MARC
发明人： SCHUMACHER MARCUS , BAUMANN PETER , LINDNER JOHANNES , DESCHLER MARC
IPC分类号： C23C16/44 , C23C16/448 , C23C16/52
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52
摘要： The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber (2). Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber (4) by means of non-continuous injection of a liquid starting material (3) or a starting material (3) dissolved in a liquid using a respective injector unit (5). Said vapor is guided to the process chamber by means of a carrier gas (7). It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit (s), determining the time response of the flow of material through each injector unit (5). The pressure in the process chamber (2) is less than 100 mbars, the process chamber (2) is tempered and several series of layers are deposited on the substrate (1) during one process step.
摘要翻译：本发明涉及一种用于在处理腔室（2），其中所述层包含若干组件和绝缘的，钝化或具有导电性的至少一个基板上沉积至少一个层的方法和装置，由所述的液体或在不连续的注入手段部件液体溶解的起始原料（3）通过在温度受控的蒸发室（4）的相应的喷射器（5）的装置被蒸发，并通过载气的蒸汽（7）的处理腔室被供给。该质量的时间进程通过每个喷射器流（5）确定质量流量的参数，例如注射的形式中，喷射频率和脉冲/间歇比，以及脉冲/间歇的其他喷射器单元的脉冲/间歇的相位关系（一个或多个）它是必不可少单独地设置或改变。还提供的是，在处理室（2）中的压力是低于100毫巴，所述处理室（2）被加热和被在处理期间分离步骤多个层序列的衬底（1）上。

4. 发明申请

WO2006063958A3 METHOD FOR PRODUCING AN ELECTRODE 审中-公开
标题翻译：方法制造电极
公开(公告)号：WO2006063958A3
公开(公告)日：2006-11-02
申请号：PCT/EP2005056552
申请日：2005-12-07
申请人： AIXTRON AG , BAUMANN PETER , LINDNER JOHANNES , SCHUMACHER MARCUS
发明人： BAUMANN PETER , LINDNER JOHANNES , SCHUMACHER MARCUS
IPC分类号： H01L29/49 , H01L21/28 , H01L21/285
CPC分类号： H01L27/10873 , H01L21/28088 , H01L27/1085 , H01L29/4966
摘要： The invention relates to a method for producing an electrode (1), which interacts with an active layer (8) of a semiconductor component or dielectric. The working function (Wf) of the electrode (1) is adapted to the position of the energy bands (Ec, Ev) in the layer (8) while taking into account the layer property, particularly the doping of the layer (8). The process is rendered economical by virtue of the fact that a metal/non-metal combination is selected as the electrode material, and the working function (F) is set by varying at least one non-metallic component.
摘要翻译：本发明涉及一种用于制造电极（1），其与活性层相互作用（8）的半导体器件或电介质，（1）（考虑到层属性的电极的功函数（WF），特别是层8的掺杂）（在能带的Ec，EV）的位置适合于在层（8）。该过程是在一个金属/非金属化合物经济被选择作为电极材料，并通过改变至少一个非金属成分的功函数（F）被调整。

5. 发明申请

WO2005026401A2 METHOD AND DEVICE FOR DEPOSITING SINGLE COMPONENT OR MULTICOMPONENT LAYERS AND SERIES OF LAYERS USING NON-CONTINUOUS INJECTION OF LIQUID AND DISSOLVED STARTING MATERIAL BY A MULTI-CHANNEL INJECTION UNIT 审中-公开
标题翻译： METHOD AND APPARATUS FOR OUT SEPARATING单或多组分的层和后续层中使用液体非连续注入和溶解的物质上的多通道注射装置
公开(公告)号：WO2005026401A2
公开(公告)日：2005-03-24
申请号：PCT/EP2004052063
申请日：2004-09-07
申请人： AIXTRON AG , SCHUMACHER MARCUS , BAUMANN PETER , LINDNER JOHANNES , DESCHLER MARC
发明人： SCHUMACHER MARCUS , BAUMANN PETER , LINDNER JOHANNES , DESCHLER MARC
IPC分类号： C23C16/44 , C23C16/448 , C23C16/52 , C23C
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52
摘要： The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber (2). Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber (4) by means of non-continuous injection of a liquid starting material (3) or a starting material (3) dissolved in a liquid using a respective injector unit (5). Said vapor is guided to the process chamber by means of a carrier gas (7). It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit (s), determining the time response of the flow of material through each injector unit (5). The pressure in the process chamber (2) is less than 100 mbars, the process chamber (2) is tempered and several series of layers are deposited on the substrate (1) during one process step.
摘要翻译：本发明涉及一种用于在处理腔室（2），其中所述层包含若干组件和绝缘的，钝化或具有导电性的至少一个基板上沉积至少一个层的方法和装置，由所述的液体或在不连续的注入手段部件液体溶解的起始原料（3）通过在温度受控的蒸发室（4）的相应的喷射器（5）的装置被蒸发，并通过载气的蒸汽（7）的处理腔室被供给。该质量的时间进程通过每个喷射器流（5）确定质量流量的参数，例如注射的形式中，喷射频率和脉冲/间歇比，以及脉冲/间歇的其他喷射器单元的脉冲/间歇的相位关系（一个或多个）它是必不可少单独地设置或改变。还提供的是，在处理室（2）中的压力是低于100毫巴，所述处理室（2）被加热和被在处理期间分离步骤多个层序列的衬底（1）上。

6. 发明申请

WO0155478A2 METHOD AND DEVICE FOR DEPOSITING A PRECURSOR ON A SUBSTRATE, SAID PRECURSOR BEING PRESENT IN THE LIQUID FORM 审中-公开
标题翻译：方法和设备对该前驱物在衬底上的液状分离
公开(公告)号：WO0155478A2
公开(公告)日：2001-08-02
申请号：PCT/DE0100348
申请日：2001-01-29
申请人： AIXTRON AG , LINDNER JOHANNES , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , SCHIENLE FRANK , STRAUCH GERD , JUERGENSEN HOLGER
发明人： LINDNER JOHANNES , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , SCHIENLE FRANK , STRAUCH GERD , JUERGENSEN HOLGER
IPC分类号： C23C18/02 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/285 , H01L21/00
CPC分类号： C23C16/4485
摘要： Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor/s and a reaction chamber (1), wherein the substrate/s is/are arranged. The aim of the invention is to mount the layers on said substrate/s. The inventive device also comprises a conveying device (8) that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a value over a certain period, whereby the mean of said mass flow is taken and said value can be pre-determined.
摘要翻译：公开了一种用于与至少一个储库的至少一个基板上沉积以液体或溶解的形式的前体（6）至少一种本的装置（6）为或单独使用，或混合前体存在; 反应器室（1），其中，所述一个或多个基底被布置在或将被应用，层; 的输送机（8）或至少一个线的到或来自存储容器的区域促进了在其中被蒸发的一种或多种前体，和所述前体; 控制单元，其控制所述输送装置（8）。一个传感器单元（41，42）被设置用于检测前体的供给量，并且其输出信号作为实际信号施加到控制单元，并且所述控制单元控制所述输送装置以这样的方式使得本发明的特征在于前体的质量流量平均值的一定时间具有预定值。

7. 发明申请

WO0157289B1 DEVICE AND METHOD FOR DEPOSITING ONE OR MORE LAYERS ONTO A SUBSTRATE 审中-公开
标题翻译：装置和方法的一个或更多层上的基底间距
公开(公告)号：WO0157289B1
公开(公告)日：2002-02-07
申请号：PCT/EP0101103
申请日：2001-02-02
申请人： AIXTRON AG , SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , STRAUCH GERD , DAUELSBERG MARTIN , JUERGENSEN HOLGER
发明人： SCHUMACHER MARCUS , STRZYZEWSKI PIOTR , STRAUCH GERD , DAUELSBERG MARTIN , JUERGENSEN HOLGER
IPC分类号： B01J19/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45574 , C23C16/45514 , C23C16/4557 , C23C16/45572 , Y10T117/10 , Y10T117/1016
摘要： The invention relates to a device and method for depositing one or more layers onto at least one substrate (2) placed inside a reaction chamber (1). The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit (8) to the reaction chamber (1) where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit though closely arranged outlet openings while also being spatial separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.
摘要翻译：本发明涉及一种装置和方法，用于在反应室（1）设置的基板（2），使用液体或固体原料的反应气体中的一种使用，在至少一个沉积一个或多个层，其通过气体入口部的装置（8）所述反应室（1）被馈送，在那里它们凝结在衬底或外延上。具有多个缓冲器的体积，其中所述反应气体单独输入，并且还通过在空间上紧密间隔的出口开口分离出来的气体导入部。因为它们通过气体入口部行进的反应气体被加热。

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