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1. 发明申请

WO2006015915B1 DEVICE AND METHOD FOR HIGH-THROUGHPUT CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译： DEVICE AND METHOD FOR化学气相沉积的高通量
公开(公告)号：WO2006015915B1
公开(公告)日：2007-11-22
申请号：PCT/EP2005053134
申请日：2005-07-01
申请人： AIXTRON AG , BAUMANN PETER , STRYZEWSKI PIOTR , SCHUMACHER MARCUS , LINDNER JOHANNES , KUESTERS ANTONIO MESQUIDA
发明人： BAUMANN PETER , STRYZEWSKI PIOTR , SCHUMACHER MARCUS , LINDNER JOHANNES , KUESTERS ANTONIO MESQUIDA
IPC分类号： C23C16/54
CPC分类号： C23C16/458 , B05C3/18 , B05D1/36 , C23C16/45551
摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
摘要翻译：本发明涉及一种用于至少一个基板（9），在具有可动基座上的反应器壳体（2）的处理室（1,20，11，11'40，21）布置有对特定薄层沉积至少一个（20 ），其携带至少一个基板（9），并且其中处理室的多个气体供应管线（24）开放用于引入相互不同的处理气体，其含有层形成成分，这是在连续工艺步骤引入所述处理腔室的成膜组分在衬底上沉积（9）。为了提高吞吐量，它提供了处理室的多个单独的沉积腔室（11，11“），其中，用于从各气体供给管线（24，24发起单独的气体组合物在不同”）打开，并且所述基板（9）的运动基座（20）被依次的馈送到沉积有相互不同的层或层的组件。

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