专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2016114718A1 MEMORY DEVICE AND METHOD FOR OPERATING THEREOF 审中-公开
标题翻译：存储器件及其操作方法
公开(公告)号：WO2016114718A1
公开(公告)日：2016-07-21
申请号：PCT/SG2015/050520
申请日：2015-12-31
申请人： AGENCY FOR SCIENCE,TECHNOLOGY AND RESEARCH
发明人： FOONG, Huey Chian , LI, Fei
IPC分类号： H01L27/105 , H01L27/24 , G11C11/02 , G11C11/15 , G11C11/16
CPC分类号： G11C11/1673 , G11C5/025 , G11C11/161 , G11C11/1653 , G11C11/1655 , G11C11/1675 , G11C11/1693 , H01L27/222 , H01L27/228
摘要： According to various embodiments, there is provided a memory device including at least one sense amplifier having a first side and a second side, wherein the second side opposes the first side; a first array including a plurality of memory cells arranged at the first side; a second array including a plurality of memory cells arranged at the second side; a first row including a plurality of mid-point reference units arranged at the first side; and a second row including a plurality of mid-point reference units arranged at the second side, wherein each mid-point reference unit of the first row is configured to generate a first reference voltage, and wherein each mid-point reference unit of the second row is configured to generate a second reference voltage; wherein the sense amplifier is configured to determine a resistance state of a memory cell of the first array based on the second reference voltage; wherein the sense amplifier is configured to determine a resistance state of a memory cell of the second array based on the first reference voltage.
摘要翻译：根据各种实施例，提供了一种存储器件，其包括具有第一侧和第二侧的至少一个读出放大器，其中第二侧与第一侧相对; 包括布置在第一侧的多个存储单元的第一阵列; 包括布置在第二侧的多个存储单元的第二阵列; 第一行，包括布置在第一侧的多个中点参考单元; 以及第二排，包括布置在第二侧的多个中点参考单元，其中第一行的每个中点参考单元被配置为产生第一参考电压，并且其中第二行的每个中点参考单元行被配置为产生第二参考电压; 其中所述读出放大器被配置为基于所述第二参考电压来确定所述第一阵列的存储单元的电阻状态; 其中所述读出放大器被配置为基于所述第一参考电压来确定所述第二阵列的存储单元的电阻状态。

2. 发明申请

WO2021045676A1 NEURAL NETWORK PROCESSOR SYSTEM AND METHODS OF OPERATING AND FORMING THEREOF 审中-公开
公开(公告)号：WO2021045676A1
公开(公告)日：2021-03-11
申请号：PCT/SG2019/050440
申请日：2019-09-03
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
发明人： PARAMASIVAM, Vishnu , DO, Anh Tuan , KOH, Eng Kiat , PU, Junran , LI, Fei , MANI, Aarthy
IPC分类号： G06N3/06 , G06N20/00
摘要： There is provided a neural network processor system including: a plurality of neural processing units, including a first neural processing unit and a second neural processing unit, whereby each neural processing unit comprises an array of neural processing core blocks, each neural processing core block comprising a neural processing core; and at least one central processing unit communicatively coupled to the plurality of neural processing units and configured to coordinate the plurality of neural processing units for performing neural network computations. In particular, the first and second neural processing units have a different structural configuration to each other. There is also provided a corresponding method of operating and a corresponding method of forming the neural network processor system.

3. 发明申请

WO2018136003A1 MEMORY CELL, MEMORY ARRAY, METHOD OF FORMING AND OPERATING MEMORY CELL 审中-公开
公开(公告)号：WO2018136003A1
公开(公告)日：2018-07-26
申请号：PCT/SG2018/050027
申请日：2018-01-17
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
发明人： AHMED, Karim Ali Abdeltawwab , LUA, Sunny Yan Hwee , LI, Fei
IPC分类号： G11C11/02 , H01L43/08 , G11C11/15 , G11C11/16
摘要： Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.

4. 发明申请

WO2016122406A1 MEMORY CELL SELECTOR AND METHOD OF OPERATING MEMORY CELL 审中-公开
标题翻译：存储单元选择器和操作存储单元的方法
公开(公告)号：WO2016122406A1
公开(公告)日：2016-08-04
申请号：PCT/SG2016/050035
申请日：2016-01-26
申请人： AGENCY FOR SCIENCE,TECHNOLOGY AND RESEARCH
发明人： YANG, Hongxin , LI, Minghua , HE, Wei , JIANG, Yu , LI, Fei
IPC分类号： H01L27/24 , G11C13/00 , G11C7/00 , H01L45/00
CPC分类号： G11C13/003 , G11C13/0021 , G11C13/0038 , G11C13/004 , G11C13/0069 , G11C2013/0052 , G11C2013/0092 , G11C2213/15 , G11C2213/76 , H01L27/2409 , H01L27/2418 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145
摘要： Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at.%. The chalcogenide content of the chalcogenide rich layer is greater than 50 at.%.
摘要翻译：实施例提供一种用于选择存储单元的选择器装置。选择装置包括第一电极; 第二电极; 以及夹在第一电极和第二电极之间的开关层。开关层包括至少一个金属富集层和至少一个富含硫属元素的层。富金属层包括金属或金属化合物中的至少一种，其中富金属层的金属含量大于50原子％。富硫族化物层的硫属化物含量大于50原子％。

5. 发明申请

WO2017058111A1 METHOD OF ERROR DETECTION IN A TOGGLE ELECTRIC FIELD MAGNETIC RANDOM ACCESS MEMORY (TEF-RAM) DEVICE AND TEF-RAM DEVICE 审中-公开
标题翻译：手动电磁场随机存取存储器（TEF-RAM）器件和TEF-RAM器件中的错误检测方法
公开(公告)号：WO2017058111A1
公开(公告)日：2017-04-06
申请号：PCT/SG2016/050476
申请日：2016-09-27
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
发明人： LI, Fei , LUA, Sunny Yan Hwee
IPC分类号： G11C29/04 , G11C11/16 , H01L27/24
CPC分类号： G11C29/04 , G11C11/1659 , G11C11/1673 , G11C11/1693 , G11C29/52 , H01L27/222
摘要： There is provided a method of error detection in a toggle electric field magnetic random access memory (TEF-RAM) device. The method includes performing a first read operation on a memory cell of the TEF-RAM device to obtain a first read output of the memory cell, performing a first write operation on the memory cell after the first read operation, performing a second read operation on the memory cell after the first write operation to obtain a second read output of the memory cell, and determining whether an error exists with the memory cell based on the first read output and the second read output. There is also provided an error detection module and a TEF-RAM device having the error detection module.
摘要翻译：提供了一种在切换电场磁随机存取存储器（TEF-RAM）装置中的错误检测方法。该方法包括对TEF-RAM设备的存储单元执行第一读取操作以获得存储单元的第一读取输出，在第一次读取操作之后对存储器单元执行第一次写入操作，对第一次读取操作执行第二次读取操作所述存储单元在所述第一写入操作之后获得所述存储单元的第二读取输出，以及基于所述第一读取输出和所述第二读取输出来确定是否存在与所述存储单元的错误。还提供了具有错误检测模块的错误检测模块和TEF-RAM装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式