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1. 发明申请

WO1996001912A2 METAL-COATED SUBSTRATE ARTICLES RESPONSIVE TO ELECTROMAGNETIC RADIATION, AND METHOD OF MAKING AND USING THE SAME 审中-公开
标题翻译：对电磁辐射反应的金属涂层基材及其制造方法和使用方法
公开(公告)号：WO1996001912A2
公开(公告)日：1996-01-25
申请号：PCT/US1995009407
申请日：1995-07-11
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , STEVENS, Ward, C. , STURM, Edward, A.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC.
IPC分类号： C23C00/00
CPC分类号： G01S7/495 , F41J2/00 , H01Q15/145 , H01Q17/00 , Y10T428/265 , Y10T428/2944
摘要： An article (130) comprising a non-conductive substrate (136), preferably of an environmentally degradable character, having a thickness of an oxidizable metal coating (138) thereon, and optionally an oxidation enhancingly effective amount of a salt (140), e.g., from about 0.005 to about 25 % by weight of salt, based on the weight of oxidizable metal, present on the oxidizable metal coating. Also disclosed is a related method of forming such article, comprising chemical vapor depositing the oxidizable metal coating on the substrate. When utilized in a form comprising fine-diameter substrate elements such as filaments, the resulting product may be usefully employed as an "evanescent" chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidization of the oxidizable metal coating so that the conductivity and radar absorbance/reflectance characteristics of the chaff transiently decays. The chaff may be packaged for use in a cartridge (120) or the chaff may be provided by precursor roving packages (204) which are cut to the desired dipole length by a suitable cutter device (200) for dissemination to the locus of use.
摘要翻译：一种制品（130），其包括优选具有环境可降解特性的非导电基底（136），其具有其上的可氧化金属涂层（138）的厚度，以及任选的氧化增强有效量的盐（140），例如，约0.005至约25重量％的盐，基于可氧化金属的重量，存在于可氧化金属涂层上。还公开了形成这种制品的相关方法，包括在基底上化学气相沉积可氧化金属涂层。当以包括诸如细丝的细直径基底元件的形式使用时，所得产品可有效地用作“渐逝”谷物。在大气湿度的存在下，这种消逝的小麦经历可氧化金属涂层的氧化，使得谷壳的电导率和雷达吸收/反射特性瞬间衰减。所述谷壳可以被包装以用于盒（120）中，或者所述谷壳可以由通过合适的切割装置（200）切割成所需偶极长度的前体粗纱包装（204）提供，以便传播到使用场所。

2. 发明申请

WO1996041906A1 BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME 审中-公开
标题翻译：大块单晶氮化镓及其制造方法
公开(公告)号：WO1996041906A1
公开(公告)日：1996-12-27
申请号：PCT/US1995007518
申请日：1995-06-13
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , TISCHLER, Michael, A. , KUECH, Thomas, F.
IPC分类号： C30B33/08
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406
摘要： A method of making a single crystal Ga*N article (10), including the steps of: providing a substrate (20) of crystalline material having a surface (16) which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N (26) over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.
摘要翻译：一种制备单晶Ga * N制品（10）的方法，包括以下步骤：提供具有与Ga * N外延相容的表面（16）的晶体材料的衬底（20）; 在衬底的表面上沉积一层单晶Ga * N（26）; 并从该单晶Ga * N层中蚀刻除去衬底，得到作为单晶Ga * N制品的单晶Ga * N层。本文中的本发明涉及体积单晶Ga * N制品，例如适合用作其上制造微电子结构的衬底，以及包括大块单晶Ga * N衬底及其前体结构的微电子器件。

3. 发明申请

WO1996040505A1 INFRARED RADIATION-INTERACTIVE ARTICLE, AND METHOD OF GENERATING A TRANSIENT INFRARED RADIATION RESPONSE 审中-公开
标题翻译：红外辐射交互文章和产生瞬态红外辐射响应的方法
公开(公告)号：WO1996040505A1
公开(公告)日：1996-12-19
申请号：PCT/US1996009020
申请日：1996-06-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , STEVENS, Ward, C. , STURM, Edward, A.
IPC分类号： B32B07/12
CPC分类号： F41J2/00 , F41H3/00 , G01S7/495 , H01Q15/145 , H01Q17/00 , Y10T428/265 , Y10T428/2904 , Y10T428/2913 , Y10T428/2918 , Y10T428/2933 , Y10T428/294 , Y10T428/2944 , Y10T428/2949 , Y10T428/2958 , Y10T428/2964
摘要： An infrared radiation-interactive article (10) comprising an oxidizable metal body (18) of a radiation-interactive size and shape, with an oxidation-promoting salt (20) in contact with the metal body (18), arranged so that in exposure to ambient moisture, the metal body (18) is oxidizable to a radiation non-interactive form. The article (10) of the invention may be employed to carry out a method of generating a transient radiation response, e.g., an infrared radiation reflectance signature, or infrared radiation absorption, at a selected locus receiving radiation incident thereon, by disposing at the locus a radiation interactively-effective amount of such radiation-interactive article (10), for positional location determination applications.
摘要翻译：一种红外辐射交互制品（10），包括具有辐射交互尺寸和形状的可氧化金属体（18），其与所述金属体（18）接触的氧化促进盐（20）被布置为使得在暴露对于环境湿度，金属体（18）可氧化成辐射非交互形式。本发明的物品（10）可以用于在所选择的轨道上产生瞬时辐射响应（例如，红外线辐射反射特征或红外辐射吸收）的方法，该方法通过在所述场地用于位置定位应用的辐射交互式物品（10）的辐射交互有效量。

4. 发明申请

WO1995020695A1 METHOD OF MAKING SINGLE CRYSTAL GALLIUM NITRIDE 审中-公开
标题翻译：制备单晶氮化镓的方法
公开(公告)号：WO1995020695A1
公开(公告)日：1995-08-03
申请号：PCT/US1995000868
申请日：1995-01-26
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , TISCHLER, Michael, A. , KUECH, Thomas, F.
IPC分类号： C30B33/08
CPC分类号： C30B33/00 , B82Y15/00 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02439 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/02529 , H01L21/0254 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/915 , Y10T428/13 , Y10T428/21
摘要： A method of making a single crystal Ga*N article (10), including the steps of: providing a substrate (20) of crystalline material having a surface (16) which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N (26) over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention is an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.
摘要翻译：一种制备单晶Ga * N制品（10）的方法，包括以下步骤：提供具有与Ga * N外延相容的表面（16）的晶体材料的衬底（20）; 在衬底的表面上沉积一层单晶Ga * N（26）; 并从该单晶Ga * N层中蚀刻除去衬底，得到作为单晶Ga * N制品的单晶Ga * N层。本发明是涉及本体单晶Ga * N制品的文章方面，例如适用于其上用于制造微电子结构的衬底，以及涉及包括大块单晶Ga * N衬底的微电子器件及其前体结构。

5. 发明申请

WO1990007971A1 SORPTION OF GASEOUS COMPOUNDS OF GROUPS II-VII ELEMENTS 审中-公开
标题翻译：组合II-VII元素的气体化合物的吸附
公开(公告)号：WO1990007971A1
公开(公告)日：1990-07-26
申请号：PCT/US1990000244
申请日：1990-01-10
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , TOM, Glenn, M. , McMANUS, James, V. , LUXON, Bruce, A.
IPC分类号： B01D53/04
CPC分类号： B01D53/0446 , B01D53/02 , B01D53/0438 , B01D53/0454 , B01D2251/10 , B01D2251/302 , B01D2251/304 , B01D2251/306 , B01D2251/402 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/1122 , B01D2253/202 , B01D2253/204 , B01D2253/25 , B01D2253/308 , B01D2255/2022 , B01D2255/2025 , B01D2255/2027 , B01D2257/204 , B01D2257/304 , B01D2257/306 , B01D2257/406 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2257/60 , B01D2257/602 , B01D2257/70 , B01D2257/704 , B01D2257/706 , B01D2257/93 , B01D2258/0216 , B01D2259/40003 , B01D2259/40084 , B01D2259/4146 , B01J20/046 , B01J20/08 , B01J20/223 , B01J20/261 , B01J20/264 , B01J20/284 , B01J20/3204 , B01J20/321 , B01J20/3217 , B01J20/3265 , C01B6/065 , C01B21/0427 , C01B23/00 , C01B25/06
摘要： Scavenger compositions have utility for effecting the sorptive removal of hazardous gases containing Group II-VII elements of the Periodic Table, such as are widely encountered in the manufacture of semiconducting materials and semiconducter devices. Gas sorption processes include contacting of Group II-VII gaseous compounds with these scavenger compositions, gas contacting apparatus (400) include mesh structures (406) containing these scavenger compositions, to prevent solids from being introduced to or discharged from the contacting vessel (400) in the gas stream undergoing treatment. A reticulate heat transfer structure (402) dampens localized exothermic reaction fronts when gas mixtures comprising Group II-VII constituents are contacted with the scavenger compositions in bulk sorption contacting vessels (400) according to the invention.
摘要翻译：清除剂组合物具有用于实现含有元素周期表II-VII族元素的有害气体的吸附去除，例如在半导体材料和半导体器件的制造中被广泛使用。气体吸附方法包括II-VII族气态化合物与这些清除剂组合物的接触，气体接触装置（400）包括含有这些清除剂组合物的网状结构（406），以防止固体被引入或从接触容器（400）排出，在经过处理的气流中。当包含II-VII族组分的气体混合物与根据本发明的本体吸附接触容器（400）中的清除组合物接触时，网状传热结构（402）抑制局部放热反应前沿。

6. 发明申请

WO1997044118A1 FLUID STORAGE AND DELIVERY SYSTEM COMPRISING HIGH WORK CAPACITY PHYSICAL SORBENT 审中-公开
标题翻译：流体储存和运输系统包含高效能物理分子
公开(公告)号：WO1997044118A1
公开(公告)日：1997-11-27
申请号：PCT/IB1997000943
申请日：1997-05-20
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , TOM, Glenn, M. , OLANDER, W., Karl , McMANUS, James, V.
IPC分类号： B01D53/04
CPC分类号： F17C7/04 , B01D53/0407 , B01D2253/102 , B01D2253/304 , B01D2259/4525 , F17C11/00 , F17C2205/0338 , F17C2205/0391
摘要： An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of the sorbate gas from the sorbent material. The sorbent material preferably comprises a material which is characterized by a Sorbent Working Capacity, measured for arsine at 40 Torr and at 650 Torr, of at least 100 grams arsine per liter of bed of the sorbent material, e.g., a sorbent material having the adsorption isotherm characteristic of curve A in Figure 1.
摘要翻译：用于储存和分配可吸入气体的吸附 - 脱附装置，其中通过吸附剂气体从吸附剂材料的压差解吸和/或热解吸提供携带要选择性分配的吸附气体的物理吸附剂介质。吸附剂材料优选地包括一种材料，其特征在于吸收剂工作能力，在40托和650乇下测量的胂为至少100克胂/升吸附剂材料床，例如具有吸附剂的吸附剂材料曲线A的等温线特性如图1所示。

7. 发明申请

WO1996040690A1 METAL COMPLEX SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于化学蒸气沉积的金属复合源试剂
公开(公告)号：WO1996040690A1
公开(公告)日：1996-12-19
申请号：PCT/US1996009434
申请日：1996-06-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , KIRLIN, Peter, S. , BROWN, Duncan, W. , BAUM, Thomas, W. , VAARTSTRA, Brian, A. , GARDINER, Robin, A.
IPC分类号： C07F05/00
CPC分类号： C23C16/18 , C07F3/003 , C07F5/003 , C07F7/003 , C07F9/005 , C07F19/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula MAYX, wherein M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAy with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of beta -diketonates and their sulfur and nitrogen analogs, beta -ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种式MAYX的金属有机络合物，其中M是一个Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X络合; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

8. 发明申请

WO1996008587A1 TANTALUM AND NIOBIUM REAGENTS USEFUL IN CHEMICAL VAPOR DEPOSITION PROCESSES, AND PROCESS FOR DEPOSITING COATINGS USING THE SAME 审中-公开
标题翻译：化学气相沉积工艺中有用的钽和铌试剂，以及使用其沉积涂料的方法
公开(公告)号：WO1996008587A1
公开(公告)日：1996-03-21
申请号：PCT/US1995011633
申请日：1995-09-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , KIRLIN, Peter, S. , VAARTSTRA, Brian, A. , GORDON, Douglas , GLASSMAN, Timothy, E.
IPC分类号： C23C16/00
CPC分类号： C07F9/00 , C23C16/18 , C23C16/40 , C23C16/405
摘要： Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have the formula: M(OR )x(R -C(G)-CH-C(G)-R )5-x wherein M is tantalum or niobium; G is oxygen or sulfur; and R , R and R are independently hydrocarbyl, fluoroalkyl or alkoxy groups. The niobium and tantalum reagent liquids in a reservoir (1) flow to a high precision liquid pump (3) through a valve (2). The pump then supplies the liquid solution to a hot vaporization zone (4) to flash vaporize the reagents. The gas-phase reagent then flows to a heated substrate (7) contained in a reactor (6) via a gas line (5) and is thermally decomposed to deposit an Nb- or Ta-containing coating on the substrate.
摘要翻译：适合用作化学气相沉积源试剂的铌和钽化合物，以及使用该化合物沉积含铌或钽的涂层的方法。这些化合物具有下式：M（OR 1）x（R 2 -C（G）-CH-C（G）-R 3）5-x其中M是钽或铌; G是氧或硫; 且R 1，R 2和R 3独立地为烃基，氟烷基或烷氧基。储存器（1）中的铌和钽试剂液体通过阀（2）流向高精度液体泵（3）。泵然后将液体溶液供应到热蒸发区（4）以使试剂闪蒸。气相试剂然后通过气体管线（5）流到反应器（6）中所含的加热衬底（7），并被热分解以在衬底上沉积含Nb或Ta的涂层。

9. 发明申请

WO1994021840A1 APPARATUS AND METHOD FOR DELIVERING REAGENTS IN VAPOR FORM TO A CVD REACTOR 审中-公开
标题翻译：用于将蒸气形式的试剂递送至CVD反应器的装置和方法
公开(公告)号：WO1994021840A1
公开(公告)日：1994-09-29
申请号：PCT/US1994002512
申请日：1994-03-07
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , KIRLIN, Peter, S. , GARDINER, Robin, A. , VAN BUSKIRK, Peter
发明人： ADVANCED TECHNOLOGY MATERIALS, INC.
IPC分类号： C23C16/00
CPC分类号： C23C16/4483 , B01F3/022 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/448 , C23C16/4481 , H01L39/2441
摘要： A process system comprising a liquid reagent vaporization and supply apparatus (300) including a vaporization chamber housing (302) having a porous vaporization element (340) therein in proximity to the housing interior wall surface (320) to define liquid flow channels (332, 324, 326, 328). A pump assembly (10) may be used in such system to pump air- or moisture-sensitive liquids, in which the wetted parts of the pump are blanketed with an inert medium and/or the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to a means and method for protecting a source reagent vaporizer (17) from the harmful effects of solid build-up occurring during its use in chemical vapor deposition (CVD), due to premature decomposition of the source reagent on the vaporizer element and oxidative decomposition of the source reagent to produce solid products which cause clogging and inefficient vaporization, by periodically flush cleaning such vaporizer element to increase its consistency, reliability, and service life.
摘要翻译：一种包括液体试剂蒸发和供应装置（300）的处理系统，该装置包括在壳体内壁表面（320）附近具有多孔气化元件（340）的蒸发室壳体（302），以限定液体流动通道 324,326,328）。在这种系统中可以使用泵组件（10）来泵送空气或湿气敏感液体，其中泵的润湿部分用惰性介质和/或具有低蒸气压液体组分的处理液体覆盖用于抑制腐蚀或颗粒形成。另一方面，本发明涉及一种用于保护源试剂蒸发器（17）免受在化学气相沉积（CVD）期间发生的固体积聚的有害影响的装置和方法，这是由于源试剂的过早分解在蒸发器元件上和源试剂的氧化分解以产生固体产物，其引起堵塞和低效蒸发，通过周期性地清洗这种蒸发器元件以增加其一致性，可靠性和使用寿命。

10. 发明申请

WO1991008897A1 CHAFF FIBER HAVING AN EVANESCENT ELECTROMAGNETIC DETECTION SIGNATURE, AND METHOD OF MAKING AND USING THE SAME 审中-公开
标题翻译：具有EVANESCENT ELECTROMAGNETIC检测签名的CHAFF纤维及其制造和使用方法
公开(公告)号：WO1991008897A1
公开(公告)日：1991-06-27
申请号：PCT/US1990007317
申请日：1990-12-11
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , STEVENS, Ward, C. , STURM, Edward, A. , ROMAN, Bruce, C. , CUMMINGS, Delwyn, F.
IPC分类号： B32B15/00
CPC分类号： F41J2/00 , H01Q15/145
摘要： An article comprising a non-conductive substrate having a sub-micron thickness of an oxidizable metal coating thereon, and at least one feature selected from the group consisting of: (i) an oxidation enhancingly effective amount of a salt, present on the oxidizable metal coating; (ii) a second (promoter) metal which is galvanically effective to promote the corrosion of the oxidizable metal coating, discontinuously coated on the oxidizable metal coating; (iii) the oxidizable metal coating being sulfurized; and (iv) the oxidizable metal coating being overcoated with a microporous layer of an electrically insulative material. Also disclosed are related methods of forming such articles, comprising chemical vapor depositing the oxidizable metal coating on the substrate. When utilized in a form comprising fine-diameter substrate elements such as glass or ceramic filaments, the resulting product may be usefully employed as an "evanescent" chaff. In the presence of atmospheric moisture, such evanescent chaff undergoes oxidization of the oxidizable metal coating, so that the radar signature of the chaff transiently decays.
摘要翻译：一种制品，其包含其上具有亚微米厚度的可氧化金属涂层的非导电基材，以及选自以下的至少一种特征：（i）氧化增强有效量的存在于可氧化金属上的盐涂层; （ii）第二（促进剂）金属，其电流上有效地促进可氧化金属涂层的腐蚀，不连续地涂覆在可氧化金属涂层上; （iii）可氧化金属涂层被硫化; 和（iv）用可电绝缘材料的微孔层涂覆可氧化的金属涂层。还公开了形成这种制品的相关方法，包括在基材上化学气相沉积可氧化金属涂层。当以包括诸如玻璃或陶瓷细丝的细直径基底元件的形式使用时，所得产物可有效地用作“ev逝”谷物。在存在大气水分的情况下，这种消逝的小麦经历可氧化金属涂层的氧化，使得谷壳的雷达标记瞬时衰变。

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