专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1996040690A1 METAL COMPLEX SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于化学蒸气沉积的金属复合源试剂
公开(公告)号：WO1996040690A1
公开(公告)日：1996-12-19
申请号：PCT/US1996009434
申请日：1996-06-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , KIRLIN, Peter, S. , BROWN, Duncan, W. , BAUM, Thomas, W. , VAARTSTRA, Brian, A. , GARDINER, Robin, A.
IPC分类号： C07F05/00
CPC分类号： C23C16/18 , C07F3/003 , C07F5/003 , C07F7/003 , C07F9/005 , C07F19/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula MAYX, wherein M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAy with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of beta -diketonates and their sulfur and nitrogen analogs, beta -ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种式MAYX的金属有机络合物，其中M是一个Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X络合; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

2. 发明申请

WO1991015868A1 PROCESS, COMPOSITION, AND APPARATUS FOR PURIFYING INERT GASES TO REMOVE LEWIS ACID AND OXIDANT IMPURITIES THEREFROM 审中-公开
标题翻译：用于净化惰性气体的方法，组合物和装置，用于去除乳酸和氧化物的污染物
公开(公告)号：WO1991015868A1
公开(公告)日：1991-10-17
申请号：PCT/US1990001700
申请日：1990-03-30
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , TOM, Glenn, M. , BROWN, Duncan, W.
IPC分类号： H01J07/18
CPC分类号： C01B6/065 , B01J20/3204 , B01J20/321 , B01J20/3246 , B01J20/3255 , B01J20/3265 , C01B21/0427 , C01B23/00 , C01B25/06
摘要： A scavenger for purifying inert gas mixtures to remove Lewis acid and oxidant impurities therefrom, comprising (i) an inert inorganic support, and (ii) an active scavenging species on the support, formed by deposition thereon of an organometallic precursor and pyrolysis thereof at a selected elevated temperature. The organometallic precursor is an alkyl metal compound comprising a metal of Group IA, IIA, and/or IIIA, wherein the pyrolysis temperature may range from about 150 DEG C to about 250 DEG C, depending on the specific alkyl metal compound employed as the precursor. Also disclosed are: a corresponding method of making the scavenger; a process for purifying inert gases by contacting same with the scavenger; and a vessel (10) containing a bed (18) of the scavenger, useful as an apparatus for purifying inert gases.
摘要翻译：一种用于净化惰性气体混合物以从其中除去路易斯酸和氧化剂杂质的清除剂，其包含（i）惰性无机载体，和（ii）载体上的活性清除物质，其通过在其上沉积有机金属前体而形成，并在选择升高的温度。有机金属前体是包含IA，IIA和/或IIIA族金属的烷基金属化合物，其中热分解温度可以在约150℃至约250℃的范围内，这取决于用作前体的特定烷基金属化合物。还公开了：制备清除剂的相应方法; 通过与清除剂接触来净化惰性气体的方法; 和含有清除剂床（18）的容器（10），可用作净化惰性气体的装置。

3. 发明申请

WO1992001314A1 N-TYPE SEMICONDUCTING DIAMOND, AND METHOD OF MAKING THE SAME 审中-公开
标题翻译： N型半导体金刚石及其制造方法
公开(公告)号：WO1992001314A1
公开(公告)日：1992-01-23
申请号：PCT/US1990003818
申请日：1990-07-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , BEETZ, Charles, P., Jr. , GORDON, Douglas, C. , BROWN, Duncan, W.
IPC分类号： H01L31/06
CPC分类号： H01L29/1602 , C23C16/271 , C23C16/278 , H01L21/0237 , H01L21/02527 , H01L21/02576 , H01L21/0262
摘要： N-type semiconducting diamond (77, 142, 144) is disclosed which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorus, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implantation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.
摘要翻译：公开了N型半导体金刚石（77,142,144），其固有地，即在金刚石形成时，掺杂有n型掺杂剂原子。这种金刚石有利地通过来自包含用于金刚石的碳源化合物的源气体混合物和用于n型杂质物质的挥发性前体化合物的源气体混合物的化学气相沉积形成，使得n型杂质原子掺杂在金刚石膜在其形成期间的原位。通过这种原位形成技术，可以以均匀的方式将浅的n型杂质原子，例如锂，砷，磷，钪，锑，铋等掺入晶格中，而不会发生粗晶格粗糙度和离子注入技术产生的其他晶格损伤伪像。公开了形成n型半导体金刚石的相应的化学气相沉积方法。本发明的n型半导体金刚石可有效地用于形成包括pn金刚石结的金刚石基晶体管器件和其它微电子器件应用中。

4. 发明申请

WO1990003452A1 CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE 审中-公开
标题翻译：化学气相沉积碳化硅
公开(公告)号：WO1990003452A1
公开(公告)日：1990-04-05
申请号：PCT/US1989004148
申请日：1989-09-25
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ADVANCED TECHNOLOGY MATERIALS, INC. , BROWN, Duncan, W. , PARSONS, James, D.
IPC分类号： C23C16/00
CPC分类号： C23C16/325
摘要： Silicon carbide is deposited by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition CnSinHm, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrates (14), producing stoichiometric deposited silicon carbide (12). Preferred molecular sources include H3SiCH2SiH3, a silacycloalkane of the form (-SiH2CH2-)p, where p is 2, 3, 4 or 5, and a cyclic structure of the form (-SiH(CH3)-)q, where q is 4 or 5.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式