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1. 发明申请

WO2012024310A2 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME 审中-公开
标题翻译：含有同位素的含硼化合物及其制造方法和使用方法
公开(公告)号：WO2012024310A2
公开(公告)日：2012-02-23
申请号：PCT/US2011/047942
申请日：2011-08-16
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , YEDAVE, Sharad, N. , JONES, Edward, E. , ZOU, Peng , TANG, Ying , CHAMBERS, Barry, Lewis , RAY, Richard, S.
发明人： KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , YEDAVE, Sharad, N. , JONES, Edward, E. , ZOU, Peng , TANG, Ying , CHAMBERS, Barry, Lewis , RAY, Richard, S.
IPC分类号： C01B35/06 , C01B9/08
CPC分类号： C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

2. 发明申请

WO2011056515A2 ION IMPLANTATION SYSTEM AND METHOD 审中-公开
标题翻译：离子植入系统和方法
公开(公告)号：WO2011056515A2
公开(公告)日：2011-05-12
申请号：PCT/US2010/053977
申请日：2010-10-25
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , JONES, Edward, E. , YEDAVE, Sharad, N. , TANG, Ying , CHAMBERS, Barry, Lewis , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , ZOU, Peng
发明人： JONES, Edward, E. , YEDAVE, Sharad, N. , TANG, Ying , CHAMBERS, Barry, Lewis , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , ZOU, Peng
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01L21/265 , C23C14/48 , C23C14/52 , H01J37/08 , H01J37/3171 , H01J37/32055 , H01J37/32412 , H01J37/32449 , H01J2237/006 , H01J2237/022
摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.
摘要翻译：一种离子注入系统和方法，用于提供掺杂剂气体供给管线中的掺杂气体的冷却，以通过例如使用诸如B2F4之类的硼源材料或其他BF3替代物的电弧室发热来抵抗掺杂气体的加热和分解。描述了各种电弧室热管理布置，以及等离子体性质，特定流程布置，清洁过程，功率管理，平衡偏移，提取光学优化，流通道沉积物检测和源寿命优化等方面的改进，以实现高效率离子注入系统的操作。

3. 发明申请

WO2010093380A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：WO2010093380A1
公开(公告)日：2010-08-19
申请号：PCT/US2009/053520
申请日：2009-08-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , FENG, Lin , BISHOP, Steven, E. , OLANDER, W., Karl , TANG, Ying
发明人： SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , FENG, Lin , BISHOP, Steven, E. , OLANDER, W., Karl , TANG, Ying
IPC分类号： H01L21/265
CPC分类号： H01J37/08 , C23C14/48 , C23C14/54 , C23C14/564 , H01J27/08 , H01J37/16 , H01J37/18 , H01J37/3171 , H01J37/32862 , H01J2237/0209 , H01J2237/022 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
摘要翻译：使用温度和/或反应性清洗剂清洁离子注入系统或其组件，使得能够通过监测阴极偏置功率并根据比较值采取校正动作来增加/蚀刻用于离子注入系统的间接加热的阴极中的阴极以蚀刻或再生阴极。

4. 发明申请

WO2009102762A2 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体处理系统中的离子源清洗
公开(公告)号：WO2009102762A2
公开(公告)日：2009-08-20
申请号：PCT/US2009/033754
申请日：2009-02-11
申请人： SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , SERGI, Steven , FENG, Lin , BISHOP, Steven, E. , OLANDER, Karl, W. , TANG, Ying
发明人： SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , SERGI, Steven , FENG, Lin , BISHOP, Steven, E. , OLANDER, Karl, W. , TANG, Ying
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
摘要翻译：通过适当地控制电弧室中的温度，利用能够在电弧室的离子源中生长/蚀刻长丝的反应清洁试剂来清洁离子注入系统或其组件，期望的长丝生长或替代长丝蚀刻。还描述了使用活性气体，例如XeFx，WFx，AsFx，PFx和TaFx，其中x具有化学计量适当的值或数值范围，用于在离子注入机或注入机的部件的原位或异位清洁区域清洁布置，在环境温度，升高的温度或等离子体条件下。在特定的反应性清洁剂中，BrF3被描述为可用于清洁离子注入系统或其部件，在原位或非原位清洁装置中。还描述了一种清洁离子注入系统的前级以至少部分地从所述前级去除电离相关沉积物的方法，包括使所述前级线路与清洁气体接触，其中所述清洁气体与所述沉积物发生化学反应。还描述了改善离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

5. 发明申请

WO2013122986A1 CARBON DOPANT GAS AND CO-FLOW FOR IMPLANT BEAM AND SOURCE LIFE PERFORMANCE IMPROVEMENT 审中-公开
标题翻译：用于植入光束和碳源生物质量改善的碳氢化合物气体和共流
公开(公告)号：WO2013122986A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/025840
申请日：2013-02-13
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： BYL, Oleg , STURM, Edward, A. , TANG, Ying , YEDAVE, Sharad, N. , SWEENEY, Joseph, D. , SERGL, Steven, G. , CHAMBERS, Barry, Lewis
IPC分类号： H01L21/265 , H01J37/317
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01L31/18 , H01L33/005
摘要： Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
摘要翻译：描述了离子注入工艺和系统，其中使用碳掺杂剂源材料来实现碳掺杂。描述了各种气体混合物，包括碳掺杂剂源材料以及用于这种碳掺杂的气体的共流组合。描述了在碳掺杂剂源材料中提供原位清洁剂，以及碳掺杂剂源气体，氢化物气体，氟化物气体，惰性气体，氧化物气体和其它气体的特定组合。

6. 发明申请

WO2014137872A1 ION IMPLANTATION COMPOSITIONS, SYSTEMS, AND METHODS 审中-公开
标题翻译：离子植入组合物，系统和方法
公开(公告)号：WO2014137872A1
公开(公告)日：2014-09-12
申请号：PCT/US2014/019815
申请日：2014-03-03
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： BYL, Oleg , SWEENEY, Joseph, D. , TANG, Ying , RAY, Richard, S.
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/08 , H01J2237/006 , H01J2237/08 , H01L21/2225
摘要： Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co- flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.
摘要翻译：描述了用于注入掺杂物种类的离子注入组合物，系统和方法。描述了具体的硒掺杂剂源组合物，以及使用共流气体来实现植入系统特征如配方转变，束稳定性，源寿命，束均匀性，束电流和所有权成本的优点。

7. 发明申请

WO2011137486A1 DIAGNOSTIC AND PROGNOSTIC AND THERAPEUTIC METHODS 审中-公开
标题翻译：诊断和预防和治疗方法
公开(公告)号：WO2011137486A1
公开(公告)日：2011-11-10
申请号：PCT/AU2011/000513
申请日：2011-05-04
申请人： MONASH UNIVERSITY , LIU, Jun-Ping , CHAN, Jianxiong , HAO, Haibang , TANG, Ying , CHEN, Yingyu , LI, He
发明人： LIU, Jun-Ping , CHAN, Jianxiong , HAO, Haibang , TANG, Ying , CHEN, Yingyu , LI, He
IPC分类号： C12Q1/68 , C12N15/06 , G01N33/48
CPC分类号： C12Q1/6883 , C12Q2600/158 , G01N33/84 , G01N2800/044 , G01N2800/08 , G01N2800/301
摘要： An assay for a behavioural disorder characterised by anxiety, such as OCD, and/or a lipid and/or a lipid-associated liver disorder (hereinafter "the conditions"), comprising assessing the level or activity of an analyte selected from ATP13A2 polypeptide, ATP13A2 nucleic acid, Mn 2+ , and a complex comprising ATP13A2 polypeptide and Mn 2+ , wherein the level or activity of the analyte indicates that the test subject has or is susceptible to the conditions. A method of treatment or prevention employing the assessment assays or ATP13A2 polypeptide or ATP13A2 nucleic acid. ATP13A2 polypeptide or ATP13A2 nucleic acid for use in the treatment or prevention of the conditions wherein the ATP13A2 polypeptide or ATP13A2 nucleic acid increases the level of mitochondrial Mn 2+ in subjects exhibiting a low level of mitochondrial Mn 2+. An isolated cell or organism comprising same, wherein the activity of ATP13A2 polypeptide is modified, such as reduced or inhibited (ablated). An assay for agents that complement the phenotype an ATP13A2 deficient cell or non-human organism comprising such cells, the assay comprising contacting the cell or organism with a putative agent and assessing the ability of the agent to increase the level of mitochondrial Mn 2+ in the cell. An assay for agents that modulate Mn 2+ levels in a cell or organism, the assay comprising contacting the cell or organism with a putative agent and assessing the ability of the agent to increase the level or activity of ATP13A2 in the cell or organism.
摘要翻译：以焦虑为特征的行为障碍（例如OCD，和/或脂质和/或脂质相关性肝病）（以下称为“所述病症”）的测定法包括评估选自ATP13A2多肽的分析物的水平或活性， ATP13A2核酸，Mn2 +和包含ATP13A2多肽和Mn2 +的复合物，其中分析物的水平或活性指示测试对象具有或者易受条件影响。使用评估测定法或ATP13A2多肽或ATP13A2核酸的治疗或预防的方法。 ATP13A2多肽或ATP13A2核酸用于治疗或预防其中ATP13A2多肽或ATP13A2核酸增加显示低水平线粒体Mn2 +的受试者线粒体Mn2 +的水平的病症。包含其的分离的细胞或生物体，其中ATP13A2多肽的活性被修饰，例如减少或抑制（消融）。对包含这种细胞的ATP13A2缺陷型细胞或非人生物体的表型补充的试剂的测定法，其包括使细胞或生物与推定剂接触并评估试剂增加细胞中线粒体Mn2 +的水平的能力。用于调节细胞或生物体中的Mn 2+水平的试剂的测定法，该测定法包括使细胞或生物体与推定剂接触并评估试剂增加细胞或生物体中ATP13A2的水平或活性的能力。

8. 发明申请

WO2010017070A1 ANTI-HEPCIDIN-25 SELECTIVE ANTIBODIES AND USES THEREOF 审中-公开
标题翻译：抗HEPCIDIN-25选择性抗体及其用途
公开(公告)号：WO2010017070A1
公开(公告)日：2010-02-11
申请号：PCT/US2009/052044
申请日：2009-07-29
申请人： ELI LILLY AND COMPANY , LEUNG, Donmienne, Doen, Mun , LUAN, Peng , TANG, Ying , WITCHER, Derrick, Ryan , YACHI, Pia, Pauliina
发明人： LEUNG, Donmienne, Doen, Mun , LUAN, Peng , TANG, Ying , WITCHER, Derrick, Ryan , YACHI, Pia, Pauliina
IPC分类号： C07K16/26 , G01N33/577 , A61K39/395 , A61P7/06
CPC分类号： C07K16/26 , C07K2317/34 , C07K2317/565 , C07K2317/567 , C07K2317/92 , G01N33/74
摘要： Monoclonal antibodies are provided that bind to the N-terminus of human hepcidin-25 and are characterized as having high affinity and selectivity for the polypeptide. The antibodies of the invention are useful for increasing serum iron levels, reticulocyte count, red blood cell count, hemoglobin, and/or hematocrit in a human and for the treatment of various disorders, such as anemia, in a human subject. The antibodies of the invention are also useful as analytical tools, such as in sandwich ELISA.
摘要翻译：提供结合人hepcidin-25的N末端的单克隆抗体，其特征在于对多肽具有高亲和力和选择性。本发明的抗体可用于增加人类血清铁水平，网织红细胞计数，红细胞计数，血红蛋白和/或血细胞比容，以及用于治疗人类受试者中的各种疾病如贫血。本发明的抗体也可用作分析工具，例如夹心ELISA。

9. 发明申请

WO2006020114A2 VARIANT FC REGIONS 审中-公开
标题翻译： VARIANT FC地区
公开(公告)号：WO2006020114A2
公开(公告)日：2006-02-23
申请号：PCT/US2005/025276
申请日：2005-07-18
申请人： APPLIED MOLECULAR EVOLUTION, INC. , ALLAN, Barrett , JIANG, Weidong , TANG, Ying , WATKINS, Jeffry, Dean
发明人： ALLAN, Barrett , JIANG, Weidong , TANG, Ying , WATKINS, Jeffry, Dean
IPC分类号： C07K16/00
CPC分类号： C07K16/2887 , C07K16/2896 , C07K2317/52 , C07K2317/732 , C07K2317/734
摘要： The present invention provides polypeptides, particularly therapeutic antibodies, comprising a novel, variant Fc region. Furthermore the invention provides variant Fc regions which confer an altered effector function or altered serum half life upon a polypeptide to which it is operable attached.
摘要翻译：本发明提供了包含新的变体Fc区的多肽，特别是治疗性抗体。此外，本发明提供了赋予改变的效应子功能或改变其可操作地连接的多肽上的血清半衰期的变体Fc区。

10. 发明申请

WO2004071408A2 Aβ BINDING MOLECULES 审中-公开
标题翻译： Abeta绑定分子
公开(公告)号：WO2004071408A2
公开(公告)日：2004-08-26
申请号：PCT/US2004/002004
申请日：2004-02-06
申请人： APPLIED MOLECULAR EVOLUTION, INC. , DAVIES, Julian , TANG, Ying , WATKINS, Jeffry, Dean
发明人： DAVIES, Julian , TANG, Ying , WATKINS, Jeffry, Dean
IPC分类号： A61K
CPC分类号： C07K16/18 , A61K2039/505 , C07K2317/24 , C07K2317/55 , C07K2317/56 , C07K2317/565 , C07K2317/92
摘要： The present invention encompasses isolated antibodies, or fragments thereof, that are humanized variants of murine antibody 266 which employ complementarity determining regions derived from murine antibody 266. The variant antibodies are useful for treatment or prevention of conditions and diseases associated with Aβ, including Alzheimer's disease, Down's syndrome, cerebral amyloid angiopathy, mild cognitive impairment, and the like.
摘要翻译：本发明包括使用衍生自鼠抗体266的互补决定区的鼠抗体266的人源化变体的分离的抗体或其片段。变体抗体可用于治疗或预防与Aβ相关的病症和疾病，包括阿尔茨海默氏病唐氏综合征，脑淀粉样血管病，轻度认知障碍等。

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