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1. 发明申请

WO2011160297A1 FIBER OPTIC CABINET 审中-公开
标题翻译：光纤柜
公开(公告)号：WO2011160297A1
公开(公告)日：2011-12-29
申请号：PCT/CN2010/074333
申请日：2010-06-23
申请人： 3M INNOVATIVE PROPERTIES COMPANY , WEI, Jian , LU, Bin , YU, Bin , CUI, Yifeng , XIONG, Peiyou , PENG, Yingliang , XU, Zhiyong , WANG, Yingyu
发明人： WEI, Jian , LU, Bin , YU, Bin , CUI, Yifeng , XIONG, Peiyou , PENG, Yingliang , XU, Zhiyong , WANG, Yingyu
IPC分类号： G02B6/46 , G02B6/00
CPC分类号： G02B6/4401 , G02B6/4442
摘要： The present invention discloses a fiber optic telecommunication cabinet for use in fiber optic telecommunication networks. The fiber optic telecommunication cabinet comprises a base and a housing. The base has a plurality of ports passing through the base to allow passage telecommunication cables to insert into the fiber optic cabinet. The fiber optic telecommunication cabinet further includes an optical fiber termination block attached to the base. The optical fiber termination block has a plurality of optical modules supported by the mounting frame, wherein the optical modules can be rotated in a plane perpendicular to the longitudinal direction of the fiber optic telecommunication cabinet from a first storage position to a second accessible position.
摘要翻译：本发明公开了一种用于光纤通信网络的光纤通信柜。光纤通信柜包括基座和外壳。基座具有穿过基座的多个端口，以允许通过通信电缆插入光纤机柜。光纤通信柜还包括连接到基座的光纤终端块。光纤终端块具有由安装框架支撑的多个光学模块，其中光学模块可以在垂直于光纤通信柜的纵向方向的平面中从第一存储位置旋转到第二可接近位置。

2. 发明申请

WO2011079419A1 FIBER OPTIC CABINET 审中-公开
标题翻译：光纤柜
公开(公告)号：WO2011079419A1
公开(公告)日：2011-07-07
申请号：PCT/CN2009/001587
申请日：2009-12-30
申请人： 3M INNOVATIVE PROPERTIES COMPANY , WEI, Jian , CUI, Yifeng , XIONG, Peiyou , WANG, Yingyu , LU, Bin , YU, Bin , XU, Zhiyong , PENG, Yingliang
发明人： WEI, Jian , CUI, Yifeng , XIONG, Peiyou , WANG, Yingyu , LU, Bin , YU, Bin , XU, Zhiyong , PENG, Yingliang
IPC分类号： G02B6/44
CPC分类号： G02B6/4442
摘要： The present invention relates to a fiber optic telecommunication cabinet for use in fiber optic telecommunication networks. The fiber optic telecommunication cabinet comprises a base and a housing. The housing defines an internal cavity from an open first end that extends longitudinally to a closed second end. The base is configured for attachment to the open first end of the housing to provide an enclosed configuration. The base has a plurality of ports passing through the base to allow passage telecommunication cables into the fiber optic cabinet. A center support column extends from the base. The fiber optic cabinet includes a plurality of patch panel frames disposed radially around the center support column and a patch cord management plate attached to the center support column above the plurality of patch panel frames.
摘要翻译：本发明涉及一种用于光纤通信网络的光纤通信柜。光纤通信柜包括基座和外壳。壳体从开放的第一端限定内腔，其纵向延伸到闭合的第二端。基座被构造成附接到壳体的敞开的第一端以提供封闭的构造。基座具有穿过基座的多个端口，以允许通信电缆进入光纤机柜。中心支撑柱从底座延伸。光纤机柜包括围绕中心支撑柱径向布置的多个接线板框架和在多个接线板框架上方连接到中心支撑柱的接插线管理板。

3. 发明申请

WO2009123895A1 EMBEDDED COMMUNICATION ENCLOSURE 审中-公开
标题翻译：嵌入式通信外壳
公开(公告)号：WO2009123895A1
公开(公告)日：2009-10-08
申请号：PCT/US2009/038202
申请日：2009-03-25
申请人： 3M INNOVATIVE PROPERTIES COMPANY , XU, Zhiyong , YU, Bin , LIN, Min , BONVALLAT, Pierre , GHAZY, Ahmed, M.
发明人： XU, Zhiyong , YU, Bin , LIN, Min , BONVALLAT, Pierre , GHAZY, Ahmed, M.
IPC分类号： H04Q1/02
CPC分类号： H04Q1/021 , H04Q1/026 , H04Q1/06 , H04Q1/13 , H04Q2201/10
摘要： Disclosed is an embedded communication enclosure for housing and supporting communication devices and communication cables, comprising: an enclosure body; a cable connecting member, provided within said enclosure body to connect communication cables, where an input cable from the exterior of the enclosure body is connected to a plurality of distribution cables to be brought out of the enclosure body; and a first door connected with the enclosure body, for opening and closing the front of the enclosure body, said first door comprising a second door embedded therein to provide access to the cable connecting member; wherein said cable connecting member is arranged to correspond to said second door in such a manner that said cable connecting member is exposed to outside when said second door is opened. With the embedded communication enclosure, a two-stage operating interface is achieved, so that communication devices and cables housed in the embedded communication enclosure will not be undesirably influenced or accessed during frequently changing and maintaining terminal jumpers.
摘要翻译：公开了一种用于容纳和支持通信设备和通信电缆的嵌入式通信外壳，包括：外壳主体; 电缆连接构件，设置在所述外壳主体内以连接通信电缆，其中来自外壳主体外部的输入电缆连接到要从外壳主体出来的多个配线电缆; 以及与所述外壳主体连接的用于打开和关闭所述外壳主体的前部的第一门，所述第一门包括嵌入其中的第二门以提供对所述电缆连接构件的接近; 其中所述电缆连接构件被布置成对应于所述第二门，使得当所述第二门打开时所述电缆连接构件暴露于外部。利用嵌入式通信机箱，实现了两级操作界面，使得容纳在嵌入式通信机箱中的通信设备和电缆在频繁更换和维护终端跳线期间不会受到不必要的影响或访问。

4. 发明申请

WO2013127054A1 BASIC COMPOSITIONS INCLUDING INORGANIC OXIDE NANOPARTICLES AND AN ORGANIC BASE, COATED SUBSTRATES, ARTICLES, AND METHODS 审中-公开
标题翻译：基本组成包括无机氧化物纳米颗粒和有机碱，涂层基材，制品和方法
公开(公告)号：WO2013127054A1
公开(公告)日：2013-09-06
申请号：PCT/CN2012/071667
申请日：2012-02-27
申请人： 3M INNOVATIVE PROPERTIES COMPANY , CHEN, Xuehua , YANG, Yu , ZHU, Dong-Wei , ZHOU, Ping , YU, Bin
发明人： CHEN, Xuehua , YANG, Yu , ZHU, Dong-Wei , ZHOU, Ping , YU, Bin
IPC分类号： C09D1/00 , C09D5/00
CPC分类号： B05D1/28 , B05D1/40 , B05D3/0413 , B05D3/101 , C09D1/00 , C09D7/61 , C09D7/63 , C09D7/67 , Y10T428/25 , Y10T428/257
摘要： Basic coating compositions including inorganic oxide nanoparticles and an organic base are described. Methods of coating a substrate with the coating compositions, coated substrates prepared using the methods, and articles that include the coated substrates are also disclosed.
摘要翻译：描述了包括无机氧化物纳米颗粒和有机碱的基础涂料组合物。还公开了用涂料组合物涂布基材的方法，使用该方法制备的涂布基材和包括涂布的基材的制品。

5. 发明申请

WO2005048339A1 SELF ALIGNED DAMASCENE GATE 审中-公开
标题翻译：自对准丹麦门
公开(公告)号：WO2005048339A1
公开(公告)日：2005-05-26
申请号：PCT/US2004/033251
申请日：2004-10-08
申请人： ADVANCED MICRO DEVICES, INC. , TABERY, Cyrus, E. , AHMED, Shibly, S. , BUYNOSKI, Matthew, S. , DAKSHINA-MURPHY, Srikanteswara , KRIVOKAPIC, Zoran , WANG, Haihong , YANG, Chih-Yuh , YU, Bin
发明人： TABERY, Cyrus, E. , AHMED, Shibly, S. , BUYNOSKI, Matthew, S. , DAKSHINA-MURPHY, Srikanteswara , KRIVOKAPIC, Zoran , WANG, Haihong , YANG, Chih-Yuh , YU, Bin
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7842
摘要： A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) (200) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin (310) in the fin area, and forming a mask (320) in the fin area. The method further includes etching the mask (320) to expose a channel area (330) of the MOSFET (200), etching the fin (310) to thin a width of the fin (310) in the channel area (330), forming a gate over the fin (310), and forming contacts to the gate, the source region, and the drain region.
摘要翻译：一种用于形成金属氧化物半导体场效应晶体管（200）的方法，包括在衬底上形成翅片区域，源极区域和漏极区域，在翅片区域形成翅片（310），并形成在翅片区域中的掩模（320）。该方法还包括蚀刻掩模（320）以暴露MOSFET（200）的沟道区域（330），蚀刻鳍片（310）以使沟槽区域（330）中的鳍片（310）的宽度变薄，从而形成在所述翅片（310）上方的栅极，以及形成与所述栅极，所述源极区域和所述漏极区域的接触。

6. 发明申请

WO2004068585A1 STRAINED CHANNEL FINFET 审中-公开
标题翻译：应变通道FINFET
公开(公告)号：WO2004068585A1
公开(公告)日：2004-08-12
申请号：PCT/US2004/000967
申请日：2004-01-15
申请人： ADVANCED MICRO DEVICES, INC. , DAKSHINA-MURTHY, Srikanteswara , AN, Judy, Xilin , KRIVOKAPIC, Zoran , WANG, Haihong , YU, Bin
发明人： DAKSHINA-MURTHY, Srikanteswara , AN, Judy, Xilin , KRIVOKAPIC, Zoran , WANG, Haihong , YU, Bin
IPC分类号： H01L29/10
CPC分类号： H01L29/785 , H01L29/1054 , H01L29/4908 , H01L29/66795 , H01L29/78654 , H01L29/78687
摘要： A semiconductor structure includes a fin (205) and a layer (305) formed on the fin. The fin (205) includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer (305) is formed on the surfaces and includes a second crystalline material. The first crystalline material has a different lattice constant than the second crystalline material to induce tensile strain within the layer (305).
摘要翻译：半导体结构包括翅片（205）和形成在翅片上的层（305）。翅片（205）包括具有矩形横截面和多个表面的第一晶体材料。层（305）形成在表面上并且包括第二结晶材料。第一结晶材料具有与第二结晶材料不同的晶格常数，以在层（305）内引起拉伸应变。

7. 发明申请

WO2003032400A1 SEMICONDUCTOR DEVICE FORMED WITH DISPOSABLE SPACER AND LINER USING HIGH-K MATERIAL AND METHOD OF FABRICATION 审中-公开
标题翻译：使用高K材料和制造方法形成具有可分散间隔物和衬里的半导体器件
公开(公告)号：WO2003032400A1
公开(公告)日：2003-04-17
申请号：PCT/US2002/030840
申请日：2002-09-26
申请人： ADVANCED MICRO DEVICES, INC. , YU, Bin , XIANG, Qi , WANG, HaiHong
发明人： YU, Bin , XIANG, Qi , WANG, HaiHong
IPC分类号： H01L29/78
CPC分类号： H01L29/4983 , H01L29/6653 , H01L29/6659
摘要： A semiconductor device (10) and method of manufacture. A liner (62) composed of a high-K material having a relative permittivity of greater than eight is formed adjacent at least the sidewalls of a gate (28). Sidewall spacers (66) are formed adjacent the gate and spaced apart from the gate by the liner. The liner can be removed using an etch process that has substantially no reaction with a gate dielectric (34) of the gate.
摘要翻译：一种半导体器件（10）及其制造方法。由栅极（28）的至少侧壁形成由相对介电常数大于8的高K材料构成的衬垫（62）。侧壁间隔件（66）邻近闸门形成并且通过衬套与闸门间隔开。可以使用基本上不与栅极的栅极电介质（34）反应的蚀刻工艺来去除衬里。

8. 发明申请

WO2010028279A1 STORING LOG DATA EFFICIENTLY WHILE SUPPORTING QUERYING 审中-公开
标题翻译：在支持查询时有效地存储日志数据
公开(公告)号：WO2010028279A1
公开(公告)日：2010-03-11
申请号：PCT/US2009/056090
申请日：2009-09-04
申请人： ARCSIGHT, INC. , HUANG, Wei , ZHOU, Yizheng , YU, Bin , TANG, Wenting , BEEDGEN, Christian, F.
发明人： HUANG, Wei , ZHOU, Yizheng , YU, Bin , TANG, Wenting , BEEDGEN, Christian, F.
IPC分类号： G06F7/00
CPC分类号： H04L63/1425 , G06F11/3476 , G06F17/30595 , G06F21/552 , G06F2201/86 , G06F2221/034 , H04L63/1408
摘要： A logging system includes an event receiver and a storage manager. The receiver receives log data, processes it, and outputs a column-based data "chunk." The manager receives and stores chunks. The receiver includes buffers that store events and a metadata structure that stores metadata about the contents of the buffers. Each buffer is associated with a particular event field and includes values from that field from one or more events. The metadata includes, for each "field of interest," a minimum value and a maximum value that reflect the range of values of that field over all of the events in the buffers. A chunk is generated for each buffer and includes the metadata structure and a compressed version of the buffer contents. The metadata structure acts as a search index when querying event data. The logging system can be used in conjunction with a security information/event management (SIEM) system.
摘要翻译：记录系统包括事件接收器和存储管理器。接收器接收日志数据，处理它，并输出基于列的数据“块”。经理收到并存储块。接收器包括存储事件的缓冲器和存储关于缓冲器的内容的元数据的元数据结构。每个缓冲区与一个特定事件字段相关联，并包含一个或多个事件的该字段的值。对于每个“感兴趣的领域”，元数据包括反映缓冲器中的所有事件的该字段的值的范围的最小值和最大值。为每个缓冲区生成一个块，并包括元数据结构和缓冲区内容的压缩版本。元数据结构在查询事件数据时用作搜索索引。记录系统可以与安全信息/事件管理（SIEM）系统结合使用。

9. 发明申请

WO2005062310A1 FLASH MEMORY DEVICE 审中-公开
标题翻译：闪存存储器件
公开(公告)号：WO2005062310A1
公开(公告)日：2005-07-07
申请号：PCT/US2004/035482
申请日：2004-10-26
申请人： ADVANCED MICRO DEVICES, INC. , HILL, Wiley, Eugene , WANG, Haihong , WU, Yider , YU, Bin
发明人： HILL, Wiley, Eugene , WANG, Haihong , WU, Yider , YU, Bin
IPC分类号： G11C16/04
CPC分类号： H01L21/28273 , H01L27/115 , H01L27/11556 , H01L29/785
摘要： A memory device (100) includes a conductive structure (210), a number of dielectric layers (410430) and a control gate (510). The dielectric layers (410-430) are formed around the conductive structure (210) and the control gate (510) is formed over the dielectric layers (410-430). A portion of the conductive structure (210) functions as a drain region (1005) for the memory device (100) and at least one of the dielectric layers (410-430) functions as a charge storage structure for the memory device (100). The dielectric layers (410-430) may include oxide-nitride-oxide layers.
摘要翻译：存储器件（100）包括导电结构（210），多个电介质层（410430）和控制栅极（510）。电介质层（410-430）围绕导电结构（210）形成，并且控制栅极（510）形成在电介质层（410-430）上。导电结构（210）的一部分用作存储器件（100）的漏极区（1005），并且介电层（410-430）中的至少一个用作存储器件（100）的电荷存储结构。。电介质层（410-430）可以包括氧化物 - 氮化物 - 氧化物层。

10. 发明申请

WO2004112105A2 MULTI-STEP CHEMICAL MECHANICAL POLISHING OF A GATE AREA IN A FINFET 审中-公开
标题翻译：金属矿场门区的多步化学机械抛光
公开(公告)号：WO2004112105A2
公开(公告)日：2004-12-23
申请号：PCT/US2004/017724
申请日：2004-06-05
申请人： ADVANCED MICRO DEVICES, INC. , ACHUTHAN, Krishnashree , AHMED, Shibly, S. , WANG, Haihong , YU, Bin
发明人： ACHUTHAN, Krishnashree , AHMED, Shibly, S. , WANG, Haihong , YU, Bin
IPC分类号： H01L21/00
CPC分类号： H01L29/785 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L29/42384 , H01L29/4908 , H01L29/66795 , H01L29/6681 , Y10S438/959
摘要： A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer (320) that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.
摘要翻译：制造MOSFET型半导体器件的方法包括平坦化沉积在沟道上的栅极材料层（320）。平面化在包括初始“粗糙”平坦化然后是“精细”平坦化的多步骤过程中进行。用于更精细平坦化的浆料可以包括倾向于粘附到栅极材料的低区域的添加材料。

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