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    • 5. 发明申请
    • TESTING A MEMORY DEVICE HAVING FIELD EFFECT TRANSISTORS SUBJECT TO THRESHOLD VOLTAGE SHIFTS CAUSED BY BIAS TEMPERATURE INSTABILITY
    • 测试具有由偏置温度不稳定性引起的阈值电压变化的场效应晶体管的存储器件
    • WO2009140612A1
    • 2009-11-19
    • PCT/US2009/044171
    • 2009-05-15
    • QUALCOMM INCORPORATEDCHEN, NanLEE, Sian-Yee, SeanJUNG, Seong-OokWANG, Zhongze
    • CHEN, NanLEE, Sian-Yee, SeanJUNG, Seong-OokWANG, Zhongze
    • G11C29/10G11C29/50
    • G11C29/50G11C11/41G11C29/10G11C29/12005
    • A supply voltage is set for a memory device at a first supply voltage level. Test data is written to the memory device at the first supply voltage level in response to setting the supply voltage. The supply voltage is decreased for the memory device to a second supply voltage level below the first supply voltage level in response to writing the test data. The test data is read from the memory device at the second supply voltage level in response to decreasing the supply voltage. The supply voltage is increased for the memory device to a third supply voltage level above the second supply voltage level in response to reading the test data. The test data is read from the memory device at the third supply voltage level in response to increasing the supply voltage. The test data written to the memory device at the first supply voltage level is compared to the test data read from the memory device at the third supply voltage level in response to reading the test data from the memory device at the third supply voltage level.
    • 在第一电源电压电平下为存储器件设置电源电压。 响应于设置电源电压,以第一电源电压电平将测试数据写入存储器件。 响应于写入测试数据,存储器件的电源电压降低到低于第一电源电压电平的第二电源电压电平。 响应于降低电源电压,在第二电源电压电平下从存储器件读取测试数据。 响应于读取测试数据,存储器件的电源电压增加到高于第二电源电压电平的第三电源电压电平。 响应于增加电源电压,在第三电源电压电平下从存储器件读取测试数据。 响应于以第三电源电压从存储器件读取测试数据,将以第一电源电压电平写入存储器件的测试数据与从第三电源电压电平读出的测试数据进行比较。