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    • 7. 发明申请
    • BIMODAL OPERATION OF FERRROELECTRIC AND ELECTRET MEMORY CELLS AND DEVICES
    • 微电子和电子存储器电池和器件的双重操作
    • WO2005101419A1
    • 2005-10-27
    • PCT/NO2005/000119
    • 2005-04-12
    • THIN FILM ELECTRONICS ASAGUDESEN, Hans, GudeLEISTAD, Geirr, I.ENGQUIST, IsakGUSTAFSSON, Göran
    • GUDESEN, Hans, GudeLEISTAD, Geirr, I.ENGQUIST, IsakGUSTAFSSON, Göran
    • G11C11/22
    • G11C11/22
    • In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
    • 在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中,使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态, 在非破坏性读出操作中与印刻偏振状态区分开来。 使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。 印刷的存储器单元可以被覆盖,以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储 轻松的挥发性状态,由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。
    • 8. 发明申请
    • METHODS FOR STORING DATA IN NON-VOLATILE MEMORIES
    • 在非易失性存储器中存储数据的方法
    • WO2003088041A1
    • 2003-10-23
    • PCT/NO2003/000115
    • 2003-04-10
    • THIN FILM ELECTRONICS ASATORJUSSEN, Lars, SundellKARLSSON, Christer
    • TORJUSSEN, Lars, SundellKARLSSON, Christer
    • G06F11/16
    • G06F11/08G11C11/22G11C29/74
    • In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment comprising at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage. Subsequently bit errors are detected by comparing the identical copies in a memory control logic circuit, which also may be used for caching readout data copies or alternatively be connected with a separate cache memory. Corrected data are written back to the appropriate memory locations holding bit errors when the latter have been detected.
    • 在用于将数据存储在非易失性铁电随机存取存储器中的方法中,其中破坏性读出操作之后是重写操作,数据的相同副本被存储在不具有任何公共字线的不同存储器位置中,或者不是常用字线 通用位线。 读取第一字线的第一字线或第一字段的整体,所述字线或所述片段至少包括相同的数据副本的第一副本。 这样读取的数据被重写到存储器位置,并且另外从所讨论的存储器位置传送到适当的高速缓存位置,之后读取以字线或其段的形式的后续存储器位置,并将数据重写到高速缓存位置 。 重复操作,直到数据的所有相同副本已经传送到高速缓存存储器。 随后,通过比较存储器控制逻辑电路中的相同副本来检测位错误,存储器控制逻辑电路也可用于缓存读出的数据副本,或者替代地与单独的高速缓冲存储器连接。 当检测到这些数据被检测到时,校正的数据被写回到保持位错误的适当的存储器位置。
    • 9. 发明申请
    • A METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR PERFORMING THE METHOD
    • 用于读取被动矩阵寻址装置的方法和用于执行该方法的装置
    • WO2003046923A1
    • 2003-06-05
    • PCT/NO2002/000389
    • 2002-10-29
    • THIN FILM ELECTRONICS ASABRÖMS, PerKARLSSON, Christer
    • BRÖMS, PerKARLSSON, Christer
    • G11C11/22
    • G11C11/22
    • In a method for reading of a passive matrix-addressable device, particularly a memory device or a sensor device with individually addressable cells of a polarizable material, the cells store data in the form of one of two polarization states +P r ;-P r in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines (WL;BL) in an orthogonal electrode matrix, and wherein the cells are provided in or at the crossings between the word and bit lines (WL;BL) a voltage pulse protocol is used according to which electric potentials on all word and bit lines are controlled coordinated in time. During reading a word line (WL) is activated by applying voltage which relative to the potential on all crossing bit lines (BL) corresponds to the voltage VS and data stored in the cells connected to this active word line (AWL) are determined by detecting the charge values of the cells in a detection means (SA). In a device for performing the method electric potentialson all word and bit lines (WL;BL) are controlled coordinated in time by therewith connected control means which implements the voltage pulse protocol. - Use in passive matrix-addressable memory and sensor devices.
    • 在用于读取无源矩阵寻址装置,特别是具有可极化材料的单独可寻址单元的存储器件或传感器装置的方法中,电池以每种形式的两种偏振态+ Pr; -Pr之一的形式存储数据 并且通过在正交电极矩阵中形成字和位线(WL; BL)的寻址通孔寻址来写入和读取单元中的偏振状态,并且其中单元被提供在字和位之间或之间的交叉处 线路(WL; BL)使用电压脉冲协议,根据该电压脉冲协议,所有字线和位线上的电位在时间上被协调控制。 在读取期间,通过施加相对于所有交叉位线(BL)上的电位的电压对应于电压VS并且存储在连接到该有源字线(AWL)的单元中的数据)的电压来激活字线(WL) 检测装置(SA)中的单元的电荷值。 在用于执行该方法的电子装置中,所有字和位线(WL; BL)通过实现电压脉冲协议的连接的控制装置在时间上协调控制。 - 用于无源矩阵寻址存储器和传感器设备。