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1. 发明申请

WO2011053110A3 AN INTEGRATED PACKAGED ENVIRONMENTAL SENSOR AND ROIC AND A METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：一种集成的包装环境传感器和ROIC及其制造方法
公开(公告)号：WO2011053110A3
公开(公告)日：2011-08-18
申请号：PCT/MY2010000182
申请日：2010-09-30
申请人： MIMOS BERHAD , SYONO MOHD ISMAHADI , BIEN DANIEL CHIA SHENG , LEE HING WAH
发明人： SYONO MOHD ISMAHADI , BIEN DANIEL CHIA SHENG , LEE HING WAH
IPC分类号： G01N37/00 , G01N33/00
CPC分类号： G01D11/245 , G06K19/0717
摘要： An integrated packaged microchip (100) including at least one environmental sensor (104) and at least one Read-Out Integrated Chip (ROIC) (102) is provided, characterized in that, the integrated packaged microchip (100) further includes an etched opening (108) of the environmental sensor (104) exposed to a sensable environment, using at least one layer of glass wafer (101,106) and at least one layer of silicon wafer (107).
摘要翻译：提供包括至少一个环境传感器（104）和至少一个读出集成芯片（ROIC）（102）的集成封装微芯片（100），其特征在于，集成封装微芯片（100）还包括蚀刻开口使用至少一层玻璃晶片（101,106）和至少一层硅晶片（107），将所述环境传感器（104）的暴露于敏感环境的环境传感器（108）移除。

2. 发明申请

WO2011053110A2 AN INTEGRATED PACKAGED ENVIRONMENTAL SENSOR AND ROIC AND A METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：一体化包装环境传感器和ROIC及其制造方法
公开(公告)号：WO2011053110A2
公开(公告)日：2011-05-05
申请号：PCT/MY2010/000182
申请日：2010-09-30
申请人： MIMOS BERHAD , SYONO, Mohd Ismahadi , BIEN, Daniel Chia Sheng , LEE, Hing Wah
发明人： SYONO, Mohd Ismahadi , BIEN, Daniel Chia Sheng , LEE, Hing Wah
IPC分类号： G01N37/00 , G01N33/00
CPC分类号： G01D11/245 , G06K19/0717
摘要： An integrated packaged microchip (100) including at least one environmental sensor (104) and at least one Read-Out Integrated Chip (ROIC) (102) is provided, characterized in that, the integrated packaged microchip (100) further includes an etched opening (108) of the environmental sensor (104) exposed to a sensable environment, using at least one layer of glass wafer (101,106) and at least one layer of silicon wafer (107).
摘要翻译：提供包括至少一个环境传感器（104）和至少一个读出集成芯片（ROIC）（102）的集成封装微芯片（100），其特征在于，所述集成封装微芯片（100）还包括蚀刻开口使用至少一层玻璃晶片（101,106）和至少一层硅晶片（107）来暴露于可感知环境的环境传感器（104）（108）。

3. 发明申请

WO2011049428A1 INVERTED ISFET 审中-公开
标题翻译：反相ISFET
公开(公告)号：WO2011049428A1
公开(公告)日：2011-04-28
申请号：PCT/MY2010/000215
申请日：2010-10-19
申请人： MIMOS BERHAD , BIEN, Daniel Chia Sheng , LEE, Hing Wah , SYONO, Mohd Ismahadi
发明人： BIEN, Daniel Chia Sheng , LEE, Hing Wah , SYONO, Mohd Ismahadi
IPC分类号： G01N27/414
CPC分类号： G01N27/414
摘要： An inverted ion-sensitive field effect transistor (ISFET) (10) comprises a substrate layer (11), a sensing membrane (12) on said substrate layer (11), a layer of field oxide (19 ) on said sensing membrane (12), doped source (13) and drain (14) regions on said layer of field oxide (19), and characterized in that electrical contacts (16, 17) are provided to the respective source (13) and drain (14) regions on the opposing side of said sensing membrane (12) and said substrate layer (11) is windowed with an opening access (18) to said sensing membrane (12) to provide electrical isolation of the electrical contacts (16, 17) from said sensing membrane (12).
摘要翻译：反相离子敏感场效应晶体管（ISFET）（10）包括衬底层（11），在所述衬底层（11）上的感测膜（12），所述感测膜（12）上的场氧化物层），所述场氧化物层（19）上的掺杂源极（13）和漏极（14）区域，并且其特征在于，电触点（16,17）被提供到所述源极（13）和漏极（14）所述感测膜（12）和所述基底层（11）的相对侧被窗口化，并具有到所述感测膜（12）的开口（18），以提供电触头（16,17）与所述感测膜（12）。

4. 发明申请

WO2009066979A2 MEMS BASED PROBE CARD AND A METHOD OF TESTING SEMICONDUCTOR ION SENSOR USING THE SAME 审中-公开
标题翻译：基于MEMS的探针卡和使用其测试半导体离子传感器的方法
公开(公告)号：WO2009066979A2
公开(公告)日：2009-05-28
申请号：PCT/MY2008000144
申请日：2008-11-20
申请人： MIMOS BERHAD , SYONO MOHD ISMAHADI
发明人： SYONO MOHD ISMAHADI
IPC分类号： H01L21/66 , B81B7/00
CPC分类号： G01R1/06727 , G01R3/00
摘要： An MEMS based Probe Card (100) for testing integrated circuits at wafer level comprising a printed circuit board (1) in which an opening is formed on a middle portion therethrough; at least two opposing first electrode pad (3) being deposited on a periphery of the printed circuit board (1); and a wafer assembly disposed around the central of the printed circuit board (1) comprising a substrate layer (5) in which an opening is formed on a middle portion therethrough;an insulating layer (7) on the substrate layer (5); at least two opposing second electrode pads (9) in the peripheral region of the insulating layer (7); and a probe pin (11) on each second electrode pad (9), wherein the first electrode pads (3) and the second electrode pads (9) are electrically interconnected by a electrical conductor (13).
摘要翻译：一种用于在晶片级测试集成电路的基于MEMS的探针卡（100），包括印刷电路板（1），其中通过其中的中间部分形成开口; 至少两个相对的第一电极焊盘（3）沉积在印刷电路板（1）的周边上; 以及设置在所述印刷电路板（1）的中央周围的晶片组件，所述晶片组件包括基板层（5），所述基板层（5）中通过其中间部分形成开口;在所述基板层（5）上的绝缘层（7）在绝缘层（7）的周边区域中的至少两个相对的第二电极焊盘（9）; 和每个第二电极焊盘（9）上的探针（11），其中第一电极焊盘（3）和第二电极焊盘（9）通过电导体（13）电互连。

5. 发明申请

WO2009057988A3 RADIO FREQUENCY MEMS SWITCH 审中-公开
公开(公告)号：WO2009057988A3
公开(公告)日：2009-05-07
申请号：PCT/MY2008/000122
申请日：2008-10-22
申请人： MIMOS BERHAD , SULAIMAN, Suraya , SYONO, Mohd, Ismahadi
发明人： SULAIMAN, Suraya , SYONO, Mohd, Ismahadi
IPC分类号： H01L29/00 , H01H59/00
摘要： There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.

6. 发明申请

WO2009066991A3 A NOVEL APPARATUS AND METHOD FOR MONITORING ENVIRONMENTAL PARAMETERS 审中-公开
标题翻译：用于监测环境参数的新装置和方法
公开(公告)号：WO2009066991A3
公开(公告)日：2009-10-22
申请号：PCT/MY2008000157
申请日：2008-11-24
申请人： MIMOS BERHAD , ABDUL RANI ROZINA , LEE HING WAH , ABD AZIZ AIMAN SAJIDAH , SYONO MOHD ISMAHADI , ABDULLAH ALI ZAINI , MAT HUSSIN MOHD ROFEI BIN
发明人： ABDUL RANI ROZINA , LEE HING WAH , ABD AZIZ AIMAN SAJIDAH , SYONO MOHD ISMAHADI , ABDULLAH ALI ZAINI , MAT HUSSIN MOHD ROFEI BIN
IPC分类号： A01G31/02
CPC分类号： A01G7/00 , A01G31/00
摘要： The present invention relates to an apparatus and a method for controlling and monitoring nutrient solution to be supplied to a plant.
摘要翻译：本发明涉及一种用于控制和监测供给植物的营养液的设备和方法。

7. 发明申请

WO2009045092A3 FULLY INTEGRATED ISFET- VALVELESS MICROPUMP 审中-公开
标题翻译：完全集成的ISFET-VALVELESS MICROPUMP
公开(公告)号：WO2009045092A3
公开(公告)日：2009-06-11
申请号：PCT/MY2008000117
申请日：2008-09-29
申请人： MIMOS BERHAD , SYONO MOHD ISMAHADI , ABDUL RANI ROZINA , LEE HING WAH
发明人： SYONO MOHD ISMAHADI , ABDUL RANI ROZINA , LEE HING WAH
IPC分类号： G01N27/333
CPC分类号： F04B19/006 , G01N27/4148
摘要： The present invention relates to a fully integrated ISFET valveless micropump for use as a pH sensor and as a chemical based sensor especially intended for Wireless Sensor Network (WSN) characterized in that wherein the valveless pump with ISFET is embedded along a pump channel and temperature sensors at its inlet and wherein a membrane in the middle is the pump diaphragm and is electrostatically actuated by an electrode above it which is deposited on the glass and wherein when the membrane controlled by a microcontroller is in motion, fluid or gas would be pumped in thru the inlet and travels thru the channel where ISFET is located and out thru the outlet.
摘要翻译：本发明涉及用作pH传感器和特别用于无线传感器网络（WSN）的基于化学传感器的完全集成的ISFET无阀微型泵，其特征在于，其中具有ISFET的无阀泵沿泵通道和温度传感器在其入口处，并且其中中间的膜是泵隔膜，并且由其上方的电极静电致动，沉积在玻璃上，并且其中当由微控制器控制的膜运动时，流体或气体将被泵送通过入口并通过ISFET所在的通道穿过出口。

8. 发明申请

WO2009045091A3 A VERTICAL THIN POLYSILICON SUBSTRATE ISFET 审中-公开
标题翻译：垂直薄多晶硅衬底ISFET
公开(公告)号：WO2009045091A3
公开(公告)日：2009-06-04
申请号：PCT/MY2008000116
申请日：2008-09-29
申请人： MIMOS BERHAD , SYONO MOHD ISMAHADI , ABDUL RANI ROZINA
发明人： SYONO MOHD ISMAHADI , ABDUL RANI ROZINA
IPC分类号： G01N27/333 , G01N27/30
CPC分类号： G01N27/4148
摘要： The present invention generally relates to a vertical thin polysilicon substrate ISFET for the measurement of hydrogen ions (pH) and other ion activity in solution characterized in that wherein the present invention comprises of a method of making polysilicon vertical ISFET which is fully CMOS compatible and wherein the substrate is the polysilicon which is vertically sandwiched between a source and a drain and wherein a very high drive current is possible to achieve due to the thin polysilicon material and wherein the sandwiched structure is designed to ensure excellent noise isolation and wherein the gate lies on the same surface level as the drain and hence a very large area for better gate sensitivity is possible.
摘要翻译：本发明一般涉及用于测量溶液中氢离子（pH）和其它离子活性的垂直薄多晶硅衬底ISFET，其特征在于其中本发明包括制造完全CMOS兼容的多晶硅垂直ISFET的方法，其中衬底是垂直夹在源极和漏极之间的多晶硅，并且其中由于薄的多晶硅材料可以实现非常高的驱动电流，并且其中夹层结构被设计成确保优异的噪声隔离，并且其中栅极位于与漏极相同的表面水平，因此具有非常大的面积以获得更好的栅极灵敏度是可能的。

9. 发明申请

WO2009061168A1 FABRICATION METHOD OF A MICROMECHANICAL DEVICE 审中-公开
标题翻译：微生物装置的制造方法
公开(公告)号：WO2009061168A1
公开(公告)日：2009-05-14
申请号：PCT/MY2008/000128
申请日：2008-11-06
申请人： MIMOS BERHAD , BUYONG, Muhamad Ramdzan , ZAIN, Azlina Mohd , SITI, Aishah Mohamad , SYONO, Mohd Ismahadi , LEE, Hing Wah , SHAHRIR, Rizal Kasjoo
发明人： BUYONG, Muhamad Ramdzan , ZAIN, Azlina Mohd , SITI, Aishah Mohamad , SYONO, Mohd Ismahadi , LEE, Hing Wah , SHAHRIR, Rizal Kasjoo
IPC分类号： B81C1/00 , B81B7/00 , F04B43/04
CPC分类号： F04B43/043 , B81C1/00158
摘要： A method for fabricating a micromechanical device comprises the steps of providing a substrate having a first dielectric layer on top surface of said substrate, a bottom conductive layer on top surface of said first dielectric layer, a second dielectric layer on said bottom conductive layer, a sacrificial layer on said second dielectric layer, a third dielectric layer on said sacrificial layer, and a top conductive layer on said third dielectric layer, etching a plurality of holes at said top conductive layer, then at said third dielectric layer and said sacrificial layer, and sealing said etched holes of said top conductive layer and third dielectric layer by depositing a fourth dielectric layer on top of said top conductive layer.
摘要翻译：一种用于制造微机械装置的方法包括以下步骤：提供在所述基底的顶表面上具有第一介电层的基底，在所述第一介电层的顶表面上的底部导电层，所述底部导电层上的第二介电层，所述第二电介质层上的牺牲层，所述牺牲层上的第三电介质层和所述第三介电层上的顶部导电层，在所述第三介电层和所述牺牲层处蚀刻所述顶部导电层上的多个孔，以及通过在所述顶部导电层的顶部上沉积第四电介质层来密封所述顶部导电层和第三电介质层的所述蚀刻孔。

10. 发明申请

WO2011040803A1 A REFERENCE ELECTRODE AND A METHOD THEREOF 审中-公开
标题翻译：参考电极及其方法
公开(公告)号：WO2011040803A1
公开(公告)日：2011-04-07
申请号：PCT/MY2010/000175
申请日：2010-09-23
申请人： MIMOS BERHAD , SYONO, Mohd Ismahadi , ABDUL RANI, Rozina
发明人： SYONO, Mohd Ismahadi , ABDUL RANI, Rozina
IPC分类号： G01N27/414 , G01N27/333
CPC分类号： G01N27/4148
摘要： A reference electrode (130) for sensing pH is provided in an ambient electrolyte solution in an ion sensitive field effect transistor (ISFET) (100) which includes a source (160), a drain (150) and a gate (140), characterized in that, the reference electrode (130) includes an alternating current source, an insulating membrane separating the reference electrode (130) from the ambient electrolyte solution, a direct current (DC) biasing voltage (170) at the gate (140) wherein the voltage is a predetermined constant voltage, wherein the reference electrode (130) is connectable to the alternating current source (120) where the reference electrode (130) is further included in the gate (140) and the reference electrode (130) is constructed from Complementary metal-oxide-semiconductor (CMOS) compatible metal.
摘要翻译：在离子敏感场效应晶体管（ISFET）（100）中的环境电解质溶液中提供用于感测pH的参比电极（100），其包括源（160），漏极（150）和栅极（140），其特征在于参考电极（130）包括交流电源，将参考电极（130）与环境电解质溶液分开的绝缘膜，在门（140）处的直流（DC）偏置电压（170），其中电压是预定的恒定电压，其中参考电极（130）可连接到交流电源（120），其中参考电极（130）还包括在栅极（140）中，并且参考电极（130）由互补金属氧化物半导体（CMOS）兼容金属。

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