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    • 1. 发明申请
    • INTEGRATED CIRCUIT EMPLOYING LOW LOSS SPOT-SIZE CONVERTER
    • 集成电路采用低损耗大小转换器
    • WO2009002661A1
    • 2008-12-31
    • PCT/US2008/065603
    • 2008-06-03
    • THE UNIVERSITY OF CONNECTICUTOPEL, INC.TAYLOR, Geoff, W.
    • TAYLOR, Geoff, W.
    • G02B6/30
    • H01L31/105G02B6/1228G02B6/124H01L31/1113H01S5/0261H01S5/06203H01S5/0655H01S5/1014H01S5/106H01S5/1064H01S5/18308H01S5/18358H01S5/2004H01S5/2027H01S5/3004H01S5/3211
    • An integrated circuit is provided with a photonic device and a spot-size converter waveguide device integrated on a common substrate. The spot-size converter waveguide device provides for transformation between a larger spot-size and a smaller spot-size corresponding to the photonic device. The spot-size converter waveguide device includes at least one of a bottom mirror and top mirror, which provide highly-reflective lower and upper cladding, respectively, for vertical confinement of light propagating through the waveguide device. The top mirror overlies opposing sidewalls of the spot-converter waveguide device, which provide highly-reflective sidewall cladding for lateral confinement of light propagating through the waveguide device. Advantageously, the highly-reflective lower cladding provided by the bottom mirror limits optical loss of the waveguide device. Similarly, the highly-reflective upper cladding and sidewall cladding provided by the top mirror limits optical loss of the waveguide device.
    • 集成电路设置有集成在公共基板上的光子器件和点尺寸转换器波导器件。 点尺寸转换器波导器件提供了对应于光子器件的较大光点尺寸和较小光点尺寸之间的变换。 点尺寸转换器波导器件包括底镜和顶镜中的至少一个,其分别提供高反射性的下包层和上包层,用于垂直限制通过波导器件传播的光。 顶部镜子覆盖在点转换器波导器件的相对的侧壁上,其提供用于横向限制通过波导器件传播的光的高反射侧壁包层。 有利的是,由底镜提供的高反射性下层包层限制了波导器件的光损耗。 类似地,由顶镜提供的高反射性上包层和侧壁包层限制了波导器件的光损耗。
    • 2. 发明申请
    • SEMICONDUCTOR DEVICE WITH QUANTUM WELL AND ETCH STOP
    • 具有量子阱和蚀刻停止的半导体器件
    • WO2004038764A8
    • 2005-07-07
    • PCT/US0333829
    • 2003-10-23
    • UNIV CONNECTICUTOPEL INC
    • TAYLOR GEOFF WDUNCAN SCOTT W
    • H01L21/331H01L21/335H01L27/06H01L29/15H01L29/737H01L29/80H01L33/00
    • H01L29/66318H01L27/0605H01L29/155H01L29/66462H01L29/7371H01L29/802
    • A semiconductor device includes a series of layers formed on a substrate (10), the layers including a first plurality of layers including an n-type ohmic contact layer (14), a p-type modulation doped quantum well structure (20), an n-type modulation doped quantum well structure (24), and a fourth plurality of layers including a p-type ohmic contact layer (30). Etch stop layers (16 and 28a) are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices).
    • 半导体器件包括在衬底(10)上形成的一系列层,所述层包括包括n型欧姆接触层(14),p型掺杂掺杂量子阱结构(20)的第一多个层, n型调制掺杂量子阱结构(24)和包括p型欧姆接触层(30)的第四多层。 蚀刻停止层(16和28a)用于形成与n型欧姆接触层的接触并与n型调制掺杂量子阱结构接触。 还提供薄盖层以保护某些层免于氧化。 优选地,每个这样的蚀刻停止层被制成足够薄以允许在从该结构实现的光电子/电子器件的操作期间电流穿透其中(包括异质结晶闸管器件,n沟道HFET器件,p沟道HFET器件,p型量子阱器件, 基极双极晶体管器件和n型量子阱基双极晶体管器件)。
    • 4. 发明申请
    • OPTOELECTRONIC CLOCK GENERATOR AND OTHER OPTOELECTRONIC DEVICES AND SYSTEMS EMPLOYING AT LEAST ONE HETEROJUNCTION THYRISTOR DEVICE
    • 光电时钟发生器和采用至少一个异构电路设备的其他光电设备和系统
    • WO2004038765A3
    • 2004-09-10
    • PCT/US0333830
    • 2003-10-23
    • UNIV CONNECTICUTOPEL INC
    • DEHMUBED ROHINTONTAYLOR GEOFF WUPP DANIEL CCAI JIANHONG
    • H01L21/331H01L21/335H01L29/15H01L29/80H03K3/42H03K17/79H03M1/66H03M1/74H03M1/80H01S5/30
    • H01L29/66318H01L29/155H01L29/66462H01L29/802H03K3/42H03K17/79H03M1/667H03M1/74H03M1/808
    • An optoelectronic device is provided that includes a thyristor detector/emitter device (16) having an input port (29) and an output port (27). The thyristor detector/emitter device (16) is adapted to detect an input optical pulse (15) supplied to the input port (29) and to produce an output optical pulse (12) (via laser emission) and an output electrical pulse (14) in response to the detected input optical pulse (15). The output optical pulse (12) is output via the output port (27). An optical feedback path is operably coupled between the output port (27) and the input port (29) of the thyristor detector/emitter device (16). The optical feedback path supplies a portion of the output optical pulse (12) produced by the thyristor detector/emitter device (16) to the input port (29), thereby causing the thyristor detector/emitter device (16) to produce a sequence of output optical pulses (12) and a corresponding sequence of output electrical pulses (14). Preferably, the optical feedback path comprises a programmable optical delay line realized by a network of in-plane waveguide structures and directional coupler devices (26-1 - 26-M) that are integrally formed with the thyristor device structure of the detector/emitter device (16). Other optoelectronic devices are realized with the thyristor detector/emitter (16).
    • 提供了一种光电子器件,其包括具有输入端口(29)和输出端口(27)的晶闸管检测器/发射器件(16)。 晶闸管检测器/发射器件(16)适于检测提供给输入端口(29)的输入光脉冲(15)并产生输出光脉冲(12)(经由激光发射)和输出电脉冲(14 )响应于检测到的输入光脉冲(15)。 输出光脉冲(12)经由输出端口(27)输出。 光学反馈路径可操作地耦合在输出端口(27)和晶闸管检测器/发射器件(16)的输入端口(29)之间。 光学反馈路径将由晶闸管检测器/发射器件(16)产生的输出光脉冲(12)的一部分提供给输入端口(29),从而使晶闸管检测器/发射器件(16)产生一系列 输出光脉冲(12)和相应的输出电脉冲序列(14)。 优选地,光学反馈路径包括由面内波导结构的网络和定向耦合器件(26-1-26-M)实现的可编程光学延迟线,其与检测器/发射器件的晶闸管器件结构整体形成 (16)。 其他光电子器件由晶闸管检测器/发射极(16)实现。
    • 7. 发明申请
    • SEMICONDUCTOR LASER ARRAY DEVICE EMPLOYING MODULATION DOPED QUANTUM WELL STRUCTURES
    • 半导体激光阵列器件采用调制量子阱结构
    • WO2005010951A2
    • 2005-02-03
    • PCT/US2004024031
    • 2004-07-26
    • UNIV CONNECTICUTOPEL INC
    • TAYLOR GEOFF WDUNCAN SCOTT
    • H01S5/183H01S5/40H01S5/42H01L
    • H01S5/423B82Y20/00G02F1/01716G02F2201/346H01L27/15H01S5/06203H01S5/18313H01S5/18341H01S5/18358H01S5/18369H01S5/3086H01S5/4087
    • An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The array of multi-wavelength thyristor devices may be used to realize devices that provide a variety of optoelectronic functions, such as an array of thyristor-based lasers that emit light at different wavelengths and/or an array of thyristor-based detectors that detect light at different wavelengths (e.g., for wavelength-division-multiplexing applications).
    • 光电集成电路包括基板,形成在基板上的多层结构,以及在多层结构中形成的晶闸管器件阵列和相应的谐振腔。 适于处理不同波长的光的谐振腔通过选择性地去除所述多层结构的部分以提供对应于不同波长的不同垂直尺寸的所述谐振腔来形成。 优选地,选择性地去除以提供多个波长的多层结构的该部分包括通过重复未掺杂的间隔层和未掺杂的蚀刻停止层的对而形成的周期性子结构。 多层结构可以由III-V族材料形成。 在这种情况下,周期性亚结构的未掺杂的间隔层和未掺杂的蚀刻停止层优选分别包括未掺杂的GaAs和未掺杂的AlAs。 未掺杂的AlAs在通过包含氟的氯基气体混合物蚀刻期间用作蚀刻停止。 多波长晶闸管器件的阵列可用于实现提供各种光电子功能的器件,例如发射不同波长的光的晶闸管激光器阵列和/或检测光的基于晶闸管的检测器的阵列 在不同的波长(例如,用于波分复用应用)。
    • 8. 发明申请
    • INTERFERENCE CANCELLATION SYSTEM EMPLOYING PHOTONIC SIGMA DELTA MODULATION AND OPTICAL TRUE TIME DELAY
    • 干涉消除系统采用光子信号调制和光时域延迟
    • WO2004068727A2
    • 2004-08-12
    • PCT/US2004/002494
    • 2004-01-29
    • THE UNIVERSITY OF CONNECTICUTOPEL, INC.
    • TAYLOR, Geoff, W.CAI, JianhongUPP, Daniel, C.
    • H04B
    • H01Q1/525H03M3/43H03M3/454H03M3/456H04B1/525
    • Interference caused by the propagation of a transmit signal transmitted from a transmit antenna to a receive antenna is effectively cancelled by an improved signal cancellation system. The system includes an interference cancellation signal generator that generates a time-delayed and amplitude-reduced representation of said transmit signal. A summing stage is operably coupled to the interference cancellation signal generator and the receive antenna. The summing stage subtracts the time-delayed and amplitude-reduced representation of the transmit signal from a receive signal to substantially cancel the interference. The interference cancellation signal generator preferably includes a novel programmable optical delay line that introduces a variable amount of optical delay to an optical signal derived from said transmit signal in addition to a thyristor-based sigma delta modulator that converts samples of the transmit signal to into a digital signal in the optical domain.
    • 通过改进的信号消除系统有效地消除由从发射天线发射到接收天线的发射信号的传播引起的干扰。 该系统包括产生所述发射信号的时间延迟和幅度减小的表示的干扰消除信号发生器。 求和级可操作地耦合到干扰消除信号发生器和接收天线。 求和级从接收信号中减去发射信号的时间延迟和幅度减小的表示,以基本上消除干扰。 干扰消除信号发生器优选地包括一种新颖的可编程光学延迟线,其将可变量的光学延迟引入到从所述发射信号导出的光学信号,以及基于可控硅的Σ-Δ调制器,其将发射信号的采样转换为 光域中的数字信号。
    • 9. 发明申请
    • CONCENTRATED SOLAR PHOTOVOLTAIC MODULE
    • 浓缩太阳能光伏组件
    • WO2009058424A1
    • 2009-05-07
    • PCT/US2008/062995
    • 2008-05-08
    • OPEL, INC.LINKE, Edward, J.MIDDLETON, Francisco, A.
    • LINKE, Edward, J.MIDDLETON, Francisco, A.
    • H01L31/042H02N6/00
    • H01L31/0547H01L31/02021H01L31/0475H01L31/048H01L31/0543Y02B10/12Y02E10/52
    • A solar photovoltaic module containing a housing that supports an array of photovoltaic cells and corresponding light guides. The housing includes a base member having a generally planar support surface and two side walls projecting from the support surface. Two side panels detachably connect to the side walls, and a top panel detachably connects to the side panels. The top panel includes a plurality of concentrating lenses that focus incident solar radiation into the inside of the housing towards the light guide. The light guides are disposed between the corresponding concentrating lenses and photovoltaic cells such that the concentrating lenses and light guides work together to direct light onto the photovoltaic cells. At least one retaining member interfaces to the light guides and applies a downward force that biases the respective light guides toward the corresponding photovoltaic cells.
    • 一种太阳能光伏模块,其包含支撑光伏电池阵列和对应的光导的壳体。 壳体包括具有大致平坦的支撑表面的基部构件和从支撑表面突出的两个侧壁。 两个侧板可拆卸地连接到侧壁,并且顶板可拆卸地连接到侧板。 顶部面板包括多个集中透镜,其将入射的太阳辐射聚焦到壳体的内部朝向光导。 光导布置在相应的聚焦透镜和光伏电池之间,使得集中透镜和光导件一起工作以将光引导到光伏电池上。 至少一个保持构件与导光体接合并施加向相应的光伏电池偏压各个光导的向下的力。
    • 10. 发明申请
    • SEMICONDUCTOR LASER ARRAY DEVICE EMPLOYING MODULATION DOPED QUANTUM WELL STRUCTURES
    • WO2005010951A3
    • 2005-02-03
    • PCT/US2004/024031
    • 2004-07-26
    • THE UNIVERSITY OF CONNECTICUTOPEL, INC.
    • TAYLOR, Geoff, W.DUNCAN, Scott
    • H01S5/00
    • An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process different wavelengths of light, are formed by selectively removing portions of said multilayer structure to provide said resonant cavities with different vertical dimensions that correspond to the different wavelengths. Preferably, that portion of the multilayer structure that is selectively removed to provide the multiple wavelengths includes a periodic substructure formed by repeating pairs of an undoped spacer layer and an undoped etch stop layer. The multilayer structure may be formed from group III-V materials. In this case, the undoped spacer layer and undoped etch stop layer of the periodic substructure preferably comprises undoped GaAs and undoped AlAs, respectively. The undoped AlAs functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The array of multi-wavelength thyristor devices may be used to realize devices that provide a variety of optoelectronic functions, such as an array of thyristor-based lasers that emit light at different wavelengths and/or an array of thyristor-based detectors that detect light at different wavelengths (e.g., for wavelength-division-multiplexing applications).