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1. 发明申请

WO2019125434A1 JOINT TRANSMISSION COMMITMENT SIMULATION 审中-公开
公开(公告)号：WO2019125434A1
公开(公告)日：2019-06-27
申请号：PCT/US2017/067607
申请日：2017-12-20
申请人： GILES, James , KORULA, Nitish, J. , BLAIS, Martin , SOBIN, Michael , NGUYEN, Son, Ba , XIONG, Yan
发明人： GILES, James , KORULA, Nitish, J. , BLAIS, Martin , SOBIN, Michael , NGUYEN, Son, Ba , XIONG, Yan
IPC分类号： G06Q30/02 , G06F9/46
摘要： Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for performing a joint simulation for satisfying multiple different coexisting commitments to allocate digital resources. In one aspect, a method includes accessing logged data for prior allocations of digital resources, where the logged data includes at least one property associated with respective allocations of the digital resources. Different allocations of the digital resources included in the logged data are assigned to different ones of the multiple different commitments. For each commitment to allocate digital resources, an expected required resource amount that results in the commitment being allocated at least a specified minimum resource based on the allocations of digital resources of the logged data that were assigned to the multiple different commitments is determined.

2. 发明申请

WO2013052263A3 ANTIFUNGAL COMPOUNDS 审中-公开
标题翻译：抗真菌化合物
公开(公告)号：WO2013052263A3
公开(公告)日：2013-06-20
申请号：PCT/US2012055683
申请日：2012-09-16
申请人： MICROBIOTIX INC , NGUYEN SON T , DING XIAOYUAN , WILLIAMS JOHN D , OPPERMAN TIMOTHY J
发明人： NGUYEN SON T , DING XIAOYUAN , WILLIAMS JOHN D , OPPERMAN TIMOTHY J
IPC分类号： A61K31/4178
CPC分类号： A01N43/90 , A01N43/38 , A01N43/40 , A01N43/50 , A01N43/54
摘要： The invention provides fungicide and/or antifungal organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens, such as pathogenic fungi species (including opportunistic pathogenic species) by administration to an individual (human or other mammal), plant, or foodstuff that is susceptible to infection by or has been infected with cells of the fungal species.
摘要翻译：本发明提供杀真菌剂和/或抗真菌有机化合物及其组合物，其通过给予个体（人或其他哺乳动物）杀死或抑制一种或多种微生物病原体（例如致病真菌物种（包括机会致病物种））细胞的生长，植物或食物，其易感染或已被真菌物种的细胞感染。

3. 发明申请

WO2013052263A2 ANTIFUNGAL COMPOUNDS 审中-公开
标题翻译：抗真菌化合物
公开(公告)号：WO2013052263A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/055683
申请日：2012-09-16
申请人： MICROBIOTIX, INC. , NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , OPPERMAN, Timothy, J.
发明人： NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , OPPERMAN, Timothy, J.
IPC分类号： A01N43/90
CPC分类号： A01N43/90 , A01N43/38 , A01N43/40 , A01N43/50 , A01N43/54
摘要： The invention provides fungicide and/or antifungal organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens.
摘要翻译：本发明提供了杀死或抑制一种或多种微生物病原体细胞生长的杀真菌剂和/或抗真菌有机化合物及其组合物。

4. 发明申请

WO2013036322A1 C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC DEVICES 审中-公开
标题翻译：用于电子设备的碳化硼碳纳米管电介质膜
公开(公告)号：WO2013036322A1
公开(公告)日：2013-03-14
申请号：PCT/US2012/045517
申请日：2012-07-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , NGUYEN, Son, Van , GRILL, Alfred , HAIGH, Thomas, J. , MEHTA, Sanjay
发明人： NGUYEN, Son, Van , GRILL, Alfred , HAIGH, Thomas, J. , MEHTA, Sanjay
IPC分类号： H01B3/18 , H01B17/62
CPC分类号： H01L21/02112 , H01B3/12 , H01L21/02274 , H01L21/02318 , H01L21/02348 , H01L21/02351 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53252 , H01L23/53276 , H01L29/1054 , H01L29/1606 , H01L29/456 , H01L29/4908 , H01L29/4983 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： A carbon-rich carbon boron nitride dielectric film (14) having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
摘要翻译：提供具有等于或小于3.6的介电常数的富碳碳氮化硼电介质膜（14），其可用作各种电子器件中的组分。富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。

5. 发明申请

WO2012048035A3 PROSTHETIC HEART VALVE 审中-公开
标题翻译：人造心脏瓣膜
公开(公告)号：WO2012048035A3
公开(公告)日：2012-07-19
申请号：PCT/US2011054973
申请日：2011-10-05
申请人： EDWARDS LIFESCIENCES CORP , LEVI TAMIR , NGUYEN SON V , BENICHOU NETANEL , MAIMON DAVID , YOHANAN ZIV , GUROVICH NIK , FELSEN BELLA , DADONKIN LARISA
发明人： LEVI TAMIR , NGUYEN SON V , BENICHOU NETANEL , MAIMON DAVID , YOHANAN ZIV , GUROVICH NIK , FELSEN BELLA , DADONKIN LARISA
IPC分类号： A61F2/24 , A61M29/02
CPC分类号： A61F2/2418 , A61F2/2412 , A61F2/2433 , A61F2220/0075 , A61F2230/0054 , A61F2250/0036 , A61F2250/0097
摘要： Embodiments of a radially collapsible and expandable prosthetic heart valve are disclosed. A valve frame can have a tapered profile when mounted on a delivery shaft, with an inflow end portion having a smaller diameter than an outflow end portion. The valve can comprise generally V-shaped leaflets, reducing material within the inflow end of the frame. An outer skirt can be secured to the outside of the inflow end portion of the frame, the outer skirt having longitudinal slack when the valve is expanded and lying flat against the frame when the valve is collapsed. A diagonally woven inner skirt can elongate axially with the frame. Side tabs of adjacent leaflets can extend through and be secured to window frame portions of the frame to form commissures. The window frame portions can be depressed radially inward relative to surrounding frame portions when the valve is crimped onto a delivery shaft.
摘要翻译：公开了径向可折叠和可扩张假体心脏瓣膜的实施例。阀框架在安装在输送轴上时可具有锥形轮廓，其中流入端部的直径小于流出端部的直径。瓣膜可以包括大致V形小叶，从而减少了在框架流入端内的物质。外裙部可以固定到框架的流入端部的外侧，当瓣膜膨胀时，外裙部具有纵向松弛并且当瓣膜塌陷时平躺在框架上。对角编织的内裙部可以与框架轴向延伸。相邻小叶的侧翼可延伸穿过并固定到框架的窗框部分以形成连合。当阀压接到输送轴上时，窗框部分可相对于周围框架部分径向向内凹陷。

6. 发明申请

WO2011084667A2 INTERCONNECT STRUCTURE WITH A MUSHROOM-SHAPED OXIDE CAPPING LAYER AND METHOD FOR FABRICATING SAME 审中-公开
标题翻译：具有蘑菇状氧化物覆盖层的互连结构及用于制造相同结构的方法
公开(公告)号：WO2011084667A2
公开(公告)日：2011-07-14
申请号：PCT/US2010060933
申请日：2010-12-17
申请人： IBM , NGUYEN SON VAN , GRILL ALFRED , HAIGH THOMAS J , SHOBHA HOSADURGA , VO TUAN A
发明人： NGUYEN SON VAN , GRILL ALFRED , HAIGH THOMAS J , SHOBHA HOSADURGA , VO TUAN A
IPC分类号： H01L21/768 , H01L21/28
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that includes a dielectric material (52) having a dielectric constant of 4.0 or less and including a plurality of conductive features (56) embedded therein. The dielectric material (52) has an upper surface that is located beneath an upper surface of each of the plurality of conductive features (56). A first dielectric cap (58) is located on the upper surface of the dielectric material (52) and extends onto at least a portion of the upper surface of each of the plurality of conductive features (56). As shown, the first dielectric cap (58) forms an interface (59) with each of the plurality of conductive features (56) that is opposite to an electrical field that is generated by neighboring conductive features. The inventive structure also includes a second dielectric cap (60) located on an exposed portion of the upper surface of each of the plurality of conductive features (56) not covered with the first dielectric cap (58). The second dielectric cap (60) further covers on an exposed surface of the first dielectric cap (58).
摘要翻译：提供了一种互连结构，其包括介电常数为4.0或更小并且包括嵌入其中的多个导电部件（56）的介电材料（52）。介电材料（52）具有位于多个导电部件（56）中的每一个的上表面下方的上表面。第一电介质帽（58）位于电介质材料（52）的上表面上并且延伸到多个导电部件（56）中的每一个的上表面的至少一部分上。如所示，第一电介质帽（58）与多个导电特征（56）中的每一个形成与由相邻导电特征产生的电场相反的界面（59）。本发明的结构还包括位于未被第一电介质帽（58）覆盖的多个导电部件（56）中的每一个的上表面的暴露部分上的第二电介质帽（60）。第二电介质帽（60）还覆盖在第一电介质帽（58）的暴露表面上。

7. 发明申请

WO2010118295A3 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030496
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

8. 发明申请

WO2010036999A3 SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL 审中-公开
标题翻译：带中心气体输送机的基板加工室
公开(公告)号：WO2010036999A3
公开(公告)日：2010-08-12
申请号：PCT/US2009058557
申请日：2009-09-28
申请人： APPLIED MATERIALS INC , MERRY NIR , NGUYEN SON T
发明人： MERRY NIR , NGUYEN SON T
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45563
摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.
摘要翻译：本文公开了处理衬底的方法和设备。处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

9. 发明申请

WO2010065719A3 FAILOVER AND FAILBACK OF COMMUNICATION BETWEEN A ROUTER AND A NETWORK SWITCH 审中-公开
公开(公告)号：WO2010065719A3
公开(公告)日：2010-06-10
申请号：PCT/US2009/066550
申请日：2009-12-03
申请人： CISCO TECHNOLOGY, INC. , GUNUKULA, Naveen , PUTHENPARAMBIL, Jeslin , NGUYEN, Son , LIM, Byung
发明人： GUNUKULA, Naveen , PUTHENPARAMBIL, Jeslin , NGUYEN, Son , LIM, Byung
IPC分类号： H04L12/28 , H04L12/26
摘要： A router is provided. The router includes a primary interface, a backup interface, a processor, and a memory. The primary interface and backup interface may be used to communicate with a network switch. The router may be configured to determine whether the primary interface is stable. The primary interface is stable when the primary interface may be used to exchange information with a network switch over a primary network segment. The router may be configured to activate the primary interface when the primary interface is determined to be stable. The router may also be configured to activate the backup interface when the primary interface is determined to be not stable. The backup interface may be activated for the exchange of information with the network switch.

10. 发明申请

WO2010025366A3 METHOD FOR FORMING ALLYLIC ALCOHOLS 审中-公开
公开(公告)号：WO2010025366A3
公开(公告)日：2010-03-04
申请号：PCT/US2009/055363
申请日：2009-08-28
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS , DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
发明人： DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
IPC分类号： C07C29/14 , C07C33/20 , C07C215/30 , C07D307/36 , B01J31/28
摘要： A method of performing a chemical reaction includes reacting an allyl donor and a substrate in a reaction mixture, and forming a homoallylic alcohol in the reaction mixture. The substrate may be an aldehyde or a hemiacetal. The reaction mixture includes a ruthenium catalyst, carbon monoxide at a level of at least 1 equivalent relative to the substrate, and water at a level of at least 1 equivalent relative to the substrate, and an amine at a level of from 0 to 0.5 equivalent relative to the substrate. The reaction mixture may also include a halide, and the equivalents of the amine may be similar to those of the halide. The reacting includes maintaining the reaction mixture at a temperature of at least 40°C. The method may be catalytic in metal, environmentally benign, amenable to large-scale applications, and applicable to a wide range of substrates.

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