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    • 2. 发明申请
    • METHOD FOR SELECTIVE DEPOSITION OF DIELECTRIC LAYERS ON SEMICONDUCTOR STRUCTURES
    • 在半导体结构上选择性沉积介质层的方法
    • WO2011028462A1
    • 2011-03-10
    • PCT/US2010/046284
    • 2010-08-23
    • RAYTHEON COMPANYHWANG, KiuchulBENNETT, David, W.NGUYEN, Huy, Q.
    • HWANG, KiuchulBENNETT, David, W.NGUYEN, Huy, Q.
    • H01L27/06H01L21/8252
    • H01L27/0629H01L21/8252H01L27/0605H01L28/40
    • A method for forming a capacitor and a transistor device on different surface portions of a semiconductor structure includes forming a passivation dielectric layer for the device; forming a bottom electrode for the capacitor; forming a removable layer extending over the bottom electrode and over the passivation dielectric layer with a window therein, such window exposing said bottom electrode; depositing a capacitor dielectric layer of the same or different material as the passivation dielectric layer over the removable layer with first portions passing through the window onto the exposed bottom electrode and second portions being over the removable layer, the thickness of the deposited layer being different from the thickness of the passivation layer; removing the removable layer with the second portions thereon while leaving said first portions on the bottom electrode; and forming a top electrode for the capacitor on the second portions remaining on the bottom electrode.
    • 一种用于在半导体结构的不同表面部分上形成电容器和晶体管器件的方法包括形成用于器件的钝化介质层; 形成电容器的底部电极; 形成在所述底部电极上延伸并且在所述钝化介电层上方具有窗口的可移除层,所述窗口暴露所述底部电极; 在可移除层上沉积与钝化介电层相同或不同的材料的电容器电介质层,其中第一部分通过窗口穿过暴露的底部电极,第二部分在可移除层之上,沉积层的厚度不同于 钝化层的厚度; 在其上留下所述第一部分在底部电极上去除其上的第二部分的可移除层; 并且在残留在底部电极上的第二部分上形成用于电容器的顶部电极。