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1. 发明申请

WO2009085709A1 APPARATUS AND METHOD FOR CONTROLLING EDGE PERFORMANCE IN AN INDUCTIVELY COUPLED PLASMA CHAMBER 审中-公开
标题翻译：用于控制电感耦合等离子体室的边缘性能的装置和方法
公开(公告)号：WO2009085709A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/086885
申请日：2008-12-15
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A. , MARK, Michael, J.
发明人： LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A. , MARK, Michael, J.
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/68742 , H01J37/321 , H01J37/32623 , H01L21/67069 , H01L21/68735
摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
摘要翻译：本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其构造成沿着基板的外边缘围绕基板，并且在该基板支撑表面的顶表面之间的高度差基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

2. 发明申请

WO2009085808A2 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：WO2009085808A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/087134
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
发明人： SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
IPC分类号： H05H1/34 , H01L21/30
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

3. 发明申请

WO2011009002A3 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
公开(公告)号：WO2011009002A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/042194
申请日：2010-07-15
申请人： APPLIED MATERIALS, INC. , CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
发明人： CHUC, Kien, N. , LIANG, Qiwei , NGUYEN, Hanh, D. , CHEN, Xinglong , MILLER, Matthew , PARK, Soonam , TRAN, Toan, Q. , KHAN, Adib , YANG, Jang-Gyoo , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/205
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

4. 发明申请

WO2011009002A2 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
标题翻译：化学气相沉积室的流动控制特性
公开(公告)号：WO2011009002A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042194
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
发明人： CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的设备和方法。在一个方面中，提供了一种气体分配组件，其包括环形主体，该环形主体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部以及形成的座进入内部环形壁，位于上部凹部中的上部板，其包括具有穿过其形成的多个第一孔的盘形主体以及定位在该底座上的底板，该底部板包括盘形主体，该盘形主体具有多个第二形成在其中的与第一孔对齐的孔，以及形成在第二孔与底板之间的多个第三孔，底板密封地联接到上板，以将多个第一孔和第二孔与多个第三孔。

5. 发明申请

WO2009085808A3 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：利用电感耦合等离子体技术处理基片的装置和方法
公开(公告)号：WO2009085808A3
公开(公告)日：2009-10-01
申请号：PCT/US2008087134
申请日：2008-12-17
申请人： APPLIED MATERIALS INC , SWENBERG JOHANES S , LIU WEI , NGUYEN HANH D , NGUYEN SON T , CURTIS ROGER , BOTTINI PHILIP A , MARK MICHAEL J , GUARINI THERESA KRAMER , CHOI WOONG
发明人： SWENBERG JOHANES S , LIU WEI , NGUYEN HANH D , NGUYEN SON T , CURTIS ROGER , BOTTINI PHILIP A , MARK MICHAEL J , GUARINI THERESA KRAMER , CHOI WOONG
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明总体上提供了用于处理半导体衬底的设备和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，该装置包括：腔室主体，该腔室主体限定配置成在其中处理衬底的处理空间;可调整的线圈组件，耦合到处理空间外的腔室主体;支撑基座，并被配置为在其中支撑衬底;以及气体注入组件，被配置为独立地向第一处理区和第二处理区供给处理气体。

6. 发明申请

WO2009085810A1 DUAL ZONE GAS INJECTION NOZZLE 审中-公开
标题翻译：双区气体喷射喷嘴
公开(公告)号：WO2009085810A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087139
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
发明人： LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
IPC分类号： H01L21/02
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

7. 发明申请

WO2009085708A1 METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 审中-公开
标题翻译：通过新型电动机线圈组件校正基线的方法
公开(公告)号：WO2009085708A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/086881
申请日：2008-12-15
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A.
发明人： LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A.
IPC分类号： H01L21/02
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
摘要翻译：本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。本发明的一个实施例提供一种被配置用于处理衬底的装置。该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

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