专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011109266A2 METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION 审中-公开
标题翻译：用于单步选择性硝化的方法和装置
公开(公告)号：WO2011109266A2
公开(公告)日：2011-09-09
申请号：PCT/US2011026423
申请日：2011-02-28
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , GUARINI THERESA KRAMER , ROGERS MATTHEW SCOTT , YOKOTA YOSHITAKA , SWENBERG JOHANES S , BEVAN MALCOLM J
发明人： GANGULY UDAYAN , GUARINI THERESA KRAMER , ROGERS MATTHEW SCOTT , YOKOTA YOSHITAKA , SWENBERG JOHANES S , BEVAN MALCOLM J
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译：提供了半导体衬底选择性一步氮化的方法和装置。通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成区域和基板支撑。

2. 发明申请

WO2009085808A2 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：WO2009085808A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/087134
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
发明人： SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
IPC分类号： H05H1/34 , H01L21/30
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

3. 发明申请

WO2009085808A3 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：利用电感耦合等离子体技术处理基片的装置和方法
公开(公告)号：WO2009085808A3
公开(公告)日：2009-10-01
申请号：PCT/US2008087134
申请日：2008-12-17
申请人： APPLIED MATERIALS INC , SWENBERG JOHANES S , LIU WEI , NGUYEN HANH D , NGUYEN SON T , CURTIS ROGER , BOTTINI PHILIP A , MARK MICHAEL J , GUARINI THERESA KRAMER , CHOI WOONG
发明人： SWENBERG JOHANES S , LIU WEI , NGUYEN HANH D , NGUYEN SON T , CURTIS ROGER , BOTTINI PHILIP A , MARK MICHAEL J , GUARINI THERESA KRAMER , CHOI WOONG
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明总体上提供了用于处理半导体衬底的设备和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，该装置包括：腔室主体，该腔室主体限定配置成在其中处理衬底的处理空间;可调整的线圈组件，耦合到处理空间外的腔室主体;支撑基座，并被配置为在其中支撑衬底;以及气体注入组件，被配置为独立地向第一处理区和第二处理区供给处理气体。

4. 发明申请

WO2009085810A1 DUAL ZONE GAS INJECTION NOZZLE 审中-公开
标题翻译：双区气体喷射喷嘴
公开(公告)号：WO2009085810A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087139
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
发明人： LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
IPC分类号： H01L21/02
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

5. 发明申请

WO2011109266A3 METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION 审中-公开
标题翻译：用于单步选择性硝化的方法和装置
公开(公告)号：WO2011109266A3
公开(公告)日：2012-03-01
申请号：PCT/US2011026423
申请日：2011-02-28
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , GUARINI THERESA KRAMER , ROGERS MATTHEW SCOTT , YOKOTA YOSHITAKA , SWENBERG JOHANES S , BEVAN MALCOLM J
发明人： GANGULY UDAYAN , GUARINI THERESA KRAMER , ROGERS MATTHEW SCOTT , YOKOTA YOSHITAKA , SWENBERG JOHANES S , BEVAN MALCOLM J
IPC分类号： H01L21/318
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译：提供了半导体衬底选择性一步氮化的方法和装置。通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成区域和基板支撑。

6. 发明申请

WO2011109266A4 METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION 审中-公开
公开(公告)号：WO2011109266A4
公开(公告)日：2011-09-09
申请号：PCT/US2011/026423
申请日：2011-02-28
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , GUARINI, Theresa Kramer , ROGERS, Matthew Scott , YOKOTA, Yoshitaka , SWENBERG, Johanes S. , BEVAN, Malcolm J.
发明人： GANGULY, Udayan , GUARINI, Theresa Kramer , ROGERS, Matthew Scott , YOKOTA, Yoshitaka , SWENBERG, Johanes S. , BEVAN, Malcolm J.
IPC分类号： H01L21/318
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式