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1. 发明申请

WO2009085808A2 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：WO2009085808A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/087134
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
发明人： SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
IPC分类号： H05H1/34 , H01L21/30
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

2. 发明申请

WO2009085810A1 DUAL ZONE GAS INJECTION NOZZLE 审中-公开
标题翻译：双区气体喷射喷嘴
公开(公告)号：WO2009085810A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087139
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
发明人： LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
IPC分类号： H01L21/02
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

3. 发明申请

WO2014066100A1 SHOWERHEAD DESIGNS OF A HWCVD CHAMBER 审中-公开
标题翻译： HWCVD室的淋浴设计
公开(公告)号：WO2014066100A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/065011
申请日：2013-10-15
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Hanh D. , CRUZ, Joe Griffith
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/271 , C23C16/276 , C23C16/44
摘要： Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.
摘要翻译：提供了处理室的实施例以及用于在这些处理室内执行HWCVD工艺的方法和在基板的表面上从两种或更多种源化合物沉积薄膜。在一些实施例中，处理室包括布置在金属丝组件和衬底处理区之间的喷头组件。淋浴头组件包括喷头体和双面面板，其中具有多个第一通道和第二通道。第一源化合物通过金属丝组件输送以形成第一源化合物的自由基，并且通过第一通道进入衬底处理区而不形成任何等离子体。第二源化合物通过喷头体输送到双区面板的第二通道中，而不通过金属丝组件，并且不与自由基接触直至到达衬底处理区。

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