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    • 9. 发明申请
    • SEMICONDUCTOR WAFER RE-USE USING CHEMICAL MECHANICAL POLISHING
    • 半导体晶片再使用化学机械抛光
    • WO2011053560A2
    • 2011-05-05
    • PCT/US2010054015
    • 2010-10-26
    • CORNING INCBANKAITIS JONASMOORE MICHAEL J
    • BANKAITIS JONASMOORE MICHAEL J
    • H01L21/304
    • H01L21/02024H01L21/02032H01L21/76254
    • Methods and apparatus for reducing damage of a semiconductor donor wafer include the steps of: (a) rotating a polishing pad, rotating the semiconductor donor wafer, applying a polishing slurry to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together; and (b) rotating the polishing pad and the semiconductor donor wafer, discontinuing the application of the polishing slurry, applying a rinsing fluid to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together, wherein step (a) followed by step (b) is carried out in sequence at least two times, and at least one of the following are reduced in at least two successive intervals of step (a): (i) a pressure at which the semiconductor donor wafer and the polishing pad are pressed together, (ii) a mean particle size of an abrasive within the polishing slurry, and (iii) a concentration of the slurry in water and stabilizers.
    • 用于减少半导体施主晶片的损坏的方法和设备包括以下步骤:(a)旋转抛光垫,旋转半导体施主晶片,将抛光浆施加到抛光垫,并且将半导体施主晶片和抛光垫压在一起 ; 和(b)旋转抛光垫和半导体施主晶片,停止施加抛光浆料,将漂洗流体施加到抛光垫上,并将半导体施主晶片和抛光垫压在一起,其中步骤(a)然后是 步骤(b)依次进行至少两次,并且在步骤(a)的至少两个连续间隔中减少至少一个:(i)半导体给体晶片和抛光垫的压力 (ii)研磨浆料内的研磨剂的平均粒径,和(iii)浆料在水中和稳定剂中的浓度。