专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2017192312A1 PARASITIC CHARGE CONTROL FOR III-N MATERIALS ON SILICON 审中-公开
标题翻译： III-N材料在硅衬底上的寄生电荷控制
公开(公告)号：WO2017192312A1
公开(公告)日：2017-11-09
申请号：PCT/US2017/029437
申请日：2017-04-25
申请人： IQE, PLC , CLARK, Andrew , DARGIS, Rytis , MARCHAND, Hugues , LABOUTIN, Oleg , KAO, Chen-Kai , LO, Chien-Fong , LEBBY, Michael , PELZEL, Rodney
发明人： CLARK, Andrew , DARGIS, Rytis , MARCHAND, Hugues , LABOUTIN, Oleg , KAO, Chen-Kai , LO, Chien-Fong , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02483 , H01L21/0254
摘要： A structure can include a substrate layer with an interface and a carrier concentration at the interface, a rare earth oxide barrier layer grown over the substrate layer, and a Group III layer grown over the rare earth oxide barrier layer. The carrier concentration at the interface can be different by more than an order of magnitude than the bulk carrier concentration. The rare earth oxide layer can include a rare earth oxide material and can prevent diffusion of Group III species into the substrate layer. The Group III layer can include a Group III element.
摘要翻译：一种结构可以包括在界面处具有界面和载流子浓度的衬底层，在衬底层上生长的稀土氧化物阻挡层和在稀土氧化物阻挡层上生长的III族层层。界面处的载流子浓度可以与散货载流子浓度相差超过一个数量级。稀土氧化物层可以包括稀土氧化物材料并且可以防止III族物质扩散到衬底层中。 III组层可以包含III组元素。

2. 发明申请

WO2019143945A1 POROUS DISTRIBUTED BRAGG REFLECTORS FOR LASER APPLICATIONS 审中-公开
公开(公告)号：WO2019143945A1
公开(公告)日：2019-07-25
申请号：PCT/US2019/014204
申请日：2019-01-18
申请人： IQE PLC , HAMMOND, Rich , PELZEL, Rodney , NELSON, Drew , CLARK, Andrew , CHESKIS, David , LEBBY, Michael
发明人： HAMMOND, Rich , PELZEL, Rodney , NELSON, Drew , CLARK, Andrew , CHESKIS, David , LEBBY, Michael
IPC分类号： H01S5/183 , H01S5/40 , H01S5/42
CPC分类号： H01S5/0206 , H01S5/0261 , H01S5/1071 , H01S5/18319 , H01S5/18361 , H01S5/34 , H01S5/4087 , H01S5/423
摘要： Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

3. 发明申请

WO2017083150A1 LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES AND EPITAXIAL ALUMINUM NITRIDE 审中-公开
标题翻译：使用稀土氧化物和外延氮化铝制造射频滤波器的层结构
公开(公告)号：WO2017083150A1
公开(公告)日：2017-05-18
申请号：PCT/US2016/060187
申请日：2016-11-02
申请人： IQE, PLC , PELZEL, Rodney , DARGIS, Rytis , CLARK, Andrew , WILLIAMS, Howard , CHIN, Patrick , LEBBY, Michael
发明人： PELZEL, Rodney , DARGIS, Rytis , CLARK, Andrew , WILLIAMS, Howard , CHIN, Patrick , LEBBY, Michael
IPC分类号： H03H3/02 , H03H3/08 , H03H9/17 , H01L41/08 , H01L41/083 , H01L41/319
CPC分类号： H03H1/0007 , H01L23/66 , H01L27/0688 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/778 , H01L41/0815 , H01L41/083 , H01L41/319 , H01L2223/6672 , H03H3/02 , H03H3/08 , H03H9/175 , H03H2001/0064 , H03H2001/0085 , H03H2003/025
摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure (300) can include an epitaxial crystalline rare earth oxide (REO) layer (306) over a substrate (302), a first epitaxial electrode layer (310) over the crystalline REO layer (306), and an epitaxial piezoelectric layer (312) over the first epitaxial electrode layer (310). The layer structure (300) can further include a second electrode layer (314) over the epitaxial piezoelectric layer (312). The first electrode layer (310) can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer (310) can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
摘要翻译：可以使用稀土氧化物和外延氮化铝制造用于RF滤波器的层结构，以及用于生长层结构的方法。层结构（300）可以包括衬底（302）上的外延晶体稀土氧化物（REO）层（306），晶体REO层（306）上的第一外延电极层（310）以及外延压电层（312）在第一外延电极层（310）上方。层结构（300）可以进一步包括在外延压电层（312）之上的第二电极层（314）。第一电极层（310）可以包括外延金属。外延金属可以是单晶的。第一电极层（310）可以包括稀土磷酸盐和稀土硅化物（RESi）中的一种或多种。

4. 发明申请

WO2019143942A1 RE-BASED INTEGRATED PHOTONIC AND ELECTRONIC LAYERED STRUCTURES 审中-公开
公开(公告)号：WO2019143942A1
公开(公告)日：2019-07-25
申请号：PCT/US2019/014201
申请日：2019-01-18
申请人： IQE PLC , CLARK, Andrew , HAMMOND, Rich , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
发明人： CLARK, Andrew , HAMMOND, Rich , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01S5/026 , H01L21/02 , H01L21/8258
摘要： Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.

5. 发明申请

WO2017210597A1 RARE EARTH PNICTIDES FOR STRAIN MANAGEMENT 审中-公开
标题翻译：用于应变管理的稀土地球蛋白
公开(公告)号：WO2017210597A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/035744
申请日：2017-06-02
申请人： IQE, PLC , CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
摘要： Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.
摘要翻译：这里描述的系统和方法可以包括具有第一晶格常数的第一半导体层，外延生长在第一半导体上的稀土pnictide缓冲区，其中稀土pnictide缓冲区的第一区域邻近第一半导体具有小于1％的净应变，外延生长在稀土pnictide缓冲液上的第二半导体层，其中与第二半导体相邻的稀土pnictide缓冲液的第二区域具有作为所需应变的净应变并且其中所述稀土pnictide缓冲剂可以包含一种或多种稀土元素和一种或多种V族元素。在一些示例中，期望的应变近似为零。

6. 发明申请

WO2018057797A1 INTEGRATED EPITAXIAL METAL ELECTRODES 审中-公开
标题翻译：综合外延金属电极
公开(公告)号：WO2018057797A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/052803
申请日：2017-09-21
申请人： IQE, PLC , PELZEL, Rodney , CLARK, Andrew , DARGIS, Rytis , CHIN, Patrick , LEBBY, Michael
发明人： PELZEL, Rodney , CLARK, Andrew , DARGIS, Rytis , CHIN, Patrick , LEBBY, Michael
IPC分类号： H01L21/02
摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure (100), comprising a substrate (102), a first rare earth oxide layer (104) epitaxially grown over the substrate, a first metal layer (106) epitaxially grown over the rare earth oxide layer, and a first semiconductor layer (108) epitaxially grown over the first metal layer.
摘要翻译：这里描述的系统和方法包括在稀土氧化物和半导体层之间的外延金属层。描述了系统和方法以生长分层结构（100），所述分层结构包括衬底（102），在衬底上外延生长的第一稀土氧化物层（104），在稀土氧化物上外延生长的第一金属层（106）层和在第一金属层上外延生长的第一半导体层（108）。

7. 发明申请

WO2017222990A1 EPITAXIAL ALN/RARE EARTH OXIDE STRUCTURE FOR RF FILTER APPLICATIONS 审中-公开
标题翻译：用于射频滤波器的外延ALN /稀土氧化物结构
公开(公告)号：WO2017222990A1
公开(公告)日：2017-12-28
申请号：PCT/US2017/038142
申请日：2017-06-19
申请人： IQE, PLC , WANG, Wang, Nang , CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
发明人： WANG, Wang, Nang , CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L41/08 , H01L41/319 , H03H3/02 , H03H9/02
摘要： Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.
摘要翻译：提出了包括在半导体上的稀土氧化物层上外延生长的金属层上外延生长的晶体压电III-N层（1110,1032）的层结构（1100,1030）（1102,1002）。稀土氧化物层包括至少两个分立部分（1104,1004），并且金属层包括与相邻分立部分部分重叠的至少一个金属部分（1108,1006），优选地在气隙（1008）上形成桥，，特别适用于射频滤波器。

8. 发明申请

WO2017210629A1 RARE EARTH INTERLAYERS FOR MECHANICALLY BONDING DISSIMILAR SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于机械结合异质半导体晶片的稀土地夹层
公开(公告)号：WO2017210629A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/035805
申请日：2017-06-02
申请人： IQE, PLC , CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
摘要： Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.
摘要翻译：这里描述的结构可以包括用于在第一III-V族半导体层和第二半导体层之间形成的机械结合夹层。机械结合的中间层通过III-V族半导体层和第二半导体层（其可以是硅）之间的应变平衡来提供减小的晶格应变。

9. 发明申请

WO2017210622A1 PNICTIDE BUFFER STRUCTURES AND DEVICES FOR GAN BASE APPLICATIONS 审中-公开
标题翻译：用于GAN BASE应用的PNICTIDE缓冲结构和器件
公开(公告)号：WO2017210622A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/035794
申请日：2017-06-02
申请人： IQE, PLC , CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
摘要： A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.
摘要翻译：结构可以包括具有第一晶格常数的III-N层，具有在III-N层上外延生长的第二晶格常数的第一稀土pnictide层，具有第二稀土pnictide层的第二稀土pnictide层在第一稀土磷杂质层上外延生长的第三晶格常数和在第二稀土磷质膜层上外延生长第四晶格常数的半导体层。第一晶格常数与第二晶格常数之间的第一差异与第三晶格常数与第四晶格常数之间的第二差异小于百分之一。

10. 发明申请

WO2017180531A1 GROUP III SEMICONDUCTOR EPITAXY FORMED ON SILICON VIA SINGLE CRYSTAL REN AND REO BUFFER LAYERS 审中-公开
标题翻译：通过单晶REN和REO缓冲层在硅上形成的III族半导体外延
公开(公告)号：WO2017180531A1
公开(公告)日：2017-10-19
申请号：PCT/US2017/026856
申请日：2017-04-10
申请人： IQE, PLC , DARGIS, Rytis , CLARK, Andrew , LEBBY, Michael , PELZEL, Rodney
发明人： DARGIS, Rytis , CLARK, Andrew , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
CPC分类号： H01L21/02483 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02516 , H01L21/02538 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L29/045
摘要： Layer structures are described for the formation of Group III-V semiconductor material over Si and Si . Various buffer layers and interfaces reduce the lattice strain between the Group III-V semiconductor material and the Si or Si layers, allowing for the epitaxial formation of high quality Group III-V semiconductor material.
摘要翻译：描述了用于在Si＆lt; 110＆gt;上形成III-V族半导体材料的层结构。和Si＆lt; 100＆gt ;. 各种缓冲层和界面减小III-V族半导体材料和Si＆lt; 110＆gt; 或Si＆lt; 100＆gt; 层，允许外延形成高质量的III-V族半导体材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式