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1. 发明申请

WO2013142442A1 ELECTRON BEAM POLISHING OF ALUMINUM 审中-公开
标题翻译：铝的电子束抛光
公开(公告)号：WO2013142442A1
公开(公告)日：2013-09-26
申请号：PCT/US2013/032860
申请日：2013-03-18
申请人： APPLE INC.
发明人： LANCASTER-LAROCQUE, Simon R. , RAHARJO, Purwadi , UEMURA, Kensuke
IPC分类号： C23F4/04 , C23F1/20 , H01L21/3065
CPC分类号： B23K15/0013 , B44C1/227 , C25F3/20
摘要： A highly polished surface on an aluminum substrate is formed using any number of machining processes. During the machining process, intermetallic compounds are typically generated at a top surface area of the aluminum substrate caused by spot heat generated between the tool edge and the cut tip of the aluminum substrate during the cutting process. The intermetallic compounds can leave surface imperfections after conventional mechanical polishing operations that render the surface of the aluminum substrate difficult to obtain a desired high glossiness due to exfoliation of the intermetallic compounds from the top surface. In order to remove the effect of the intermetallic compounds, an electron beam is applied to the surface resulting in Joule heating to melt down a top surface zone. In this way, any tooling traces and intermetallic compounds are eliminated.
摘要翻译：使用任何数量的加工工艺形成铝基板上高度抛光的表面。在加工过程中，金属间化合物通常在铝基板的顶表面区域产生，这是由于在切割过程中工具边缘与铝基板的切割尖端之间产生的点热引起的。金属间化合物可以在常规机械抛光操作之后留下表面缺陷，使得铝基材的表面由于顶表面的金属间化合物的剥落而难以获得期望的高光泽度。为了去除金属间化合物的影响，电子束被施加到表面，导致焦耳加热以使顶表面区域熔化。以这种方式，消除了任何工具痕迹和金属间化合物。

2. 发明申请

WO2017091815A1 FORMATION OF THREE-DIMENSIONAL MATERIALS BY COMBINING CATALYTIC AND PRECURSOR MATERIALS 审中-公开
标题翻译：催化剂和前体材料结合形成三维材料
公开(公告)号：WO2017091815A1
公开(公告)日：2017-06-01
申请号：PCT/US2016/063776
申请日：2016-11-25
申请人： WILLIAM MARSH RICE UNIVERSITY , TIANJIN UNIVERSITY
发明人： TOUR, James, M. , SHA, Junwei , ZHAO, Naiqin
IPC分类号： C01B32/15 , C01B32/162 , C01B32/184 , B01J35/02 , C23F4/04 , B82Y40/00 , B82Y30/00
CPC分类号： B82Y40/00 , B82Y30/00 , H01M4/583 , H01M4/96
摘要： Embodiments of the present disclosure pertain to methods of making three-dimensional materials by combining a catalytic material with a precursor material and forming the three- dimensional material from the precursor material in the presence of the catalytic material. The three-dimensional material may be formed on surfaces and internal cavities of the catalytic material. The formed three-dimensional material includes a plurality of connected units that are derived from the precursor materials. The methods of the present disclosure may also include steps of separating catalytic materials from the formed three-dimensional materials and incorporating the three-dimensional materials as a component of an energy storage device (e.g., as an electrode in a capacitor). Additional embodiments of the present disclosure pertain to the formed three-dimensional materials.
摘要翻译：本公开的实施例涉及通过将催化材料与前体材料组合并且在催化材料存在下由前体材料形成三维材料来制造三维材料的方法。三维材料可以形成在催化材料的表面和内腔上。所形成的三维材料包括源自前体材料的多个连接单元。本公开的方法还可以包括从形成的三维材料分离催化材料并且将三维材料结合为能量存储装置的组件（例如，作为电容器中的电极）的步骤。本公开的另外的实施方式涉及所形成的三维材料。

3. 发明申请

WO2011023798A1 TREATMENT OF PARTS WITH METALLIZED FINISH AREAS WITH A DIFFERENTIATED APPEARANCE 审中-公开
标题翻译：用金属化表面处理具有差异化外观的部件
公开(公告)号：WO2011023798A1
公开(公告)日：2011-03-03
申请号：PCT/EP2010/062558
申请日：2010-08-27
申请人： ZANINI AUTO GRUP, S.A. , MAYER PUJADAS, Augusto , SANAHUJA CLOT, José
发明人： MAYER PUJADAS, Augusto , SANAHUJA CLOT, José
IPC分类号： B44C1/22 , B44C3/00 , C25D5/48 , C25D5/12 , C23F1/02 , C23F1/44 , C23F4/02 , C23F4/04 , B23K26/00
CPC分类号： C23F4/02 , B23K26/361 , B44F1/02 , C23F1/02 , C23F1/44 , C25D5/12 , C25D5/16 , C25D5/48
摘要： The invention relates to a process for the treatment of parts for creating a surface with areas with shiny and matte appearances, in which on the surface previously coated with a first layer of copper and a second layer of metal a selective etching of the second layer is performed, wherein the selective etching of the second layer is performed according to the area or areas to be glazed with respect to the rest of the part. The process allows a finish with areas of a different shine (from mirror shine to matte), the differences in thickness of which cannot be observed by the human eye without optical aids.
摘要翻译：本发明涉及一种用于处理用于产生具有光泽和无光泽外观的区域的表面的部件的方法，其中在预先涂覆有第一层铜的表面和第二层金属上选择性蚀刻第二层其中，根据相对于所述部件的其余部分而要上釉的面积或面积进行所述第二层的选择性蚀刻。该过程允许具有不同光泽（从镜面光泽到无光泽）的区域的光洁度，其没有光学辅助装置的人眼不能观察到厚度的差异。

4. 发明申请

WO2010141257A2 METHOD AND APPARATUS FOR ETCHING 审中-公开
标题翻译：用于蚀刻的方法和装置
公开(公告)号：WO2010141257A2
公开(公告)日：2010-12-09
申请号：PCT/US2010/035959
申请日：2010-05-24
申请人： APPLIED MATERIALS, INC. , CHESHIRE, Alan
发明人： CHESHIRE, Alan
IPC分类号： C23F4/04 , H01L21/3065
CPC分类号： B81C1/00531 , B81C2201/0112 , H01J37/321 , H01J37/3244 , H01J37/32449 , H01L21/30655
摘要： Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that includes a) depositing a polymer on a substrate in an etch reactor, b) etching the substrate using a gas mixture including a fluorine-containing gas and oxygen in the etch reactor, c) etching a silicon-containing layer the substrate using a fluorine-containing gas without mixing oxygen in the etch reactor, and d) repeating a), b) and c) until an endpoint of a feature etched into the silicon-containing layer is reached.
摘要翻译：本发明的实施例涉及一种基板蚀刻方法和装置。在一个实施例中，提供了一种在等离子体蚀刻反应器中蚀刻衬底的方法，其包括：a）在蚀刻反应器中在衬底上沉积聚合物，b）使用包含含氟气体和氧的气体混合物蚀刻衬底蚀刻反应器，c）使用含氟气体在含氧气体中蚀刻含硅层，而不在蚀刻反应器中混合氧，以及d）重复a），b）和c），直到蚀刻到硅中的特征的端点到达层。

5. 发明申请

WO2014055982A1 BULK DEPOSITION FOR TILTED MILL PROTECTION 审中-公开
标题翻译：用于倾斜式铣刀保护的大块沉积
公开(公告)号：WO2014055982A1
公开(公告)日：2014-04-10
申请号：PCT/US2013/063704
申请日：2013-10-07
申请人： FEI COMPANY
发明人： STONE, Stacey , LEE, Sang Hoon , BLACKWOOD, Jeffrey , SCHMIDT, Michael
IPC分类号： B23K15/08 , B23K15/00 , C23F4/04
CPC分类号： H01J37/3005 , G01N1/32 , G01N23/2255 , G01N2223/104 , G01N2223/611 , H01J37/3007 , H01J37/3053 , H01J37/3056 , H01J37/31 , H01J2237/063 , H01J2237/08 , H01J2237/2813 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749
摘要： To reduce artifacts in a surface exposed by a focused ion beam for viewing, a trench is milled next to the region of interest, and the trench is filled to create a bulkhead. The ion beam is directed through the bulkhead to expose a portion of the region of interest for viewing. The trench is filled, for example, by charged particle beam-induced deposition. The trench is typically milled and filled from the top down, and then the ion beam is angled with respect to the sample surface to expose the region of interest.
摘要翻译：为了减少由聚焦离子束暴露的表面中的人造物进行观察，在感兴趣区域旁边研磨沟槽，并且填充沟槽以形成隔板。离子束被引导通过隔板以暴露感兴趣区域的一部分以供观察。例如，通过带电粒子束诱导沉积来填充沟槽。沟槽通常从顶部向下铣削和填充，然后离子束相对于样品表面成角度以暴露感兴趣的区域。

6. 发明申请

WO2011065965A2 AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL 审中-公开
标题翻译：一个带有安全帽的静电掣子
公开(公告)号：WO2011065965A2
公开(公告)日：2011-06-03
申请号：PCT/US2010/003013
申请日：2010-11-22
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , MANKIDY, Pratik , KIMBALL, Chris
发明人： DHINDSA, Rajinder , MANKIDY, Pratik , KIMBALL, Chris
IPC分类号： C23C16/44 , C23C16/458 , H01L21/48 , C23F4/04
CPC分类号： H01L21/6831 , C23C16/4405 , C23C16/4586 , H01J37/32541 , H01L21/68735
摘要： A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.
摘要翻译：用于等离子体处理室的衬底支撑件在其上周边具有成角度的侧壁。基板被等离子体处理期间由支撑在基板支撑件的上基板支撑表面上的基板的下方的边缘环包围。成角度的侧壁是暴露于等离子体处理期间受副产物沉积的基板支架的唯一表面。成角度的侧壁在原位室清洁过程期间增强副产物沉积的溅射速率，其中供应到室的清洁气体被激发到等离子体状态以清洁副产物沉积。

7. 发明申请

WO2005052989A3 DIELECTRIC FILMS FOR NARROW GAP-FILL APPLICATIONS 审中-公开
标题翻译：用于NARROW GAP-FILL应用的电介质膜
公开(公告)号：WO2005052989A3
公开(公告)日：2005-10-06
申请号：PCT/US2004033035
申请日：2004-10-06
申请人： HONEYWELL INT INC , ENDISCH DENIS , LEUNG ROGER , XIE SONGYUAN , HACKER NIGEL , DENG YANPEI
发明人： ENDISCH DENIS , LEUNG ROGER , XIE SONGYUAN , HACKER NIGEL , DENG YANPEI
IPC分类号： H01L21/316 , C08L27/14 , C23F4/04 , H01L21/31
CPC分类号： H01L21/76837 , H01L21/316
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
摘要翻译：使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。电介质材料特别适用于预金属电介质和浅沟槽隔离应用。根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充，耐热稳定的，耐蚀刻的介电材料。

8. 发明申请

WO2021239877A1 FORMATION OF MONOLITHIC NANOSTRUCTURES ON PROSTHETIC DEVICES 审中-公开
公开(公告)号：WO2021239877A1
公开(公告)日：2021-12-02
申请号：PCT/EP2021/064209
申请日：2021-05-27
申请人： DANMARKS TEKNISKE UNIVERSITET
发明人： OU, Yiyu , PETERSEN, Paul Michael
IPC分类号： A61L27/06 , A61C8/00 , A61L27/50 , A61L27/56 , C23C14/58 , C23F1/02 , C23F1/44 , C23F4/04
摘要： The present disclosure relates to a method for formation of monolithic nanostructures on an implantable device, the method comprising: a. depositing a metal film to a surface of the implantable device; b. heating the metal film for a period of time, such that the metal film transforms into multiple discrete nanoparticles, the multiple nanoparticles thereby forming an etch mask on said surface of the implantable device; c. etching the implantable device such that said surface of the implantable device is etched through the etch mask, thereby forming monolithic nanostructures in said surface of the implantable device; and d. (optionally) removing the etch mask, such as by immersion in an aqua regia solution.

9. 发明申请

WO2012142709A1 METHOD AND COMPOSITIONS FOR REMOVING MICROELECTRONIC COMPONENTS FROM CIRCUIT BOARDS 审中-公开
标题翻译：从电路板移除微电子元件的方法和组合
公开(公告)号：WO2012142709A1
公开(公告)日：2012-10-26
申请号：PCT/CA2012/050250
申请日：2012-04-19
申请人： DYNAJOIN CORPORATION , MCISAAC, Douglas J. , WHITNEY, Mark A. , CLEMMER, Ryan
发明人： MCISAAC, Douglas J. , WHITNEY, Mark A. , CLEMMER, Ryan
IPC分类号： B23K1/018 , C23F4/04
CPC分类号： H05K3/225 , B23K1/018 , B23K35/26 , H05K2203/1163 , H05K2203/176
摘要： This invention relates to materials and methods for removing components which have been soldered to other distinct components, or directly to a printed circuit board, using one or more connection materials, each such connection material having a particular melting temperature. For a given connection material, a removal material is comprised of at least one metallic constituent having a given melting temperature such that when contacted to the connection material, it can form an alloy having an alloy melting temperature below the particular melting temperature. This alloy melting temperature may be above or below the given melting temperature, and may be above or below room temperature. Heating above this alloy melting temperature results in at least partial melting of the connection material, allowing the removal of the soldered component at temperatures below the particular melting temperature.
摘要翻译：本发明涉及用于使用一种或多种连接材料去除已经被焊接到其它不同部件或直接连接到印刷电路板的部件的材料和方法，每个这样的连接材料具有特定的熔化温度。对于给定的连接材料，去除材料由具有给定熔融温度的至少一种金属组分构成，使得当与连接材料接触时，其可以形成合金熔化温度低于特定熔融温度的合金。该合金熔融温度可以高于或低于给定的熔融温度，并且可以高于或低于室温。在该合金熔化温度以上的加热导致连接材料的至少部分熔化，允许在低于特定熔融温度的温度下去除焊接部件。

10. 发明申请

WO2011060444A3 GAS DELIVERY FOR BEAM PROCESSING SYSTEMS 审中-公开
标题翻译：用于波束加工系统的气体输送
公开(公告)号：WO2011060444A3
公开(公告)日：2011-12-22
申请号：PCT/US2010056895
申请日：2010-11-16
申请人： FEI CO , CHANDLER CLIVE D , RANDOLPH STEVEN , HARTIGAN GAVIN
发明人： CHANDLER CLIVE D , RANDOLPH STEVEN , HARTIGAN GAVIN
IPC分类号： C23C16/455 , C23C16/44 , C23F4/04 , H01L21/3065
CPC分类号： C23C16/047 , C23C16/4485 , C23C16/45523 , C23C16/45561 , H01J2237/006
摘要： Gas flow from multiple gas sources into a sample chamber of a beam system is controlled by a cycling valve for each gas source, with the gas pressure in the sample chamber being determined by the relative time that the valve is opened and the upstream pressure at the valve. A gas valve positioned inside the vacuum chamber allows rapid response in shutting off a gas. In some preferred embodiments, a precursor gas is supplied from a solid or liquid material in a container that remains outside the vacuum system while in use and which is readily connected or disconnected to the gas injection system without significant leakage.
摘要翻译：来自多个气源的气体流入射束系统的样品室由每个气源的循环阀控制，样品室中的气体压力由阀打开的相对时间和阀。位于真空室内的气阀可快速切断气体。在一些优选的实施方案中，前体气体由容器中的固体或液体材料供应，该容器在使用时保持在真空系统外部，并且容易连接或断开气体注入系统而没有显着的泄漏。

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