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1. 发明申请

WO2007109410A3 METHOD AND APPARATUS FOR REDUCING PARTICLE CONTAMINATION IN A DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2007109410A3
公开(公告)日：2007-09-27
申请号：PCT/US2007/063285
申请日：2007-03-05
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
发明人： SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
IPC分类号： C23C16/44
摘要： A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.

2. 发明申请

WO2006057710A1 A SOLID PRECURSOR DELIVERY SYSTEM COMPRISING REPLACEABLE STACKABLE TRAYS 审中-公开
标题翻译：一个包含可更换堆叠托盘的固体前驱体输送系统
公开(公告)号：WO2006057710A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/035583
申请日：2005-10-03
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
IPC分类号： C23C16/448
CPC分类号： C23C16/16 , C23C16/4481
摘要： A replaceable precursor tray for use with a high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of solid precursor. The multi-tray solid precursor evaporation system (50, 150, 300, 300') is configured to be coupled to the process chamber (10, 110) of a thin film deposition system (1, 100), and it includes a base tray (330) with one or more stackable upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (370, 370') and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').
摘要翻译：用于与高电导，多托盘固体前体蒸发系统（50,150,300,300'）结合高电导蒸气输送系统使用的可替换的前体托盘被描述为通过增加固体前体的暴露表面积来提高沉积速率。多托盘固体前体蒸发系统（50,150,300,300'）被配置为耦合到薄膜沉积系统（1,100）的处理室（10,110），并且其包括底盘（330）具有一个或多个可堆叠的上托盘（340）。每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。例如，载气在膜前体（350）内向内流动，并且垂直向上流过可堆叠托盘（370,370'）内的流动通道（318）并且通过固体前体蒸发系统中的出口（322） 50,150,300,300'）。

3. 发明申请

WO2007117898A1 SYSTEM FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：将前驱气体引入蒸发器沉积系统的系统
公开(公告)号：WO2007117898A1
公开(公告)日：2007-10-18
申请号：PCT/US2007/064466
申请日：2007-03-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi
发明人： SUZUKI, Kenji , GOMI, Atsushi
IPC分类号： C23C16/455 , C23C16/16
CPC分类号： C23C16/45574 , C23C16/16 , C23C16/45565
摘要： A system for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery system includes means for introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.
摘要翻译：描述了用于将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的系统。蒸汽输送系统包括用于将稀释气体引入前体蒸气并调节稀释气体添加物的空间分布的装置，以便影响沉积膜的性质的改善。

4. 发明申请

WO2006058310A1 MULTI-TRAY FILM PRECURSOR EVAPORATION SYSTEM AND THIN FILM DEPOSITION SYSTEM INCORPORATING SAME 审中-公开
标题翻译：多层膜前驱体蒸发系统和薄膜沉积系统
公开(公告)号：WO2006058310A1
公开(公告)日：2006-06-01
申请号：PCT/US2005/043018
申请日：2005-11-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke
CPC分类号： C23C16/4481 , C23C16/16
摘要： A high conductance, multi-tray solid precursor evaporation system (50, 150, 300, 300') coupled with a high conductance vapor delivery system (40, 140) is described for increasing deposition rate by increasing exposed surface area of solid precursor (350). The multi-tray solid precursor evaporation system (50, 150, 300, 300') includes a base tray (330) with one or more upper trays (340). Each tray (330, 340) is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray (330, 340) is configured to provide for a high conductance flow of carrier gas over the film precursor (350) while the film precursor (350) is heated. For example, the carrier gas flows inward over the film precursor (350), and vertically upward through a flow channel (318) within the stackable trays (340) and through an outlet (322) in the solid precursor evaporation system (50, 150, 300, 300').
摘要翻译：描述了与高电导蒸气输送系统（40,140）耦合的高电导多托盘固体前体蒸发系统（50,150,300,300'），以通过增加固体前体（350）的暴露表面积来提高沉积速率）。多托盘固体前体蒸发系统（50,150,300,300'）包括具有一个或多个上托盘（340）的基托（330）。每个托盘（330,340）被配置为以例如固体粉末形式或固体片剂形式支撑并保持膜前体（350）。另外，每个托盘（330,340）构造成在膜前体（350）被加热的同时提供载气在膜前体（350）上的高电导流。例如，载气在膜前体（350）上向内流动，并且垂直向上流过可堆叠托盘（340）内的流动通道（318）并通过固体前体蒸发系统（50,150）中的出口（322），300,300'）。

5. 发明申请

WO2007095407A1 FILM PRECURSOR EVAPORATION SYSTEM AND METHOD OF USING 审中-公开
标题翻译：电影前驱体蒸发系统及其使用方法
公开(公告)号：WO2007095407A1
公开(公告)日：2007-08-23
申请号：PCT/US2007/060561
申请日：2007-01-16
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke , ISHIZAKA, Tadahiro
发明人： SUZUKI, Kenji , GUIDOTTI, Emmanuel, P. , LEUSINK, Gerrit, J. , HARA, Masamichi , KUROIWA, Daisuke , ISHIZAKA, Tadahiro
IPC分类号： C23C16/448
CPC分类号： C23C16/4481
摘要： A high conductance, multi-tray film precursor evaporation system (1 ) coupled with a high conductance vapor delivery system (40) is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system (50) includes one or more trays (340). Each tray is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel (318) within the stackable trays and through an outlet (322) in the solid precursor evaporation system.
摘要翻译：描述了与高电导蒸气输送系统（40）耦合的高电导多托盘膜前体蒸发系统（1），以通过增加膜前体的暴露表面积来提高沉积速率。多托盘膜前体蒸发系统（50）包括一个或多个托盘（340）。每个托盘构造成支撑并保持例如固体粉末形式或固体片剂形式的膜前体（350）。此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。例如，载气在膜前体向内流动，并且垂直向上流过可堆叠托盘内的流动通道（318）并通过固体前驱物蒸发系统中的出口（322）。

6. 发明申请

WO2007117803A2 METHOD FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：将前驱气体引入蒸发沉积系统的方法
公开(公告)号：WO2007117803A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/063574
申请日：2007-03-08
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi
发明人： SUZUKI, Kenji , GOMI, Atsushi
CPC分类号： C23C16/16 , C23C16/45565 , C23C16/45574 , C23C16/45576
摘要： A method for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery method includes introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.
摘要翻译：描述了将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的方法。蒸气输送方法包括向前体蒸气引入稀释气体并调节稀释气体添加物的空间分布，以便影响沉积膜的性质的改善。

7. 发明申请

WO2007040704A1 METHOD FOR INTEGRATING A RUTHENIUM LAYER WITH BULK COPPER IN COPPER METALLIZATION 审中-公开
标题翻译：在铜冶金中用粗铜制成的金属层的方法
公开(公告)号：WO2007040704A1
公开(公告)日：2007-04-12
申请号：PCT/US2006/026688
申请日：2006-07-10
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji
发明人： SUZUKI, Kenji
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/56 , H01L21/28556 , H01L21/76856 , H01L21/76864 , H01L21/76873 , H01L21/76874
摘要： A method (400, 401 ) for integrating a Ru layer (504, 614) with bulk Cu (510, 622) in semiconductor manufacturing. The method includes depositing a Ru layer (504, 614) onto a substrate (25, 125, 502, 601 ) in a chemical vapor deposition process, modifying the deposited Ru layer (504, 614) by oxidation, or nitridation, or a combination thereof, depositing an ultra thin Cu layer (508, 618) onto the modified Ru layer (506, 616), and plating a Cu layer (510, 622) onto the ultra thin Cu layer (508, 618).
摘要翻译：一种用于在半导体制造中集成Ru层（504,614）与体Cu（510,622）的方法（400,401）。该方法包括在化学气相沉积工艺中将Ru层（504,614）沉积到衬底（25,125,502,601）上，通过氧化或氮化或组合来改变沉积的Ru层（504,614）在所述改性Ru层（506,616）上沉积超薄Cu层（508,618），以及将Cu层（510,622）镀覆到所述超薄Cu层（508,618）上。

8. 发明申请

WO2006104853A1 LOW-TEMPERATURE CHEMICAL VAPOR DEPOSITION OF LOW-RESISTIVITY RUTHENIUM LAYERS 审中-公开
标题翻译：低电阻率的低温化学气相沉积
公开(公告)号：WO2006104853A1
公开(公告)日：2006-10-05
申请号：PCT/US2006/010606
申请日：2006-03-23
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji
发明人： SUZUKI, Kenji
IPC分类号： H01L21/768 , H01L23/532 , C23C16/16 , C23C16/448
CPC分类号： H01L23/53238 , C23C16/045 , C23C16/16 , H01L21/28556 , H01L21/76843 , H01L21/76871 , H01L2924/0002 , H01L2924/00
摘要： A low-temperature chemical vapor deposition process for depositing low- resistivity ruthenium metal layers (440, 460) that can be used as barrier/seed layers in Cu metallization schemes. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a ruthenium carbonyl precursor vapor and a CO-containing gas, and exposing the substrate (25, 125) to the process gas to deposit a low-resistivity ruthenium metal layer (440, 460) on the substrate (25, 125) by a thermal chemical vapor deposition process, where the substrate (25, 125) is maintained at a temperature between about 100°C and about 300°C during the exposing. A semiconductor device containing the ruthenium metal layer (440, 460) formed on a patterned substrate (402, 404, 406, 408) containing one or more vias or trenches (430), or combinations thereof, is provided.
摘要翻译：一种用于沉积可用作Cu金属化方案中的阻挡/种子层的低电阻钌金属层（440,460）的低温化学气相沉积工艺。方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供衬底（25,125），形成含有羰基钌前驱体蒸气和含CO气体的工艺气体，以及将所述衬底（25,125）暴露于所述工艺气体，以通过热化学气相沉积工艺在所述衬底（25,125）上沉积低电阻钌金属层（440,460），其中所述衬底（25,125 ）在曝光期间保持在约100℃和约300℃之间的温度。提供了包含形成在包含一个或多个通孔或沟槽（430）的图案化衬底（402,404,406,408）或其组合上的钌金属层（440,460）的半导体器件。

9. 发明申请

WO2007040596A1 METHOD FOR PURIFYING A METAL CARBONYL PRECURSOR 审中-公开
标题翻译：用于净化金属碳前驱体的方法
公开(公告)号：WO2007040596A1
公开(公告)日：2007-04-12
申请号：PCT/US2006/007675
申请日：2006-03-02
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji
发明人： SUZUKI, Kenji
IPC分类号： C23C16/44 , H01L21/32 , B01D47/02
CPC分类号： C23C16/4402 , C23C16/16
摘要： A method of purifying a metal carbonyl precursor (3a) in a metal precursor vaporization system (2) where the metal carbonyl precursor (3a) comprises a metal particulate impurity (3b). The method includes flowing a CO-containing gas through the metal precursor vaporization system (2) to a precursor collection system (7) in fluid communication with the metal precursor vaporization system (2) to separate the metal carbonyl precursor (3a) from the metal particulate impurity (3b) and to transfer the metal carbonyl precursor (3a) to the precursor collection system (7), and collecting the transferred metal carbonyl precursor (3a) in the precursor collection system (7), where an amount of the metal particulate impurity (3b) is lower in the precursor collection system (7) than in the precursor vaporization system (2) and the precursor collection system (7) is maintained at a lower temperature than the metal precursor vaporization system (2). A metal carbonyl precursor parameter may be monitored to determine a status of the metal carbonyl precursor (3a) and the need for purifying the metal carbonyl precursor (3a).
摘要翻译：在金属前体蒸发系统（2）中纯化羰基金属前体（3a）的方法，其中金属羰基前体（3a）包含金属颗粒杂质（3b）。该方法包括将含CO的气体通过金属前体蒸发系统（2）流动到与金属前体蒸发系统（2）流体连通的前体收集系统（7），以将金属羰基前体（3a）与金属颗粒杂质（3b），并将金属羰基前体（3a）转移到前体收集系统（7），并收集前体收集系统（7）中转移的金属羰基前体（3a），其中一定量的金属颗粒前体收集系统（7）中的杂质（3b）比前体蒸发系统（2）中的低，并且前体收集系统（7）保持在比金属前体蒸发系统（2）更低的温度。可以监测金属羰基前体参数以确定金属羰基前体（3a）的状态和对金属羰基前体（3a）的纯化的需要。

10. 发明申请

WO2007040701A2 METHOD FOR CONTROLLING THE STEP COVERAGE OF A RUTHENIUM LAYER ON A PATTERNED SUBSTRATE 审中-公开
标题翻译：用于控制图形基板上的R层的步长覆盖的方法
公开(公告)号：WO2007040701A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/026225
申请日：2006-07-06
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji
发明人： SUZUKI, Kenji
IPC分类号： C23C16/16 , C23C16/04
CPC分类号： C23C16/16 , C23C16/045 , H01L21/28556 , H01L21/76846
摘要： A method (300) for forming a Ru layer (560, 560', 561 , 580) for an integrated circuit by providing a patterned substrate (500, 504) in a process chamber (10, 110), and exposing the substrate (25, 125, 500, 504) to a process gas comprising a ruthenium carbonyl precursor and a CO gas to form a Ru layer (560, 560', 561 , 580) over a feature (530, 532, 533) of the patterned substrate (500, 504). In one embodiment, the CO partial pressure in the process chamber (10, 110) is varied during the exposing to control the step coverage of the Ru layer (560, 560', 561 , 580) over the feature (530, 532, 533). In an alternative or further embodiment, the step coverage can be controlled by varying the substrate temperature during the exposure.
摘要翻译：一种用于通过在处理室（10,110）中提供图案化衬底（500,504）形成用于集成电路的Ru层（560,560'，561,580）的方法（300），并且使衬底（25 125,500,504）提供给包含羰基钌羰基前体和CO气体的工艺气体，以在图案化衬底的特征（530,532,533）上形成Ru层（560,560'，561,580） 500，504）。在一个实施例中，处理室（10,110）中的CO分压在曝光期间变化，以控制在特征（530,532,533）上的Ru层（560,560'，561,580）的台阶覆盖）。在替代或进一步的实施例中，可以通过在曝光期间改变衬底温度来控制台阶覆盖。

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