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1. 发明申请

WO2007127657A2 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 审中-公开
标题翻译：在CVD反应器中增加多晶硅沉积
公开(公告)号：WO2007127657A2
公开(公告)日：2007-11-08
申请号：PCT/US2007066923
申请日：2007-04-19
申请人： GT SOLAR INC , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物。这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

2. 发明申请

WO2011116273A2 SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION 审中-公开
标题翻译：多晶硅沉积系统与方法
公开(公告)号：WO2011116273A2
公开(公告)日：2011-09-22
申请号：PCT/US2011028972
申请日：2011-03-18
申请人： GT SOLAR INC , QIN WENJUN
发明人： QIN WENJUN
IPC分类号： C01B33/035 , B01J19/26 , C23C16/24 , C30B29/06
CPC分类号： C23C16/45506 , C01B33/035 , C23C16/24 , C23C16/4418 , C23C16/45563 , C23C16/52
摘要： A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon. The chemical vapor deposition system can comprise a gas source comprising a gas with at least one precursor compound; a reaction chamber at least partially defined by a base plate and a bell jar; a first nozzle group disposed in one of the base plate and the bell jar, the first nozzle group fluidly connected to the gas source through a first manifold and a first flow regulator; a second nozzle group including a plurality of nozzles disposed in one of the base plate and the bell jar, the plurality of nozzles fluidly connected to the gas source through a second manifold and a second flow regulator.
摘要翻译：公开了一种从包含至少一种硅前体化合物的气体制造多晶硅的方法。该方法可以通过在化学气相沉积反应室中形成气体的第一流动模式，在化学气相沉积系统中由包括多晶硅前体化合物的气体进行，促进至少一部分前体的反应从具有第一流动模式的气体到多晶硅的化合物，在反应室中建立气体的第二流动模式，并促进至少一部分来自具有第二流动模式的气体的至少一部分前体化合物与第二流动模式的反应多晶硅。化学气相沉积系统可以包括气体源，其包含具有至少一种前体化合物的气体; 至少部分地由基板和钟罩限定的反应室; 设置在基板和钟罩之一中的第一喷嘴组，通过第一歧管和第一流量调节器流体连接到气体源的第一喷嘴组; 第二喷嘴组，包括设置在基板和钟罩之一中的多个喷嘴，多个喷嘴通过第二歧管和第二流量调节器流体地连接到气体源。

3. 发明申请

WO2011056959A2 SYSTEMS AND METHODS OF PRODUCING TRICHLOROSILANE 审中-公开
标题翻译：生产三氯硅烷的系统和方法
公开(公告)号：WO2011056959A2
公开(公告)日：2011-05-12
申请号：PCT/US2010055430
申请日：2010-11-04
申请人： GT SOLAR INC , FAHRENBRUCK SCOTT , HAZELTINE BRUCE
发明人： FAHRENBRUCK SCOTT , HAZELTINE BRUCE
IPC分类号： C01B33/107 , B01J12/00
CPC分类号： C01B33/1071 , Y02P20/132
摘要： The present invention is directed to systems and methods of synthesizing trichlorosilane. The disclosed systems and methods can involve increasing the concentration of the solids in the slurry to recover or separate the volatilized metal salts and reduce the obstructions created by the solidification of the metal salts in downstream operations during trichlorosilane synthesis. Rather than heating to raise the temperature to vaporize chlorosilane compounds, and subsequently condensing the volatilized chlorosilane compounds, the present invention can involve increasing the solids concentration in the slurry stream by utilizing a non-condensable gas, such as hydrogen, to volatilize the chlorosilane components, which can consequently promote evaporative conditions that can reduce the slurry temperature. The lower slurry temperature results in a lower volatility of the metal salts, which reduces the likelihood of carryover to downstream unit operations.
摘要翻译：本发明涉及合成三氯硅烷的方法和系统。所公开的系统和方法可以包括增加浆料中的固体的浓度以回收或分离挥发的金属盐，并减少在三氯硅烷合成期间在下游操作中金属盐固化产生的障碍物。而不是加热以提高温度以蒸发氯硅烷化合物，并随后使挥发的氯代硅烷化合物冷凝，本发明可以涉及通过利用不可冷凝气体如氢气来提高浆料流中的固体浓度，使氯代硅烷组分挥发，这因此可以促进可以降低浆料温度的蒸发条件。较低的浆料温度导致金属盐的较低挥发性，这降低了携带到下游单元操作的可能性。

4. 发明申请

WO2010008477A3 CHUCK AND BRIDGE CONNECTION POINTS FOR TUBE FILAMENTS IN A CHEMICAL VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：用于化学气相沉积反应器中的管状电缆的桥接和桥接连接点
公开(公告)号：WO2010008477A3
公开(公告)日：2010-06-03
申请号：PCT/US2009003763
申请日：2009-06-23
申请人： GT SOLAR INC , GUM JEFFREY C , BALLENGER KEITH , CHARTIER CARL , SCHWEYEN ANDY
发明人： GUM JEFFREY C , BALLENGER KEITH , CHARTIER CARL , SCHWEYEN ANDY
IPC分类号： C23C16/24 , C01B33/035 , C23C16/46
CPC分类号： C23C16/24 , C01B33/035 , C23C16/46 , Y10T29/49885
摘要： A chemical vapor deposition reactor system includes one or more tube filaments connected to a bridge, each tube filament being connected to a chuck. The chuck-to-filament connection can include a seed formed on an end of the tube filament, the seed being connected to a protrusion of the chuck, or the filament may be formed directly onto the chuck. For the bridge-to-filament connection, a flat cross bridge or a rectangular bridge is connected with corresponding openings in the filament. Use of these connections can maintain electrical connectivity and thus resistive heating of the tube filaments during operation of the reactor system.
摘要翻译：化学气相沉积反应器系统包括连接到桥的一个或多个管细丝，每个管细丝连接到卡盘。卡盘对丝线连接可以包括形成在管细丝的端部上的种子，种子连接到卡盘的突起，或者丝可以直接形成在卡盘上。对于桥到丝连接，扁平的交叉桥或矩形桥与灯丝中的相应开口连接。使用这些连接可以保持电连接性，从而在反应器系统的运行期间保持管丝的电阻加热。

5. 发明申请

WO2009120862A3 SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：在化学气相沉积反应器中分配气体的系统和方法
公开(公告)号：WO2009120862A3
公开(公告)日：2010-01-28
申请号：PCT/US2009038393
申请日：2009-03-26
申请人： GT SOLAR INC , QIN WENJUN
发明人： QIN WENJUN
IPC分类号： C23C16/24 , C23C16/455
CPC分类号： C23C16/24 , C01B33/035 , C23C16/45563 , C23C16/46 , C30B28/12
摘要： Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.
摘要翻译：提供了通过化学气相沉积在反应器中生产多晶硅或另一种材料的系统和方法，其中使用硅立管分配气体。硅立管可以使用喷嘴耦合器附接到反应器系统，使得前体气体可以被注入反应室的各个部分。结果，可以在整个反应器室中改善气体流动，这可以提高多晶硅的产量，提高多晶硅的质量，并减少能量的消耗。

6. 发明申请

WO2012006029A2 SYSTEM AND METHOD OF SEMICONDUCTOR MANUFACTURING WITH ENERGY RECOVERY 审中-公开
标题翻译：具有能量回收的半导体制造系统和方法
公开(公告)号：WO2012006029A2
公开(公告)日：2012-01-12
申请号：PCT/US2011042038
申请日：2011-06-27
申请人： GT SOLAR INC , GUM JEFFREY C , FERO CHAD
发明人： GUM JEFFREY C , FERO CHAD
IPC分类号： H01L21/205
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4411 , C23C16/4418 , C23C16/46 , F28D21/0001 , Y02P20/124 , Y02P20/129
摘要： The invention can provide or facilitate energy recovery operations during semiconductor processing operations by utilizing a bell jar having a radiation shield thereon that is comprised of a mediating layer comprising nickel disposed on an interior surface of the bell jar, and a reflective layer which can comprise a gold layer that is disposed on the mediating layer. The reflective layer has an emissivity of less than 5% and, more preferably, the reflective layer has an emissivity of less than about 1%. Heat from the reaction chamber can be used to reduce the heating load of one or more other unit operations.
摘要翻译：本发明可以通过利用其上具有辐射屏蔽的钟罩来提供或促进半导体加工操作期间的能量回收操作，该钟罩包括设置在钟罩的内表面上的包含镍的介质层，以及反射层，其可以包括设置在介质层上的金层。反射层的发射率小于5％，更优选地，反射层的发射率小于约1％。可以使用来自反应室的热量来减少一个或多个其它单元操作的加热负载。

7. 发明申请

WO2009120862A2 SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：在化学气相沉积反应器中分配气体的系统和方法
公开(公告)号：WO2009120862A2
公开(公告)日：2009-10-01
申请号：PCT/US2009/038393
申请日：2009-03-26
申请人： GT SOLAR, INC. , QIN, Wenjun
发明人： QIN, Wenjun
IPC分类号： C23C16/24 , C23C16/455
CPC分类号： C23C16/24 , C01B33/035 , C23C16/45563 , C23C16/46 , C30B28/12
摘要： Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.
摘要翻译：提供了通过化学气相沉积在反应器中生产多晶硅或另一种材料的系统和方法，其中使用硅立管分配气体。硅立管可以使用喷嘴耦合器附接到反应器系统，使得前体气体可以被注入反应室的各个部分。结果，可以在整个反应器室中改善气体流动，这可以提高多晶硅的产量，提高多晶硅的质量，并减少能量的消耗。

8. 发明申请

WO2009120859A1 GOLD-COATED POLYSILICON REACTOR SYSTEM AND METHOD 审中-公开
标题翻译：金涂层多晶硅反应器系统及方法
公开(公告)号：WO2009120859A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/038389
申请日：2009-03-26
申请人： GT SOLAR, INC. , GUM, Jeffrey, C. , FERO, Chad , DESROSIER, Dan
发明人： GUM, Jeffrey, C. , FERO, Chad , DESROSIER, Dan
IPC分类号： C01B33/00
CPC分类号： C30B25/08 , C01B33/035 , C23C16/4404
摘要： A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses.
摘要翻译：提供了一种反应室系统，以及用于该系统的相关装置和方法，其中通过在反应室内的一个或多个组件上提供薄的金层可以实现降低的功率消耗。反应室系统可用于化学气相沉积。金涂层应保持至少约0.1微米，更优选约0.5至3.0微米的厚度，以在反应室内提供合适的辐射率，从而减少热损失。

9. 发明申请

WO2009117545A1 SYSTEM AND METHOD FOR ARRANGING HEATING ELEMENT IN CRYSTAL GROWTH APPARATUS 审中-公开
标题翻译：在晶体生长装置中加热元件的系统和方法
公开(公告)号：WO2009117545A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/037605
申请日：2009-03-19
申请人： GT SOLAR, INC , KHATTAK, Chandra, P. , PARTHASARATHY, Santhana, Raghavan , SKELTON, Dean , DUANMU, Ning , CHARTIER, Carl
发明人： KHATTAK, Chandra, P. , PARTHASARATHY, Santhana, Raghavan , SKELTON, Dean , DUANMU, Ning , CHARTIER, Carl
IPC分类号： C30B35/00 , C30B11/00 , C30B28/06 , C30B29/06 , B22D27/04 , H01L31/042
CPC分类号： B22D27/045 , C30B11/003 , C30B28/06 , C30B29/06 , C30B35/00 , H01L31/04 , H01L31/182 , Y02P70/521 , Y10T29/49826
摘要： Systems and methods for arranging a heating element in a crystal growth apparatus include connecting elements such as heater clips used to interconnect one or more heating components of the heating element, and to connect at least one of the heating components with the crystal growth apparatus. The heating components can be electrically and thermally coupled, and can be connected via the same circuit, in order to simplify control of the heating element.
摘要翻译：用于在晶体生长装置中布置加热元件的系统和方法包括连接元件，例如用于互连加热元件的一个或多个加热部件的加热夹，并且将至少一个加热部件与晶体生长装置连接。加热部件可以电连接和热耦合，并且可以通过相同的电路连接，以便简化加热元件的控制。

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