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    • 4. 发明申请
    • PROCESS FOR FABRICATING A HETEROSTRUCTURE LIMITING THE FORMATION OF DEFECTS
    • 制定限制形成缺陷的结构的方法
    • WO2013080010A1
    • 2013-06-06
    • PCT/IB2012/002482
    • 2012-11-21
    • SOITECGAUDIN, Gweltaz
    • GAUDIN, Gweltaz
    • H01L21/762
    • H01L21/76251H01L21/02164H01L21/02238H01L21/02532H01L21/02592H01L21/02595H01L21/0262H01L21/02667H01L21/26513H01L21/30625H01L21/324H01L21/76254
    • The invention relates to a process for fabricating a heterostructure comprising at least one thin layer and a carrier substrate made of a semiconductor, the process comprising steps consisting in: - bonding a first substrate made of a single-crystal first material, said first substrate comprising a superficial layer made of a polycrystalline second material, to a second substrate so that a bonding interface is created between the polycrystalline layer and the second substrate;. - removing from the free surface of one of the substrates, called the donor substrate, a thickness thereof so that only a thin layer is preserved; - generating a layer of amorphous semiconductor material between the first substrate and the bonding interface by amorphization of the layer of polycrystalline material; and - crystallizing the layer of amorphous semiconductor material, the newly crystallized layer having the same orientation as the adjacent first substrate.
    • 本发明涉及一种用于制造异质结构的方法,该方法包括由半导体制成的至少一个薄层和载体衬底,所述方法包括以下步骤: - 将由单晶第一材料制成的第一衬底接合,所述第一衬底包括 由多晶第二材料制成的表层,到第二基板,从而在多晶层和第二基板之间形成接合界面。 - 从称为供体基板的一个基板的自由表面去除其厚度,使得仅保留薄层; - 通过所述多晶材料层的非晶化在所述第一基板和所述接合界面之间产生非晶半导体材料层; 以及 - 结晶所述非晶半导体材料层,所述新结晶层具有与相邻的第一衬底相同的取向。